• Proceedings of the Korean Nuclear Society Conference
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• 1997.10a
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• pp.481-486
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• 1997

The interfacial shear stress is experimentally investigated for co-current air-water stratified flow in inclined rectangular channels having a length of 1854mm, width of 120mm and height of 40mm at almost atmospheric pressure. Experiments are carried out in several inclinations from $0^{\circ}\;up\;to\;10^{\circ}$. The local film thickness and the wave height are measured at three locations, i.e., L/H = 8,23, and 40. According to the inclination angle, the experimental data are categorized into two groups; nearly horizontal data group ($0^{\circ}\;{\leq}\;{\theta}\;{\leq}\;0.7^{\circ}$), and inclined channel data group ($0.7^{\circ}\;{\leq}\;{\theta}\;{\leq}\;10^{\circ}$). Experimental observations for nearly horizontal data group show that the flow is not fully developed due to the water level gradient and the hydraulic jump within the channel. For the inclined channel data group, a dimensionless wave height, $\Delta$h/h, is empirically correlated in terms of $Re_{G}$ and h/H. A modified root-mean-square wave height is proposed to consider the effects of the interfacial and wave propagation velocities. It is found that an equivalent roughness has a linear relationship with the modified root-mean-square wave height and its relationship is independent of the inclination.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.9
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• pp.737-740
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• 2009

SiC power device possesses attractive features, such as high breakdown voltage, high-speed switching capability, and high temperature operation. In general, device design has a significant effect on the switching characteristics, In this paper, we demonstrated that the switching performance of DMOSFETs are dependent on the with Channel length ($L_{channel}$) and Current Spreading Layer thickness ($T_{CSL}$) by using 2-D Mixed-mode simulations. The 4H-SiC DMOSFETs with a JFET region designed to block 800 V were optimized for minimum loss by adjusting the parameters of the JFET region, CSL, and epilayer. It is found that improvement of switching speed in 4H-SiC DMOSFETs is essential to reduce the gate-source capacitance and channel resistance. Therefore, accurate modeling of the operating conditions are essential for the optimizatin of superior switching performance.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.26 no.10
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• pp.1982-1988
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• 2002

Micro-injection molding and microfluidic devices with the help of MEMS technologies including the LIGA process are expected to play important roles in micro-system industries, in particular the bio-application industry, in the near future. Understanding fluid flows in micro-channels is important since micro-channels are typical geometry in various microfluidic devices and mold inserts for micro-injection molding. In the present study, Part 1, an experimental investigation has been carried out to understand the detailed flow phenomena in micro-channel filling process. Three sets of micro-channels of different thickness (40um,30um and 2011m) were fabricated using SU-8 on silicon wafer substrate. And a flow visualization system was developed to observe the filling flow into the micro-channels. Experimental flow observations are extensively made to find the effects of pressure, inertia force, viscous force and surface tension. A dimensional analysis for experimental results was carried out and several relationships A dimensionless parameters are obtained.

• Steel and Composite Structures
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• v.32 no.6
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• pp.769-778
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• 2019

The specially prefabricated steel moment connections with pyramid head is one of the significant innovations in the steel structures forms to improve the installation time and simplify the construction procedure. The beams in this structure form are supported by two top and bottom angles and web double angles. Such a configuration despite its advantages increases the welding operation and filed installation time and costs. In this paper, the effect of using beams with channel and I section in three classes of seismically compact, seismically non-compact, and slender section according to width-to-thickness ratio on the behavior of the connection was investigated under monotonic and cyclic loading. Modeling was performed by ABAQUS and verified by the results of an experimental specimen. The findings indicated that using I and channel section instead of angle section reduces the amount of welding materials as well as easing the installation procedure. However, it has no significant effect on the ultimate strength and ductility of the connection. Furthermore, if the beam section is seismically compact, this form is considered as a special moment frame that has a rotation capacity up to 0.04 radians without any reduction in connection moment resistance.

• International journal of steel structures
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• v.18 no.5
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• pp.1801-1817
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• 2018

This paper presents the numerical parametric analysis on the loading capacity of Channel purlins with screw-fastened sheeting, in which the effects of anti-sag bar and corrugated steel sheet on the ultimate capacity are studied. Results show that the setup of anti-sag bars can reduce the deformations and improve the ultimate capacity of C purlins. The traditional method of setting the anti-sag bars in the middle of the web is favorable. The changing of sheeting type, sheeting thickness and rib spacing has significant effects on the ultimate capacity of C purlins without anti-sag bars, compared with those with anti-sag bars. The proposed design formulas are relatively consistent with the calculations of EN 1993-1-3:2006, which is different from those of GB 50018-2002.

