• Title/Summary/Keyword: Ceramic deposition

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Effective Oxygen-Defect Passivation in ZnO Thin Films Prepared by Atomic Layer Deposition Using Hydrogen Peroxide

  • Wang, Yue;Kang, Kyung-Mun;Kim, Minjae;Park, Hyung-Ho
    • Journal of the Korean Ceramic Society
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    • v.56 no.3
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    • pp.302-307
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    • 2019
  • The intrinsic oxygen-vacancy defects in ZnO have prevented the preparation of p-type ZnO with high carrier concentration. Therefore, in this work, the effect of the concentration of H2O2 (used as an oxygen source) on the oxygen-vacancy concentration in ZnO prepared by atomic layer deposition was investigated. The results indicated that the oxygen-vacancy concentration in the ZnO film decreased by the oxygen-rich growth conditions when using H2O2 as the oxygen precursor instead of a conventional oxygen source such as H2O. The suppression of oxygen vacancies decreased the carrier concentration and increased the resistivity. Moreover, the growth orientation changed to the (002) plane, from the combined (100) and (002) planes, with the increase in H2O2 concentration. The passivation of oxygen-vacancy defects in ZnO can contribute to the preparation of p-type ZnO.

A Study on the Chemically Vapor Deposited TiC, TiN, and TiC(C, N) on $Si_3N_4$-TiC Ceramic Tools. ($Si_3N_4-TiC$ Ceramic 공구에 화학증착된 TiC, TiN 및 Ti(C, N)에 관한 연구)

  • 김동원;김시범;이준근;천성순
    • Tribology and Lubricants
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    • v.4 no.2
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    • pp.36-43
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    • 1988
  • Titanium carbide(TiC) and titanium nitride(TiN) flims were deposited on $Si_3N_4$-TiC composite cutting tools by chemical vapor deposition(CVD) using $TiCl_4-CH_4-H_2$ and $TiCl_4-H_2-N_2$ gas mixtures, respectively. The nonmetal to metal ratio of deposit increases with increasing $m_{C/Ti}$(mole ratio of CH$_4$ to TiCl$_4$ in the input) for TiC coatings and $m_{N/Ti}$(mole ratio of N$_2$ to TiCl$_4$ in the input) for TiN coatings. The nearly stoiahiometric films could be obtained under the deposition condition of $m_{C/Ti}$ between 1.15 and 1.61 for TiC, and that of $m_{N/Ti}$ between 25 and 28 for TiN. Also maximum microhardness of the coatings can be obtained in these ranges. The interfacial region of TiC coatings on $Si_3N_4$-TiC ceramics is wider than that of TiN coatings according to Auger depth profile analysis, which indicates good interfacial bonding for TiC. Experimental results show that TiC coatings have an randomly equiaxed structure and Columnar structure with(220) preferred orientation can be obtained for TiN coatings. And, multilayer coatings have a dense and equiaxed structure.

Effect of Processing Conditions for Atmospheric Plasma Spraying on Characteristics of Ceramic Coatings (상압 플라즈마 용사의 공정조건에 따른 세라믹 피막의 특성)

  • 주원태;최병룡;홍상희
    • Journal of the Korean institute of surface engineering
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    • v.26 no.4
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    • pp.192-202
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    • 1993
  • The characteristics of the high-performance ceramic coatings fabricated on the optimum processings con-ditions for the atmospheric plasma spraying are evaluated by various material tests and analyses. The opti-mum processing parameters for the plasma spraying are determined by using the two-level orthogonal arrays of fractional factorial testing method as a statistical approach. Material tests for the coating specimens are carried out to evaluate microstructure, hardness, adhesion strength, and deposition efficiency. The properties of Al2O3-13%TiO2 coating are discussed with regard to the effective processings parameters. The decarburization effects of WC-12%Co coating is examined by XRD analysis in terms of the arc power and the secondary gas species. The hardness of Al2O2-13%TiO2 coating is increased with the arc power and shows the maximum value at around 40 lpm of Ar gas flowrate, which appears to be the most critical parame-ter on the deposition efficiency. For reducing the decarburization of WC-12%Co coating, the injection of inert He gas instead of reactive H2 gas as a secondary gas is more effective than the dropping of arc power to lessen the plasma enthalpy.

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Amorphous Lithium Lanthanum Titanate Solid Electrolyte Grown on LiCoO2 Cathode by Pulsed Laser Deposition for All-Solid-State Lithium Thin Film Microbattery (전고상 리튬 박막 전지 구현을 위해 펄스 레이저 증착법으로 LiCoO2 정극위에 성장시킨 비정질 (Li, La)TiO3고체 전해질의 특성)

