• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 추계학술대회 논문집
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• pp.112-115
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• 2000

In this work the results of the systematic investigations on the effect of organic addition by using polymer compound as starting materials on the superconducting properties of YBCO electrophoretic deposited films on silver substrate are presented. The characteristics of the films were examined by X-ray diffraction and SEM observation. Our results show that the adhesion and microstructure of these films are sensitive to the nature of polymer compounds and sintering conditions (electrophoretic deposition, drying and heat-treatment procedures). To develop optimum microstructures for samples processed in this manner it is necessary to have an understanding of how these processes affect the microstructure and hence the properties of ceramic superconductors.

• The Korean Journal of Ceramics
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• 제6권1호
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• pp.15-20
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• 2000

Thick inorganic-organic hybrid films were prepared on ITO-coated glass substrates by the electrophoretic sol-gel deposition of polyphenylsilsesquioxane particles. The morphology of the deposited films changed from the aggregate of the spherical particles to monolith by heat treatment at temperatures higher than $200^{\circ}C$. Transparency of the films was significantly improved accompanied by the morphological change of the particles. The degree of the morphological change was governed by two factors; maximum heat treatment temperature and heating rate. Transparent thick films of ca. 3$\mu\textrm{m}$ in thickness were obtained only by heat treatment at $400^{\circ}C$ for 2h with rapid heating from room temperature to $400^{\circ}C$. These films obtained were strongly adhered to the ITO-coated glass substrates and has a very smooth surface.

• 한국진공학회지
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• 제5권1호
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• pp.62-66
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• 1996

$(Ba_{1-x}Sr_xTiO_3$ (BST) thin films have been grown on Pt-coated MgO by metal -organic chemical vapor deposition. X-ray diffraction results showed that BST films were grown on a Pt/MgO substrate with (100) preferred orientation perpendicular to the surface. The lineawr relationship of P-E curve obtained form hysteresis loop measurement indicated that the BST films had a Curie transitions below room temperature . Films deposited at $900^{\circ}C$ exhibited a smooth and dense microstructure, a dielectric constant of 202, and a dissipation facotr of 0.02 at 100kHz. The leakage current density of the BST films is about $2\times10^{-10} \;A/\textrm{cm}^2$$ at an applied electric field of 0.2 MV/cm. The electrical behavior on the current-voltage characteristics is well explained by the bulk-limited Pool-Frenkel emission.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 춘계학술대회 논문집 반도체 재료 센서 박막재료 전자세라믹스
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• pp.1-4
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• 2004

Polycrystalline CdSe thin films were grown on ceramic substrate using a chemical bath deposition(CBD)method. They were annealed at various temperature and X-ray diffraction patterns were measured by X-ray diffractometer in order to study CdSe polycrystal structure. Using extrapolation method of X-ray diffraction patterns for the CdSe samples annealed in $N_2$ gas at $450^{\circ}C$ it was found hexagonal structure whose lattice parameters $a_0$ and $c_0$ were $4.302{\AA}$ and 7.014 ${\AA}$, respectively. Its grain size was about 0.3 ${\mu}m$. Hall effect on this sample was measured by Van der Pauw method and studied on carrier density and movility depending on temperature. From Hall data, the mobility was likely to be decreased by piezo electric scattering at temperature range of 33K and 200K, and by polar optical scattering at temperature range of 200K and 293K. We measured also spectral response, sensitivity$(\gamma)$, maximum allowable power dissipation and response time on these samples.

• The Korean Journal of Ceramics
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• 제3권3호
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• pp.159-162
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• 1997

Diamond was uniformly nucleated on large area Si(001) substrate (3cm$\times$4cm) using the low pressure magnetoactive microwave plasma chemical vapor deposition. $CH_4/He$ gas mixture was used as source gas in order to obtain high radical density in the nucleation enhancement step. $CH_3$radical density was measured by means of infrared laser absorption spectroscopy. The effect of substrate bias voltage on diamond nucleation was examined. The results showed that a suitable positive bias voltage appled to the substrate with respect to the chamber could enhance diamond nucleation while a negative bias voltages leaded to deposition of only non-diamond phase carbon.

• Bulletin of the Korean Chemical Society
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• 제30권1호
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• pp.92-96
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• 2009

A new precursor [$Zr(acac)_{3}(H_{2}O)_{2}$] was synthesized by Sonochemical technique and used to deposit thin $ZrO_{2}$ film on quartz and ceramic substrate via ultrasonic aerosol assisted chemical vapour deposition (UAACVD) at 300 ${^{\circ}C}$ in oxygen environment followed by annealing of the sample for 2-3 minutes at 500 ${^{\circ}C}$ in nitrogen ambient. The molecular structure of the precursor determined by single crystal X-ray analysis revealed that the molecules are linked through intermolecular hydrogen bonds forming pseudo six and eight membered rings. DSC and TGA/FTIR techniques were used to determine thermal behavior and decomposition temperature of the precursor and nature of evolved gas products. The optical measurement of annealed $ZrO_{2}$ film with tetragonal phase shows optical energy band gap of 5.01 eV. The particle size, morphology, surface structure and composition of deposited films were investigated by XRD, SEM and EDX.

