• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.192-192
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• 2009

We have successfully demonstrated the inkjet printing process to fabricate $Al_2O_3$ thick films without a high temperature sintering process. A single solvent system had a coffee ring pattern after printing of $Al_2O_3$ dot, line and area. In order to fabricate the smooth surface of $Al_2O_3$ thick film, we have introduced a co-solvent system which has nano-sized $Al_2O_3$ powders in the mixture of Ethylene glycol monomethyl ester and Di propylene glycol methyl ether. This co-solvent system approached a uniform and dense deposition of $Al_2O_3$ powders on the substrate. The packing density of inkjet-printed $Al_2O_3$ films is more than 70% which is very high compared to the value obtained from the films synthesized by other conventional methods such as casting processes. The characterization of the inkjet-printed $Al_2O_3$ films has been implemented to investigate its thickness and roughness. Also the dielectric loss of the films has been measured to understand the feasibility of its application to 3D integration package substrate.

• 센서학회지
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• 제15권2호
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• pp.84-89
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• 2006

Highly concentrated p-type ZnO thin films can be obtained by doping of N, P and As elements. In this study, undoped ZnO buffer layers were prepared on a (0001) sapphire substrate by a ultra high vaccum pulsed laser deposition(UHV-PLD) method. ZnO buffer layers were deposited with various deposition temperature($400{\sim}700^{\circ}C$) at 350 mtorr of oxygen working pressure. Arsenic doped(1 wt%) ZnO thin films were deposited on the ZnO buffer layers by UHV-PLD. Crystallinity of the samples were evaluated by X-ray diffractometer and scanning electron microscopy. Optical, electrical properties of the ZnO thin films were estimated by photoluminescence(PL) and Hall measurements. The optimal condition of the undoped ZnO buffer layer for the deposition of As-doped ZnO thin films was at $600^{\circ}C$ of deposition temperature.

• Journal of Magnetics
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• 제12권3호
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• pp.129-132
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• 2007

Bismuth-substituted yttrium iron garnet (Bi:YIG, $Bi_{0.5}Y_{2.5}Fe_5O_{12}$) films were deposited with aerosol deposition method and their magnetic and optical properties were investigated as a function of annealing temperature. Since the ceramic films deposited with aerosol deposition method have not a perfect crystal structure due to non-uniform internal stress occurred by mechanical collision during their deposition, the post annealing could be a key process to release its internal stress and to improve its micro structure for optimizing the magnetic and magneto-optic properties of films. The crystallinity of Bi: YIG film was improved with increase of annealing temperature, and the saturation magnetization increased up to 87 emu/cc at $800^{\circ}C$. The Faraday rotation increased up to $1.4deg/{\mu}m$ by annealing at $700^{\circ}C$ around the wavelength of $0.5{\mu}m$. The optical transmittance of the Bi:YIG film was also improved in visible region.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.173-174
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• 2009

The SBN thin films are deposited on Pt-coated electrode(Pt/Ti/$SiO_2/Si$) using RF sputtering method at various deposition conditions. The optimum conditions of RF power and $Ar/O_2$ ratio were 60[W] and 70/30, respectively. Also, The surface rougness showed about 4.33[nm] in RF power 60[W] and $Ar/O_2$ ratio 70/30.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.75-76
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• 2006

olycrystailine CdSe thin films were grown on ceramic substrate using a chemical bath deposition (CBD)method. They were annealed at various temperature and X-ray diffraction patterns were measured by X-ray diffractometer in order to study CdSe polycrystal structure. Its grain size was about 0.3 ${\mu}m$. Hall effect on this sample was measured by Van der Pauw method and studied on carrier density and movility depending on temperature. We measured also spectral response, sensitivity($\gamma$), maximum allowable power dissipation and response time on these samples.

• The Korean Journal of Ceramics
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• 제4권1호
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• pp.20-24
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• 1998

Thin films of diamond-like carbon(DLC) can be successfully deposited by using a magnetron plasma chemical vapor deposition (CVD) method with an rf(13.56 MHz) plasma of $C_dH_8$. Plasma characteristics are analyzed as a function of the magnetic field. As the magnetic field increases, both electron temperature ($T_e$) and density ($n_e$)increase, but the negative dc self-bias voltage (-$V_{ab}$) decreases, irrespective of gas pressures in the range of 1~7 mTorr. High deposition rates have been obtained even at low gas pressures, which may be attributed to the increased mean free path of electrons in the magentron plasma. Effects of rf power and additive gas on the structural properties of DLC films aer also examined by using various technique namely, TED(transmissio electron diffraction) microanalysis, FTIR, and Raman spectroscopies.

• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part2
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• pp.1107-1108
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• 2006

The coating of conductive polypyrrole (Ppy) on nonconductive ceramic substrates was performed by polymerization of pyrrole (Py) in an aqueous solution. The Ppy film was characterized by scanning electron microscopy and conductivity measurements. Electrophoretic deposition of bimodal alumina suspension prepared with a phosphate ester was performed using Ppy film as a cathode. Fabrication of alumina ceramics with irregular shapes or complicated patterns were also attempted by sintering the deposits together with the Ppy coated substrates in air.

• The Korean Journal of Ceramics
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• 제3권1호
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• pp.24-28
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• 1997

Diamond deposition by muti-cathode DC PACVD has been investigated. Five cathodes were independently connected to their own DC power supplies. The voltage and current of each cathods were varied up to 700 V and 3.5 A, respectively. The plasma formation and the diamond deposition behaviour on a substrate of 3 inch in diameter were investigated by optical emission spectroscopy, SEM and Raman spectroscopy. The plasma formed by five cathodes was non-uniform, which was depended on the geometry of cathods array. The growth rate and the quality of diamond film were closely related to the spatial distribution of the plasma.

• The Korean Journal of Ceramics
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• 제5권2호
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• pp.137-141
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• 1999

To increase the strength of high-purity porous mullite ceramics, ultra fine mullite precursor powders of about 10nm in diameter were deposited at point of contact between primary coarse mullite particles of about 60$\mu\textrm{m}$. The deposited and hetero coagulated structures of ultra fine mullite precursor powders were controlled by pH. The optimum pH condition to form a uniform deposition of mullite powders between coarse mullite particles was in the range from 7 to 8. Deposition of the ultra fine powders did not form at pH < 7 and pH > 10 irregular deposition was observed from pH 8 to 9.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 추계학술대회 논문집
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• pp.189-193
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• 1997

(S $r_{0.85}$/C $a_{0.15}$)Ti $O_3$(SCT) thin films at various deposition temperature and rf power were grown by rf magnetron sputtering method on optimized Pt-based electrodes (Pt/TiN/ $SiO_2$/Si). The crystallinity of the films increases with increasing deposition temperature. SCT thin film is depend on the surface morphology and crystallinity of Pt films for bottom electrode. Dielectric constant of (S $r_{0.85}$C $a_{0.15}$)Ti $O_3$ thin films deposited on Si wafer substrate are larger with the increase of deposition temperature and gain size.in size.