  • 안준구;윤순길
    • Journal of the Korean Ceramic Society
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    • v.41 no.8
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    • pp.593-598
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    • 2004
  • To make the all-solid-state lithium thin film battery having less than 1 fm in thickness, LiCoO$_2$ thin films were deposited on Pt/TiO$_2$/SiO$_2$/Si substrate as a function of Li/Co mole ratio and the deposition temperature by Pulsed Laser Deposition (PLD). Especially, LiCoO$_2$ thin films deposited at 50$0^{\circ}C$ with target of Li/Co=1.2 mole ratio show an initial discharge capacity of 53 $\mu$Ah/cm$^2$-$\mu$m and capacity retention of 67.6%. The microstructural and electrochemical properies of (Li, La)TiO3 thin films grown on LiCoO$_2$Pt/TiO$_2$/SiO$_2$/Si structures by Pulsed Laser Deposition (PLD) were investigated at various deposition temperatures. The thin films grown at 10$0^{\circ}C$ show an initial discharge capacity of approximately 51 $\mu$Ah/cm$^2$-$\mu$m and moreover show excellent discharge capacity retention of 90% after 100 cycles. An amorphous (Li, La)TiO$_3$ solid electrolyte is possible for application to solid electrolyte for all-solid-state lithium thin film battery below 1 $\mu$m.

Optical Properties and Structural Analysis of SiO2 Thick Films Deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD법에 의해 증착된 SiO2 후막의 광학적 성질 및 구조적 분석)

  • Cho, Sung-Min;Kim, Yong-Tak;Seo, Yong-Gon;Yoon, Hyung-Do;Im, Young-Min;Yoon, Dae-Ho
    • Journal of the Korean Ceramic Society
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    • v.39 no.5
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    • pp.479-483
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    • 2002
  • Silicon dioxide thick film using silica optical waveguide cladding was fabricated by Plasma Enhanced Chemical Vapor Deposition(PECVD) method, at a low temperature ($320^{\circ}$C) and from $(SiH_4+N_2O)$ gas mixtures. The effects of deposition parameters on properties of $SiO_2$ thick films were investigated by variation of $N_2O/SiH_4$ flow ratio and RF power. After the deposition process, the samples were annealed in a furnace at $1150^{\circ}$C, in N2 atmosphere, for 2h. As the $N_2O/SiH_4$ flow ratio increased, deposition rate decreased from 9.4 to 2.9 ${\mu}m/h$. As the RF power increased, deposition rate increased from 4.7 to 6.9 ${\mu}m/h$. The thickness and the refractive index measurements were measured by prism coupler. X-ray Photoelectron Spectroscopy(XPS) and Fourier Transform-infrared Spectroscopy(FT-IR) were used to determine the chemical states. The cross-section of films was observed by Scanning Electron Microscopy(SEM).

Aerosol Deposition Nozzle Design for Uniform Flow Rate: Divergence Angle and Nozzle Length

  • Kim, Jae Young;Kim, Young Jin;Jeon, Jeong Eun;Jeon, Jun Woo;Choi, Beom Soo;Choi, Jeong Won;Hong, Sang Jeen
    • Journal of the Semiconductor & Display Technology
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    • v.21 no.2
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    • pp.38-44
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    • 2022
  • Plasma density in semiconductor fabrication equipment becomes higher to achieve the improved the throughput of the process, but the increase of surface corrosion of the ceramic coated chamber wall has been observed by the increased plasma density. Plasma chamber wall coating with aerosol deposition prefer to be firm and uniform to prevent the potential creation of particle inside the chamber from the deformation of the coating materials, and the aerosol discharge nozzle is a good control factor for the deposited coating condition. In this paper, we investigated the design of the nozzle of the aerosol deposition to form a high-quality coating film. Computational fluid dynamics (CFD) study was employed to minimize boundary layer effect and shock wave. The degree of expansion, and design of simulation approach was applied to found out the relationship between the divergence angle and nozzle length as the key parameter for the nozzle design. We found that the trade-off tendency between divergence angle and nozzle length through simulation and quantitative analysis, and present the direction of nozzle design that can improve the uniformity of chamber wall coating.

Preparation of SDC electrolyte film for IT-SOFCs by electrophoretic deposition (EPD를 이용한 IT-SOFC용 SDC 전해질 필름의 제조)

  • Lee, Kyeong-Seop;Jo, Chul-Gi;Kim, Young-Soon;Shin, Hyung-Shik
    • 한국신재생에너지학회:학술대회논문집
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    • 2009.11a
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    • pp.158-158
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    • 2009
  • The electrophoretic deposition(EPD) technique with a wide range of novel applications in the processing of advanced ceramic materials and coatings, has recently gained increasing interest both in academic and industrial sector not only because of the high versatility of its use with different materials and their combinations but also because of its cost-effectiveness requiring simple apparatus. Compared to other advanced shaping techniques, the EPD process is very versatile since it can be modified easily for a specific application. For example, deposition can be made on flat, cylinderical or any other shaped substrate with only minor charge in electrode design and positioning[1]. The synthesis of the nano-sized Ce0.2Sm0.8O1.9(SDC)particles prepared by aurea based low temperature hydrothermal process was investigated in this study[2].When we made the SDC nanoparticles, changed the time of synthesis of the SDC. The SDC nanoparticles were characterized with field-emission scanning electron microscope(FESEM), energy dispersive X-ray analysis(EDX), and X-ray diffraction(XRD). And also we researched the results of our investigation on electrophoretic deposition(EPD) of the SDC particles from its suspension in acetone solution onto a non-conducting NiO-SDC substrate. In principle, it is possible to carry out electrophoretic deposition on non-conducting substrates. In this case, the EPD of SDC particles on a NiO-SDC substrate was made possible through the use of a adequately porous substrate. The continuous pores in the substrates, when saturated with the solvent, helped in establishing a "conductive path" between the electrode and the particles in suspension[3-4]. Deposition rate was found to increase its increasing deposition time and voltage. After annealing the samples $1400^{\circ}C$, we observed that deposited substrate.

