• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.7
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• pp.532-541
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• 2003

In a memory, most power is dissipated in high capacitive lines such as predecoder lines, word lines, and bit lines. To reduce the power dissipation in these high capacitive lines, this paper proposes three techniques using charge recycling and charge sharing. One is the charge recycling predecoder (CRPD). The second one is the charge recycling word line decoder (CRWD). The last one is the charge sharing bit line (CSBL) for a ROM. The CRPD and the CRWD recycle the previously used charge in predecoder lines and word lines. Theoretically, the power consumption in predecoder lines and word lines are reduced to a half. The CSBL reduces the swing voltage in the ROM bit lines to very small voltage using a charge sharing technique. the CSBL can significantly reduce the power dissipation in ROM bit lines. The CRPD, the CRWD, and the CSBL consume 82%, 72%, and 64% of the power of previous ROM designs respectively. A charge recycling and charge sharing ROM (CRCS-ROM) with the CRPD, the CRWD, and the CSBL is implemented. A CRCS-ROM with 8K16bits was fabricated in a 0.3${\mu}{\textrm}{m}$ CMOS process. The CRCS-ROM consumes 8.63㎽ at 100MHz with 3.3V. The chip core area is 0.1 $\textrm{mm}^2$.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.5
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• pp.99-105
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• 2004

A shared-capacitor charge-sharing ROM (SCCS-ROM) using dummy bit lines is proposed. The SCCS-ROM reduces the bit line swing voltage using the charge-sharing technique of the conventional charge-sharing ROM (CS-ROM). Although the CS-ROM needs three small capacitors per output bit, the proposed SCCS-ROM shares the capacitors so that it needs only three capacitors. The SCCS-ROM implements the capacitors using dummy bit lines. This not only increases noise immunity but also reduces power. A SCCS-ROM with 8K${\times}$15bits implemented in a 0.35${\mu}{\textrm}{m}$ CMOS process. The SCCS-ROM consumes 8.63㎽ at 100MHz with 3.3V The simulation results show that the SCCS-ROM reduces 8.4% power compared to the CS-ROM.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.5
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• pp.549-556
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• 2014

This paper proposes a highly power-efficient single-inductor multiple-outputs (SIMO) DC-DC converter with a gate charge sharing method in which gate charges of output switches are shared to improve the power efficiency and to reduce the switching power loss. The proposed converter was fabricated by using a $0.18{\mu}m$ CMOS process technology with high voltage devices of 5 V. The input voltage range of the converter is from 2.8 V to 4.2 V, which is based on a single cell lithium-ion battery, and the output voltages are 1.0 V, 1.2 V, 1.8 V, 2.5 V, and 3.3 V. Using the proposed gate charge sharing method, the maximum power efficiency is measured to be 87.2% at the total output current of 450 mA. The measured power efficiency improved by 2.1% compared with that of the SIMO DC-DC converter without the proposed gate charge sharing method.

• Journal of the Semiconductor & Display Technology
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• v.22 no.4
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• pp.161-165
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• 2023

This paper designed a voltage feedback driving circuit to compensate for the characteristic deviation of the Active Matrix Organic Light Emitting Diode driving Thin Film Transistor. This paper describes a stable and fast circuit by applying charge sharing and polar stabilization methods. A 12-inch Organic Light Emitting Diode with a Double Wide Ultra eXtended Graphics Array resolution creates a screen distortion problem for line parasitism, and charge sharing and polar stabilization structures were applied to solve the problem. By applying Charge Sharing, all data lines are shorted at the same time and quickly positioned as the average voltage to advance the compensated change time of the gate voltage in the next operation period. A buffer circuit and a current pass circuit were added to lower the Amplifier resistance connected to the line as a polar stabilization method. The advantage of suppressing the Ringing of the driving Thin Film Transistor can be obtained by increasing the stability. As a result, a circuit was designed to supply a stable current to the Organic Light Emitting Diode even if the characteristic deviation of the driving Thin Film Transistor occurs.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.1
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• pp.76-83
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• 2007

