• KSII Transactions on Internet and Information Systems (TIIS)
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• v.10 no.2
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• pp.608-627
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• 2016

Wireless mesh networks (WMNs) based on IEEE 802.11s have emerged as one of the prominent technologies in multi-hop communications. However, the deployment of WMNs suffers from serious interference problem which severely limits the system capacity. Using multiple radios for each mesh router over multiple channels, the interference can be reduced and improve system capacity. Nevertheless, interference cannot be completely eliminated due to the limited number of available channels. An effective approach to mitigate interference is to apply dynamic channel switching (DCS) in WMNs. Conventional DCS schemes trigger channel switching if interference is detected or exceeds a predefined threshold which might cause unnecessary channel switching and long protocol overheads. In this paper, a P-learning based dynamic switching algorithm known as learning automaton (LA)-based DCS algorithm is proposed. Initially, an optimal channel for communicating node pairs is determined through the learning process. Then, a novel switching metric is introduced in our LA-based DCS algorithm to avoid unnecessary initialization of channel switching. Hence, the proposed LA-based DCS algorithm enables each pair of communicating mesh nodes to communicate over the least loaded channels and consequently improve network performance.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.13 no.1
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• pp.110-132
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• 2019

To ensure reliable and secure communication in heterogeneous cellular network (HCN) with imperfect channel state information (CSI), we proposed a coordinated multipoint (CoMP) transmission scheme based on dual-threshold optimization, in which only base stations (BSs) with good channel conditions are selected for transmission. First, we present a candidate BSs formation policy to increase access efficiency, which provides a candidate region of serving BSs. Then, we design a CoMP networking strategy to select serving BSs from the set of candidate BSs, which degrades the influence of channel estimation errors and guarantees qualities of communication links. Finally, we analyze the performance of the proposed scheme, and present a dual-threshold optimization model to further support the performance. Numerical results are presented to verify our theoretical analysis, which draw a conclusion that the CoMP transmission scheme can ensure reliable and secure communication in dense HCNs with imperfect CSI.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.280-281
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• 2011

We fabricated the devices of TFT type with the amorphous chalcogenide channel. A single device consists of a Pt source and drain, a Ti glue layer and a GeSe chalcogenide channel layer on SiO2/Si substrate which worked as the gate. We confirmed the drain current with variations of gate bias and channel size. The I-V curves of the switching device are shown in Fig. 1. The channel of the device always contains amorphous state, but can be programmed into two states with different threshold voltages (Vth). In each state, the device shows a normal Ovonic switching behavior. Below Vth (OFF state), the current is low, but once the biasing voltage is greater than Vth (ON state), the current increases dramatically and the ON-OFF ratio is about 4 order. Based on the experiments, we contained the conclusion that the gate voltage can enhance the drain current, and the electric field by the drain voltage affects the amorphous-amorphous transition. The switching device always contains the amorphous state and never exhibits the Ohmic behavior of the crystalline state.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.7 no.5
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• pp.907-915
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• 2003

A very efficient packet transmission scheme is needed in the radio environment where radio resource is insufficient as compared with the environment of the wired communication. In general, dual mode packet transmission scheme is used broadly. Packets are transmitted through the dedicated or common chamois according to a switching criterion. The general criteria are the length and generation frequency of packet, that is, large and frequent packets are transmitted using a dedicated channel and small and infrequent packets are transmitted using a common channel. The performance of dual mode packet transmission scheme is closely related to the switching criteria. However, it is very difficult to find the optimal switching point because that is not fixed but variable according to the environment such as traffic load, length of generated packets, and the number of channels. In this paper, a new scheme for the dual mode packet transmission scheme using a dynamic switching threshold is proposed where the switching threshold is not fixed but variable according to the network environment. The performance of the proposed method is analyzed using a simulation. From the simulation results, it is shown that the performance of the proposed scheme is not very influenced by the network environment unlike the conventional dual mode packet transmission scheme.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.403-404
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• 2012

We fabricated TFT devices with the GeSe channel. A single device consists of a Pt source and drain, a Ti glue layer and a GeSe chalcogenide channel layer on SiO2/Si substrate which worked as the gate. We confirmed the drain current with variations of gate bias and channel size. The I-V curves of the switching device are shown in Fig. 1. The channel of the device always contains amorphous state, but can be programmed into two states with different threshold voltages (Vth). In each state, the device shows a normal Ovonic switching behavior. Below Vth (OFF state), the current is low, but once the biasing voltage is greater than Vth (ON state), the current increases dramatically and the ON-OFF ratio is high. Based on the experiments, we draw the conclusion that the gate voltage can enhance the drain current, and the electric field by the drain voltage affects the amorphous-amorphous transition. The switching device always contains the amorphous state and never exhibits the Ohmic behavior of the crystalline state.

