A Study on the Characteristics of Synaptic Multiplication for SONOSFET Memory Devices

SONOSFET 기억소자의 시랩스 승적특성에 관한 연구

  • 이성배 (광운대학교 전자재료공학과) ;
  • 김병철 (광운대학교 전자재료공학과) ;
  • 김주연 (광운대학교 전자재료공학과) ;
  • 이상배 (광운대학교 전자재료공학과) ;
  • 서광열 (광운대학교 전자재료공학과)
  • Published : 1991.10.01

Abstract

EEPROM technology has been used for storing analog weights as charge in a nitride layer between gate and channel of a field effect transistor. In the view of integrity and fabrication process, it is essentially required that SONOSFET is capable of performing synapse function as a basic element in an artificial neural networks. This work has introduced the VLSI implementation for synapses including current study and also investigated physical characteristics to implement synapse circuit using SONOSFET memories. Simulation results are shown in this work. It is proposed that multiplication of synapse element using SONOSFET memories will be developed more compact implementation under Present fabrication processes.

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