• 한국세라믹학회지
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• 제46권5호
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• pp.441-446
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• 2009

Dense crack-free yttria film with 10 $\mu m$ thickness was prepared on aluminum by aerosol deposition. X-ray diffraction pattern on the film showed that it contained the same crystalline phase as the raw powder. Transmission electron microscopy revealed a nanostructured yttria film with grains smaller than 100 nm. Tensile adhesion strength between the film and aluminum substrate was 57.8 $\pm$ 6.3MPa. According to the etching test with $CF_4-O_2$ plasma, the etching rate of the yttria film was 1/100 that of quartz, 1/10 that of sintered alumina and comparable to that of sintered yttria.

• 한국세라믹학회지
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• 제53권3호
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• pp.317-324
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• 2016

Continued miniaturization and increasingly exact requirements for thin film deposition in the semiconductor industry is driving the search for new effective, efficient, selective precursors and processes. The requirements of defect-free, conformal films, and precise thickness control have focused attention on atomic layer deposition (ALD). ALD precursors so far have been developed through a trial-and-error experimental approach, leveraging the expertise and tribal knowledge of individual research groups. Precursors can show significant variation in performance, depending on specific choice of co-reactant, deposition stage, and processing conditions. The chemical design space for reactive thin film precursors is enormous and there is urgent need for the development of computational approaches to help identify new ligand-metal architectures and functional co-reactants that deliver the required surface activity for next-generation thin-film deposition processes. In this paper we discuss quantum mechanical simulation (e.g. density functional theory, DFT) applied to ALD precursor reactivity and state-of-the-art automated screening approaches to assist experimental efforts leading toward optimized precursors for next-generation ALD processes.

• 한국세라믹학회지
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• 제45권9호
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• pp.567-571
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• 2008

The properties of a grown film by the chemical vapor deposition process depend on the deposition temperature because the deposition mechanism of the CVD film is controlled by the deposition temperature. The preferred orientation of the zrC film changed from (111) to (220) or (200) with an increase of the deposition temperature. The grain size of the ZrC film changes from $0.8{\mu}m$ to $2.5{\mu}m$ in the range of 1350 to $1500^{\circ}C$. The hardness of the deposited ZrC film depended on the preferred orientation and the grain size. The hardness of the ZrC film deposited at $1400^{\circ}C$ was 31 GPa.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.356-356
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• 2007

Plasma immersion ion beam deposition (PIIBD) technique is a cost-effective process for the deposition of diamond like carbon thin film, the possible solid lubricant on large surface and a complex shape. We used PIIB process for the preparation of DLC thin film on $Al_2O_3$ with deposition conditions of deposition temperature range $200^{\circ}C$, working gas pressure of 1.310-1Pa. DLC thin films were coated by $C_2H_2$ ion beam deposition on $Al_2O_3$ after the ion bombardment of SiH4 as the bonding layer. Energetic bombardment of $C_2H_2$ ions during the DLC deposition to ceramic materials generated mixed layers at the DLC-Si interface which enhanced the interface to be highly bonded. Wear test showed that the low coefficient of friction of around 0.05 with normal load 2.9N and proved the advantage of the low energy ion bombardment in PIIBD process which improved the tribological properties of DLC thin film coated alumina ceramic. Furthermore, PIIBD was recognized as a useful surface modification technique for the deposition of DLC thin film on the irregular shape components, such as molds, and for the improvement of wear and adhesion problems of the DLC thin film, high temperature solid lubricant.

• 한국산학기술학회논문지
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• 제16권12호
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• pp.8679-8683
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• 2015

세라믹은 고온에서 뛰어난 내마모성, 내부식성을 가지기 때문에 산업적 응용에 있어서 널리 사용된다. 세라믹은 금속과 비교해서 고온에서 더 큰 강도를 가지고 있고, 더 낮은 열전도도 및 열팽창 계수를 가진다. 그러나, 세라믹이 가진 취성의 성질은 전기전자산업과 고온에서의 구조적 적용에의 넓은 적용을 제한한다. Ti 활성금속과 STS304를 IBAD 기술을 이용해서 동시에 증착시켜 STS304 스테인레스강에 $Al_2O_3$(알루미나)의 브레이징 접합강도에 어떤 영향을 미치는지 알아보았으며, 시험편들은 Ti 타겟과 Ti+ STS304 타겟 두 종류를 이용하여 두께를 변화시켜가며 증착하였다. 브레이징 접합을 위한 삽입금속으로는 일반적으로 사용되는 Ag-Cu 공정조성의 합금이 사용되었다. 브레이징 접합품의 강도는 Ag-Cu 삽입금속과 알루미나 사이의 반응층의 두께와 반응 생성물 조직에 의해 결정되며, 본 실험에서는 계면 반응의 메커니즘을 보다 구체화하고 계면 반응에 의한 경사기능성의 접합계면을 더욱 향상시키는 결과를 얻고자 한다.

