• Korean Membrane Journal
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• 제1권1호
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• pp.1-7
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• 1999

Pd-ceramic composite membranes and catalytic membrane reactors(CMR) have been studied for hydrogen and its isotopes (deuterium and tritium) purification and recovery in the fusion reactor fuel cycle. Particularly a closed-loop process has been studied for recovering tritium from tritiated water by means of a CMR in which the water gas shift reaction takes place. The development of the techniques for coating micro-porous ceramic tubes with Pd and Pd/Ag thin layers is described : P composite membranes have been produced by electroless deposition (Pd/Ag film of 10-20 $\mu$m) and rolling of thin metal sheets (Pd and Pd/Ag membranes of 50-70 $\mu$m). Experimental results of the electroless membranes have shown a not complete hydrogen selectivity because of the presence of some defects(micro-holes) in the metallic thin layer. Conversely the rolled thin Pd and Pd/ag membranes have separated hydrogen from the other gases with a complete selectivity giving rise to a slightly larger (about a factor 1.7) mass transfer resistance with respect to the electroless membranes. Experimental tests have confirmed the good performances of the rolled membranes in terms of chemical stability over several weeks of operation. Therefore these rolled membranes and CMR are adequate for applications in the fusion reactor fuel cycle as well as in the industrial processes where high pure hydrogen is required (i.e. hydrocarbon reforming for fuel cell)

• Journal of Ceramic Processing Research
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• 제13권spc2호
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• pp.394-397
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• 2012

In this work, we studied the influence of the dopant elements concentration on the properties of SnO2 thin films deposited by pulsed laser deposition. X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), Hall effect measurement and UV-Vis studies were performed to characterize the deposited films. XRD results showed that the films had polycrystalline nature with tetragonal rutile structure. FE-SEM micrographs revealed that the as deposited films composed of dense microstructures with uniform grain size distribution. All the films show n-type conduction and the best transparent conductive oxide (TCO) performance was obtained on 6 wt% Sb2O5 doped SnO2 film prepared at pO2 of 60mtorr and Ts of 500 ℃. Its resitivity, optical transmittance, figure of merit are 7.8 × 10-4 Ω cm, 85% and 1.2 × 10-2 Ω-1, respectively.

• Journal of Ceramic Processing Research
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• 제13권spc2호
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• pp.295-299
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• 2012

We investigated the crystal and the optical properties of GaN-based blue light emitting diodes (LEDs) which were simultaneously grown on c-plane (0001) and semipolar (11-22) GaN templates by using metal-organic chemical vapor deposition (MOCVD). The X-ray rocking curves (XRCs) full width at half maximums (FWHMs) of c-plane (0001) and semipolar (11-22) GaN templates were 275 and 889 arcsec, respectively. In addition, high-resolution X-ray ω-2θ scan showed that satellite peaks of semipolar (11-22) InGaN quantum-wells (QWs) was weaker and broader than that of c-plane (0001) InGaN QWs, indicating that the interface quality of c-plane (0001) QWs was superior to that of semipolar (11-22) QWs. Photoluminescence (PL) and electroluminescence (EL) results showed that the emission intensity and the FWHMs of polar c-plane (0001) LED were much higher and narrower than those of semipolar (11-22) LED, respectively. From these results, we believed that relative poor crystal quality of semipolar (11-22) GaN template might give rise to the poor interfacial quality of QWs, resulting in lower output power than conventional c-plane (0001) GaN-based LEDs.

• 멤브레인
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• 제21권1호
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• pp.72-83
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• 2011