• Journal of Korea Water Resources Association
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• v.33 no.4
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• pp.461-469
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• 2000

An numerical analysis of sediment-laden flow is carried out, and results are compared with the experiments of Coleman(1981, 1986) that included the several cases varying sediment size and quantity in open channel flow. K-$\omega$ turbulence model is selected for the fully turbulent flow field, and the concentration equation considering the fall velocity is adopted for the concentration field. The model of Einstein and Chien(1955) is applied to couple the velocity field and the concentration field. Most of researches have been carried out without considering the bed-load thickness, but it is found that the bed-load thickness cannot be ignored in case of a large amount of sediment or a large size of it. The bed-load thickness and surface roughness are considered in this study. Here, $\beta$ value, which is defined by the reciprocal of turbulent Schmidt number and is related with the concentration profile, is found to be varied according to the sediment size and quantity. Even though most of researchers have insisted that $\beta$ had always larger than 1.0, it may be concluded that $\beta$ can have smaller value than 1.0, that is coincident with the report of recent research.

• Membrane Journal
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• v.28 no.3
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• pp.214-219
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• 2018

In the present study, superflux nickel capillary supports for gas and vapor separation membranes were prepared by a combined process of NIPS and sintering. Nickel capillary precursors were prepared by NIPS process from PSf-Ni-DMAC-PEG400 dope solution and was sintered at various temperatures in $H_2$ atmosphere to reliably produce Ni capillary support. The optimized Ni capillary support has an outer and inner diameters of 722 and $550{\mu}m$, and its thickness was $94{\mu}m$. It has 3-dimensional pore channel network and its porosity and mean pore diameter was 26% and $4{\mu}m$, respectively. Also, its mechanical strength was tested in tensile mode: its fracture load was 2.84 kgf and the fracture elongation was 13%. Finally, its single gas permeance was measured: He, $N_2$, $O_2$, and $CO_2$ permeance was 432,327, 281,119, 264,259, and 193,143 GPU, respectively. The superflux behavior could be explained from viscous flow through the macropores having a diameter of $4{\mu}m$ and narrow thickness. It could be concluded that the superflux behavior of the Ni capillary support was from the 3-D pore channel network and the small thickness.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.153-153
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• 2009

We investigated the dependence of the memory margin of the Cap-less memory cell on the strain of top silicon channel layer and also compared kink effect of strained Cap-less memory cell with the conventional Cap-less memory cell. For comparison of the characteristic of the memory margin of Cap-less memory cell on the strain channel layer, Cap-less transistors were fabricated on fully depleted strained silicon-on-insulator of 0.73-% tensile strain and conventional silicon-on-insulator substrate. The thickness of channel layer was fabricated as 40 nm to obtain optimal memory margin. We obtained the enhancement of 2.12 times in the memory margin of Cap-less memory cell on strained-silicon-on-insulator substrate, compared with a conventional SOI substrate. In particular, much higher D1 current of Cap-less memory cell was observed, resulted from a higher drain conductance of 2.65 times at the kink region, induced by the 1.7 times higher electron mobility in the strain channel than the conventional Cap-less memory cell at the effective field of 0.3MV/cm. Enhancement of memory margin supports the strained Cap-less memory cell can be promising substrate structures to improve the characteristics of Cap-less memory cell.

• Journal of the Korean Vacuum Society
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• v.22 no.6
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• pp.335-340
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• 2013

This paper is for the simulation design to enhance the breakdown voltage of MHEMTs with an InP-etchstop layer. Gate-recess and channel structures has been simulated and analyzed for the breakdown of the MHEMT devices. The fully removed recess structure at the drain side of MHEMT shows that the breakdown voltage enhances from 2 V to almost 4 V as the saturation current at gate voltage of 0 V is reduced from 90 mA to 60 mA at drain voltage of 2 V. This is because the electron-captured negatively fixed charges at the drain-side interface between the InAlAs barrier and the $Si_3N_4$ passivation layers deplete the InGaAs channel layer more and thus decreases the electron current passing the channel layer and thus the impact ionization in the channel become smaller. In addition, the replaced InGaAs/InP composite channel with the same thickness in the same asymmetrically recessed structure increases the breakdown voltage to 5 V due to the smaller impact ionization and mobility of the InP layer at high drain voltage.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.10 no.10
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• pp.1815-1821
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• 2006

In this paper, the subthreshold swing has been analyzed for FinFET under channel length of 20nm. The analytical current model has been developed , including thermionic current and tunneling current models. The potential distribution by Poisson equation and carrier distribution by Maxwell-Boltzman statistics are used to calculate thermionic emission current and WKB(Wentzel-Kramers-Brillouin) approximation to tunneling current. The cutoff current is obtained by simple adding two currents since two current is independent. The subthreshold swings by this model are compared with those by two dimensional simulation and two values agree well. Since the tunneling current increases especially under channel length of 10nm, the characteristics of subthreshold swing is degraded. The channel and gate oxide thickness have to be fabricated as am as possible to decrease this short channel effects, and this process has to be developed. The subthreshold swings as a function of channel doping concentrations are obtained. Note that subthreshold swings are resultly constant at low doping concentration.