• Journal of Korean Society of Environmental Engineers
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• v.27 no.5
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• pp.513-518
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• 2005

Catalytic oxidation of toluene on the manganese oxide catalysts and manganese-cerium oxide catalysts was investigated. The catalysts were characterised by X-ray diffraction(XRD), thermo gravimetric analyzer(TGA), toluene-temperature program reduction(Toluene-TPR). We found that the optimal manganese content was 18.2 wt.% and the optimal cerium content was 10.0 wt.% at catalytic oxidation of toluene. It is shown that ceria improves the activity of manganese oxide phases. From the XRD results, it was estimated that $MnO_2$ phase was active site in the monometallic and bimetallic catalysts. From the TGA and Toluene-TPR results, it show that ceria improves the mobility of the lattice oxygen, adequate oxidation state of the active phase, reduction ability at low temperature, and re-oxidation of the active site.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.28 no.3
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• pp.118-122
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• 2018

Ceria ($CeO_2$) is a rare earth oxide, which has been widely investigated to improve the property. It is important to increase the surface area of $CeO_2$, because high surface area of $CeO_2$ can improve the catalytic ability. $CeO_2$ nanoparticles were synthesized by a solvothermal process. A discussion on the influence of solvent ratio and precursors on $CeO_2$ nanoparticles was performed. The size and degree of the agglomeration of the synthesized $CeO_2$ could be tuned by controlling those parameters. The average size and distribution of prepared $CeO_2$ powders was in the range of 3 to 13 nm and narrow, respectively. The XRD pattern showed that the synthesized $CeO_2$ powders were crystalline with cubic phase of $CeO_2$. The average particle size was calculated by Scherrer equation and FE-TEM images. The morphology of the synthesized $CeO_2$ particle was objected using FE-TEM and FE-SEM. Specific surface area of the synthesized $CeO_2$ was determined using BET (Brunauer-Emmett-Teller) equation.

• Proceedings of the Korean Institute of Navigation and Port Research Conference
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• 2000.11a
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• pp.29-32
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• 2000

Cerium oxide thin film has been proposed as a buffer layer between the ferroelectric film and the Si substrate in Metal-Ferroelectric-Insulator-Silicon (MFIS ) structures for ferroelectric random access memory (FRAM) applications. In this study, CeO$_2$thin films were etched with Cl$_2$/Ar gas combination in an inductively coupled plasma (ICP). The highest etch rate of CeO$_2$film is 230 $\AA$/min at Cl$_2$/(Cl$_2$+Ar) gas mixing ratio of 0.2. This result confirms that CeO$_2$thin film is dominantly etched by Ar ions bombardment and is assisted by chemical reaction of Cl radicals. The selectivity of CeO$_2$to YMnO$_3$was 1.83. As a XPS analysis, the surface of etched CeO$_2$thin films was existed in Ce-Cl bond by chemical reaction between Ce and Cl. The results of XPS analysis were confirmed by SIMS analysis. The existence of Ce-Cl bonding was proven at 176.15 (a.m.u.).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.29-32
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• 2000

Cerium oxide thin film has been proposed as a buffer layer between the ferroelectric film and the Si substrate in Metal-Ferroelectric-Insulator-Silicon (MFIS ) structures for ferroelectric random access memory (FRAM) applications. In this study, CeO$_2$ thin films were etched with Cl$_2$/Ar gas combination in an inductively coupled plasma (ICP). The highest etch rate of CeO$_2$ film is 230 $\AA$/min at Cl$_2$/(Cl$_2$+Ar) gas mixing ratio of 0.2. This result confirms that CeO$_2$ thin film is dominantly etched by Ar ions bombardment and is assisted by chemical reaction of Cl radicals. The selectivity of CeO$_2$ to YMnO$_3$ was 1.83. As a XPS analysis, the surface of etched CeO$_2$ thin films was existed in Ce-Cl bond by chemical reaction between Ce and Cl. The results of XPS analysis were confirmed by SIMS analysis. The existence of Ce-Cl bonding was proven at 176.15 (a.m.u.).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.326-329
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• 2002

In this paper, we investigated a feasibility of cerium oxide(CeO$_2$) films as a buffer layer of MFIS(metal ferroelectric insulator semiconductor) type capacitor. CeO$_2$ layer were Prepared by two step process of a low temperature film growth and subsequent RTA (rapid thermal annealing) treatment. By app1ying an ultra thin Ce metal seed layer and N$_2$ Plasma treatment, dielectric and interface properties were improved. It means that unwanted SiO$_2$ layer generation was successfully suppressed at the interface between He buffer layer and Si substrate. The lowest lattice mismatch of CeO$_2$ film was as low as 1.76% and average surface roughness was less than 0.7 m. The Al/CeO$_2$/Si structure shows breakdown electric field of 1.2 MV/cm, dielectric constant of more than 15.1 and interface state densities as low as 1.84${\times}$10$\^$11/ cm$\^$-1/eV$\^$-1/. After N$_2$ plasma treatment, the leakage current was reduced with about 2-order.