고탁도 원수의 고도정수처리를 위해 관형 세라믹 정밀여과막 외부와 원통형 막 모듈 내부 사이의 공간에 광촉매를 충전한 혼성 모듈을 사용하였다. 광촉매는 PP (polypropylene) 구(bead)에 $TiO_2$ 분말을 플라즈마 화학증착(chemical vapor deposition) 공정으로 코팅한 것이다. 정수 원수 중 자연산 유기물(NOM)과 미세 무기 입자를 대체하기 위해, 휴믹산(humic acid)과 카올린(kaolin) 모사용액을 대상으로 하였다. 혼성공정에서 막오염을 최소화하기 위해 10분 주기로 10초 동안 물 역세척을 시행하였다. 휴믹산을 10 mg/L부터 2 mg/L로 변화시킴에 따라, 막오염에 의한 저항($R_f$)이 감소하고 J가 증가하여 2 mg/L에서 가장 높은 총여과부피($V_T$)를 얻었다. 탁도 및 $UV_{254}$ 흡광도의 처리효율은 각각 98.5% 및 85.7% 이상이었다. MF 공정 및 MF + $TiO_2$ 공정, MF + $TiO_2$ + UV 공정의 막여과 및 광촉매 흡착, 광산화의 처리 분율을 알아본 결과, 광촉매 흡착과 광산화에 의해 탁도는 거의 처리되지 않았으나, 광촉매 흡착 및 광산화에 의한 휴믹산 처리 분율은 각각 10.7, 8.6% 이상이었다.

• 한국수소및신에너지학회논문집
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• 제22권3호
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• pp.380-385
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• 2011

$MgH_2$ was synthesized by hydriding chemical vapor deposition (HCVD). In this study, we examined the hydrogen storage property of $MgH_2$ synthesized by HCVD. The results of pressure-composition-temperature (PCT) measurement showed that the HCVDed $MgH_2$ reversibly absorbed hydrogen as much as 6 wt%. Each hydrogenation rate was very greater than the conventional alloy methods. The reason was that the particle size made by HCVD was small as approximately 1 ${\mu}m$. The PCT of $MgH_2$ made by HCVD methode was similar to a commercial $MgH_2$. The ${\Delta}H$ and ${\Delta}S$ value are respectively -76.8 $kJ/mol{\cdot}H_2$ and -137.4 $kJ/mol{\cdot}H_2$. Mg made by HCVD methode was activated easily than commercial Mg. Also the initial reaction rate was faster than that of commercial $MgH_2$. 70% of the total storage were stored during 400s.

• 한국결정성장학회지
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• 제30권5호
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• pp.183-188
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• 2020

에어로졸 증착법에 의해서 상온에서 5~10 ㎛ 두께의 PZN-PZT(0 %, 20 %, 40 %) 복합체의 막을 실리콘/사파이어 기판 위에서 제조하였다. PZN의 농도는 0 %, 20 % 및 40 %까지 첨가하였다. 실리콘기판 및 사파이어 기판 위에서 증착된 막은 전기로에서 700℃ 및 900℃에서 각각 어닐링처리 하였으며 900℃에서 어닐링한 경우의 잔류분극 및 유전 상수 등의 전기적 특성이 700℃에서의 특성보다 우수하였다. 특히 900℃에서 어닐링한 2PZN-8PZT 막의 경우 1200℃에서 소결한 같은 조성의 벌크재에서 얻은 값과 상호 비교하였다. 열처리 온도가 높아짐에 따라 유전상수가 증가하는 경향을 보이는데 이는 후열처리에 따른 막의 결정성의 향상과 입자 성장으로 기인한다.

• The Korean Journal of Ceramics
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• 제2권4호
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• pp.216-220
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• 1996

In the present paper, a new type of DC arc plasma torch is disclosed. The principles of the new magnetic and fluid dynamic controlled large orifice long discharge tunnel plasma torch is discussed. Two series of DC Plasma Jet diamond film deposition equipment have been developed. The 20kW Jet equipped with a $\Phi$70 mm orifice torch is capable of deposition diamond films at a growth rate as high as 40$\mu\textrm{m}$/h over a substrate area of $\Phi$65 mm. The 100kW high power Jet which is newly developed based on the experience of the low power model is equipped with a $\Phi$120 mm orifice torch, and is capable of depositing diamond films over a substrate area of $\Phi$110 mm at growth rate as high as 40 $\mu\textrm{m}$/h, and can be operated at gas recycling mode, which allows 95% of the gases be recycled. It is demonstrated that the new type DC plasma torch can be easily scaled up to even higher power Jet. It is estimated that even by the 100kW Jet, the cost for tool grade diamond films can be as low as less than ＄4/carat.

