• The Journal of the Acoustical Society of Korea
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• v.32 no.5
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• pp.393-401
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• 2013

In this paper, a $48{\times}64$ channel 2D array ultrasonic transducer with piezoelectric single crystals was designed, fabricated, and evaluated. Structure of the transducer was chosen to facilitate the electric connection on the planar array, and then components were fabricated in accordance with the structure. Detailed structure of the transducer was designed through finite element analyses. In order to improve the performance of the transducer, the crosstalk between adjacent elements was reduced through the control of kerf width and material, and the target frequency bandwidth was achieved through optimal design of the thickness of the single crystal and matching layers. After fabricating a prototype of the transducer according to the design and measuring its characteristics, the results were compared with those of finite element analyses to evaluate the performance of the developed transducer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.157-157
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• 2008

As the minimum feature size of semiconductor devices scales down to nano-scale regime, ultra shallow junction is highly necessary to suppress short channel effect. At the same time, Ni-silicide has attracted a lot of attention because silicide can improve device performance by reducing the parasitic resistance of source/drain region. Recently, further improvement of device performance by reducing silicide to source/drain region or tuning the work function of silicide closer to the band edge has been studied extensively. Rare earth elements, such as Er and Yb, and Pd or Pt elements are interesting for n-type and p-type devices, respectively, because work function of those materials is closer to the conduction and valance band, respectively. In this paper, we increased the work function between Ni-silicide and source/drain by using Pd stacked structure (Pd/Ni/TiN) for high performance PMOSFET. We demonstrated that it is possible to control the barrier height of Ni-silicide by adjusting the thickness of Pd layer. Therefore, the Ni-silicide using the Pd stacked structure could be applied for high performance PMOSFET.

• Proceedings of the KSME Conference
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• 2001.11b
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• pp.22-29
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• 2001

The present study investigates the effects of various rib arrangements and rotating on heat/mass transfer in the cooling passage of gas turbine blades. The cooling passage has very complex flow structure, because of the rib turbulator and rotating effect. Experiments and numerical calculation are conducted to investigate the complex flow structures and heat transfer characteristics; the numerical computation is performed using a commercial code, FLUENT ver.5, to calculate the flow structures and the experiments are conducted to measure heat/mass transfer coefficients using a naphthalene sublimation technique. For the rotating duct tests, the test duct, which is the cross section of is $20mm\times40mm$ (the hydraulic diameter, $D_h$, of 26.7 mm, has two-pass with $180^{\circ}$ turning and the rectangular ribs on the wall. The rib angle of attack is $70^{\circ}$ and the maximum radius of rotation is $21.63D_h$. The partition wall has 10 mm thickness, which is 0.5 times to the channel width, and the distance between the tip of the partition wall and the outer wall of the turning region is 26.7 mm $(1D_h)$. The turning effect of duct flow makes the very complex flow structure including Dean type vortex and high turbulence, so that the heat/mass transfer increases in the turning region and at the entrance of the second pass. The Coriolis effect deflects the flow to the trailing surface, resulting in enhancement of the heat/mass transfer on the trailing surface and reduction on the leading surface in the first pass. However, the opposite phenomena are observed in the second pass. The each rib arrangement makes different secondary flow patterns. The complex heat/mass transfer characteristics are observed by the combined effects of the rib arrangements, duct rotation and flow turning.

• Korean Journal of Optics and Photonics
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• v.14 no.1
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• pp.97-102
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• 2003

Multi-channel images of 11-MUA(11-Mercaptoundecanoic acid) and 11-MUOH(11-Mercaptoundecanol) self-assembled monolayers were obtained by using two-dimensional surface plasmon resonance (SPR) absorption. The patterning process was simplified by exploiting direct photo-oxidation of thiol bonding (photolysis) instead of conventional photolithography. Sharper images were resolved by using a white light source in combination with a narrow bandpass filter in the visible region, minimizing the diffraction patterns on the images. The line profile calibration of the image contrast caused by different resonance conditions at each point on the sensor surface (at a fixed incident angle) enables us to discriminate the monolayer thickness in nanometer scale. Furthermore, there is no signal degradation such as photo bleaching or quenching, which are common in the detection methods based on fluorescence.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.254-254
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• 2011

