• 한국음향학회지
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• 제32권5호
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• pp.393-401
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• 2013

본 논문에서는 $48{\times}64$ 채널로 이루어진 압전단결정 2D 배열형 초음파 트랜스듀서의 설계, 제작 및 평가를 하였다. 전기적 연결이 용이한 평면배열 구조를 선정한 후, 그에 맞게 구성소자를 제작하였다. 유한요소 해석을 통하여 트랜스듀서의 세부 구조를 설계하였다. 트랜스듀서의 성능을 향상시키기 위해 치폭의 너비와 재료를 조절하여 소자간 상호간섭을 저감하고, 압전단결정 및 정합층의 최적 두께를 설계하여 목표 주파수 대역폭을 구현하였다. 설계에 따라 트랜스듀서의 시작품을 제작하고 그 특성을 측정한 후, 측정된 결과를 유한요소 해석 결과와 비교하여 개발된 트랜스듀서의 성능을 평가하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.157-157
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• 2008

As the minimum feature size of semiconductor devices scales down to nano-scale regime, ultra shallow junction is highly necessary to suppress short channel effect. At the same time, Ni-silicide has attracted a lot of attention because silicide can improve device performance by reducing the parasitic resistance of source/drain region. Recently, further improvement of device performance by reducing silicide to source/drain region or tuning the work function of silicide closer to the band edge has been studied extensively. Rare earth elements, such as Er and Yb, and Pd or Pt elements are interesting for n-type and p-type devices, respectively, because work function of those materials is closer to the conduction and valance band, respectively. In this paper, we increased the work function between Ni-silicide and source/drain by using Pd stacked structure (Pd/Ni/TiN) for high performance PMOSFET. We demonstrated that it is possible to control the barrier height of Ni-silicide by adjusting the thickness of Pd layer. Therefore, the Ni-silicide using the Pd stacked structure could be applied for high performance PMOSFET.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2001년도 추계학술대회논문집B
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• pp.22-29
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• 2001

The present study investigates the effects of various rib arrangements and rotating on heat/mass transfer in the cooling passage of gas turbine blades. The cooling passage has very complex flow structure, because of the rib turbulator and rotating effect. Experiments and numerical calculation are conducted to investigate the complex flow structures and heat transfer characteristics; the numerical computation is performed using a commercial code, FLUENT ver.5, to calculate the flow structures and the experiments are conducted to measure heat/mass transfer coefficients using a naphthalene sublimation technique. For the rotating duct tests, the test duct, which is the cross section of is $20mm\times40mm$ (the hydraulic diameter, $D_h$, of 26.7 mm, has two-pass with $180^{\circ}$ turning and the rectangular ribs on the wall. The rib angle of attack is $70^{\circ}$ and the maximum radius of rotation is $21.63D_h$. The partition wall has 10 mm thickness, which is 0.5 times to the channel width, and the distance between the tip of the partition wall and the outer wall of the turning region is 26.7 mm $(1D_h)$. The turning effect of duct flow makes the very complex flow structure including Dean type vortex and high turbulence, so that the heat/mass transfer increases in the turning region and at the entrance of the second pass. The Coriolis effect deflects the flow to the trailing surface, resulting in enhancement of the heat/mass transfer on the trailing surface and reduction on the leading surface in the first pass. However, the opposite phenomena are observed in the second pass. The each rib arrangement makes different secondary flow patterns. The complex heat/mass transfer characteristics are observed by the combined effects of the rib arrangements, duct rotation and flow turning.

• 한국광학회지
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• 제14권1호
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• pp.97-102
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• 2003

이차원 표면 플라즈몬의 공명 흡수와 포토 마스크를 이용하여 11-MUA(11-Mercaptoundecanoic acid)와 11-MUOH(11-Mercaptoundecanol) 둥으로 이루어진 자기조립 단분자막(Self-Assembled Monolayer; SAM)의 다채널 영상을 얻었다. 통상의 Photoresist를 이용한 리토그래피 대신에 Thiol bonding의 광산화를 이용하여 패터닝 과정을 줄이고, 백색광 및 대역통과 필터(λ$_{0}$=633nm)를 이용하여 입사광으로써 레이저를 사용할 때 나타나는 간섭무늬를 줄였다. 이로부터 나타나는 이차원 영상의 명암을 정량적으로 보정하면 수 나노미터(nm) 두께의 변화를 측정할 수 있다. 또한 표면 플라즈몬 공명법은 국소화된 근접장 (소산장)을 이용하는 방법으로서, 통상 많이 이용되는 형광법 등에서 나타나는 광탈색(Photobleaching)이나 소광(Quenching) 현상이 없이 시료의 처리가 간단하고, 영상 신호의 시간에 따른 변화가 극히 적으며, 실시간으로 신호의 변화를 측정할 수 있다는 장점이 있다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.254-254
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• 2011

