• 전자공학회논문지A
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• 제30A권4호
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• pp.40-50
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• 1993

In this paper, MODFET devices with various gate length are simulated using the Monte-Carlo method. The number of superparticle is 5000 and the Poisson equation is solved to obtain field distribution. The structure of MODFET is n-AlGaAs/i-AlGaAs/iGaAs and doping concentration of n-AlGaAs layer is 1${\times}10^{17}/cm^{3}$ and the thickness is 500.angs., and the thickness of i-AlGaAs is 50$\AA$. The devices with gate length 0.2$\mu$m, 0.5$\mu$m, 1.0$\mu$m respctively are simulated and the current-voltage curves and transport characteristics of that devices are obtained. Occupancy of each subband and electron energy distribution and conduction energy band in channel have been analyzed to obtain transport characteristics, and particles transposed from source to drain have been analyzed to current-voltage curves. Current level is highest for the device of Lg=0.2$\mu$m and transconductance of this device is 310mS/mm.

• 한국전기전자재료학회논문지
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• 제29권12호
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• pp.759-763
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• 2016

We demonstrate the utilization of ion gel gate dielectrics for operating non-volatile transistor memory devices based on polymer semiconductor thin films. The gating process in typical electrolyte-gated polymer transistors occurs upon the penetration and escape of ionic components into the active channel layer, which dopes and dedopes the polymer film, respectively. Therefore, by controlling doping and dedoping processes, electrical current signals through the polymer film can be memorized and erased over a period of time, which constitutes the transistor-type memory devices. It was found that increasing the thickness of polymer films can enhance the memory performance of device including (i) the current signal ratio between its memorized state and erased state and (ii) the retention time of the signal.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제51권9호
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• pp.397-407
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• 2002

A new simulator which predicts the quantum effect in NMOSFET structure is developed. Using the self-consistent method by numerical method, this simulator accurately predicts the carrier distribution due to improved calculation precision of potential in the inversion layer. However, previous simulator uses analytical potential distribution or analytic function based fitting parameter Using the developed simulator, threshold voltage increment and gate capacitance reduction due to the quantum effect are analyzed in NMOS. Especially, as oxide thickness and channel doping dependence of quantum effect is analyzed, and the property analysis for the next generation device is carried out.

• 콘크리트학회논문집
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• 제15권6호
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• pp.924-929
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• 2003

A majority of infrastructures has been deteriorated over time. Therefore, it is very important to verify the quality of construction, and the level of structural deterioration in existing structures, to ensure their safety and functionality. Many researchers have studied non-destructive testing (NDT) methods to identify structural problems in existing structures. The impact echo technique is one of the widely used NDT techniques. The impact echo technique has several inherent problems, including the difficulties in P-wave velocity evaluation due to inhomogeneous concrete properties, deterioration of evaluation accuracy where multiple reflection boundaries exist, and the influence of the receiver location in evaluating the thickness of the tested structures. Therefore, the objective of this paper is to propose an enhanced impact echo technique that can reduce the aforementioned problems and develop a Virtual Instrument for the application via a thickness evaluation technique which has same technical background to find deterioration in concrete structures. In the proposed impact echo technique, transfer function from dual channel system analysis is used, and coherence is improved to achieve reliable data. Also an averaged signal -ensemble- is used to achieve more reliable results. From the analysis of transfer function, the thickness is effectively identified.

• 대한기계학회논문집B
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• 제27권4호
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• pp.476-483
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• 2003

A mathematical model is presented to predict the two-phase flow and heat transfer phenomena of the evaporating extended meniscus region in a micro-channel. The pressure difference at the liquid-vapor interface can be obtained by the augmented Laplace-Young equation. The correlative equations for film thickness, pressure, and velocity in the meniscus region are derived by applying the mass, momentum, and energy equations into the control volume. The results show that increasing the heat flux and the liquid inlet velocity cause the length and liquid film thickness of the extended meniscus region to decrease. The variation, however, of the heat flux and liquid inlet velocity has no effect on the profile of film thickness. The majority of heat is transferred through the thin film region that is a very small region in the extended meniscus region. It is also found that the vapor velocity increases gradually in the meniscus region. However, it increases sharply at the junction of the meniscus and thin film regions.

