• 한국세라믹학회:학술대회논문집
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• 한국세라믹학회 2000년도 추계총회,초청강연,특별강연,연구발표회
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• pp.160.1-160
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• 2000

• 한국진공학회:학술대회논문집
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• 한국진공학회 1996년도 제10회 학술발표회 논문개요집
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• pp.91-91
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• 1996

• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part2
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• pp.907.2-907.2
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• 2006

• 한국세라믹학회:학술대회논문집
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• 한국세라믹학회 2003년도 추계총회 및 연구발표회 초록집
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• pp.147.1-147
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• 2003

• 한국세라믹학회:학술대회논문집
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• 한국세라믹학회 2003년도 추계총회 및 연구발표회 초록집
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• pp.210.2-210
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• 2003

• 한국재료학회:학술대회논문집
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• 한국재료학회 1998년도 IUMRS-ICEM ABSTRACT BOOK
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• pp.81.1-81
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• 1998

• 센서학회지
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• 제23권6호
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• pp.420-424
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• 2014

Aluminum-scandium nitride ($Al_{1-x}Sc_xN$) thin films with a TiN buffer layer have been fabricated on SUS430 substrate by RF reactive magnetron sputtering at room temperature under 50% $N_2$/Ar. The effect of Sc-doping on the structure and piezoelectric properties of AlN films has been investigated using SEM, XRD, surface profiler and pressure-voltage measurements. The as-deposited AlN films showed polycrystalline phase, and the Sc-doped AlN film, the peak of AlN (002) plane and the crystallinity became very strong. With Sc-doping, the crystal size of AlN film was grown from ~20 nm to ~100 nm. The output signal voltage of AlN sensor showed a linear behavior between 15~65 mV, and output signal voltage of Sc-doped AlN sensor was increased over 7 times. The pressure-sensing sensitivity of AlN film was calculated about 10.6mV/MPa, and $Al_{0.88}Sc_{0.12}N$ film was calculated about 76 mV/MPa.

• 한국전기전자재료학회논문지
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• 제29권11호
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• pp.702-706
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• 2016

We demonstrated that self-separation FS-GaN (freestanding-GaN) was grown on MELO (maskless epitaxially lateral overgrowth) GaN template by horizontal HVPE (hydride vapor phase epitaxy). Before thick GaN grwoth, MELO GaN template was grown on patterned GaN template by MOCVD (metal organic chemical vapor deposition). The laterally overgrown GaN would consist of a continuous well coalesced layer. The mixed TDD (threading dislocation density) of seed and wing region were $8{\times}10^8cm^{-2}$ and $7{\times}10^7cm^{-2}$, respectively. After thick GaN grown by HVPE, the self-separation between thick GaN and sapphire substrate was generated at seed region. The regions of self-separation for FS-GaN and sapphire were observed by FE-SEM. Moreover, Raman results indicated that the compressive strain of seed and wing regions at FS-GaN substrate were slightly released compared to that of thick GaN grown on conventional GaN template. The optical properties of the FS-GaN substrate were examined by using PL (photoluminescence). The PL exhibited that donor bound exciton and donor acceptor pair were observed at low temperature. The effects on optical and structural properties of FS-GaN substrate have been discussed in detail.

• 한국결정성장학회지
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• 제20권4호
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• pp.168-172
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• 2010

양전하를 갖는 poly(allylamine hydrochloride)(PAH)와 음전하를 갖는 poly(acrylic acid)(PAA) 전해질 폴리머를 사용하여 layer-by-layer(LBL) self-assembly 방법에 의해 초친수 특성을 갖는 박막을 제조하였다. PAH/PAA 박막의 밀착강도를 증가시키기 위하여 glutaraldehyde(GA) 수용액을 이용하여 amine-aldehyde의 화학반응에 따른 박막의 표면구조 변화, 막두께, 투과율, 접촉각, 밀착강도 특성을 측정하였다. PAH와 PAA 용액 침적 사이에 기판을 GA 수용액에 침적함으로써 박막의 두께는 감소하였지만 밀착강도는 2배 이상 증가하였다. 밀착강도의 증가는 PAH 와 GA의 amine-aldehyde의 화학반응에 의한 결과라는 것을 fourier transform infrared(FT-IR) spectroscopy를 사용하여 확인하였다. 제조된 PAH/PAA and PAH/GA/PAA 박막은 물 접촉각 $5^{\circ}$이하의 초친수 박막 특성을 보여주었고, 550 nm 파장에서 91.3% 이상의 높은 투과율을 나타내었다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2009년도 추계학술발표대회
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• pp.41.1-41.1
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• 2009

Aerosol Deposition (AD) is anovel way to fabricate bioactive ceramic coatings in biomedical implants and prostheses applications. In the present work, silicon-substituted hydroxyapatite (HA) coatings on commercially pure titanium were prepared by aerosol deposition using Si-HA powders. The incorporation of silicon in the HA lattice is known to improve the bioactivity of the HA, makingsilicon-substitute HA an attractive alternative to pure HA in biomedical applications. Si-HA powders with the chemical formula $Ca_{10}(PO_4)_6-x(SiO_4)x(OH)_2-x$, having silicon contents up to x=0.5 (1.4 wt%), were synthesized by solid-state reaction of $Ca_2P_2O_7$, $CaCO_3$, and $SiO_2$. The Si-HA powders were characterized by X-ray diffraction (XRD), X-ray fluorescence spectrometry (XRF), and Fourier transform infrared spectroscopy(FT-IR). The corresponding coatings were also analyzed by XRD, scanning electron microscopy (SEM), and electron probe microanalyzer (EPMA). The results revealed that a single-phase Si-HA was obtained without any secondary phases such as $\alpha$- or $\beta$-tricalcium phosphate (TCP) for both the powders and the coatings.The Si-HA coating was about $5\;{\mu}m$ thick, had a densemicrostructure with no cracks or pores. In addition, the proliferation and alkaline phosphatase (ALP) activity of MC3T3-E1 preosteoblast cells grown on the Si-HA coatings were significantly higher than those on the bare Ti and pure HA coating. These results revealed the stimulatory effects induced by siliconsubstitution on the cellular response to the HA coating.