• Journal of Biomedical Engineering Research
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• v.20 no.4
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• pp.443-449
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• 1999

현재 시판되고 있는 치과용 76.5%Pd-11.6%Cu-7.2^%GarP 합금의 주조상태 및 임상열처리에 따른 미세조직의 변화를 X-선 회절기, 광학현미경, 시차열분석기를 이용하여 관찰하였다. 주조상태, 탈개스 및 세리믹소성처리 후 미세조직은 Pd고용체와 금속간화합물 Pd2Ga으로 구성되어 나타났고, 이들 상들은 열처리에 따라 상당한 변화를 보였다. 또한 Pd은 아르곤 분위기 내의 산소와 반응하여 산화물 형성 및 분해로 인해 질량변화곡선(TG)이 변하였고, 시차열분석(DTA)에서는 약 815$^{\circ}C$ 정도에서 Pd2Ga에 기인하는 흡열피크를 확인하였다. 이러한 실험의 결과들은 Cu가 이원계 Pd-Ga 합금의 Ga의 고용량을 낮추어 공정반응이 저 Ga 쪽으로 이동하기 때문인 것으로 설명하였다. 그러나 앞으로 보다 명확한 상변태 규명을 위해서 TEM등의 분석장비를 사용하여 체계적인 연구가 요구된다.

• The Korean Journal of Ceramics
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• v.4 no.4
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• pp.363-367
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• 1998

Alumina/mica and spinel/mica composites were fabricated by sintering of compacts containing 20 mass% fluoromica ($KMg_3AlSi_3O-{10}F_2$) glass and alumina or spinel. In both composites, mica precipitated as plate-like crystals at temperatures lower than $1300^{\circ}C$ and melted at $1300^{\circ}C$ to $1400^{\circ}C$. In alumina/mica composites, alumina and glass reacted to produce spinel, and the densification progressed by the solution-precipitation of alumina. Consequently, the glass composition changed and the mica did not precipitate at temperatures higher than $1400^{\circ}C$. However, mica precipitated after a reheating process. In spinel/mica composites, the glass composition did not change. After the mica phase melted, it recrystallized during slow cooling. The relative density reached the maximum at $1500^{\circ}C$ for alumina/mica and at $1300^{\circ}C$ spinel/mica composites, and decreased at further high temperatures.

• The Korean Journal of Ceramics
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• v.4 no.4
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• pp.352-355
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• 1998

Dense $ Pb(Zr, Ti)O_3(PZT)/Al_2O_3$ nanocomposites were prepared by the 28 GHz microwave heating method and conventional electric furnace sintering. Electrical and mechanical properties of the composites were investigated. The fracture strength of the PZT composites with 0.1vol% $Al_2O_3$ was significantly improved in both sintering methods. Smaller grain size and effective reinforcement of the PZT matrix by the second phase were considered to be responsible for the excellent fracture strength. Planar electromechanical coupling factor Kp of the composites sintered by 28GHz microwave heating was higher than that of the materical prepared by the conventional route. It seemed that the control of the reaction between PZT and $Al_2O_3$ by the microwave rapid sintering resulted in the high piezoelectric properties.

• The Korean Journal of Ceramics
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• v.4 no.4
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• pp.387-393
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• 1998

The formation of titanium diboride ($TiB_2$ ) via the reduction of $TiO_2$ with boric oxide and carbon was studied in a partially reducing atmosphere of argon mixed with 4 vol.%H2. The effect of reaction time, temperature, partial pressure of nitrogen and $TiO_2/B_2_O3$ stoichiometric ratio on the reducibility of oxides has been studied. The phases formed were analysed by using X-ray rowder diffraction and scanning sosctron microscopic techniques. In this paper, we also investigated the presence of $CaC_2$ as a reducing agent on the reducibility of oxide mixtures and on the Ti-B-C-Ca-O phase equilibria. The morphology of $TiB_2$ formed in the presence of $CaC_2$ is compared with the microstructure of $TiB_2$ formed as a consequence of carbothermic reduction. The observed variation in $TiB_2$ crystals formed is also explained.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.2
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• pp.106-109
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• 2016