• Nuclear Engineering and Technology
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• 제47권4호
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• pp.389-397
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• 2015

The effects of mixing vanes (MVs) attached to a grid spacer on the characteristics of air-water annular flows were experimentally investigated. To know the effects, a grid spacer with or without MV was inserted in a vertical circular pipe of 16-mm internal diameter. For three cases (i.e., no spacer, spacer without MV, and spacer with MV), the liquid film thickness, liquid entrainment fraction, and deposition rate were measured by the constant current method, single liquid film extraction method, and double liquid film extraction method, respectively. The MVs significantly promote the re-deposition of liquid droplets in the gas core flow into the liquid film on the channel walls. The deposition mass transfer coefficient is three times higher for the spacer with MV than for the spacer without MV, even for cases 0.3-m downstream from the spacer. The liquid film thickness becomes thicker upstream and downstream for the spacer with MV, compared with the thickness for the spacer without MV and for the case with no spacer.

• 한국재료학회지
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• 제13권9호
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• pp.593-597
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• 2003

Anodic aluminum oxide (AAO) membrane was made of aluminum sheet (99.6%, 0.2 mm thickness). The regular array of hexagonal nano pores or channels were prepared by two step anodization process. A detail description of the AAO fabrication is presented. After the 1st anodization in oxalic acid (0.3 M) at 45 V, The formed AAO was removed by etching in a solution of 6 wt% $H_3$$PO_4$＋1.8 wt% $H_2$$CrO_4$. The regular arrangement of the pores was obtained by the 2nd anodization, which was carried out in the same condition as the 1st anodization. Subsequently, the alumina barrier layer at the bottom of the channel layer was removed in phosphoric acid (1M) after removing of aluminum. Pore diameter, density, and thickness could be controlled by the anodization process parameters such as applied voltage, anodizing time, pore widening time, etc. The pore diameter is proportional to the applied voltage and pore widening time. The pore density and thickness can be controlled by anodization temperature and voltage.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2003년도 하계종합학술대회 논문집 II
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• pp.775-778
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• 2003

In this paper, we report our quantum mechanical approach for the analysis of FinFET in a self-consistent manner. The simulation results are carefully investigated for FinFET with an electrical channel length(Leff) of 30nm and with a fin thickness(Tsi) of 10～35nm. We also demonstrated the differences in the simulations for the classical and quantum-mechanical simulation approaches, respectively. These simulation results also imply that it is necessary to solve the coupled Poisson and Schrodinger equations in a self-consistent manner for analyzing the sub-30nm MOSFETS including FinFET.

• 대한화학회지
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• 제6권2호
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• pp.155-157
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• 1962

A tiny dust found at the balcony of the Institute indicated about 8,0000 counts per minute by T.G.C.-2 Geiger-Muller tube (1.8mg/$cm^2$ window-thickness) at the distance of 2cm from the window. The main fission fragments, as identified by the present analysis, are 12.5day Ba-140 and 33.1 day Ce-141. The gamma energies were determined using $2"{\times}2"$ NaI(Tl) scintillation detector connected to RCL-256 channel pulse heigt analyzer. The beta energies were evaluated by Feather plot.

• Journal of Magnetics
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• 제4권4호
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• pp.111-114
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• 1999

Numerical calculation for temperature dependence of galvanomagnetic properties of thin bismuth films is pursued. The quasi-two dimensional system is treated in the perturbation formalism of previous study, where realistic screened potential due to impurity is assumed to be the only scattering channel. The potential is separated into pure two dimensional part and the remaining presumed perturbation part. Relaxation time and mobilities for both electron and hole are evaluated, then temperature dependence of the Hall coefficient and magnetoresistance is obtained. The broad minimum of magnetoresistnace is manifested, and the interpretation under the kinetic theory is made. Thickness dependence of the quantities are also shown, which are in good agreement with the expected quantum size effect.