• Journal of the Korean Ceramic Society
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• v.26 no.4
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• pp.539-549
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• 1989

Polycrystalline TiO2 thin films were deposited on Si and Al2O3 substrates by CVD method. Ethyl titanate, Ti(OC2H5)4, was used as a source material for Ti and O, and Ar was used for carrier gas. In the surface chemical reaction controlled deposition condition, the apparent activation energy of 6.74 Kcal/mole was obtained, and the atomic adsorption on substrate surface was proved to be governed by Rideal-Elley mechanism. In the mass transfer controlled deposition condition, the deposition rate was in a good agreement with the result which was calculated by the simple boundary layer theory. It was also observed that TiO2 thin films show different surface morphology according to the different deposition mechanism, which was fixed by deposition conditions. This phenomenon could be well explained by the surface perturbation theory.

• Journal of the Korean institute of surface engineering
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• v.46 no.6
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• pp.258-263
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• 2013

4 mol% Yttria-stabilized zirconia (4YSZ) coatings are fabricated by Air Plasma Spray (APS) and Electron Beam Physical Vapor Deposition (EB-PVD) with top coating of thermal barrier coating (TBC). NiCrAlY based bond coat is prepared as 150 ${\mu}m$ thickness by conventional APS (Air Plasma Spray) method on the NiCrCoAl alloy substrate before deposition of top coating. Each 4YSZ top coating shows different tribological behaviors based on the inherent layer structures. 4YSZ by APS which has splat-stacked structure shows lower friction coefficient but higher wear rate than 4YSZ by EB-PVD which has columnar structure. For 4YSZ by APS, such results are expected due to the sliding wear accompanied with local delamination of splats.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.348-348
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• 2008

In recent, the concept of system-on-package (SOP) for highly integrated multifunctional systems has been paid attention to for the miniaturization and high frequency of electronic devices. In order to realize SOP, co-integration of passive devices, such as capacitors, resistors and inductors, and active devices should be achieved. If ceramic thick films can be grown at room temperature, we expect to be able to overcome many problems in conventional fabrication processes. So, we focused on the aerosol deposition method (ADM) as room temperature fabrication technology. ADM is a novel ceramic coating method based on the Room Temperature Impact Consolidation (RTIC) phenomena. This method has a wide range potential for fabrication of co-integration of passive and active devices. In this paper, I will present the future potential of ADM introducing various ceramic dielectric thick films for the integration of electronic ceramics.

• Ceramist
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• v.23 no.2
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• pp.132-144
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• 2020

Solid oxide fuel cell (SOFC) have attracted much attention due to clean, efficient and environmental-friendly generation of electricity for next-generation energy conversion devices. Recently, many studies have been reported on improving the performance of SOFC electrodes and electrolytes by applying atomic layer deposition (ALD) process, which has advantages of excellent film quality and conformality, and precise control of film thickness by utilizing its unique self-limiting surface reaction. ALD process with these advantages has been shown to provide functional ceramic interfaces for SOFC electrodes and electrolytes. In this article, recent examples of successful functionalization and stabilization on SOFC electrodes and electrolytes by the application of ALD process for realizing high performance SOFC cells are reported.

• Journal of the Korean Ceramic Society
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• v.31 no.10
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• pp.1188-1196
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• 1994

TiN films were deposited onto high speed steel(SKH9) and silicon wafer by plasma-assisted chemical vapor deposition(PACVD) using a TiCl4/N2/H2/Ar gas mixture. The effects of deposition temperature, R.F. power, and H2 concentration on the deposition of TiN were studied. The residual chlorine content and the microhardness of TiN films were also investigated. It was found that TiN films grew with a columnar structure of a strong (200) preferred orientation regardless of the substrate type and the deposition variables. The TiN films consisted of columnar-grains of about 50 to 100 nm in diameter. The columnar grains themselves contained much finer fibrous grains. As deposition temperature increased, the residual chlorine content decreased sharply. R. F. powder enhanced the deposition rate largely. Increasing of H2 concentration had little effect on the residual chlorine.