• Journal of Communications and Networks
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• v.16 no.1
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• pp.56-66
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• 2014

We propose a novel opportunistic access scheme for cognitive radios in an interweave cognitive system, that considers the channel gain as well as the predicted idle channel probability (primary user occupancy: Busy/idle). In contrast to previous work where a cognitive user vacates a channel only when that channel becomes busy, the proposed scheme requires the cognitive user to switch to the channel with the next highest idle probability if the current channel's gain is below a certain threshold. We derive the threshold values that maximize the long term throughput for various primary user transition probabilities and cognitive user's relative movement.

• Journal of the Korean Institute of Telematics and Electronics
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• v.16 no.6
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• pp.11-15
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• 1979

Electrical switching phenomenon was observed in the Fe2O3-Bi2O3 system for the sintering temperature range of 700$^{\circ}$~85$0^{\circ}C$ for DC conductivity measurements of these sinterd materials in the ambient temperature range of 30$^{\circ}$~20$0^{\circ}C$ have shown that the conductivity increases with increasing the sitering temperature and ambient temperature. The formation of the current channel and the experimental evidence of the dependence of switching threshold voltage on the ambient temperature, strongly indicates that the main electrical switching mechanism of sintered Fe2O3-Bi2O3 is thermal effect.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.5
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• pp.504-510
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• 2015

This paper presents a power and area efficient SAR ADC for multi-channel near threshold-voltage (NTV) applications such as neural recording systems. This work proposes a split dual-capacitive-array (S-DCA) structure with shifted input range for ultra low-switching energy and architecture of multi-channel single-ended SAR ADC which employs only one comparator. In addition, the proposed ADC has the same amount of equivalent capacitance at two comparator inputs, which minimizes the kickback noise. Compared with conventional SAR ADC, this work reduces the total capacitance and switching energy by 84.8% and 91.3%, respectively.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.5
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• pp.982-988
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• 2012

This paper has presented the relation of scaling theory and threshold voltage of double gate(DG) MOSFET. In the case of conventional MOSFET, current and switching frequency have been analyzed based on scaling theory. To observe the possibility of application of scaling theory for threshold voltage of DGMOSFET, the change of threshold voltage has been observed and analyzed according to scaling theory. The analytical potential distribution of Poisson equation has been used, and this model has been already verified. To solve Poisson equation, charge distribution such as Gaussian function has been used. As a result, it has been observed that threshold voltage is grealty changed according to scaling factor and change rate of threshold voltages is traced for scaling of doping concentration in channel. This paper has explained for the best modified scaling theory reflected the influence of two gates as using weighting factor when scaling theory has been applied for channel length and channel thickness.

• The Journal of the Korea institute of electronic communication sciences
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• v.9 no.3
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• pp.279-284
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• 2014

This paper proposes a novel OLED pixel circuit to compensate the threshold voltage variation of p-channel low temperature polycrystalline silicon thin-film transistors (LTPS TFTs). The proposed 5-TFT OLED pixel circuit consists of 4 switching TFTs, 1 OLED driving TFT and 1 capacitor. One frame of the proposed pixel circuit is divided into initialization period, threshold voltage sensing and data programming period, data holding period and emission period. SmartSpice simulation results show that the maximum error rate of OLED current is -4.06% when the threshold voltage of driving TFT varies by ${\pm}0.25V$ and that of OLED current is 9.74% when the threshold voltage of driving TFT varies by ${\pm}0.50V$. Thus, the proposed 5T1C pixel circuit can realize uniform OLED current with high immunity to the threshold voltage variation of p-channel poly-Si TFT.