• Title/Summary/Keyword: Channel Profile

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Control of Short-Channel Effects in Nano DG MOSFET Using Gaussian-Channel Doping Profile

  • Charmi, Morteza
    • Transactions on Electrical and Electronic Materials
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    • v.17 no.5
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    • pp.270-274
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    • 2016
  • This article investigates the use of the Gaussian-channel doping profile for the control of the short-channel effects in the double-gate MOSFET whereby a two-dimensional (2D) quantum simulation was used. The simulations were completed through a self-consistent solving of the 2D Poisson equation and the Schrodinger equation within the non-equilibrium Green’s function (NEGF) formalism. The impacts of the p-type-channel Gaussian-doping profile parameters such as the peak doping concentration and the straggle parameter were studied in terms of the drain current, on-current, off-current, sub-threshold swing (SS), and drain-induced barrier lowering (DIBL). The simulation results show that the short-channel effects were improved in correspondence with incremental changes of the straggle parameter and the peak doping concentration.

Analysis of Doping Profile Dependent Threshold Voltage for DGMOSFET Using Gaussian Function

  • Jung, Hak-Kee
    • Journal of information and communication convergence engineering
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    • v.9 no.3
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    • pp.310-314
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    • 2011
  • This paper has presented doping profile dependent threshold voltage for DGMOSFET using analytical transport model based on Gaussian function. Two dimensional analytical transport model has been derived from Poisson's equation for symmetrical Double Gate MOSFETs(DGMOSFETs). Threshold voltage roll-off is very important short channel effects(SCEs) for nano structures since it determines turn on/off of MOSFETs. Threshold voltage has to be constant with decrease of channel length, but it shows roll-off due to SCEs. This analytical transport model is used to obtain the dependence of threshold voltage on channel doping profile for DGMOSFET profiles. Also we have analyzed threshold voltage for structure of channel such as channel length and gate oxide thickness.

Analytical Threshold Voltage Model of Ion-Implanted MOSFET (이온 주입된 Mosfet의 문턱 전압의 해석적 모델)

  • Lee, Hyo-Sik;Jin, Ju-Hyeon;Gyeong, Jong-Min
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.22 no.6
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    • pp.58-62
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    • 1985
  • Analytical threshold voltage model of small size ion-implanted MOSFET's is proposed. Yau's model which is only applicable to MOSFET's with constant doping concentration was modified to handle the MOSFET's with nonuniform channel doping concentration and bird's beak, whereby the short and narrow-channel effect was quantitively described. Threshold voltage model for short-channel MOSFET's was derived by approximating the SUPREM result of channel impurity profile to a 2-step profile, and the narrow width be-haviour was successfully described using thr'weighting factor'to accommodate the doping profile in the bird's beak region.

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Relation of Conduction Path and Subthreshold Swing for Doping Profile of Asymmetric Double Gate MOSFET (비대칭 DGMOSFET의 도핑분포함수에 따른 전도중심과 문턱전압이하 스윙의 관계)

  • Jung, Hakkee
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.18 no.8
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    • pp.1925-1930
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    • 2014
  • This paper has analyzed the relation of conduction path and subthreshold swing for doping profile in channel of asymmetric double gate(DG) MOSFET. Since the channel size of asymmetric DGMOSFET is greatly small and number of impurity is few, the high doping channel is analyzed. The analytical potential distribution is derived from Possion's equation, and Gaussian distribution function is used as doping profile. The conduction path and subthreshold swing are derived from this analytical potential distribution, and those are investigated for variables of doping profile, projected range and standard projected deviation, according to the change of channel length and thickness. As a result, subthreshold swing is reduced when conduction path is approaching to top gate, and that is increased with a decrease of channel length and a increase of channel thickness due to short channel effects.

An Experimental Study on Velocity Profile in a Vegetated Channel (식생수로의 유속분포에 관한 실험적 연구)

  • Kwon, Do Hyun;Park, Sung Sik;Baek, Kyung Won;Song, Jai Woo
    • Proceedings of the Korea Water Resources Association Conference
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    • 2004.05b
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    • pp.957-960
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    • 2004
  • From a water-environmental point of view, with a change of understanding and concern about vegetation, it changes that vegetation acts as stability of channel and bed, providing habitats and feed for fauna, and means improving those with appreciation of the beautiful but resistant factor to the flow So, it becomes important concern and study subjects that turbulent structure by vegetation, shear stress and transport as well as roughness and average velocity by vegetation. But from a hydraulic point of view, vegetation causes resistance to the flow and can increase the risk of flooding, Therefore, this thesis concern the flow characteristics in vegetated open channels. According to the experimental results, $z_0$ was on an average $0.4h_p$ in a vegetated open channel. So, the elevation corresponding to zero velocity in a vegetated channel was the middle of roughness element. The limit for logarithmically distributed profile over the roughness element was from $z_0$ to $0.80h_{over}$ for a vegetated channel. Among the existing theory, the method of Kouwen et al.(1969), Haber(1982), and El-Hakim and Salama(1992) except Stephan(2001) gave a very good value compared to the measured velocity profile.

