• JSTS:Journal of Semiconductor Technology and Science
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• 제14권5호
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• pp.537-542
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• 2014

The three-dimensional (3-D) NAND flash structure with fully charge storage using edge fringing field effect is presented, and its programming characteristic is evaluated. We successfully confirmed that this structure using fringing field effect provides good program characteristics showing sufficient threshold voltage ($V_T$) margin by technology computer-aided design (TCAD) simulation. From the simulation results, we expect that program speed characteristics of proposed structure have competitive compared to other 3D NAND flash structure. Moreover, it is estimated that this structural feature using edge fringing field effect gives better design scalability compared to the conventional 3D NAND flash structures by scaling of the hole size for the vertical channel. As a result, the proposed structure is one of the candidates of Terabit 3D vertical NAND flash cell with lower bit cost and design scalability.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1990년도 추계학술대회 논문집 학회본부
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• pp.88-92
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• 1990

An accurate analytical threshold model is presented for fully depleted SOI which has a Metal-Insulator-Semiconductor-Insulator-Metal structure. The threshold voltage is defined as the gate voltage at which the second derivative of the inversion charge with respect to the gate voltage is maximum. Therefore the model is self-consistent with the measurement scheme. Numerical simulations show good agreement with the model with less than 3% error.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 추계학술발표대회
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• pp.27.2-27.2
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• 2011

Polymer electronics is the one of the most promising way to realize the flexible electronics and many studies made remarkable progress to achieve the improvement in performance of polymer electronics comparable to current silicon-based technology. PBTTT is conjugated semiconducting polymer with highly ordered, chain-extended crystalline microstructures and shows high field effect mobilities above 0.1 $cm^2/Vs$. We studied PBTTTs FETs phase and explored methods to control channel interface in various device structures. Especially, in PBTTTs' unique nano-ribbon phase, we could obtain high mobilities of up to 0.4 $cm^2/Vs$, which was not reached before. Alignment of PBTTTs film was carried out using zone casting and anisotropy of mobilities in parallel and perpendicular to the polymer chain direction was investigated. Optical anisotropy in aligned nano-ribbon PBTTT FETs was also studied using a polarized optical absorption.

• 전자공학회논문지D
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• 제35D권8호
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• pp.31-37
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• 1998

A new self-consistent hole mobility model that includes lattice and hole temeprature has been proposed. By including the lattice and hole temperatures as well as the effective transverse field and the interface fixed charge, the model predicted the saturation of hole drift velocity and showed the effects of coulomb scattering, surface phonon scattering, and surface roughness scattering. The calculated data by the model were compared with the reported experimental data and they were shown to agree quite well. The new model is expected to estimate the characteristics of very short channel devices in the in the hydrodynamic model simulation.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제50권2호
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• pp.60-64
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• 2001

The degradation process of silicone rubber was investigated by leakage current monitoring in Inclined-Plane method. DAS (Data Acquisition System) with 12-bit, 8-channel A/D converter was prepared. Average current, cumulative charge, current waveform and the number of peak pulses were measured on-line. And, FFT (Fast Fourier Transform) analysis was performed with stored current waveform. Besides, maximum erosion depth was measured in order to use as the indicator of the degradation process. So, the results of leakage current components and maximum erosion depth measurements were compared to find one or more components which have trends of changing similarly to that of erosion process. The result suggests that the ratio of peak current to r.m.s. current, harmonic contents and the number of peak pulses are well corresponding with the degradation process.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1991년도 추계학술대회 논문집
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• pp.1-4
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• 1991

EEPROM technology has been used for storing analog weights as charge in a nitride layer between gate and channel of a field effect transistor. In the view of integrity and fabrication process, it is essentially required that SONOSFET is capable of performing synapse function as a basic element in an artificial neural networks. This work has introduced the VLSI implementation for synapses including current study and also investigated physical characteristics to implement synapse circuit using SONOSFET memories. Simulation results are shown in this work. It is proposed that multiplication of synapse element using SONOSFET memories will be developed more compact implementation under Present fabrication processes.

• 한국고분자학회:학술대회논문집
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• 한국고분자학회 2006년도 IUPAC International Symposium on Advanced Polymers for Emerging Technologies
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• pp.9-10
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• 2006

Recent work in our laboratory has focused on the molecular and supramolecular engineering of conjugated polymers and oligomers for device applications, including light emitting diodes for displays and lighting, photovoltaic cells, and thin film transistors. A central finding is that the supramolecular structure of conjugated polymers can have a dominant influence on their properties and the performance of devices. Some major results include: highly efficient RGB light-emitting diodes from polymers and oligomers; high mobility n-channel polymer field effect transistors; ambipolar thin film transistors from copolymer semiconductors; and self-assembly and ambipolar charge transport in polymer nanowires.

• 전자공학회논문지A
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• 제31A권1호
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• pp.77-83
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• 1994

Characteristics of hot-electron-induced degradation by AC, DC was investigated for p-MOSFET's(W/L=25/l$\mu$m) with sub-10nm RTP-CVD gate oxides. It was confirmed that the surface channel p-MOSFET of a thinner gate oxide shows less degradation. Mechanisms for this effect were analyzed using a simple MOS Device degradation model. It was found that the number of generated electron traps(fixed charge) is determined by the amount of peak gate current, dependent of the gate oxide thickness, and the major cause of the smaller degradation in the thinner gate oxide devices is the lower hot electron trapping carriers.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.254-257
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• 2008

We have investigated the effect of source/drain electrode deposition method on a performance of top gate structured ZnO TFT performance. TFT using S/D of ITO film, consisted of bi-layer which deposited by ion beam assisted sputtering at the initial stage then deposited by DC magnetron sputtering, showed better performance compared to that using S/D of ITO deposited by just DC magnetron sputtering. Two ITO films exhibited different grain shapes and these resulted in different etching properties. We also suspect that charge trapping on the glass substrate (back channel) during the ITO film deposition may influence the characteristics of top gate structured ZnO TFT.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1993년도 정기총회 및 추계학술대회 논문집 학회본부
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• pp.198-200
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• 1993

This paper represents the experimental results of electrohrdrodynamic(EHD) micropump driven by traveling- wave voltage. We fabricated 60 electrodes array with $100{\mu}m$ width and $100{\mu}m$ interval on the pyrex glass. On that glass we fabricated the micro channel which had the cross section of 3mm by 0.5mm. This pump was driven by 6 phase square traveling-wave voltage. We used the corn oil for experiments and increased the temperature of fluid by resistive heater. An optical microscope with CCD camera and monitor was used for observation. The fluid velocity was large for the large driving voltage and the high temperature. This EHD pump had the fluid velocity in specific frequency (near 1Hz) which had relation to the charge relaxation time in that oil.