The memories with nano-particles are very attractive because they are promising candidates for low operating voltage, long retention time and fast program/erase speed. In recent, various nano-floating gate memories with metal-oxide nanocrystals embedded in organic and inorganic layers have been reported. Because of the carrier generation in semiconductor, induced photon pulse enhanced the program/erase speed of memory device. We studied photo-induced electrical properties of these metal-oxide nanocrystal memory devices. At first, 2~10-nm-thick Sn and In metals were deposited by using thermal evaporation onto Si wafer including a channel with $n^+$ poly-Si source/drain in which the length and width are 10 ${\mu}m$ each. Then, a poly-amic-acid (PAA) was spin coated on the deposited Sn film. The PAA precursor used in this study was prepared by dissolving biphenyl-tetracarboxylic dianhydride-phenylene diamine (BPDA-PDA) commercial polyamic acid in N-methyl-2-pyrrolidon (NMP). Then the samples were cured at 400$^{\circ}C$ for 1 hour in N atmosphere after drying at 135$^{\circ}C$ for 30 min through rapid thermal annealing. The deposition of aluminum layer with thickness of 200 nm was followed by using a thermal evaporator, and then the gate electrode was defined by photolithography and etching. The electrical properties were measured at room temperature using an HP4156a precision semiconductor parameter analyzer and an Agilent 81101A pulse generator. Also, the optical pulse for the study on photo-induced electrical properties was applied by Xeon lamp light source and a monochromator system.

• Korean Journal of Digital Imaging in Medicine
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• v.16 no.1
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• pp.27-33
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• 2014

The purpose of this study evaluated the hemo-dynamic information within 30 seconds clinically in 3D breast MRI. From January to March 2014, A total of 40 people were examined at 1.5 Tesla(Philips, Medical System, Achieva, The Netherlands) MRI equipments using 16 channel SENSE breast coil. The imaging parameters on vibrant are fellow as: $TR/TE/FA^{\circ}$/Matrix size/Slice thickness/Slab($5ms/2ms/10^{\circ}/180{\times}139{\times}2mm/80$). This study used a Gadovist and injected it with injection speed of 4 ml /sec by auto injector with 15 ml saline flushing. Firstly, for the delay time study, it divided three different delay time from immediately, 20 seconds, and 30 seconds. In quantitative analysis, the ROI signal intensities of tumor and surrounding tissues were measured retrospectively. In qualitative analysis, the image quality was scored from 1 to 5 point by one experienced radiological technologists as a visual test. The significance level of each delay time was evaluated with a one-way ANOVA(p<0.05). In the visual test, score levels on 30 seconds delay time was a little bit higher than others(p<0.05). The signal intensity of the tumor were $1445{\pm}360$, $1410{\pm}320$, $1510{\pm}415$ on immediately, 20 seconds, and 30 seconds and score levels were $4.18{\pm}0.85$, $3.54{\pm}0.94$, $4.45{\pm}0.74$(p<0.05). The data on immediate images showed better results than that others(p<0.05). Conclusively, Although it has been high scored in 30sec delay time for visual test in order to avoid failure in 20second, 30seconds delay time after contrast media administration, we recommend that the DCE 3D breast MRI commence immediately.

• Journal of the Korean Society of Marine Environment & Safety
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• v.12 no.1 s.24
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• pp.9-14
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• 2006

Analysis has been made of the anti-corrosive property of organic coating under the shear stress of the flow by means of AC impedance method. Marine anti-corrosive painted panels were placed in the water channel with varying flow rate, thereby experiencing varying flow shear stress on the surfaces. The velocities of the salt water were ranged from 1.48 to 5.2 m/s and the coating thickness of from $70{\mu}m\;to\;140{\mu}m$. For all coating thicknesses investigated, the poorer anti-corrosive property and the lower adhesion strength have been found for the higher shear stress. It has been found that the shear stress accelerates the aging of organic marine coatings.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.11
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• pp.914-920
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• 2000