This paper describes a low power ROM using single charge-sharing capacitor and hierarchical bit line (SCSC-ROM). The SCSC-ROM reduces the power consumption in bit lines. It lowers the swing voltage of bit lines to a very small voltage by using a charge-sharing technique with a single capacitor. It implements the capacitor with dummy bit lines to improve noise immunity and make easy to design. The hierarchical bit line further saves the power by reducing the capacitance in bit lines. The SCSC-ROM also reduces the power consumption in control unit and predecoder by using the hierarchical word line decoder. The simulation result shows that the SCSC-ROM with $4K{\times}32bits$consumes only 37% power of a conventional ROM. A SCSC-ROM chip is fabricated in a $0.25{\mu}m$ CMOS process. It consumes 8.2mW at 240MHz with 2.5V.

• Journal of Sensor Science and Technology
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• v.14 no.1
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• pp.28-32
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• 2005

In this paper, a CMOS integrated detection circuit for capacitive type fingerprint sensor signal processing is described. We designed a detection circuit of charge-sharing sensing scheme. The proposed detection circuit increases the voltage difference between a ridge and valley. The test chip is composed of $160{\times}192$ array sensing cells (12 by $12.7{\;}mm^{2}$). The chip was fabricated on a 0.35 m standard CMOS process. Measured difference voltage between a ridge and valley was 0.95 V.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.8
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• pp.34-45
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• 1994

We studied threshold voltages and I-V characteristics. considering short channel effect of the fully depleted thin film n-channel SOI MOSFET. We presented a charge sharing model when the back surface of short channel shows accumulation depletion and inversion state respectively. A degree of charge sharing can be compared according to each of back-surface conditions. Mobility is not assumed as constant and besides bulk mobility both the mobility defined by acoustic phonon scattering and the mobility by surface roughness scattering are taken into consideration. I-V characteristics is then implemented by the mobility including vertical and parallel electric field. kThe validity of the model is proved with the 2-dimensional device simulation (MEDICI) and experimental results. The threshold voltage and charge sharing region controlled by source or drain reduced with increasing back gate voltage. The mobility is dependent upon scattering effect and electric field. so it has a strong influence on I-V characteristics.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.3
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• pp.331-338
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• 2014

A charge-pump circuit using a current-bypass technique, which suppresses charge sharing and reduces the sub-threshold currents, helps to decrease phase-locked loop (PLL) jitter without resorting to a feedback amplifier. The PLL shows no stability issues and no power-up problems, which may occur when a feedback amplifier is used. The PLL is implemented in 0.11-${\mu}m$ CMOS technology to achieve 0.856-ps RMS and 8.75-ps peak-to-peak jitter, which is almost independent of ambient temperature while consuming 4 mW from a 1.2-V supply.

• Journal of information and communication convergence engineering
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• v.6 no.1
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• pp.43-46
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• 2008

This paper proposes an advanced test circuit for detecting the connectivity between a drum ring of laser printer and PCB. The detection circuit of charge sharing is proposed, which minimizes the influences of internal parasitic capacitances. The test circuit is composed of precharge circuit, analog comparator, level shifter. Its functional operation is verified using $0.6{\mu}m$ 3.3V/40V CMOS process parameter by HSPICE. Access time is100ns. Layout of the drum contact test circuit is $465{\mu}m\;{\times}\;117{\mu}m$.

• The Transactions of the Korean Institute of Electrical Engineers B
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• v.49 no.4
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• pp.282-290
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• 2000

In this paper, the charge control with the input voltage feedback is proposed for the input series-output series-output parallel connected converter configuration for the high speed train power system application. This control scheme accomplishes the output current sharing for the output-parallel connected modules as well as the input voltage sharing for the input series connected modules for all operating conditions including the transients. It also offers the robustness for the input voltage sharing control according to the component value mismatches among the modules. And this configuration enables the usage of MOSFET for a high voltage system allowing a higher switching frequency for lighter system weight and smaller size. The performance of the proposed scheme is verified through the experimental results.