• Title/Summary/Keyword: Channel modeling

Search Result 755, Processing Time 0.027 seconds

A Study on the Analytical Model for Grooved Gate MOSFET (Grooved Gate MOSFET의 해석적 모델에 관한 연구)

  • 김생환;이창진;홍신남
    • Proceedings of the Korean Institute of Communication Sciences Conference
    • /
    • 1991.10a
    • /
    • pp.205-209
    • /
    • 1991
  • The conventional modeling equations for planar MOSFET can not be directly used for zero or minus junction depth concave MOSFET. In this paper, we suggest a new model which can simulate the electrical characteristics of concave MOSFET. The threshold voltage modeling was achieved using the charge sharing method considering the relative difference of source and drain depletion widths. To analyze the ID-VDS characteristics, the conventional expressions for planar MOSFET were employed with the electrical channel length as an effective channel length and the channel length modulation factor as ${\alpha}$ΔL. By comparing the proposed model with experimental results, we could get reasonably similar curves and we proposed a concave MOSFET conditiion which shows no short channel effect of threshold voltage(V${\gamma}$).

Analysis of Channel Modeling and High Speed Data Transmission Channels for Broadband Power-Line Communication (광대역 전력선통신을 위한 채널모델링과 고속데이터 전송특성분석)

  • Rhee, Young-Chul
    • Journal of the Korea Institute of Information and Communication Engineering
    • /
    • v.11 no.10
    • /
    • pp.1821-1827
    • /
    • 2007
  • In this paper, an analytic transfer channel modeling function by impulse signal propagation effects in indoor power-line network are analysed. The modeled channel parameters of power line channel including background noise is applied to the OFDM system and we analysis BER for QPSK and 16-QAM modulation signals with simulation. By the representation of gain for OFDM modulation, we can estimate the characteristic parameters of OFDM in Broadband power line communication.

Modeling and Characterization of Low Voltage Access Network for Narrowband Powerline Communications

  • Masood, Bilal;Haider, Arsalan;Baig, Sobia
    • Journal of Electrical Engineering and Technology
    • /
    • v.12 no.1
    • /
    • pp.443-450
    • /
    • 2017
  • Nowadays, Power Line Communication (PLC) is gaining high attention from industry and electric supply companies for the services like demand response, demand side management and Advanced Metering Infrastructure (AMI). The reliable services to consumers using PLC can be provided by utilizing an efficient PLC channel for which sophisticated channel modeling is very important. This paper presents characterization of a Low Voltage (LV) access network for Narrowband Power Line Communications (NB-PLC) using transmission line (TL) theory and a Simulink model. The TL theory analysis not only includes the constant parameters but frequency selectivity is also introduced in these parameters such as resistance, conductance and impedances. However, the proposed Simulink channel model offers an analysis and characterization of capacitive coupler, network impedance and channel transfer function for NB-PLC. Analysis of analytical and simulated results shows a close agreement of the channel transfer function. In the absence of a standardized NBPLC channel model, this research work can prove significant in improving the efficiency and accuracy of NB-PLC communication transceivers for Smart Grid communications.

Measurement of the indoor power line channel characteristic (옥내 전력선 통신 채널 특성 측정)

  • Heo, Yun-Seok
    • The Journal of Information Technology
    • /
    • v.7 no.3
    • /
    • pp.1-10
    • /
    • 2004
  • Considerable efforts has been recently devoted to the determination of accurate channel models for the Power Line environment, both for the indoor and outdoor cases. The common denominator and limitation of the known and previously published models is the particular type of approach followed. In this paper is concerned with a power line channel modeling for the more fast and efficiently power line communication experiment. A capacitor load channel simulator is a essential equipment in the power line modem development for indoor network. We accomplished a channel modelling by the frequency response method about the total 224 capacitor load cases. On the basis of this measurement modeling it is here revealed that the PLC is a more deterministic media that commonly believed.

  • PDF

Adjacent Interference Analysis between M-WiMAX OFDMA/TDD and WCDMA FDD System in the 2.6 GHz Band Part II : Adjacent Interference Analysis with Smart Antenna in M-WiMAX System (2.6 GHz 대역에서 M-WiMAX OFDMA/TDD 시스템과 WCDMA FDD 시스템간의 상호 간섭 분석 Part II : Adjacent Interference Analysis with Smart Antenna in M-WiMAX System)

  • Wang, Yu-Peng;Ko, Sang-Jun;Chang, Kyung-Hi
    • The Journal of Korean Institute of Communications and Information Sciences
    • /
    • v.32 no.6A
    • /
    • pp.588-599
    • /
    • 2007
  • This paper presents the coexistence issues between M-WiMAX TDD and WCDMA FDD systems. To improve the M-WiMAX system performance and to reduce the adjacent channel interference to WCDMA FDD system, transmit and receive beamforming techniques are applied in the base stations of M-WiMAX system. Furthermore, we propose an adjacent channel interference modeling methodology, which captures the effect of transmit beamforming on the adjacent channel interference. Besides, we verify the performance improvement in the uplink of WCDMA system due to the transmit beamforming in M-WiMAX downlink based on the proposed adjacent channel interference modeling methodology. We also verify the performance enhancement due to the receive beamforming in the uplink of M-WiMAX system through system level Monte Carlo simulations, considering random user position, the effect of shadowing and multi-path fading channel. Discussions on the gain of applying transmit and receive beamforming in M-WiMAX system comparing the case of SISO system are also included. Furthermore, we present the performance of cosited M-WiMAX and WCDMA systems, considering commercial deployment, additional channel filter at base stations and the effects of TxBF and RxBF.

