• Transactions of the Korean Society of Mechanical Engineers
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• v.17 no.2
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• pp.438-444
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• 1993

The circuit board of an electronic equipment were simulated with a vertical channel which had thermal blocks protruded from one of the channel walls. A rought front plate was made of a circuit board attached with short wires to simulate the back side of a printed circuit board. Natural convection experiments were carried out to study the effects of channel space and rough front plate and to find the suitable characteristic value after the fourth row. The effect of a rough front plate was negligble. There were negligible effects of the channel space on the first and second heaters. Heat transfer coefficients after the third row decreased as the channel space decreased. Heat transfer coefficients were almost constant for larger than 20 mm channel space. A characteristic length was suggested to non-dimensionalize Nu and Ra numbers in a vertical channel with protruded heaters. A correlation was obtained using the new characteristic lengths.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.133-133
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• 2008

Recently, as the down-scailing of field-effect transistor devices continues, Schottky-barrier field-effect transistors (SB-FETs) have attracted much attention as an alternative to conventional MOSFETs. SB-FETs have advantages over conventional devices, such as low parasitic source/drain resistance due to their metallic characteristics, low temperature processing for source/drain formation and physical scalability to the sub-10nm regime. The good scalability of SB-FETs is due to their metallic characteristics of source/drain, which leads to the low resistance and the atomically abrupt junctions at metal (silicide)-silicon interface. Nevertheless, some reports show that SB-FETs suffer from short channel effect (SCE) that would cause severe problems in the sub 20nm regime.[Ouyang et al. IEEE Trans. Electron Devices 53, 8, 1732 (2007)] Because source/drain barriers induce a depletion region, it is possible that the barriers are overlapped in short channel SB-FETs. In order to analyze the SCE of SB-FETs, we carried out systematic studies on the Schottky barrier overlapping in short channel SB-FETs using a SILVACO ATLAS numerical simulator. We have investigated the variation of surface channel band profiles depending on the doping, barrier height and the effective channel length using 2D simulation. Because the source/drain depletion regions start to be overlapped each other in the condition of the $L_{ch}$~80nm with $N_D{\sim}1\times10^{18}cm^{-3}$ and $\phi_{Bn}$ $\approx$ 0.6eV, the band profile varies as the decrease of effective channel length $L_{ch}$. With the $L_{ch}$~80nm as a starting point, the built-in potential of source/drain schottky contacts gradually decreases as the decrease of $L_{ch}$, then the conduction and valence band edges are consequently flattened at $L_{ch}$~5nm. These results may allow us to understand the performance related interdependent parameters in nanoscale SB-FETs such as channel length, the barrier height and channel doping.

• Transactions of the Korean Society of Mechanical Engineers
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• v.15 no.1
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• pp.308-322
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• 1991

A set of experiments of Counter-Current Flow Limit(CCFL or Flooding) was performed to improve the drawbacks of Wallis' Correlation which neglects the effects of channel size, channel length, injection method and the boundary conditions at the inlet of liquid and gas phase. In these experiments using water and air, the followings were found ; (i) The effects of channel size and length were quite significant. In large tubes(D>20mm), the flooding front occurred at the bottom of the channel and when the gas flow increased the front moved upward ; however, in small tubes(D<20mm), there were no upward movement of flooding front and the flooding just occurred at the liquid inlet. (ii) The effect of water inlet device was not as significant as that of channel length though the inlet boundary conditions could affect the flow development and flooding afterward. (iii) Once the flooding front reached the inlet of water injection device, an newly reduced flow condition was set up and resulted in another flooding corresponding to the new condition.

• Journal of Korean Society of Transportation
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• v.8 no.1
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• pp.5-15
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• 1990

As a result of the lack of methodology for the determination of navigational channel capacity and the consequence lack of effective management of traffic, navigational channels are often grossly underutilized or highly congested. The traditional rule of first-come-first-served admission of vessels to channels is not efficient as it assumes equal time intervals between entrance of consecutive vessels. A new vessel traffic management system is developed in this research and methodologies to measure the improvement in the channel capacity are developed. Methodology to measure the channel performances for three queue disciplines are developed. The effects of changes in major factors on the channel capacity model such as channel length, fleet mix and arrival rate, as well as changes in strategy are analyzed. Under given channel conditions, best strategy are recommended. Also, a method for effective stochastic channel capacity simulation was developed. The results of analysis and as ertions are compared with the results of simulation runs to prove their applicability.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2000.05a
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• pp.222-225
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• 2000

