• 한국중재학회지:중재연구
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• 제14권2호
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• pp.281-300
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• 2004

This paper is about a case on the arbitration of disputes between the parties of charter party. 'B' vessel owner on the original charter party first made a charter party with 'L' cargo owner on the original charter party. Then, 'B' entered into another charter party with 'D' vessel owner, who will actually take charge of carriage of the cargoes which is described on the original charter party. Therefore, 'B' is a carrier of cargoes of 'L' and 'D' is a carrier of cargoes of 'B', according to the contracts. The cargoes of 'B' is cargoes of 'L', by nature. In these circumstances, damages to the cargoes occurred in the transit by the vessel of 'D'. Who should take the responsibility for the damage of cargoes? Who must be liable for those, 'B' or 'D'？. According to the original charter party, 'L' signed 'as Charterers' and 'B' was the counterpart of 'L'. But 'B' signed as 'for and on behalf of 'B',' without 'as Owners'. Tribunal of arbitration award that 'B' should take the responsibility for the damage to the cargoes, because 'B' is the vessel owner. Although 'B' is a contract carrier, 'B' must bear the liability of transport of the cargoes. The counterpart of charterer, 'L' is 'B' who is presumed to be the vessel owner by the original charter party. 'D', actual carrier is not the privy of 'L', cargo owner. This case teach us that signature on the contract is the matter of great importance.

• Current Photovoltaic Research
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• 제6권2호
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• pp.43-48
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• 2018

The traditional silicon heterojunction solar cells consist of intrinsic amorphous silicon to prevent recombination of the silicon surface and doped amorphous silicon to transport the photo-generated electrons and holes to the electrode. Back contact solar cells with silicon heterojunction exhibit very high open-circuit voltages, but the complexity of the process due to form the emitter and base at the backside must be addressed. In order to solve this problem, the structure, manufacturing method, and new materials enabling the carrier selective contact (CSC) solar cell capable of achieving high efficiency without using a complicated structure have recently been actively developed. CSC solar cells minimize carrier recombination on metal contacts and effectively transfer charge. The CSC structure allows very low levels of recombination current (eg, Jo < 9fA/cm2), thereby achieves high open-circuit voltage and high efficiency. This paper summarizes the core technology of CSC solar cell, which has been spotlighted as the next generation technology, and is aiming to speed up the research and development in this field.

• 한국전기전자재료학회논문지
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• 제22권9호
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• pp.732-736
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• 2009

Protons are irradiated into SOl wafers under total dose of 100 krad, 500 krad, 1 Mrad and 2 Mrad to analyze the irradiation effect. The electrical properties are analyzed by pseudo MOSFET technology after proton irradiation. The wafers are annealed to stabilize generated defects in a nitrogen atmosphere at $300^{\circ}C$ for 1 hour because proton irradiation induces a lot of unstable defects in the surface silicon film. Both negative and positive turn-on voltages are shifted to negative direction after the irradiation. The more proton total dose, the more turn on voltage shifts. It means that positive oxide trap charge is generated in the buried oxide(BOX). The minority carrier lifetime which is analyzed by the drain current transient characteristics decreases with the increase of proton total dose. The proton irradiation makes crystal defects in the silicon film, and consequently, the crystal defects reduce the carrier lifetime and mobility. As these results, it can be concluded that pseudo MOSFET is a useful technology for the analysis of irradiated SOI wafer.

• 대한전자공학회논문지SD
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• 제43권3호
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• pp.1-8
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• 2006

본 논문에서는 채널 stress에 따른 Nano-scale CMOSFET의 소자 및 신뢰성 (HCI, NBTI)특성을 분석하였다. 잘 알려져 있듯이 NMOS는 tensile, PMOS는 compressive stress가 인가된 경우에 소자의 특성이 개선되었으며, 이는 전자와 정공의 이동도 증가에 의한 것임을 확인하였다. 그러나 신뢰성인 경우에는 소자 특성과는 다른 특성을 나타냈는데, NMOS와 PMOS 모두 tensile stress가 인가된 경우에 hot carrier 특성이 더 열화 되었으며, PMOS의 PBTI 특성도 tensile에서 더 열화 되었음을 확인하였다. 신뢰성을 분석한 결과, 채널의 tensile stress로 인하여 $Si/SiO_2$ 계면에서 interface trap charge의 생성과 산화막 내 positive fixed charge의 생성에 많은 영향을 끼침을 알 수 있었다. 그러므로 나노급 CMOSFET에 적용되는 strained-silicon MOSFET의 개발을 위해서는 소자의 성능 뿐 만 아니라 신뢰성 또한 고려되어야 한다.