The memories with nano-particles are very attractive because they are promising candidates for low operating voltage, long retention time and fast program/erase speed. In recent, various nano-floating gate memories with metal-oxide nanocrystals embedded in organic and inorganic layers have been reported. Because of the carrier generation in semiconductor, induced photon pulse enhanced the program/erase speed of memory device. We studied photo-induced electrical properties of these metal-oxide nanocrystal memory devices. At first, 2~10-nm-thick Sn and In metals were deposited by using thermal evaporation onto Si wafer including a channel with $n^+$ poly-Si source/drain in which the length and width are 10 ${\mu}m$ each. Then, a poly-amic-acid (PAA) was spin coated on the deposited Sn film. The PAA precursor used in this study was prepared by dissolving biphenyl-tetracarboxylic dianhydride-phenylene diamine (BPDA-PDA) commercial polyamic acid in N-methyl-2-pyrrolidon (NMP). Then the samples were cured at 400$^{\circ}C$ for 1 hour in N atmosphere after drying at 135$^{\circ}C$ for 30 min through rapid thermal annealing. The deposition of aluminum layer with thickness of 200 nm was followed by using a thermal evaporator, and then the gate electrode was defined by photolithography and etching. The electrical properties were measured at room temperature using an HP4156a precision semiconductor parameter analyzer and an Agilent 81101A pulse generator. Also, the optical pulse for the study on photo-induced electrical properties was applied by Xeon lamp light source and a monochromator system.

• 대한디지털의료영상학회논문지
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• 제16권1호
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• pp.27-33
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• 2014

The purpose of this study evaluated the hemo-dynamic information within 30 seconds clinically in 3D breast MRI. From January to March 2014, A total of 40 people were examined at 1.5 Tesla(Philips, Medical System, Achieva, The Netherlands) MRI equipments using 16 channel SENSE breast coil. The imaging parameters on vibrant are fellow as: $TR/TE/FA^{\circ}$/Matrix size/Slice thickness/Slab($5ms/2ms/10^{\circ}/180{\times}139{\times}2mm/80$). This study used a Gadovist and injected it with injection speed of 4 ml /sec by auto injector with 15 ml saline flushing. Firstly, for the delay time study, it divided three different delay time from immediately, 20 seconds, and 30 seconds. In quantitative analysis, the ROI signal intensities of tumor and surrounding tissues were measured retrospectively. In qualitative analysis, the image quality was scored from 1 to 5 point by one experienced radiological technologists as a visual test. The significance level of each delay time was evaluated with a one-way ANOVA(p<0.05). In the visual test, score levels on 30 seconds delay time was a little bit higher than others(p<0.05). The signal intensity of the tumor were $1445{\pm}360$, $1410{\pm}320$, $1510{\pm}415$ on immediately, 20 seconds, and 30 seconds and score levels were $4.18{\pm}0.85$, $3.54{\pm}0.94$, $4.45{\pm}0.74$(p<0.05). The data on immediate images showed better results than that others(p<0.05). Conclusively, Although it has been high scored in 30sec delay time for visual test in order to avoid failure in 20second, 30seconds delay time after contrast media administration, we recommend that the DCE 3D breast MRI commence immediately.

• 해양환경안전학회지
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• 제12권1호
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• pp.9-14
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• 2006

유기도막의 방식성능은 도막의 수지성분과 안료의 화학적 특성에 의존한다 전자는 부식인자의 침투를 차단 및 지연시키는 역할을 하며, 후자는 침투된 부식인자들에 의해 일어나는 부식반응을 억제하는 기능을 갖고 있다. 또한 도막 자체의 영향 외에, 외부 환경에 의해서 다르게 나타난다. 본 연구에서는 교류 임피던스 법을 이용하여 유속과 그에 따른 유동 전단응력에 의한 도막의 열화거동을 조사하였다. 실험기 사용된 도막의 두께는 $70{\mu}m$에서 $140{\mu}m$까지 변화시켰다. 두꺼운 도막($140{\mu}m$) 에서는 유속이 증가함에 따라 물 흡수량의 감소와 높은 임피던스 특성을 나타내었다. 그러나 얇은 도막($90{\mu}m$) 에서는 유속이 증가함에 따라 도막의 파괴가 진행되고 있음을 확인할 수 있었다. 도막에 가해지는 전단응력이 증가할수록, 즉 선박의 운항속도가 증대될수록 도막의 열화에 의하여 방식성능이 떨어짐을 확인할 수 있었다.