In this paper, a synchronous CDMA system accepted for the cdma2000 standard is simulated to propose optimized reverse link power ratio and channel estimation lengths. Differently from IS-95, the pilot channel is used in the proposed system to estimate fading channel, so optimized estimation lengths are needed. Therefore, in this paper we analyze optimized estimation lengths which is needed to decide the power ratio of pilot channel and fundamental channel. From fixed estimation lengths, we calculate FER with various power ratio values.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.62 no.12
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• pp.1755-1757
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• 2013

Dynamically exploiting unused-spectrum, cognitive radio has been proposed to solve spectrum utilization problem. In cognitive radio, it is important to minimize the interference to primary service as well as to provide efficient channel allocation. In this paper, we propose a multi-channel allocation scheme based on spectrum hole prediction. Proposed scheme considered both interference length and channel capacity to limit the interference to primary user as well as to enhance system performance. Simulation results show the proposed scheme improves the system throughput.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.05a
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• pp.86-90
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• 1992

We have studied the characteristics of n-and p-channel FETs with submicron channel length fabricated by twin-well process. Threshold voltage variation and potential distribution with channel ion implantation conditions and impurity profile of n-and p-channel region wee simulated using SUPREM-II and MINIMOS 4.0 simulater, P-channel FET had buried-channel in the depth of 0.15 $\mu\textrm{m}$ from surface by counter-doped boron ion implantation for threshold voltage adjustment. As a result of device measurement, we have obtained good drain saturation characteristics for 3.3 [V] opreation, minimized short channel effect with threshold voltage shift below 0.2[V], high punchthrough and breakdown voltage above 10[V] and low subthreshold value.

• Journal of the Korean Institute of Telematics and Electronics
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• v.11 no.4
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• pp.9-16
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• 1974

The low channels with frequency range of 54~88MHz and the high channels with frequency range if 174~216 MHz are in use for TV broadcasting in Korea. Since the ratio of the highest frequency to the lowest frequency is 4 to 1, only a logarithmic periodic antenna cou1d cover such an wide frequency range. But, this log-periodic antenna should be big in size. Studies have been done on an antenna of small size with reasonable gain which combines through a channel filter a LPD antenna if low channel with boom length of 2m and a LPD antenna of high channel with boom length of 1.8m. The whole antenna is connected to feeder line through a talun. Experiment shows that the gain of low and high channels is 7 dB and 9 dB respectively, which are lower than theoretical values br nomore than ldB. The difference seemed to come from slight impedance mismatches between antennas and feeder lines, loss in the filter and measurement errors.

• Proceedings of the Korea Water Resources Association Conference
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• 2006.05a
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• pp.1474-1478
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• 2006

본 연구에서는 여러 기상지수들과 우리나라 기온, 강수량에 대해서 Multi-Channel Singular Spectrum Analysis(MSSA)를 실시함으로써 상호영향에 따른 주성분을 분석하였다. Window length가 150일 때 SOI 등의 기상지수와 기온, 강수량의 MSSA를 실시하였으며 이 때 각각의 eigenvalue는 전체 공분산에 대한 각 요소의 비율을 설명한다. Window length는 Vautard 등(1992)이 제시한 $N/5{\sim}N/3$의 값을 사용하였다. 기상요소들과 기온, 강수량의 MSSA를 이용한 기후변화에 따른 국내 수문변수의 변화 상관분석은 기온과 각 기상요소들과의 분석결과에 비해 강수와 각 기상요소들의 분석결과가 기상요소들에 대한 주기패턴을 잘 따르지 못하고 약한 진폭을 나타내며 특히 SOI와 Rainfall의 경우 첫 번째 주성분에서의 상관분석결과 3개월 지체 시 상관계수 0.8410의 상관성이 높은 장주기 변화 쌍을 가짐에도 불구하고 자료의 변화도에 대하여 각 요소가 설명하는 비중이 매우 낮았다.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.8
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• pp.78-88
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• 1992

To improve the characteristics of sub$\mu$m short channel MOSFET device, a new device having the convex structure is proposed. This device has 3-dimensionally expandable channel length according to the vertical etched silicon height. For the purpose of comparing the DC and AC characteristics, planar device is also fabricated. Comparing the channel length, the convex device with 0.4$\mu$m silicon height is larger about 0.56$\mu$m in NMOS and 0.78$\mu$m in PMOS than planar devices. DC characteristics, such as threshold voltage, operational current, substrate current and breakdown voltage are compared together with AC characteristics using the ring oscillator inverter delay. Also process and device simulation are performed and the differences between convex and pranaldevice are also compared.