• 한국정보전자통신기술학회논문지
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• 제16권4호
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• pp.180-186
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• 2023

본 논문은 4세대 VNAND 공정으로 만들어진 고전압 SiO2 절연층 nMOSFET의 n⁺ 및 p⁺ poly-Si 게이트에서의 positive bias temperature instability(PBTI) 열화에 대해 비교하고 각각의 메커니즘에 대해 분석한다. 게이트 전극 물질의 차이로 인한 절연층의 전계 차이 때문에 n⁺/nMOSFET의 열화가 p⁺/nMOSFET의 열화보다 더 클 것이라는 예상과 다르게 오히려 p⁺/nMOSFET의 열화가 더 크게 측정되었다. 원인을 분석하기 위해 각각의 경우에 대해 interface state와 oxide charge를 각각 추출하였고, 캐리어 분리 기법으로 전하의 주입과 포획 메커니즘을 분석하였다. 그 결과, p⁺ poly-Si 게이트에 의한 정공 주입 및 포획이 p⁺/nMOSFET의 열화를 가속시킴을 확인하였다.

• 한국방사선학회논문지
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• 제4권4호
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• pp.37-40
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• 2010

본 연구에서는 X선 조사에 의해 생성된 전하의 이동현상을 조사하기 위해 비행시간 측정방법을 이용하였다. 이 측정기술은 일반적으로 디지털 X선 영상 변환물질의 전하 트랩 및 수송현상에 유용한 방법이다. 비행시간 측정법을 이용하여 a-Se 광도전체의 전하 수송자의 과도시간 및 이동속도를 측정하였다. 시편제작을 위해 열증착법을 이용하여 유리기판위에 $400{\mu}m$ 두께의 a-Se 필름을 제작하였다. 측정결과, 전자와 정공의 과도시간은 $10V/{\mu}m$의 전기장에서 각각 $229.17{\mu}s$ 와 $8.73{\mu}s$ 였으며, 이동속도는 각각 $0.00174cm^2/V{\cdot}s$, $0.04584cm^2/V{\cdot}s$ 였다. 측정결과, 전자와 정공의 이동 속도의 측정값에 다소 큰 차이를 보였으며, 이 결과로부터 전하수송 및 트랩 기전을 분석하는데 이용하였다.

• Strategy21
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• 통권41호
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• pp.30-51
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• 2017

Neighboring powers in the Korean Peninsula have started to develop and operate aircraft carriers or equivalent forces to cope with rising North Korean nuclear and missile threats and also to show its national might. For example, the United States has added a aircraft carrier from the 3rd fleet to western pacific theater of operation, while Peoples Republic of China is undergoing operational test of Liaoning as well as preparing for christening of its 2nd aircraft carrier. Japan is flexing its muscle as well by deploying Izumo capable of operating F-35B to Southeast Asia to participate in multilateral exercises starting this year. It is a high time to know more about aircraft carriers or similar types in terms of maritime strategy and history. The U.S. has had by far the vast amount of experiences in utilizing aircraft carrier that it would be beneficial for us to examine U.S. perspectives and its application in the Korean Peninsula. It will provide us with insights to understand and predict what it would be like in times of crisis in the Korean Peninsula in the perspective of aircraft carrier's involvement. This paper intends to show some aspects of future conflicts in the Korean Peninsula and how the ROK Navy can best be ready for such situation. For research purpose, U.S. maritime strategy has been developed in stages ; establishment phase, WWI phase, WWII phase, Cold war phase, post Cold war phase. Each phase includes such factors as threats, strategic concept, applications, and ways to improve maritime strategy. Finally, the role of aircraft carrier based on past history as well as future conflict shines the importance to have power projection capabilities for the ROK Navy. The intrinsic nature of the navy in the world is to project power ashore just as history proved it.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.254-255
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• 2012

