• Journal of the Institute of Electronics and Information Engineers
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• v.54 no.3
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• pp.97-107
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• 2017

In the field of automatic door, the infrared rays and microwave sensor are much used as the important components in charge of the motor's operation control of open and close through the incoming signal of object recognition. In case of existing system that the sensor of the infrared rays and microwave are applied to the automatic door, there are many malfunctions by the infrared rays and visible rays of the sun. Because the automatic doors are usually installed outside of building in state of exposure. The environmental change by temperature difference occurs the noise of object recognition detection signal. With this problem, the hardware fault that the detection sensor is unable to follow the object moving rapidly within detection area makes the sensing blind spot. This fault should be improved as soon as possible. Because It influences safety of passengers who use the automatic doors. This paper conducted an experiment to improve the detection area by installing extra ultrasonic sensor besides existing detection sensor. So, this paper realize the computing circuit and detection algorithm which can correctly and rapidly process the access route of objects moving fast and the location area of fixed obstacles by applying detection and advantages of ultrasonic signal to the automatic doors. With this, It is proved that the automatic door applying ultrasonic sensor is improved detection area of blind spot sensing through field test and improvement plan is proposed.

• Journal of the Institute of Electronics and Information Engineers
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• v.51 no.7
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• pp.230-238
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• 2014

In this paper, we propose the possible way of accurate analysis and examination of ITO sensor to discriminate whether mutual capacitance ITO sensor is defective by using mutual capacitance of data in each node which consists of electrodes inside of ITO sensor. We have analyzed the structure characteristic of mutual capacitance ITO sensor which is used as an input device for not only small size electronics like mobile phone and tablets but also big size electronics and designed the circuit to inspect ITO sensor using touch screen panel IC. Set a variable related with mutual capacitance of charge and discharge and Implement to find and analyze accurate position when defect is made through the data from each node of ITO sensor. First, we can set a yield effective range through the first experiment data of mutual capacitance ITO sensor and by using the data of each node of ITO sensor which is the result from the second experiment, we can verify accuracy and effectiveness of effective range from the first experiment as a sample which is used in this experiment.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.33-33
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• 2009

Silicon nano-structures have great potential in bionic sensor applications. Atomic force microscopy (AFM) anodic oxidation have many advantages for the nanostructure fabrication, such as simple process in atmosphere at room temperature, compatibility with conventional Si process. In this work, we fabricated simple FET structures with channel width W~ 10nm (nanowire) and $1{\mu}m$ (nano-ribbon) on ~10, 20 and 100nm-thinned silicon-on-insulator (SOI) wafers in order to investigate the surface effect on the transport characteristics of nano-channel. For further quantitative analysis, we carried out the 2D numerical simulations to investigate the effect of channel surface states on the carrier distribution behavior inside the channel. The simulated 2D cross-sectional structures of fabricated devices had channel heights of H ~ 10, 20, and 100nm, widths of L ~ $1{\mu}m$ and 10nm respectively, where we simultaneously varied the channel surface charge density from $1{\times}10^{-9}$ to $1{\times}10^{-7}C/cm2$. It has been shown that the side-wall charge of nanowire channel mainly affect the I-V characteristics and this was confirmed by the 2D numerical simulations.

• Journal of Sensor Science and Technology
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• v.23 no.5
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• pp.326-331
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• 2014

In this study, a MEMS microphone that uses $Si_3N_4$ as the vibration membrane was produced for application as an auditory device using a sound visualization technique (sound visualization) for the hearing impaired. Two sheets of 6-inch silicon wafer were each fabricated into a vibration membrane and back plate, after which, wafer bonding was performed. A certain amount of charge was created between the bonded vibration membrane and the back plate electrodes, and a MEMS microphone that functioned through the capacitive method that uses change in such charge was fabricated. In order to evaluate the characteristics of the prepared MEMS microphone, the frequency flatness, frequency response, properties of phase between samples, and directivity according to the direction of sound source were analyzed. The MEMS microphone showed excellent flatness per frequency in the audio frequency (100 Hz-10 kHz) and a high response of at least -42 dB (sound pressure level). Further, a stable differential phase between the samples of within -3 dB was observed between 100 Hz-6 kHz. In particular, excellent omnidirectional properties were demonstrated in the frequency range of 125 Hz-4 kHz.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.27 no.11
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• pp.1630-1636
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• 2003