• 센서학회지
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• 제15권3호
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• pp.216-221
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• 2006

ZnO thin films prepared by PLD method exhibit an excellent optical property, but may have some problems such as incomplete surface roughness and crystallinity. In this study, undoped ZnO buffer layers were deposited on (0001) sapphire substrates by ultra high vacuum pulse laser deposition (UHV-PLD) and molecular beam epitaxy (MBE) methods, respectively. After post annealing of ZnO buffer layer, undoped ZnO thin films were deposited under different oxygen pressure ($35{\sim}350$ mtorr) conditions. The Arsenic-doped (1, 3 wt%) ZnO thin layers were deposited on the buffer layer of undoped ZnO by UHV-PLD method. The optical property of the ZnO thin films was analyzed by photoluminescence (PL) measurement. The ${\theta}-2{\theta}$ XRD analysis exhibited a strong (002)-peak, which indicates c-axis preferred orientation. Field emission-scanning electron microscope (FE-SEM) revealed that microstructures of the ZnO thin films were varied by oxygen partial pressure, Arsenic doping concentration, and deposition method of the undoped ZnO buffer layer. The denser and smoother films were obtained when employing MBE-buffer layer under lower oxygen partial pressure. It was also found that higher Arsenic concentration gave the enhanced growing of columnar structure of the ZnO thin films.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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• pp.216-216
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• 1999

The usage of a stationary plasma thruster (SPT) ion source, invented previously for space application in Russia, in experiments with surface modifications and film deposition systems is reported here. Plasma in the SPT is formed and accelerated in electric discharge taking place in the crossed axial electric and radial magnetic fields. Brief description of the construction of specific model of SPT used in the experiments is presented. With gas flow rate 39ml/min, ion current distributions at several distances from the source are obtained. These was equal to 1~3 mA/$\textrm{cm}^2$ within an ion beam ejection angle of $\pm$20$^{\circ}$with discharge voltage 160V for Ar as a working gas. Such an extremely high ion current density allows us to obtain the Ti metal films with deposition rate of $\AA$/sec by sputtering of Ti target. It is shown a possibility of using of reactive gases in SPT (O2 and N2) along with high purity inert gases used for cathode to prevent the latter contamination. It is shown the SPT can be operated at the discharge and accelerating boltages up to 600V. The results of presented experiments show high promises of the SPT in sputtering and surface modification systems for deposition of oxide thin films on Si or polymer substrates for semiconductor devices, optical coatings and metal corrosion barrier layers. Also, we have been tried to establish in application of the modeling expertise gained in electric and ionic propulsion to permit numerical simulation of additional processing systems. In this mechanism, it will be compared with conventional DC sputtering for film microstructure, chemical composition and crystallographic considerations.

• The Korean Journal of Ceramics
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• 제6권3호
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• pp.219-223
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• 2000

The ferroelectric SBT films were deposited on Pt/Ti/SiO$_2$/Si substrates by liquid injection metalorganic chemical vapor deposition (MOCVD) with single-mixture solution of Sr[Ta(OEt)$_5$(dmae)]$_2$and Bi(C$_6$ 6/H$_5$)$_3$. The Sr/Ta and Bi/Ta ratio in SBT films depended on deposition temperature and mol ratio of precursor in the single-mixture solution. At the substrate temperature of 40$0^{\circ}C$, Sr/Ta and Bi/Ta ratio were close to 0.4 and 1 at precursor mol ratio of 0.5~1.0, respectively. As-deposited film was amorphous. However, after annealing at 75$0^{\circ}C$ for 30 min in oxygen atmosphere, the diffraction patterns indicated polycrystalline SBT phase. The remanent polarization (Pr) and coercive field (Ec) of SBT film annealed at 75$0^{\circ}C$ were 4.7$\mu$C/$\textrm{cm}^2$ and 115.7kV/cm at an applied voltage of 5V, respectively. The SBT films annealed at 75$0^{\circ}C$ showed practically no polarization fatigue up to 10$^10$ switching cycles.