Interest in nano-crystalline silicon (nc-Si) thin films has been growing because of their favorable processing conditions for certain electronic devices. In particular, there has been an increase in the use of nc-Si thin films in photovoltaics for large solar cell panels and in thin film transistors for large flat panel displays. One of the most important material properties for these device applications is the macroscopic charge-carrier mobility. Hydrogenated amorphous silicon (a-Si:H) or nc-Si is a basic material in thin film transistors (TFTs). However, a-Si:H based devices have low carrier mobility and bias instability due to their metastable properties. The large number of trap sites and incomplete hydrogen passivation of a-Si:H film produce limited carrier transport. The basic electrical properties, including the carrier mobility and stability, of nc-Si TFTs might be superior to those of a-Si:H thin film. However, typical nc-Si thin films tend to have mobilities similar to a-Si films, although changes in the processing conditions can enhance the mobility. In polycrystalline silicon (poly-Si) thin films, the performance of the devices is strongly influenced by the boundaries between neighboring crystalline grains. These grain boundaries limit the conductance of macroscopic regions comprised of multiple grains. In much of the work on poly-Si thin films, it was shown that the performance of TFTs was largely determined by the number and location of the grain boundaries within the channel. Hence, efforts were made to reduce the total number of grain boundaries by increasing the average grain size. However, even a small number of grain boundaries can significantly reduce the macroscopic charge carrier mobility. The nano-crystalline or polymorphous-Si development for TFT and solar cells have been employed to compensate for disadvantage inherent to a-Si and micro-crystalline silicon (${\mu}$-Si). Recently, a novel process for deposition of nano-crystralline silicon (nc-Si) thin films at room temperature was developed using neutral beam assisted chemical vapor deposition (NBaCVD) with a neutral particle beam (NPB) source, which controls the energy of incident neutral particles in the range of 1~300 eV in order to enhance the atomic activation and crystalline of thin films at room temperature. In previous our experiments, we verified favorable properties of nc-Si thin films for certain electronic devices. During the formation of the nc-Si thin films by the NBaCVD with various process conditions, NPB energy directly controlled by the reflector bias and effectively increased crystal fraction (~80%) by uniformly distributed nc grains with 3~10 nm size. The more resent work on nc-Si thin film transistors (TFT) was done. We identified the performance of nc-Si TFT active channeal layers. The dependence of the performance of nc-Si TFT on the primary process parameters is explored. Raman, FT-IR and transmission electron microscope (TEM) were used to study the microstructures and the crystalline volume fraction of nc-Si films. The electric properties were investigated on Cr/SiO2/nc-Si metal-oxide-semiconductor (MOS) capacitors.

• 한국산학기술학회논문지
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• 제20권11호
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• pp.494-500
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• 2019

본 연구는 탄약운반장갑차의 장약이송 소프트웨어 최적 설계를 통해 장약이송 시 파손을 방지하는 것을 목표로 하고 있다. 탄약운반장갑차는 자동화된 장약이송시스템이 적용되어 있다. 군 운용 중 장약 적재 시 간헐적으로 장약이 파손되는 현상이 발생하여 다음과 같은 개선방법을 연구하였고, 입증시험을 실시하였다. 장약 이송기의 속도가 높을 경우 충격력이 증가하기 때문에 적재 속도를 기존보다 60% 감소 시켰고, 포스 게이지를 활용하여 충격력을 측정하였다. 충격력 측정 결과 평균 45% 감소하는 것을 확인 할 수 있었다. 적재관 내부의 간섭 등에 의한 이송기의 부하 발생 시 서보제어기의 최대전류 11A를 출력하면 장약이 파손 될 가능성이 있다. 또한, 최대전류가 낮을 경우 장약적재가 불가하기 때문에 적정 값을 찾아야 했고, 이는 시험을 통하여 최적의 최대전류 값 6.5A를 도출하였다. 최적설계 입증 시험에는 종이지관장약과 실제장약을 적용하여 시험 하였다. 종이지관 장약과 실제 장약으로 탄운차에 장약 적재시험을 실시한 결과 장약의 파손이 발생하지 않았으며, 장약 적재가 정상적으로 이루어져 설계 개선이 타당한 것을 입증하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.230.1-230.1
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• 2016

본 연구에서는 Host-Dopant system 기반 적색 인광 OLED의 Emitting layer(EML)에서 doping 위치에 따른 특성 변화를 분석하였다. EML은 host 물질로 60 nm 두께의 CBP를 사용하고, 적색 발광을 위해 10 %의 $Ir(btp)_2$를 CBP의 Front, Middle, Back side에 각각 20 nm씩 doping하였다. 본 구조의 적색 인광 OLED는 current density, luminance, efficiency, EL spectrum 등을 통해 전기적, 광학적 특성 변화를 확인하였다. Front, Back side에 doping으로 인한 CBP의 Energy level이 3.6 eV에서 1.9 eV로 감소하여 각각 HTL/EML, EML/HBL의 경계에 carrier direct injection이 활성화 되었고, 이로 인한 charge balance의 저하를 확인하였다. EL spectrum결과 각 소자는 CBP의 618 nm 파장 외에도, 추가적으로 TPBi의 398 nm, NPB의 456 nm의 파장을 보였다. 이를 통해 doping 위치에 따라 exciton이 형성되는 recombination zone이 이동하고 있음을 확인하였고, Front side는 6 V의 인가전압에서는 발광 파장이 398 nm에서 높은 값을 보이나 8 V, 10 V, 12 V에서 618 nm에서 높은 값을 보이는 것으로 인가전압에 의해 recombination zone이 HTL쪽으로 이동되는 것 또한 확인하였다.