When the charge-trap type SONOS(polysilicon-oxide-nitride-oxide-semiconductor) cells are used to flash memory, the tunneling program/erase condition to minimize the generation of interface traps was investigated. SONOSFET NVSM(Nonvolatile Semiconductor Memory) cells were fabricated using 0.35 ㎛ standard memory cell embedded logic process including the ONO cell process, based on retrograde twin-well, single-poly, single metal CMOS(Complementary Metal Oxide Semiconductor) process. The thickness of ONO triple-dielectric for the memory cell is tunnel oxide of 24 $\AA$, nitride of 74 $\AA$, blocking oxide of 25 $\AA$, respectively. The program mode(V$\_$g/=7, 8, 9 V, V$\_$s/=V$\_$d/=-3 V, V$\_$b/=floating) and the erase mode(V$\_$g/=-4, -5, -6 V, V$\_$s/=V$\_$d/=floating, V$\_$b/=3 V) by MFN(Modified Fowler-Nordheim) tunneling were used. The proposed programming condition for the flash memory of SONOSFET NVSM cells showed less degradation(ΔV$\_$th/, S, G$\_$m/) characteristics than channel MFN tunneling operation. Also, the program inhibit conditins of unselected cell for separated source lines NOR-type flash memory application were investigated. we demonstrated that the phenomenon of the program disturb did not occur at source/drain voltage of 1 V∼12 V and gate voltage of -8 V∼4 V.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.381-381
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• 2010

$(ZrO_2)_{0.66}(HfO_2)_{0.34}$ thin films as gate dielectrics have been proposed to overcome the problems of tunneling current and degradation mobility inachieving a thin equivalent oxide thickness. An extremely thin $SiO_2$ layer is used in order to separate the carrier in MOSFET channel from the dielectric field fluctuation caused by phonons in the dielectric which decreases the carrier mobility. The electronic and optical properties influenced the device performance to a great extent. $(ZrO_2)_{0.66}(HfO_2)_{0.34}$ dielectric films on p-Si (100) were grown by atomic layer deposition method, for which the conduction band offsets, valence band offsets and band gapswere obtained by using X-ray photoelectron spectroscopy and reflection electron energy loss spectroscopy. The band gap, valence and conduction band offset values for $(ZrO_2)_{0.66}(HfO_2)_{0.34}$ dielectric thin film, grown on Si substrate were about 5.34, 2.35 and 1.87 eV respectively. This band alignment was similar to that of $ZrO_2$. In addition, The dielectric function (k, $\omega$), index of refraction n and the extinction coefficient k for the $(ZrO_2)_{0.66}(HfO_2)_{0.34}$ thin films were obtained from a quantitative analysis of REELS data by comparison to detailed dielectric response model calculations using the QUEELS-$\varepsilon$(k, $\omega$)-REELS software package. These optical properties are similar with $ZrO_2$ dielectric thin films.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.10a
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• pp.506-508
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• 2005

In general, organic TFTs are comprised of four components: gate electrode, gate dielectric, organic active semiconductor layer, and source and drain contacts. The TFT current, in turn, is typically determined by channel length and width, carrier field effect mobility, gate dielectric thickness and permittivity, contact resistance, and biasing conditions. More recently, a number of techniques and processes have been introduced to the fabrication of OTFT circuits and displays that aim specifically at reduced fabrication cost. These include microcontact printing for the patterning of metals and dielectrics, the use of photochemically patterned insulating and conducting films, and inkjet printing for the selective deposition of contacts and interconnect pattern. In the fabrication of organic TFTs, microcontact printing has been used to pattern gate electrodes, gate dielectrics, and source and drain contacts with sufficient yield to allow the fabrication of transistors. We were fabricated a pentacene OTFTs on flexible PEN film. Au/Cr was used for the gate electrode, parylene-c was deposited as the gate dielectric, and Au/Cr was chosen for the source and drain contacts; were all deposited by ion-beam sputtering and patterned by microcontact printing and lift-off process. Prior to the deposition of the organic active layer, the gate dielectric surface was treated with octadecyltrichlorosilane(OTS) from the vapor phase. To complete the device, pentacene was deposited by thermal evaporation and patterned using a parylene-c layer. The device was shown that the carrier field effect mobility, the threshold voltage, the subthreshold slope, and the on/off current ratio were improved.