Automobile companies and research institutions in leading automobile-manufacturing nations have recently been very active with research regarding the HCCI engine for use in future vehicles. Because HCCI engines take advantage of high compression ratio and heat release rate, they exhibit high efficiency found in compression ignition engines. HCCI engines also utilize a lean air/fuel ratio resulting in low emissions of NO$_{x}$ and PM (particulate matter). The objective of this research is to determine the effects of EGR rate on the combustion processes of HCCI. for this purpose, a 4-cylinder, compression ignition engine was converted into a HCCI engine, and a heating device was installed to raise the temperature of the intake air and also to make it more consistent. In addition, a pressure sensor was inserted into each of the cylinders to investigate the differences in characteristics among the cylinders. The experimental study of the effects of EGR rate on various gas emissions, engine performance, etc. should prove to be a valuable source of information for the development of the HCCI engine.e.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.8-8
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• 2010

외부전하를 감지할 수 있는 EEPROM 구조를 기반으로 한 센서를 제안하였다. 부유게이트로부터 확장된 큰 면적의 접촉부위 (CCM)는 외부전하를 고정화하도록 설계되었으며, $0.13{\mu}m$ 단일-다결정 CMOS 공정에 적합한 적층의 금속-절연체-금속 (MIM) 제어케이트구조로 구성되었다. N-채널 EEPROM의 CCW 캐패시터 영역에 양의 전압이 인가되면 제어 게이트의 문턱전압이 음의 방향으로 변화하여 드레인 전류는 증가하는 특성을 보였다. 또한 이미 충전된 외부 캐패시터가 CCW의 부유게이트의 금속영역에 직접 연결되면, 외부 캐패시터로부터 유입된 양의 전하는 n-채널 EEPROM의 드레인 전류를 증가시키지만 반면에 음의 전하는 이를 감소시켰다. 외부 전압과 전하에 의해 PMOS의 특성은 NMOS에 비교하여 반대로 나타남이 확인되었다. EEPROM 인버터의 CCW 영역에 외부전하를 연결하면 인버터의 입-출력 특성이 기준 시료에 비해 외부전하의 극성에 따라 변화하였다. 그러므로, EEPROM 인버터는 외부전하를 감지하여 부유게이트에 고정된 전하의 밀도 크기에 따라 출력을 전압으로 표현할 수 있음을 확인하였다.

• Journal of Sensor Science and Technology
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• v.25 no.3
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• pp.229-234
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• 2016

Self-powered neutron detector (SPND) is being widely used to monitor the reactor core of the nuclear power plants. The SPND contains a neutron-sensitive metallic emitter surrounded by a ceramic insulator. Currently, the vanadium (V) SPND has been being developed to be used in OPR1000 nuclear power plants. Some Monte Carlo simulations were accomplished to calculate the initial sensitivity of vanadium emitter material and alumina insulator with a cylindrical geometry. An MCNP code was used to simulate some factors (neutron self-shielding factor and beta escape probability from the emitter) and space charge effect of an insulator necessary to calculate the sensitivity of vanadium detector. The simulation results were compared with some theoretical and experimental values. The method presented here can be used to analyze the optimum design of the vanadium SPND and contribute to the development of TMI (Top-mount In-core Instrumentation) which might be used in the SMART and SMR.

• Journal of Sensor Science and Technology
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• v.19 no.2
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• pp.160-167
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• 2010

In this paper, we fabricated the optoelectronic device based on Cadmium selenide(CdSe) nanocrystal quantum dots (NQDs)/single-walled carbon nanotubes(SWNTs) heterostructure using dieletrophoretic force. The efficient charge transfer phenomena from CdSe to SWNT make CdSe-Pyridine(py)-SWNT unique heterostructures for novel optoelectronic device. The conductivity of CdSe-py-SWNT was increased when it was exposed at ultra violet(UV) lamp, and varied as a function of wavelength of incident light.

• Journal of Sensor Science and Technology
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• v.7 no.2
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• pp.140-146
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• 1998

Methods and systems to remove static electricity are requested necessarily because the static electricity causes a flammable gas explosion, a fire, reduction of production rate in manufacturing VLSI semiconductor device and so on. In this paper, abrasion and dust contaminant of needle electrode are studied experimentally. And, frequencies and pulse durations of a high frequency pulse source were controlled effectively to minimize the abrasion of needle electrode and control generated numbers of ions. As a result, it is verified experimentally that the ion generation of charge neutralizer increases by using a high frequency pulse source.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.375-378
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• 2002

There has recently been a great deal of interest in amorphous selenium for application of digital x-ray image sensor. The initial number of the electron-hole induced by interaction a-Se with x-ray photons and the collection efficiency to surface of generated charges are important parameters for x-ray sensitivity of the a-Se. Therefore, in this paper, we analyzed that thickness of a-Se film and electric field is affected on the initial number of electron-hole and the collection efficiency. The experimental value of x-ray induced charge about the various thickness and the electric field is compared with estimated absorbed energy through MCNP 4C code to analyze the mechanism x-ray induced signal of a-Se. The experimental results showed that the electric field depends on initial escape coefficient and the thickness depends on collection coefficient than escape efficient.