• 한국세라믹학회지
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• 제52권4호
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• pp.284-289
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• 2015

This study examined carbon layer coating on silicon carbide (SiC) fibers by utilizing solid-state and wet chemistry routes to confer toughness to the fiber-reinforced ceramic matrix composites, as an alternative to the conventional pyrolytic carbon (PyC) interphase layer. Electrophoretic deposition (EPD) of carbon black nanoparticles using both AC and DC current sources, and the vacuum infiltration of phenolic resin followed by pyrolysis were tested. Because of the use of a liquid phase, the vacuum infiltration resulted in more uniform and denser carbon coating than the EPD routes with solid carbon black particles. Thereafter, vacuum infiltration with controlled variation in phenolic resin concentration, as well as the iterations of infiltration steps, was improvised to produce a homogeneous carbon coating having a thickness of several hundred nanometers on the SiC fiber. Conclusively, it was demonstrated that the carbon coating on the SiC fiber could be achieved using a simpler method than the conventional chemical vapor deposition technique.

• 한국전기전자재료학회논문지
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• 제26권1호
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• pp.6-12
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• 2013

Aerosol deposition(AD) coating that enable fabricate films at low temperature have begun to be widely researched for the integration of ceramics as well to realize high-speed deposition rates. For application of ceramic thick film by AD to display and electronic ceramic industry, fabrication of dense structure with a no cracking is required. In this study, to fabricate dense ceramic thick film, the effect of crystal phase of starting powder was investigated. For this study, amorphous and crystalline $SiO_2$ powders were used as starting powders. Two types of $SiO_2$ powders were deposited on glass substrate by AD. In the case of amorphous $SiO_2$ powder, the deposited films had extremely incompact and opaque layer, irrespective of particle size. In contrast to amorphous powder, in the case of crystalline powder, porous structure layer and dense microstructure with no cracking layer were fabricated depending on the particle size. The optimized starting powder size for dense coating layer was $1{\sim}2{\mu}m$. The transmittance of film reached a maximum of 76% at 800 nm.

• 한국세라믹학회지
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• 제39권5호
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• pp.517-522
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• 2002

본 연구에서는 PVD 공정으로 Si 양자점 형성시 증착조건의 변화가 증착된 양자점 크기와 분포에 미치는 영향을 Monte Carlo법을 응용한 전산모사를 통하여 정량적으로 분석하였다. 전산모사시 PVD 공정에서 일반적으로 제어가 가능한 기판온도, 증착시간, 가스압력과 타겟-기판거리를 공정변수로 선택하였다. 계산 겨로가 증착속도가 0.05 nm/sec이고 기판온도 490${\circ}$, 증착시간 7 sec, 가스압력 3 mTorr, 타겟-기판거리가 8 cm일때 증착 밀도가 $1{\times}10^{12}cm^{-2}$인 Si 양자점 형성이 가능할 것으로 예측되었다.

• 한국전기전자재료학회논문지
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• 제37권2호
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• pp.119-132
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• 2024

Dielectric ceramic capacitors present high output power density due to the fast energy charge and discharge nature of dielectric polarization. By forming dense ceramic films with nano-grains through the Aerosol Deposition (AD) process, dielectric ceramic capacitors can have high dielectric breakdown strength, high energy storage density, and leading to high power density. Dielectric capacitors fabricated by AD process are expected to meet the increasing demand in applications that require not only high energy density but also high power output in a short time. This article reviews the recent progress on the dielectric ceramic capacitors with improved energy storage properties through AD process, including energy storage capacitors based on both leadbased and lead-free dielectric ceramics.

• 한국전기전자재료학회논문지
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• 제27권12호
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• pp.809-814
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• 2014

Spinel thin films were prepared by the spin spray technique to develop new thermal imaging materials annealed at low temperature for uncooled microbolometer applications. The spinel thin films were deposited from $[(Ni_{0.30}Co_{0.33}Mn_{0.37})_{1-x}Cu_x]_3O_4$ ($0.1{\leq}x{\leq}0.2$) solutions and then annealed at $400^{\circ}C$ for 1 h in argon. Effects of Cu content (x) and deposition time on the electrical properties of the annealed films were investigated. With increasing deposition time, the resistivity of the annealed films increased. For the annealed films deposited for 1 min, the resistivity of x=0.15 films was lower than that of x=0.1 films due to the different grain sizes. The high temperature coefficient of resistance (TCR) of the annealed films could be obtained at temperature below $50^{\circ}C$. Typically, the resistivity of $127{\Omega}{\cdot}cm$ and TCR of -5.69%/K at $30^{\circ}C$ were obtained for x=0.1 films with deposition time of 1 min annealed at $400^{\circ}C$ for 1 h in argon.