• The Korean Journal of Ceramics
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• 제5권2호
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• pp.131-136
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• 1999

Yttria stabilized zirconia(YSZ) films were deposited on porous NiO substrates and quartz plates by the thermal CVD using $ZrCl_4, YCl_3$ as precursors, and $O_2$ as a reactive gas at atmospheric pressure. The evaporation temperature of $ZrCl_4$ was varied from $250^{\circ}C$ to $550^{\circ}C$ while the temperatures of $YCl_3$ and the substrate were varied from $1000^{\circ}C$ to $1030^{\circ}C$. As the evaporation temperature of $ZrCl_4$ increased, the deposition rate of $ZrO_2$ decreased, contrary to our expectation. As a result of the decreased deposition rate of $ZrO_2$, the yttria content increase. The high evaporation temperature of $ZrCl_4$ makes the well-faceted crystal while the low evaporation temperature leads to the cauliflower-shaped structure. The dependence of the evaporation temperature on the growth rate and the morphological evolution was interpreted by the charged cluster model.

• 한국전기전자재료학회논문지
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• 제34권2호
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• pp.99-104
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• 2021

Ion-beam sputtering (IBS) was used to deposit semiconducting IZTO (indium zinc tin oxide) thin films onto heavily-doped Si substrates using a sintered ceramic target with the nominal composition In0.4Zn0.5Sn0.1O1.5, which could work as a channel layer for oxide TFT (oxide thin film transistor) devices. The crystallization behavior and electrical properties were examined for the films in terms of deposition parameters, i.e. target tilt angle and substrate temperature during deposition. The thickness uniformity of the films were examined using a stylus profilometer. The observed difference in electrical properties was not related to the degree of crystallization but to the deposition temperature which affected charge carrier concentration (n), electrical resistivity (ρ), sheet resistance (Rs), and Hall mobility (μH) values of the films.

• 한국산업융합학회 논문집
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• 제25권6_2호
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• pp.1037-1045
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• 2022

In this study, nanoscale Al₂O3 ceramic particles were used due its exceptionally high hardness characteristics, chemical stability, and wear resistance properties. These nanoparticles will be used to investigate the optimal process conditions for the electro co-deposition of the Ni-Al₂O₃ composite coatings. A Watts bath electrolytic solution of a controlled composition along with a fixed agitation speed was used for this study. Whereas the current density, the pH value, temperature and concentration of the nano Al₂O₃ particles of the electrolyte were designated as the manipulative variables. The experimental design method was based on the orthogonal array to find the optimum processing parameters for the electro co-deposition of Ni-Al₂O₃ composite coatings. The result of confirmation experimental based on the optimal processing condition through the analysis of variance ; EDX analysis found that the ratio of alumina increased to 8.65 wt.% and subsequently the overall hardness increased to 983 Hv. Specially, alumina were evenly distributed on Nickel matrix and particles were embedded more firmly and finely in Nickel matrix.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.319-319
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• 2013

Even though the fabrication methods of metal oxide based thin film capacitor have been well established such as RF sputtering, Sol-gel, metal organic chemical vapor deposition (MOCVD), ion beam assisted deposition (IBAD) and pulsed laser deposition (PLD), an applicable capacitor of printed circuit board (PCB) has not realized yet by these methods. Barium Strontium Titanate (BST) and other high-k ceramic oxides are important materials used in integrated passive devices, multi-chip modules (MCM), high-density interconnect, and chip-scale packaging. Thin film multi-layer technology is strongly demanded for having high capacitance (120 nF/$mm^2$). In this study, we suggest novel multi-layer thin film capacitor design and fabrication technology utilized by plasma assisted deposition and photolithography processes. Ba0.6Sr0.4TiO3 (BST) was used for the dielectric material since it has high dielectric constant and low dielectric loss. 5-layered BST and Pt thin films with multi-layer sandwich structures were formed on Pt/Ti/$SiO_2$/Si substrate by RF-magnetron sputtering and DC-sputtering. Pt electrodes and BST layers were patterned to reveal internal electrodes by photolithography. SiO2 passivation layer was deposited by plasma-enhanced chemical vapor deposition (PE-CVD). The passivation layer plays an important role to prevent short connection between the electrodes. It was patterned to create holes for the connection between internal electrodes and external electrodes by reactive-ion etching (RIE). External contact pads were formed by Pt electrodes. The microstructure and dielectric characteristics of the capacitors were investigated by scanning electron microscopy (SEM) and impedance analyzer, respectively. In conclusion, the 0402 sized thin film multi-layer capacitors have been demonstrated, which have capacitance of 10 nF. They are expected to be used for decoupling purpose and have been fabricated with high yield.