• 한국신재생에너지학회:학술대회논문집
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• 2007.06a
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• pp.49-52
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• 2007

We investigated hydrogen storage and production properties using redox system of iron oxide($Fe_{3}O_{4}$ + $4H_{2}$ ${\leftrightarrows}$ 3Fe + $4H_{2}O$) modified with rhodium, ceria and zirconia under atmospheric pressure. Reduction of iron oxide with hydrogen(hydrogen storage) and re-oxidation of reduced iron oxide with steam(hydrogen evolution) was carried out using a temperature programmed reaction(TPR) technique. On the temperature programmed studies, the effects of amounts of cerium and zirconium on the re-oxidation rate of partial reduced iron oxides were increased with increasing metal additives amount, but the rhodium amount showed little effect on the re-oxidation rate. On the thermal studies, the re-oxidation rates were enhanced with increasing temperature(300 $^{\circ}C$ < 350 $^{\circ}C$).

• Environmental Analysis Health and Toxicology
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• v.23 no.2
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• pp.87-91
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• 2008

In this study, three different sizes of cerium oxide ($CeO_2$) nanoparticles were synthesized and exposed to Caenorhabditis elegans to investigate the potential harmful effect of $CeO_2$ nanoparticles on the environment. The effects of the $CeO_2$ nanoparticles on C. elegans were assessed at multiple levels, such as with respect to stress response gene expression, growth, reproduction and mortality. Moreover, to test the ecotoxicological relevance of $CeO_2$-induced gene expression. The overall results suggest that $CeO_2$ nanoparticles may provoke ecotoxicity in C. elegans especially with respect to gene expression, reproduction and survival, which can comprise an important contribution to knowledge on the ecotoxicity of $CeO_2$ nanoparticles, about which little data are available. This is particularly valuable in the biomarker research on ecotoxicology, as ecological relevance is a crucial criterion for the applicability of the biomarker in field biomonitoring and ecological risk assessment.

• Nuclear Engineering and Technology
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• v.52 no.11
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• pp.2572-2580
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• 2020

Emerging gamma ray detection applications that utilize neutron-based interrogation result in the prompt emission of high-energy (>2 MeV) gamma-rays. Rapid imaging is enabled by scintillators that possess high density, high atomic number, and excellent energy resolution. In this paper, we evaluate the bright (50,000 photons/MeV) oxide scintillator, cerium-doped Gd₂Al₂Ga₃O₁₂ (GAGG(Ce)). A silicon photomultiplier (SiPM) array is coupled to a GAGG(Ce) scintillator array (12 × 12 pixels) and integrated into a coded-aperture based gamma-ray imaging system. A resistor-based symmetric charge division circuit was used reduce the multiplicity of the analog outputs from 144 to 4. The developed system exhibits 9.1%, 8.3%, and 8.0% FWHM energy resolutions at 511 keV, 662 keV, and 1173.2 keV, respectively. In addition, a pixel-identification resolution of 602 ㎛ FWHM was obtained from the GAGG(Ce) scintillator array.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.12
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• pp.8-13
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• 2001

Cerium oxide ($CeO_2$) thin film has been proposed as a buffer layer between the ferroelectric thin film and the Si substrate in Metal-Ferroelectric-Insulator-Silicon (MFIS) structures for ferroelectric random access memory (FRAM) applications. In this study, $CeO_2$ thin films were etched with $Cl_2$/Ar gas mixture in an inductively coupled plasma (ICP). Etch properties were measured for different gas mixing ratio of $Cl_2$($Cl_2$+Ar) while the other process conditions were fixed at RF power (600 W), dc bias voltage (-200 V), and chamber pressure (15 mTorr). The highest etch rate of $CeO_2$ thin film was 230 ${\AA}$/min and the selectivity of $CeO_2$ to $YMnO_3$ was 1.83 at $Cl_2$($Cl_2$+Ar gas mixing ratio of 0.2. The surface reaction of the etched $CeO_2$ thin films was investigated using x-ray photoelectron spectroscopy (XPS) analysis. There is a Ce-Cl bonding by chemical reaction between Ce and Cl. The results of secondary ion mass spectrometer (SIMS) analysis were compared with the results of XPS analysis and the Ce-Cl bonding was monitored at 176.15 (a.m.u). These results confirm that Ce atoms of $CeO_2$ thin films react with chlorine and a compound such as CeCl remains on the surface of etched $CeO_2$ thin films. These products can be removed by Ar ion bombardment.

• Nano
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• v.13 no.10
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• pp.1850119.1-1850119.6
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• 2018

$Eu^{3+}/Tb^{3+}$ co-doped nanocomposite containing $CeO_2$ nanocrystals was successfully prepared by an in situ sol-gel polymerization approach. High-resolution transmission electron microscopy demonstrated the homogeneous precipitation of $CeO_2$ nanocrystals among the polymethylmethacrylate (PMMA) matrix. The thermal stability and UV-shielding capability of the obtained nanocomposite were improved with increase of $CeO_2$ content. The tuning of the emissive color from green and yellow to red can be easily achieved by varying the dopant species and concentration. These results suggested that the obtained nanocomposite could be potentially applicable in transparent solid-state luminescent devices.