• ETRI Journal
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• 제25권5호
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• pp.379-386
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• 2003

This paper presents the design of a narrow-band channel filter and its group-delay equalizer for a Ka-band satellite transponder. We used an 8th order channel filter for high selectivity with an elliptic-integral function response and an inline configuration. We designed a 2-pole, reflection-type, group-delay equalizer to compensate for the steep variation of the group-delay at the output of the channel filter, keeping the thermal stability at ${\pm}7$ ns of group-delay variation at the band edges over 15-55$^{\circ}C$. We devised a new tuning technique using short-ended dummy cavities and used it for tuning both the filter and equalizer; this removes the necessity of additional tuning after the cavities are assembled. Through measurement, we demonstrate that the group-delay-equalized filter meets the equipment requirements and is appropriate for satellite input multiplexers.

• International Journal of Internet, Broadcasting and Communication
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• 제15권3호
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• pp.43-51
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• 2023

Slotted ALOHA (S-ALOHA) is a classical medium access control protocol widely used in multiple access communication networks, supporting distributed random access without the need for a central controller. Although stability and delay have been extensively studied in existing works, most of these studies have assumed ideal channel conditions or independent fading, and the impact of time-correlated wireless channels has been less addressed. In this paper, we investigate the queueing delay performance in S-ALOHA networks under time-correlated channel conditions by utilizing a Gilbert-Elliott model. Through simulation studies, we demonstrate how temporal correlation in the wireless channel affects the queueing delay performance. We find that stronger temporal correlation leads to increased variability in queue length, a larger probability of having queue overflows, and higher congestion levels in the S-ALOHA network. Consequently, there is an increase in the average queueing delay, even under a light traffic load. With these findings, we provide valuable insights into the queueing delay performance of S-ALOHA networks, supplementing the existing understanding of delay in S-ALOHA networks.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
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• pp.1065-1070
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• 2007

The effects of hot carriers and self-heating on the electrical stability of p-channel TFTs have been analysed combining experimental data and numerical simulations. While hot carrier effects were shown not to induce appreciable degradation, self-heating related instability was found to more seriously affect the device characteristics. New models have been developed to explain the reported results.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.199-199
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• 2011

Recently, Thin film transistors (TFTs) with amorphous oxide semiconductors (AOSs) can offer an important aspect for next generation displays with high mobility. Several oxide semiconductor such as ZnO, $SnO_2$ and InGaZnO have been extensively researched. Especially, as a well-known binary metal oxide, tin oxide ($SnO_2$), usually acts as n-type semiconductor with a wide band gap of 3.6eV. Over the past several decades intensive research activities have been conducted on $SnO_2$ in the bulk, thin film and nanostructure forms due to its interesting electrical properties making it a promising material for applications in solar cells, flat panel displays, and light emitting devices. But, its application to the active channel of TFTs have been limited due to the difficulties in controlling the electron density and n-type of operation with depletion mode. In this study, we fabricated staggered bottom-gate structure $SnO_2$-TFTs and patterned channel layer used a shadow mask. Then we compare to the performance intrinsic $SnO_2$-TFTs and doping hafnium $SnO_2$-TFTs. As a result, we suggest that can be control the defect formation of $SnO_2$-TFTs by doping hafnium. The hafnium element into the $SnO_2$ thin-films maybe acts to control the carrier concentration by suppressing carrier generation via oxygen vacancy formation. Furthermore, it can be also control the mobility. And bias stability of $SnO_2$-TFTs is improvement using doping hafnium. Enhancement of device stability was attributed to the reduced defect in channel layer or interface. In order to verify this effect, we employed to measure activation energy that can be explained by the thermal activation process of the subthreshold drain current.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제48권9호
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• pp.623-627
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• 1999

We report a new in-situ fluorine passivation method without in implantation by employing excimer laser annealing of $SiO_{x}F_{y}$/a-Si structure and its effects on p-channel poly-Si TFTs. The proposed method doesn't require any additional annealing step and is a low temperature process because fluorine passivation is simultaneous with excimer-laser-induced crystallization. A in-situ fluorine passivation by the proposed method was verified form XPS analysis and conductivity measurement. From experimental results, it has been shown that the proposed method is effective to improve the electrical characteristics, specially field-effect mobility, and the electrical stability of p-channel poly-Si TFTs. The improvement id due to fluorine passivation, which reduces the trap state density and forms the strong Si-F bonds in poly-Si channel and $SiO_2/poly-Si$ interface. From these results, the high performance poly-Si TFTs canbe obtained by employing the excimer-laser-induced fluorine passivation method.

• 대한토목학회논문집
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• 제33권3호
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• pp.987-995
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• 2013

본 연구의 목적은 국내 하천 복원의 자연친화적인 설계를 위한 무독성 호안공법의 수리적 안정성을 검토하는 것이다. 최근 들어 공학적 효율 위주의 치수 기능만을 위한 하천관리 정책에서 벗어나 하천의 환경적 기능의 개선을 위한 생태하천 복원사업이 이루어지고 있다. 그러나 신규 호안공법에 대한 부적절한 수리학적 설계기준이 자주 홍수기 경제적 손실을 유발하고 있다. 사석 및 블록의 안정성에 관한 연구는 크게 하천에서 제방, 하상보호, 세굴방지 등의 목적과 바다에서 호안 또는 방조제의 축조에 따라 투하하는 사석의 안정성에 기초를 둔 연구가 대부분이며 경험식으로 이루어져 있다. 본 연구에서는 최고 유속 3.5 m/s인 고속수로를 제작하여 수리실험을 수행하였으며, 무독성 접착제를 이용한 블록공법에 대한 다양한 조건의 수리실험을 통해서 수리적 안정성을 위한 호안블록의 한계유속을 구하였다.

