• The Journal of the Acoustical Society of Korea
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• v.18 no.1E
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• pp.3-6
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• 1999

In digital mobile communication system, the transmission errors affect the quality of output speech seriously. There are many error concealment techniques using a posteriori probability which provides information about any transmitted parameter. They need knowledge about channel transition probability as well as the 1st order Markov transition probability of codec parameters for estimation of transmitted parameters. However, in applications of mobile communication systems, the channel transition probability varies depending on nonstationary channel characteristics. The mismatch of designed channel transition probability of the estimator to actual channel transition probability degrades the performance of the estimator. In this paper, we proposed a new parameter estimator which adapts to the channel characteristics using short time average of maximum a posteriori probabilities(MAPs). The proposed scheme, when applied to the LSP parameter estimation, performed better than the conventional estimator which do not adapt to the channel characteristics.

• Proceedings of the Korea Information Processing Society Conference
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• 2023.11a
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• pp.512-513
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• 2023

CNN 기반 Deep Learning 분야에서 객체 탐지 정확도를 높이기 위해 모델의 많은 Parameter 가 사용된다. 많은 Parameter 를 사용하게 되면 최소 하드웨어 성능 요구치가 상승하고 처리속도도 감소한다는 문제가 있어, 최소한의 정확도 하락으로 Parameter 를 줄이기 위한 여러 Pruning 기법이 사용된다. 본 연구에서는 Neural Architecture Search(NAS) 기반 Channel Pruning 인 Artificial Bee Colony(ABC) 알고리즘을 사용하였고, 기존 NAS 기반 Channel Pruning 논문들이 Classification Task 에서만 실험한 것과 달리 Object Detection Task 에서도 NAS 기반 Channel Pruning 을 적용하여 기존 Uniform Pruning 과 비교할 때 파라미터 수 대비 정확도가 개선됨을 확인하였다.

• Transactions on Electrical and Electronic Materials
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• v.17 no.5
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• pp.270-274
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• 2016

This article investigates the use of the Gaussian-channel doping profile for the control of the short-channel effects in the double-gate MOSFET whereby a two-dimensional (2D) quantum simulation was used. The simulations were completed through a self-consistent solving of the 2D Poisson equation and the Schrodinger equation within the non-equilibrium Green’s function (NEGF) formalism. The impacts of the p-type-channel Gaussian-doping profile parameters such as the peak doping concentration and the straggle parameter were studied in terms of the drain current, on-current, off-current, sub-threshold swing (SS), and drain-induced barrier lowering (DIBL). The simulation results show that the short-channel effects were improved in correspondence with incremental changes of the straggle parameter and the peak doping concentration.

• Journal of the Korean Society for Industrial and Applied Mathematics
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• v.24 no.1
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• pp.103-119
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• 2020

In this work, the hydromagnetic and thermal characteristics of natural convection flow in a vertical parallel plate micro-porous-channel with suction/injection is analytically studied in the presence of Hall current by taking the temperature jump and the velocity slip at the wall into account. The governing equations, exhibiting the physics of the flow formation are displayed and the exact analytical solutions have been obtained for momentum and energy equations under relevant boundary conditions. The impact of distinct admissible parameters such as Hartmann number, Hall current parameter, permeability parameter, suction/injection parameter, fluid wall interaction parameter, Knudsen number and wall-ambient temperature ratio on the flow formation is discussed with the aid of line graphs. In particular, as rarefaction parameter on the micro-porous-channel surfaces increases, the fluid velocity increases and the volume flow rate decreases for injection/suction.