The Verification of Channel Potential using SPICE in 3D NAND Flash Memory (SPICE를 사용한 3D NAND Flash Memory의 Channel Potential 검증)

  • Kim, Hyunju;Kang, Myounggon
    • Journal of IKEEE
    • /
    • v.25 no.4
    • /
    • pp.778-781
    • /
    • 2021
  • In this paper, we propose the 16-layer 3D NAND Flash memory compact modeling using SPICE. In the same structure and simulation conditions, the channel potential about Down Coupling Phenomenon(DCP) and Natural Local Self Boosting (NLSB) were simulated and analyzed with Technology Computer Aided Design(TCAD) tool Atlas(SilvacoTM) and SPICE, respectively. As a result, it was confirmed that the channel potential of TCAD and SPICE for the two phenomena were almost same. The SPICE can be checked the device structure intuitively by using netlist. Also, its simulation time is shorter than TCAD. Therefore, using SPICE can be expected to efficient research on 3D NAND Flash memory.

Modeling of the Inter-Page Interference on the Holographic Data Storage Systems (홀로그래픽 저장장치에서 인접 페이지 간 간섭 모델링)

  • Park, Dong-Hyuk;Lee, Jae-Jin
    • The Journal of Korean Institute of Communications and Information Sciences
    • /
    • v.35 no.7C
    • /
    • pp.581-586
    • /
    • 2010
  • The holographic data storage system stores multiple data pages by multiplexing. But the inter-page interference(IPI) caused by multiplexing reduces the intensity of the hologram. The simulation of the holographic storage systems has to consider the IPI. Therefore, we introduce a channel modeling that takes care of inter-page interference in the holographic data storage system. We simulate the performance of PRML detection on the hologrpahic data storage system with IPI modeling.

A Study on Constitution of Underwater Acoustic Communication Channel using TLM Modeling (TLM 모델링을 이용한 수중 음향 통신 채널 구현에 관한 연구)

  • Park, Kyu-Chil;Park, Jin-Nam
    • Proceedings of the IEEK Conference
    • /
    • 2007.07a
    • /
    • pp.421-422
    • /
    • 2007
  • In underwater, acoustic waves are used for telecommunication. The communication channels are very complicated, because of the distribution of temperature in depth, reflections from boundaries like as the surface of water and the bottom. We report the constitution of the underwater acoustic channel using the simulation of the Transmission Line Matrix Modeling and cross-correlations from the input and output signals.

  • PDF

Discrete-time approximation and modeling of a broadband underwater propagation channel based on eigenray analysis (고유 음선 분석에 기반한 광대역 수중음향 전달 채널의 이산시간 근사 및 모의 방법 연구)

  • Shin, Donghoon;Cho, Hyeon-Deok;Kwon, Taekik;Ahn, Jae-Kyun
    • The Journal of the Acoustical Society of Korea
    • /
    • v.39 no.3
    • /
    • pp.216-225
    • /
    • 2020
  • In this paper, broadband underwater propagation channel modeling based on eigenray analysis is discussed. Underwater channels are often formulated in frequency domain time-harmonic signals, which are impractical for simulating broadband signals in time domain. In this regard, time domain modeling of the underwater propagation channel is required for the simulation of broadband signals, for which the eigenray analysis based on ray tracing, resulting in multipath propagation delays in time-domain, is used in this paper. For discrete time system application, the phase, frequency-dependent loss and non-integer sample delays for each eigenray, are approximated by the finite impulse response of the broadband propagation channel.

Quantum-Mechanical Modeling and Simulation of Center-Channel Double-Gate MOSFET (중앙-채널 이중게이트 MOSFET의 양자역학적 모델링 및 시뮬레이션 연구)

  • Kim, Ki-Dong;Won, Tae-Young
    • Journal of the Institute of Electronics Engineers of Korea SD
    • /
    • v.42 no.7 s.337
    • /
    • pp.5-12
    • /
    • 2005
  • The device performance of nano-scale center-channel (CC) double-gate (DG) MOSFET structure was investigated by numerically solving coupled Schr$\"{o}$dinger-Poisson and current continuity equations in a self-consistent manner. The CC operation and corresponding enhancement of current drive and transconductance of CC-NMOS are confirmed by comparing with the results of DG-NMOS which are performed under the condition of 10-80 nm gate length. Device optimization was theoretically performed in order to minimize the short-channel effects in terms of subthreshold swing, threshold voltage roll-off, and drain-induced barrier lowering. The simulation results indicate that DG-MOSFET structure including CC-NMOS is a promising candidates and quantum-mechanical modeling and simulation calculating the coupled Schr$\"{o}$dinger-Poisson and current continuity equations self-consistently are necessary for the application to sub-40 nm MOSFET technology.