• 한국전기전자재료학회논문지
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• 제13권11호
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• pp.914-920
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• 2000

When the charge-trap type SONOS(polysilicon-oxide-nitride-oxide-semiconductor) cells are used to flash memory, the tunneling program/erase condition to minimize the generation of interface traps was investigated. SONOSFET NVSM(Nonvolatile Semiconductor Memory) cells were fabricated using 0.35 ㎛ standard memory cell embedded logic process including the ONO cell process, based on retrograde twin-well, single-poly, single metal CMOS(Complementary Metal Oxide Semiconductor) process. The thickness of ONO triple-dielectric for the memory cell is tunnel oxide of 24 $\AA$, nitride of 74 $\AA$, blocking oxide of 25 $\AA$, respectively. The program mode(V$\_$g/=7, 8, 9 V, V$\_$s/=V$\_$d/=-3 V, V$\_$b/=floating) and the erase mode(V$\_$g/=-4, -5, -6 V, V$\_$s/=V$\_$d/=floating, V$\_$b/=3 V) by MFN(Modified Fowler-Nordheim) tunneling were used. The proposed programming condition for the flash memory of SONOSFET NVSM cells showed less degradation(ΔV$\_$th/, S, G$\_$m/) characteristics than channel MFN tunneling operation. Also, the program inhibit conditins of unselected cell for separated source lines NOR-type flash memory application were investigated. we demonstrated that the phenomenon of the program disturb did not occur at source/drain voltage of 1 V∼12 V and gate voltage of -8 V∼4 V.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.381-381
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• 2010

$(ZrO_2)_{0.66}(HfO_2)_{0.34}$ thin films as gate dielectrics have been proposed to overcome the problems of tunneling current and degradation mobility inachieving a thin equivalent oxide thickness. An extremely thin $SiO_2$ layer is used in order to separate the carrier in MOSFET channel from the dielectric field fluctuation caused by phonons in the dielectric which decreases the carrier mobility. The electronic and optical properties influenced the device performance to a great extent. $(ZrO_2)_{0.66}(HfO_2)_{0.34}$ dielectric films on p-Si (100) were grown by atomic layer deposition method, for which the conduction band offsets, valence band offsets and band gapswere obtained by using X-ray photoelectron spectroscopy and reflection electron energy loss spectroscopy. The band gap, valence and conduction band offset values for $(ZrO_2)_{0.66}(HfO_2)_{0.34}$ dielectric thin film, grown on Si substrate were about 5.34, 2.35 and 1.87 eV respectively. This band alignment was similar to that of $ZrO_2$. In addition, The dielectric function (k, $\omega$), index of refraction n and the extinction coefficient k for the $(ZrO_2)_{0.66}(HfO_2)_{0.34}$ thin films were obtained from a quantitative analysis of REELS data by comparison to detailed dielectric response model calculations using the QUEELS-$\varepsilon$(k, $\omega$)-REELS software package. These optical properties are similar with $ZrO_2$ dielectric thin films.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2005년도 추계학술대회 논문집
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• pp.506-508
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• 2005

In general, organic TFTs are comprised of four components: gate electrode, gate dielectric, organic active semiconductor layer, and source and drain contacts. The TFT current, in turn, is typically determined by channel length and width, carrier field effect mobility, gate dielectric thickness and permittivity, contact resistance, and biasing conditions. More recently, a number of techniques and processes have been introduced to the fabrication of OTFT circuits and displays that aim specifically at reduced fabrication cost. These include microcontact printing for the patterning of metals and dielectrics, the use of photochemically patterned insulating and conducting films, and inkjet printing for the selective deposition of contacts and interconnect pattern. In the fabrication of organic TFTs, microcontact printing has been used to pattern gate electrodes, gate dielectrics, and source and drain contacts with sufficient yield to allow the fabrication of transistors. We were fabricated a pentacene OTFTs on flexible PEN film. Au/Cr was used for the gate electrode, parylene-c was deposited as the gate dielectric, and Au/Cr was chosen for the source and drain contacts; were all deposited by ion-beam sputtering and patterned by microcontact printing and lift-off process. Prior to the deposition of the organic active layer, the gate dielectric surface was treated with octadecyltrichlorosilane(OTS) from the vapor phase. To complete the device, pentacene was deposited by thermal evaporation and patterned using a parylene-c layer. The device was shown that the carrier field effect mobility, the threshold voltage, the subthreshold slope, and the on/off current ratio were improved.