The YBaCuO superconducting bulks were prepared by the thermal diffusion process involving the peritectic reaction to investigate the effect on microstructure and superconductivity. All the diffused YBaCuO could be successively separated from superconducting 123 phase by applying the thermal diffusion process. Electromagnetic properties of treated and untreated YBaCuO superconductor were evaluated to investigate the pinning effect. It was confirmed experimentally that a large amount of magnetic flux was trapped in the thermal treated superconducting bulk than that in the untreated one, indicating that the pinning centers of magnetic flux are related closely to the occurrence mechanism of the magnetic effect.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09b
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• pp.866-867
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• 2006

This work will report a highly textured ${\beta}-Si_3N_4$ ceramic by aqueous slip casting in a magnetic field and subsequent pressureless sintering, Effects of the sintering aids, polymer dispersant, pH and stirring time on the stability of the $Si_3N_4$ slurries were studied. The textured ${\beta}-Si_3N_4$ with 97 % relative density could be obtained by slip casting in a magnetic field of 12 T and subsequent sintering at $1800^{\circ}C$ for 1 h. The textured microstructure is featured by the alignment of c-axis of ${\beta}-Si_3N_4$ crystals perpendicular to the magnetic field, and the Lotgering orientation factor, f, is determined to be 0.8.

• The Korean Journal of Ceramics
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• v.1 no.4
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• pp.214-218
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• 1995

Partially stabilized zironia with magnesia (Mg-PSZ) is known as one of the toughest monolithic ceramics. However, the very large grain sizes obtained after sintering at a high solution-heat treatment temperature in the cubic region of the phase diagram limit the strength of this material rather modest. In this study fine-grained Mg-PSZ materials were fabricated by adding TiC particles as a dispersed phase. Samples were hot-pressed at $1750^{\circ}C$ and then annealed at $1420^{\circ}C$ for various times. Grain growth was retarded severely by the TiC particles resulting in grain sizes smaller by more than one order of magnitude than those of PSZ without TiC. The fine-grained microstructure lead to doubly-increased fracture strength while maintaining the same level of high fracture toughness as that of conventional Mg-PSZ without TiC particles.

• The Korean Journal of Ceramics
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• v.3 no.1
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• pp.29-33
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• 1997

Four diamond films were deposited by the microwave plasma assisted chemical vapor deposition method varying CH4 concentration from 2.5 to 10% in the feeding gases. Thermal conductivity was measured on these free standing films by the steady state method from 80 K to 400K. They showed higher thermal conductivity as the film deposited with lower methane concentration. One exception, 7.79% methane concentration deposited film, was observed to be the highest thermal conductivity. Phonon scattering processes were considered to analyze the thermal conductivity with the full Callaway model. The grain size and the concentration of the extended and the point defects were used as the fitting parameters. Microstructure of diamond films was investigated with the scanning electron microscopy and Raman spectroscopy.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.295-299
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• 1999

The (S $r_{1-x}$C $a_{x}$)Ti $O_3$(SCT) thin films are deposited on Pt-coated electrode(Pt/TiN/ $SiO_2$/ Si) using RF sputtering method with substitutional contents of Ca. The maximum grain of thin films is obtained by substitution of Ca at 15[mol%]. The dielectric constant was increased with increasing the substitutional contents of Ca, while it was decreased if the substitutional contents of Ca exceeded over 15[mo1%]. The dielectric constant changes almost linearly in temperature ranges of -80~ +90[$^{\circ}C$]. The temperature properties of the dielectric loss have a stable value within 0.02 independent of the substitutional contents of Ca. All SCT thin films used in this study show the phenomena of dielectric relaxation with the increase of frequency, and the relaxation frequency is observed above 200(kHz).)..

• Journal of the Semiconductor & Display Technology
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• v.11 no.3
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• pp.63-67
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• 2012

The films were deposited at evaporator system and were annealed at heat treatment. The films had a dense microstructure with fine grains. The electrical properties of the films were dramatically controlled with annealing. Samples Preparation were analyzed in term of positive temperature coefficient of Resistivity Samples were made in the substrate tempera-true of $400^{\circ}C$ deposition time of 10 hours, and forward power of 210watt. R-T(resistivity-temperature) Characteristics of the samples were investigated as a function of the substrate type and the ambient temperature. The resistivity of the thin film specimens was compared with that of the bulk type specimens. By using RF/DC magnetron sputtering system, we obtained lower resistivity in the thermistor with thin $BaTiO_3$ film than that in the bulk type thermistor.