• Industrial Engineering and Management Systems
• /
• v.11 no.2
• /
• pp.183-187
• /
• 2012

In this paper, we study the fixed charge transportation problem with uncertain variables. The fixed charge transportation problem has two kinds of costs: direct cost and fixed charge. The direct cost is the cost associated with each source-destination pair, and the fixed charge occurs when the transportation activity takes place in the corresponding source-destination pair. The uncertain fixed charge transportation problem is modeled on the basis of uncertainty theory. According to inverse uncertainty distribution, the model can be transformed into a deterministic form. Finally, in order to solve the uncertain fixed charge transportation problem, a numerical example is given to show the application of the model and algorithm.

• Applied Microscopy
• /
• v.45 no.4
• /
• pp.214-217
• /
• 2015

This study introduces metal coating as an effective sample preparation method to remove charge-up caused by the shadow effect during field emission scanning electron microscope (FE-SEM) analysis of dynamic structured samples. During a FE-SEM analysis, charge-up occurs when the primary electrons (input electrons) that scan the specimens are not equal to the output electrons (secondary electrons, backscattered electrons, auger electrons, etc.) generated from the specimens. To remove charge-up, a metal layer of Pt, Au or Pd is applied on the surface of the sample. However, in some cases, charge-up still occurs due to the shadow effect. This study developed a coating method that effectively removes charge-up. By creating a converted sample stage capable of simultaneous tilt and rotation, the shadow effect was successfully removed, and image data without charge-up were obtained.

• Proceedings of the KIEE Conference
• /
• 2008.04c
• /
• pp.199-201
• /
• 2008

This paper persents charge/discharge system for small PV using micro-processor. Charge/discharge system designs a Buck converter and using constant voltage charge system because regular voltage is rather high a condenser. Besides, we did compensate for charge voltage of condenser through a temperature compensation circuit. We consists of a 170W stand-alone PV system to observe charge/discharge system character. In the result of search about output character we know that charge and discharge are smoothly running.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
• /
• v.12 no.5
• /
• pp.486-493
• /
• 2000

A theoretical model for the transient performance of vapor-compression air-conditioning system has been developed to evaluate the influence of the refrigerant charge on the system performance. A set of mass and energy equations for the simulation of the heat exchangers and the capillary tube and a polytropic compression model for the compressor are used. The present model successfully predicts the transient behavior of the vapor-compression air-conditioner from the startup. As the refrigerant charge is increased, both the evaporating and condensing pressures increase gradually, and the cooling rate and the COP show a maximum in the range of 0.75-0.8 kg of refrigerant charge. This amount of refrigerant mass is determined to be the optimum charge of the model system. Also, the effect of outdoor air temperature on the optimum refrigerant charge is discussed.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.12 no.3
• /
• pp.353-359
• /
• 2012

A highly efficient charge pump that minimizes the reverse charge sharing current (in short, reverse current) is proposed. The charge pump employs auxiliary capacitors and diode-connected MOSFET along with an early clock to drive the charge transfer switches; this new method provides better isolation between stages. As a result, the amount of reverse current is reduced greatly and the clock driver can be designed with reduced transition slope. As a proof of the concept, a 1.1V-to-9.8 V charge pump was designed in a $0.35{\mu}m$ 18 V CMOS technology. The proposed architecture shows 1.6 V ~ 3.5 V higher output voltage compared with the previously reported architecture.

• Proceedings of the KIEE Conference
• /
• 2008.09a
• /
• pp.235-236
• /
• 2008

Charging of spacecraft occurs in plasma and radiation environment. Especially, we focused on an accident caused by internal charging in a glass material that was used as the cover plate of solar panel array, and tried to measure the charge distribution in glass materials under electron beam irradiation by using a PEA (Pulsed Electro-Acoustic method) system. In the case of a quartz glass (pure $SiO_2$), no charge accumulation was observed either during or after the electron beam irradiation. On the contrary, positive charge accumulation was observed in glass samples containing metal-oxide components. It is found that the polarity of the observed charges depends on the contents of the impurities. To identify which impurity dominates the polarity of the accumulated charge, we measured charge distributions in several glass materials containing various metal-oxide components and calculated the trap energy depths from the charge decay characteristics of all glass samples.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1995.11a
• /
• pp.171-174
• /
• 1995

Space charge formation in epoxy loaded with silica and calcium carbonate has been studied. The epoxy itself showed almost no charge at up to 40 kV/mm. The addition of fillers such as SiO$_2$and CaCO$_3$resulted in homocharge formation, which was attributed to the interfacial trapping of injected charge at epoxy/filler interfaces. The amount of charge showed a maximum at 20-40 parts per hundred resin above which the charge decreased gradually. This was tentatively attributed to the enhanced interconection of charge transport path by an increased filler content

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.11a
• /
• pp.124-125
• /
• 2008

The charge trapping and tunnelling characteristics with various thickness of $Si_3N_4$ layer were investigated for application of TBE (Tunnel Barrier Engineered) non-volatile memory. We confirmed that the critical thickness of no charge trapping was existed with decreasing $Si_3N_4$ thickness. Also, the charge trap centroid x and charge trap density were extracted by using CCS (Constant Current Stress) method. Through the optimized thickness of $Si_3N_4$ layer, it can be improve the performance of non-volatile memory.

• Journal of the Korean Institute of Telematics and Electronics S
• /
• v.35S no.1
• /
• pp.14-22
• /
• 1998

The Mathematic model of bit synchronization charge-pump Phase Locked Loop (PLL) is presented which takes into account the aperiodic reference pulses and the leakage current of the loop filter. We derive theoreitcal static phase error, overload and stability of bit synchronization charge-pump PLL using presented model and compare it with one of the conventional charge-pump PLL model. We can analysis bit synchronization charge-pump PLL exactly because our model takes into account the leakage current of the loop filter and aperiodic input data which are the charateristics of bit synchronization charge-pump PLL. We also verify it using HSPICE simulation with a bity synchronizer circuit.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.16 no.6
• /
• pp.873-879
• /
• 2016

A charge pump circuit with very short turn-on time is presented for minimizing reference spurs in CMOS PLL frequency synthesizers. In the source switching charge pump circuit, applying proper voltages to the source nodes of the current source FETs can significantly reduce the unwanted glitch at the output current while not degrading the rising time, thus resulting in low spur at the synthesizer output spectrum. A 1.1-1.6 GHz PLL synthesizer employing the proposed charge pump circuit is fabricated in 65 nm CMOS. The current consumption of the charge pump is $490{\mu}A$ from 1 V supply. Compared to the conventional charge pump, it is shown that the reference spur is improved by dB through minimizing the turn-on time. Theoretical analysis is described to show that the measured results agree well with the theory.