• Journal of the Korean Ceramic Society
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• v.24 no.6
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• pp.519-526
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• 1987

TiC was deposited onto several substrate steels by the Chemical Vapor Deposition technique from TiCl4-CH4-H2 gas mixtures in the horizontal resistance furnace. Deposition rates and morphologies of the coatings were investigated with the carbon contents. Deposition thickness increased linearly with the deposition time in the Presence of CH4 gas. The various interlayers of coating by EDS and X-ray Diffraction were proved as Cr7C3 and Fe3C. Chromium contents did not affect the preferred orientation of TiC deposit. The deposition was controlled by a mass transport and a surface reaction in case of 1 wt% C-5.25 wt% Cr steel irrespective of deposition temperature.

• Journal of the Korean Ceramic Society
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• v.28 no.1
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• pp.1-10
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• 1991

Zirconium dioxide(ZrO2) thin films have been deposited by chemical vapor deposition technique involving the application of gas mixture of ZrCl4, and H2O into silicon wafers. The relationships between the deposition rate and various reaction parameters such as the deposition time, the gas flow rate, the deposition temperature, and the composition of reactant gases were studied. The film was identified as nearly stoichiometric monoclinic ZrO2. The apparent activation energy is about 19Kcal/mole at surface chemical reaction controlled region. The deposition rate is mainly influenced by the H2O-forming reacting between CO2 and H2.

• Journal of the Korean Society of Propulsion Engineers
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• v.19 no.3
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• pp.83-88
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• 2015

Coating materials used in the electron beam (EB) deposition method, which is being studied as one of the fabrication methods of thermal barrier coating, are exposed to high power electron beam at focused area during the EB deposition. Therefore the coating source for EB process is needed to form as ingot with appropriate density and microstructure to sustain their shape and stable melts status during EB deposition. In this study, we tried to find the optimum powder condition for fabrication of ingot of 8 wt% yttria stabilized zirconia which can be used for EB irradiation. It seems that the ingot, which is fabricated through bi-modal type initial powder mixture which consists of tens of micro and nano size particles, was shown better performance than the ingot which is fabricated using monolithic nanoscale powder when exposed to high power EB.

• Journal of the Korean Ceramic Society
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• v.41 no.5
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• pp.364-369
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• 2004

The barrier and optical properties of AlO$_{x}$ thin films on polycarbonate deposited by Reactive Ion Beam Sputtering (RIBS) were investigated at different oxygen partial pressure. We measured the deposition rate of AlO$_{x}$ thin films. As the oxygen partial pres-sure increased, the deposition rate increased then decreased. The changes of deposition rate are associated with the properties of deposited films. The properties of deposited AlO$_{x}$ thin films were studied using X-ray Photoelectron Spectroscopy (XPS), Scan-ning Electron Microscopy (SEM), and Atomic Force Microscopy (AFM). Optimum deposition parameters were found for fabricat-ing aluminum oxide thin films with high optical transparency for visible light and low Oxygen Transmission Rate (OTR). The optical transmittance of AlO$_{x}$ thin film deposited on polycarbonate (PC) showed the same value of bare PC.bare PC.

• Journal of Ceramic Processing Research
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• v.19 no.6
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• pp.519-524
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• 2018

Carbon/carbon composites (C/C) have been widely studied in the aerospace field because of their excellent thermal shock resistance and specific strength at high temperature. However, they have the problems that is easily oxidized and deteriorated under atmospheric environment. In order to overcome these shortcomings, the CVD coating of ultra-high-temperature ceramics to C/C has become an important technical issue. In this study, thermodynamic calculations were performed to TaC CVD coating on C/C by FactSage 6.2 program. The Ta-C phase diagrams were constructed with the results of thermodynamic calculations in the Ta-C-H-Cl system. Based on the Ta-C phase diagram, the experimental conditions were designed to confirm the deposition of various phases such as TaC single phase, TaC + C and $TaC+Ta_2C$ by varying the composition of Ta/C ratio. The deposited films were found to be in good agreement with the predicted phases.