• The Journal of the Acoustical Society of Korea
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• v.15 no.1E
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• pp.65-69
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• 1996

This paper presents an algorithm for multipath channel parameter estimation by an improved Prony method. This algorithm applies a modified regularized spectral estimation to the conventional SVD Prony method. This method requires no a priori information on the number of multipath. The performance of the proposed algorithm is almost the same as that of the SVD based multipath channel parameter estimation algorithm.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.13 no.4
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• pp.1-7
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• 2013

In the next generation of mobile communication systems, high data rates and high capacity will be possible if multiple antennas are used at new frequencies. This paper presents the correlations between channel parameter path loss (PL), delay spread (DS), angular spread (AS) and K-factor established based on channel measurements. To avoid interference from Korean DTV broadcasting, we measured the channel characteristics in urban/rural/suburban areas on Jeju Island using a channel sounder and $4{\times}4$ antennas. The correlations between channel parameter show that the wireless channel characteristics can be determined and effective communication system design can be produced for use in similar environments.

• Journal of the Korean Society for Industrial and Applied Mathematics
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• v.22 no.4
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• pp.217-239
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• 2018

This paper examined the MHD and thermal behavior of unsteady mixed convection flow of a rotating fluid in a porous parallel plate channel in the presence of Hall current and heat source. The exact solutions of the concentration, energy and momentum equations are obtained. The influence of each governing parameter on non dimensional velocity, temperature, concentration, skin friction coefficient, rate of heat transfer and rate of mass transfer at the porous parallel plate channel surfaces is discussed. During the course of numerical computation, it is observed that as Hall current parameter and Soret number at the porous channel surfaces increases, the primary and secondary velocity profiles are increases while the primary and secondary skin friction coefficients are increases at the cold wall and decreases at the heated wall. In particular, it is noticed that a reverse trend in case of heat source parameter.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.382-383
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• 2013

Gate-controlled spin-orbit interaction parameter is a key factor for developing spin-Field Effect Transistor (Spin-FET) in a quantum well structure because the strength of the spin-orbit interaction parameter decides the spin precession angle [1]. Many researches show the control of spin-orbit interaction parameter in n-type quantum channels, however, for the complementary logic device p-type quantum channel should be also necessary. We have calculated the spin-orbit interaction parameter and the effective mass using the Shubnikov-de Haas (SdH) oscillation measurement in a GaSb two-dimensional hole gas (2DHG) structure as shown in Fig 1. The inset illustrates the device geometry. The spin-orbit interaction parameter of $1.71{\times}10^{11}$ eVm and effective mass of 0.98 $m^0$ are obtained at T=1.8 K, respectively. Fig. 2 shows the gate dependence of the spin-orbit interaction parameter and the hole concentration at 1.8 K, which indicates the spin-orbit interaction parameter increases with the carrier concentration in p-type channel. On the order hand, opposite gate dependence was found in n-type channel [1,2]. Therefore, the combined device of p- and n-type channel spin transistor would be a good candidate for the complimentary logic device.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1993.11a
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• pp.29-34
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• 1993

In this paper, we used one-dimensional process simulator, SUPREM-II, and two-dimensional device simulator, MINIMOS 4.0 to extract optimal process parameter that can minimize degradation of device characteristics caused by process parameter variation in the case of short channel nMOSFET and pMOSFET device. From this simulation, we have derieved the relationship between process parameter and device characteristics. Here we have presented a method to extract process parameters from design trend curve(DTC) obtained by process and device simulations. We parameters to verify the validity of the DTC method. The experimental result of 0.8 $\mu\textrm{m}$ channel length devices that have been fabricated with optimal that reduces short channel effects, that is, good drain current-voltage characteristics, low body effects and threshold voltage of 1.0 V, high punchthrough and breakdown voltage of 12 V, low subthreshold swing(S.S) values of 105 mV/decade.

• Electrical & Electronic Materials
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• v.9 no.8
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• pp.799-805
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• 1996

In short channel MOSFET, it is very important to establish optimal process conditions because of variation of device characteristics due to the process parameters. In this paper, we used process simulator and device characteristics caused by process parameter variation. From this simulation, it has been ' derived to the dependence relations between process parameters and device characteristics. The experimental result of fabricated short channel device according to the optimal process parameters demonstrate good device characteristics.