• 한국추진공학회지
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• 제9권4호
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• pp.39-47
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• 2005

재생냉각형 액체로켓 연소기 챔버 냉각 채널부의 상온상태의 구조해석과 검증시험을 수행하였다. 재생냉각 연소기 냉각 채널부에 사용하는 구리 합금의 상온 인장시험을 수행하여 재료의 탄소성 물성 값을 확보하였으며 냉각 채널의 탄-소성해석은 이 물성 값을 이용하여 수행하였다. 해석결과의 검증을 위해서 평판형태의 냉각채널 시편을 제작하여 강도시험을 수행하였다. 탄-소성 구조해석 결과와 시편의 수압시험 결과 사이에 약간의 차이는 있지만 비교적 잘 일치하였으며 채널의 단면 두께가 작기 때문에 제작상의 가공오차가 채널의 구조적인 안정성에 큰 영향을 미치는 것을 확인하였다.

• 한국수자원학회:학술대회논문집
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• 한국수자원학회 2004년도 학술발표회
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• pp.957-960
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• 2004

From a water-environmental point of view, with a change of understanding and concern about vegetation, it changes that vegetation acts as stability of channel and bed, providing habitats and feed for fauna, and means improving those with appreciation of the beautiful but resistant factor to the flow So, it becomes important concern and study subjects that turbulent structure by vegetation, shear stress and transport as well as roughness and average velocity by vegetation. But from a hydraulic point of view, vegetation causes resistance to the flow and can increase the risk of flooding, Therefore, this thesis concern the flow characteristics in vegetated open channels. According to the experimental results, $z_0$ was on an average $0.4h_p$ in a vegetated open channel. So, the elevation corresponding to zero velocity in a vegetated channel was the middle of roughness element. The limit for logarithmically distributed profile over the roughness element was from $z_0$ to $0.80h_{over}$ for a vegetated channel. Among the existing theory, the method of Kouwen et al.(1969), Haber(1982), and El-Hakim and Salama(1992) except Stephan(2001) gave a very good value compared to the measured velocity profile.

• ETRI Journal
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• 제31권6호
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• pp.653-659
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• 2009

We have investigated the channel protection layer (PL) effect on the performance of an oxide thin film transistor (TFT) with a staggered top gate ZnO TFT and Al-doped zinc tin oxide (AZTO) TFT. Deposition of an ultra-thin PL on oxide semiconductor films enables TFTs to behave well by protecting the channel from a photo-resist (PR) stripper which removes the depleted surface of the active layer and increases the carrier amount in the channel. In addition, adopting a PL prevents channel contamination from the organic PR and results in high mobility and small subthreshold swings. The PL process plays a critical role in the performance of oxide TFTs. When a plasma process is introduced on the surface of an active layer during the PL process, and as the plasma power is increased, the TFT characteristics degrade, resulting in lower mobility and higher threshold voltage. Therefore, it is very important to form an interface using a minimized plasma process.

• 한국수자원학회논문집
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• 제48권12호
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• pp.1077-1087
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• 2015

제방은 홍수가 발생했을 때 하천의 범람을 막아 제내지의 인명, 가옥, 재산 등을 보호하는 중요한 기능을 하는 하천구조물이다. 제방의 붕괴원인은 크게 월류에 의한 붕괴, 침투에 의한 붕괴, 침식에 의한 붕괴로 분류되며, 침식에 의한 붕괴를 방지하기 위하여 호안을 설치한다. 따라서, 이러한 호안의 안정성은 제방 전체의 안정성과 직결되는 중요한 요소이다. 특히, 흐름의 강도가 증가하는 만곡부와 같은 수충부에서는 호안의 안정성이 급격히 저하되므로 이에 대한 연구가 필요한 실정이다. 따라서, 본 연구에서는 경질성 호안의 수리실험을 통해 만곡수로에 설치된 호안의 취약지점을 파악하였으며 주요 지점의 유속과 수위를 측정하였다. 또한, 동일한 조건으로 3차원 수치해석을 수행하여 실험에서 계측장비의 한계로 확인하기 어려운 흐름특성을 분석하였다. 그 결과 제방사면의 전단응력이 크게 산정된 부분과 사석호안이 붕괴된 위치가 거의 일치하는 것으로 나타났으며 전단응력은 작으나 붕괴가 발생한 지점에서는 만곡의 영향으로 발생한 2차류에 의해 순환흐름이 발생되어 호안의 붕괴를 유발하는 것으로 나타났다. 기존의 사석산정공식을 이용하여 사석호안의 규모를 결정하였으며 하도의 평균유속보다 국부적인 최대유속으로 산정하였을 때, 1.5~4.7배 크게 산정되었다. 본 연구를 통해 만곡수로에서는 직선수로에서와는 사석의 규모를 산정하는 방법을 달리해야하는 것을 알 수 있었으며, 추후 곡률반경 및 구조물에 대한 영향을 고려하고 대표형상에 대한 가중치를 부여 할 수 있으면 보다 합리적이고 정확한 호안사석의 규모를 결정할 수 있을 것으로 예상된다.