• The Journal of the Institute of Internet, Broadcasting and Communication
• /
• v.15 no.2
• /
• pp.189-194
• /
• 2015

In this study, the heat radiation performance of COB LED according to the structure of thermoelectric device were compared. Thermoelectric device of the sheet copper structure and ceramic structure were used for bonding with the heating part of the COB LED. The temperature distribution in the bonding part of the thermoelectric device of COB LED was measured with a contact-type thermometer. The temperature variation of the thermoelectric device was measured by inputting the currents of 0.1A, 0.3A, 0.5A, and 0.7A. When 0.7A was applied, the temperature of the bonding part where there was a heat aggregation phenomenon of the COB LED was $59^{\circ}C$ for thermoelectric device of the sheet copper structure and $67^{\circ}C$ for the thermoelectric device of the ceramic structure. Therefore, the sheet copper thermoelectric device whose temperature was lower by $9^{\circ}C$ showed better heat radiation performance than those of the ceramic structure.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.28 no.12
• /
• pp.802-807
• /
• 2015

This paper describes the development of a piezoelectric level switch, which aims to effectively monitor the level status in high ambient temperatures. In order to adjust the impedance near the resonant frequency and temperature characteristics, the effect of the case and backing layer materials on its performance was analyzed using the finite element method (FEM). The suggested prototype new level switch has three heat-sink plates attached to SUS bar of 230 mm long, and case of PEEK which contains PZT sensing part. To illustrate the validity of this level switch, 10 samples are prepared and investigated the sensing performance through the high and low temperature ambient.

• Journal of Powder Materials
• /
• v.26 no.5
• /
• pp.395-404
• /
• 2019

Aluminum nitride (AlN) has excellent electrical insulation property, high thermal conductivity, and a low thermal expansion coefficient; therefore, it is widely used as a heat sink, heat-conductive filler, and heat dissipation substrate. However, it is well known that the AlN-based materials have disadvantages such as low sinterability and poor mechanical properties. In this study, the effects of addition of various amounts (1-6 wt.%) of sintering additives $Y_2O_3$ and $Sm_2O_3$ on the thermal and mechanical properties of AlN samples pressureless sintered at $1850^{\circ}C$ in an $N_2$ atmosphere for a holding time of 2 h are examined. All AlN samples exhibit relative densities of more than 97%. It showed that the higher thermal conductivity as the $Y_2O_3$ content increased than the $Sm_2O_3$ additive, whereas all AlN samples exhibited higher mechanical properties as $Sm_2O_3$ content increased. The formation of secondary phases by reaction of $Y_2O_3$, $Sm_2O_3$ with oxygen from AlN lattice influenced the thermal and mechanical properties of AlN samples due to the reaction of the oxygen contents in AlN lattice.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.02a
• /
• pp.323-323
• /
• 2013

High power light-emitting diodes (LEDs) are widely used in many device applications due to its ability to operate at high power and produce high luminance. However, releasing the heat accumulated in the device during operating time is a serious problem that needs to be resolved to ensure high optical efficiency. Ceramic or Aluminium base metal printed circuit boards are generally used as integral parts of communication and power devices due to its outstanding thermal dissipation capabilities as heat sink or heat spreader. We investigated the characterisation of electroless plating of Ni-B film according to plating bath temperature, ranging from $50^{\circ}C$ to $75^{\circ}C$ on Ag paste/anodised Al ($Al_2O_3$)/Al substrate to be used in metal PCB for high power LED packing systems. X-ray diffraction (XRD), Field-Emission Scanning Electron Microscopy (FE-SEM) and X-ray Photoelectron Spectroscopy (XPS) were used in the film analysis. By XRD result, the structure of the as deposited Ni-B film was amorphous irrespective of bath temperature. The activation energy of electroless Ni-B plating was 59.78 kJ/mol at the temperature region of $50{\sim}75^{\circ}C$. In addition, the Ni-B film grew selectively on the patterned Ag paste surface.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.31 no.6
• /
• pp.233-239
• /
• 2021

In this study, Ga₂O₃/diamond layers were grown on Si substrates to improve the thermal characteristics of Ga₂O₃ materials. Firstly, diamond thin film was grown on Si substrates by hot-filament chemical vapor deposition. Afterward, Ga₂O₃ layer was grown in the growth temperature range of from 450~600℃ by mist chemical vapor deposition. We found that layer separation happens at the Ga₂O₃/diamond interface at the growth temperature of 500℃. This is attributed to the different thermal expansion coefficient of the mixture of amorphous and crystalline structures during cooling process. Therefore, this study might contribute to the heat-sink-layer bonded power semiconductor applications by stabilizing the thermal properties at Ga₂O₃/diamond interface.