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Aeronautical to Ground Channel Modeling for Common Data Link (공용데이터링크를 위한 공대지 채널 모델링)

  • Park, Hongseok;Shim, Jae-Nam;Kim, Donghyun;Kim, Dong Ku
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.41 no.12
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    • pp.1876-1883
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    • 2016
  • The new channel model for high data rate common data link(CDL) is proposed. The Two-ray channel, which is composed of the reflected signals on the front ground of the receiver, is considered in this paper. This channel arises due to the curvature of the earth when the altitude of the transmitter is tens of kilometers and distance between the transmitter and the receiver is hundreds of kilometers. The Two-ray channel is modeled by estimating the maximum delay profile and the power delay profile, depending on the transmitting and receiving beamforming angle and the radiation pattern of antenna. The power delay profile has a larger effect on the bit error rate(BER) over signal to noise ratio(SNR) than the maximum delay profile, because the distance range is too long in the proposed channel model.

Analysis and Utilization of the Power Delay Profile Characteristics of Dispersive Fading Channels (시간 지연을 갖는 페이딩 채널의 전력 지연 분포 특성 분석 및 활용)

  • Park, Jong-Hyun;Kim, Jae-Won;Song, Eui-Seok;Sung, Won-Jin
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.32 no.8C
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    • pp.681-688
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    • 2007
  • Applying an appropriate received signal processing algorithm based on the channel characteristics is important to improve the receiver performance. Wireless channels in general exhibit various time-delay characteristics depending on their power delay profile. When the estimated channel power summation is used to determine the amount of time delay, a channel adaptive receiver structure can be implemented. In this paper, we derive a closed-form expression for the error probability of the channel classification when the estimated channel power summation is used to classify channel groups having different time delay characteristics, and present the performance gain utilizing multiple estimation results.

A Study on the Relation of Doping Profile and Threshold voltage in the Ion-Implanted E-IGFET(I) (Ion-Implanted E-IGFET의 Doping Profile과 Threshold 전압과의 관계에 관한 연구(I))

  • Son, Sang-Hui;O, Eung-Gi;Gwak, Gye-Dal
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.21 no.4
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    • pp.58-64
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    • 1984
  • A simple model for the impurity profile in an ion-implanted channel layer of an enhancement type IGFET is assumed and a simple expression for the threshold voltage derived by using the assumed impurity profile is analyzed in detail. Also, this simple model is applied to simulating the substrate bias dependence of its threshold voltage. Excellent agreement is obtained between theory and experiment on n-channel devices. The error range of threshold voltage between gaussian-profile and box-profile is calculated in this paper and a new method of calculating the depth of ion-implanted Baler D is also introduced.

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An Efficient Channel Sounding Method for WPAN System (무선 PAN 시스템을 위한 효율적인 채널 사운딩 기법)

  • Cho, Ju-Phil
    • The Journal of the Institute of Internet, Broadcasting and Communication
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    • v.8 no.3
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    • pp.9-14
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    • 2008
  • In this paper, we propose the channel sounding scheme which is made for ideal communication between some application as well as the short distance of high speed data transmission in MIMO-OFDM system for Wireless PAN. This method is able to perceive the duration of the impulse response through the delaying of power delay profile, modeled a power delay profile which has an attenuate characteristic, and obtained the coefficient of channel response by ML (maximum likelihood). Through the amplitudes, phases and delays associated with each multipath component which were acquired from this channel sounding scheme, we can describe the wave propagation characteristics of channels between the transmitter and receiver so that the receiver could enhance not only the reliability but also the ability of communication link.

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A Study of VLC Channel Modeling using user Location Environment (사용자 위치 기반의 VLC 채널 모델 도출에 관한 연구)

  • Lee, Jung-Hoon;Cha, Jae-Sang
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.36 no.10B
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    • pp.1240-1245
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    • 2011
  • In this paper, channel modeling and analysis of wireless visible light communication(VLC) were studied in indoor circumstance. Photons emitted from LED straightly moved and navigated within indoor, after that a part of photons reached on PD via LOS(Line Of Sight) or NLOS(None Line Of Sight). These received signals had characteristics of delay profile and attenuation, which was multiple-path fading. In this paper, computer simulation of VLC channel was executed under the condition that two LEDs were used for transmitter and three PDs were located at different positions of the 20*8*2.3m sized indoor. BER performance simulation was excuted based on the characteristics of each VLC channel.