• Journal of Sensor Science and Technology
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• v.28 no.2
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• pp.101-105
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• 2019

ZnS substrates with excellent transmittance in the mid-infrared region ($3-5{\mu}m$) were prepared using hot pressing instead of conventional chemical vapor deposition (CVD). Diamond-like carbon(DLC) was coated on either one or both sides of the ZnS substrates to improve their mechanical properties and transmittance. More specifically DLC was coated using CVD with an Ar and $C_2H_2$ mixed gas, and Ge was used as the bonding layer. During CVD, the bias voltage was fixed to 500 V and analyzed by Fourier transform infrared spectroscopy (FT-IR), nanoindenter, scanning electron microscope and energy dispersive spectrometry. Results of hardness analysis using the nanoindenter, showed that DLC coating increased from 5.9 to 17.7 GPa after deposition. The FT-IR spectroscopy results showed that, in the mid-infrared region ($3-5{\mu}m$), the average transmittance of the samples with DLC coating on one and both sides increased by approximately 6% and approximately 11.2% respectively. In conclusion, the DLC coating improved the durability and transmittance of the ZnS substrates.

• Korean Journal of Materials Research
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• v.28 no.2
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• pp.75-81
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• 2018

An ultra-high temperature ceramic, tantalum carbide, has received much attention for its favorable characteristics: a superior melting point and chemical compatibility with carbon and other carbides. One drawback is the high temperature erosion of carbon/carbon (C/C) composites. To address this drawback, we deposited TaC on C/C with silicon carbide as an intermediate layer. Prior to the TaC deposition, the $TaCl_5-C_3H_6-H_2$ system was thermodynamically analyzed with FactSage 6.2 and compared with the $TaCl_5-CH_4-H_2$ system. The results confirmed that the $TaCl_5-C_3H_6-H_2$ system had a more realistic cost and deposition efficiency than $TaCl_5-CH_4-H_2$. A dense and uniform TaC layer was successfully deposited under conditions of Ta/C = 0.5, $1200^{\circ}C$ and 100 torr. This study verified that the thermodynamic analysis is appropriate as a guide and prerequisite for carbide deposition.

• Journal of the Korean Ceramic Society
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• v.50 no.6
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• pp.551-556
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• 2013

AlN films with c-axis orientation and thermal conductivity characteristics were deposited by using Pulsed Laser Deposition and the films were characterized by changing the deposition conditions. In particular, we investigated the optimal conditions for the application of a heat sinking plane AlN thin film. Epitaxial AlN films were deposited on sapphire ($c-Al_2O_3$) single crystals by pulsed laser deposition (PLD) with an AlN target. AlN films were deposited at a fixed pressure of $2{\times}10^{-5}$ Torr, while the substrate temperature was varied from 500 to $700^{\circ}C$. According to the experimental results of the growth temperature of the thin film, AlN thin films were confirmed with a highly c-axis orientation, maximum grain size, and high thermal conductivity at $650^{\circ}C$. The thermal conductivity of the AlN thin film was found to increase compared to bulk AlN near the band gap value of 6.2 eV.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.1
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• pp.17-22
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• 2017

Effects of pH value and deposition time on the electrical properties of (NMC) Ni-Mn-Cu-O and (NMCC) Ni-Mn-Cu-Co-O thin films were investigated. The NMC and NMCC films were prepared by spin spray method. The crystal structure and thickness of the annealed films were changed by the pH value and deposition time, respectively. A single phase of cubic spinel structure was confirmed for the annealed films deposited from solutions with pH 7.6. The resistivity of the annealed films was affected by the crystal structure and microstructure. The TCR (temperature coefficient of resistance) was dependent on the $Mn^{3+}/Mn^{4+}$. Typically, the resistivity of $70.5{\Omega}{\cdot}cm$ and TCR of -3.56%/K at room temperature were obtained for NMCC films deposited from solutions with pH 7.6 for 5 min, and annealed at $450^{\circ}C$ for 3 h.

• Proceedings of the Korean Ceranic Society Conference
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• 2003.04a
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• pp.143.1-143
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• 2003

• Proceedings of the Korean Vacuum Society Conference
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• 1996.06a
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• pp.72-72
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• 1996

• Ceramist
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• v.12 no.3
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• pp.22-29
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• 2009

• Ceramist
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• v.3 no.1
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• pp.53-59
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• 2000

• Korean Journal of Materials Research
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• v.22 no.12
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• pp.664-668
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• 2012

ZnO nanorods were successfully fabricated on Zn foil by chemical bath deposition (CBD) method. The ZnO precursor concentration and immersion time affected the surface morphologies, structure, and electrical properties of the ZnO nanorods. As the precursor concentration increased, the diameter of the ZnO nanorods increased from ca. 50 nm to ca. 150 nm. The thicknesses of the ZnO nanorods were from ca. $1.98{\mu}m$ to ca. $2.08{\mu}m$. ZnO crystalline phases of (100), (002), and (101) planes of hexagonal wurtzite structure were confirmed by XRD measurement. The fabricated ZnO nanorods showed a photoluminescene property at 380 nm. Especially, the ZnO nanorods deposited for 6 h in solution with a concentration of 0.005M showed a stronger (101) peak than they did (100) or (002) peaks. In addition, these ZnO nanorods showed a good electrical property, with the lowest resistance among the four samples, because the nanorods were densely in contact and relatively without pores. Therefore, a ZnO nanorod substrate is useful as a highly sensitive biochip substrate to detect biomolecules using an electrochemical method.

• Journal of the Korean Ceramic Society
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• v.42 no.2 s.273
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• pp.117-122
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• 2005

Electron Beam Physical Vapor Deposition (EB-PVD) is a typical technology for thermal barrier coating with Yttria Stabilized Zirconia (YSZ) on aero gas turbine engine. In this study EB-PVD method was used to fabricate dense YSZ film on NiO-YSZ as a electrolyte of Solid Oxide Fuel Cell (SOFC). Dense YSZ films of -10 $\mu$m thickness showed nano surface structure depending on deposition temperature. Electrical conductivities of YSZ film and electric power density of the single cell were evaluated after screen- printing $LaSrCoO_3$ as a cathode.