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Fabrication of Solid Oxide Fuel Cells with Electron Beam Physical Vapor Deposition: I. Preparation of Thin Electrolyte Film of YSZ (전자빔 물리증착을 이용한 고체 산화물 연료전지의 제조 : I. YSZ 박막 전해질의 제조)

  • Kim, Hyoungchul;Koo, Myeong-Seo;Park, Jong-Ku;Jung, Hwa-Young;Kim, Joosun;Lee, Hae-Weon;Lee, Jong-Ho
    • Journal of the Korean Ceramic Society
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    • v.43 no.2 s.285
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    • pp.85-91
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    • 2006
  • Electron Beam Physical Vapor Deposition (EB-PVD) was applied to fabricate a thin film YSZ electrolyte with large area on the porous NiO-YSZ anode substrate. Microstructural and thermal stability of the as-deposited electrolyte film was investigated via SEM and XRD analysis. In order to obtain an optimized YSZ film with high stability, both temperature and surface roughness of substrate were varied. A structurally homogeneous YSZ film with large area of $12\times12\;cm^2$ and high thermal stability up to $900^{\circ}C$ was fabricated at the substrate temperature of $T_s/T_m$ higher than 0.4. The smoother surface was proved to give the better film quality. Precise control of heating and cooling rate of the anode substrate was necessary to obtain a very dense YSZ electrolyte with high thermal stability, which affords to survive after post heat treatment for fabrication a cathode layer on it as well as after long time operation of solid oxide fuel cell at high temperature.

Effect of Post-Annealing on the Microstructure and Electrical Properties of PMN-PZT Films Prepared by Aerosol Deposition Process (후열처리 공정이 에어로졸 증착법에 의해 제조된 PMN-PZT 막의 미세구조와 전기적 특성에 미치는 영향)

  • Hahn, Byung-Dong;Ko, Kwang-Ho;Park, Dong-Soo;Choi, Jong-Jin;Yoon, Woon-Ha;Park, Chan;Kim, Doh-Yeon
    • Journal of the Korean Ceramic Society
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    • v.43 no.2 s.285
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    • pp.106-113
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    • 2006
  • PMN-PZT films with thickness of $5\;{\mu}m$ were deposited on $Pt/Ti/SiO_2/Si$ substrate at room temperature using aerosol deposition process. The films showed fairly dense microstructure without any crack. XRD and TEM analysis revealed that the films consisted of randomly oriented nanocrystalline and amorphous phases. Post-annealing process was employed to induce crystallization and grain growth of the as-deposited films and to improve the electrical properties. The annealed film showed markedly improved electrical properties in comparison with as-deposited film. The film after annealing at $700^{\circ}C$ for 1h exhibited the best electrical properties. Dielectric constant $(\varepsilon_r)$, remanent polarization $(P_r)$ and piezoelectric constant $(d_{33})$ were 1050, $13\;{\mu}C/cm^2$ and 120 pC/N, respectively.

The Effective $P_2O_5$ Doping into $B_2O_3-P_2O_5-SiO_2$ Silica Layer Fabrication by Flame Hydrolysis Deposition (FHD법에 의한 $B_2O_3-P_2O_5-SiO_2$ 실리카막의 효과적인 $P_2O_5$ 도핑)

  • 심재기;이윤학;성희경;최태구
    • Journal of the Korean Ceramic Society
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    • v.35 no.4
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    • pp.364-370
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    • 1998
  • Boron-phoshor-silicate glass was fabricated on Si substrates by FHD(Flame Hydrolysis Deposition) The microstructrue of silica soot deposited at various conditon such as composition and substrate temperature was analysed by SEM. After consolidation the refractive index and composition of the silica layer were in-vestigated. For refractive index control B, P and Ge were used as additive elements while B and Ge oxides are easily mixed into $SiO_2$, P oxide($B_2O_3$) doping is difficult because of the volatile property due to low melt-ing point. Boron-phosphorous-silicate glass (BPSG) layer were fabricated using bertical torch and optimized flame temperature substrate temperature and distance of torch and substrate. P concentration of BPSG lay-er measured 3.3 Wt% and the consolidation temperature was lower than $1180^{\circ}C$. The measured refractive index of BPSG silica layer in $1.55\;\mu\textrm{m}$ wavelength was $1.4480{\pm}1{\times}10^{-1}$ and the thickness was $22{\pm}1\;\mu\textrm{m}$.

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