• 한국소성가공학회:학술대회논문집
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• 한국소성가공학회 2000년도 춘계학술대회논문집
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• pp.159-162
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• 2000

Wrinkles and shape distortions are generated during the forming of B-pillar(or center pillar) which is a component of the automobile side-frame. The stretch flanging modes at the joining part of the B-pillar and the roof-rail or the side-still give rise to forming problems when taior-welded blanks are applied to the side-frames. The authors simplified B-pillar lower part to T shaped section to investigate the forming behaviors. Three of die step locations and two of blank types were tested to show the effects of weld line locations and edge conditions on he forming of tailor welded blanks. The heights of body wrinkles and the strain distribution in the stretch flanged area were measured and compared.

• 건축역사연구
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• 제14권1호
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• pp.71-87
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• 2005

4 royal palaces are currently remained from capital city (Seoul) of 'Cho-Sun(朝鮮)' period. In these palaces, 'Main hall of Royal Palace(正殿)' is the center of the Royal Palaces. The 'Main hall of Royal Palace' of the Royal Palace was the best building of that time. Therefore there were many studies about the 'Main hall of Royal Palace'. But these studies were individual studies of these 'Main hall of Royal Palace'. Therefore, this study is to analyze and compare 4 'Main hall of Royal Palace' of the Royal palaces. It is to study the proportion regarding the Diameter of the pillar, the Height, the pillar and pillar Interval's Distance, and the arrangement of 'Kong-Po(bracket sets)'. With these studies, it is to prove that the 'Main hall of Royal Palace' is the building which high construction technique of this time is expressed. Result of this study is as followings; First, the proportion of pillar height(H) to its diameter(D) average from H=8.0 to 8.5D. Only the Myeong-Jeong-Jeon omitted the 'Go-Ju(高柱)' in the 'Toi-Kan (退間)' to place Ea-Jwa(御座). Second, Second, the proportion of diameter of the pillar of 'Eoi-Bu-Pyeong-Ju(外部平柱)' and 'Nae-Jin-Go-Ju(內陣高柱)' average D1(Diameter of 'Eoi-Bu-Pyeong-Ju') =0.91D2 (Diameter of 'Nae-Jin-Go-Ju'). In regards to the height, the single floor 'Main hall of Royal Palace' and double floor 'Main hall of Royal Palace' seems to be different. The height proportion of the double floor 'Main hall of royal palace' is H1(Height of 'Eoi-Bu-Pyeong-Ju')=0.34H2(Height of 'Nae-Jin-Go-Ju') and single floor 'Main hall of Royal Palace' has a proportion of H1=0.62H2. Third, in Geun-Jeong-Jeon, with the proportion of height and diameter of the pillar, interval's distance between pillars and diameter, the pillar interval distance and height, of 'Ea-kan(御間)' from the 'Toi-Kan' is different from 'Main hall of Royal Palace'. This is because the structure of 'Toi-Kan' of Geun-Jeong-Jeon is not stable. In order to reinforce this, 'Gui-Go-Ju(隅高柱)' of the Geun-Jeong-Jeon jut out $4{\sim}7%$ more compared to In-Jeong-Jeon. Fourth, when comparing double floor 'Main hall of royal palace' of Geun-Jeong-Jeon and In-Jeong-Jeon, based on distance of 'Eoi-Bu-Pyeong-Ju' and 'Nae-Jin-Go-Ju' of lower level, the 'Sang-Bu-Pyeong-Ju(上部平柱)' of Geun-Jeong-Jeon jut out $4{\sim}7%$ more compared to the In-Jeong-Jeon and also It becomes thicker. Fifth, the arrangement of 'Kong-Po' on the front row of 'Gan(間)' had to do with the change of side 'Gan'. Even though the Geun-Jeong-Jeon and the In-Jeong-Jeon were double floors, the arrangement of the 'Kong-Po' is different because the number of side bay is different.

• 반도체디스플레이기술학회지
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• 제13권3호
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• pp.45-50
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• 2014

In this paper, we propose a super-junction MOSFET (SJ MOSFET) fabricated through a simple pillar forming process by varying the Si epilayer thickness and doping concentration of pillars using SILVACO TCAD simulation. The design of the SJ MOSFET structure is presented, and the doping concentration of pillar, breakdown voltage ($V_{BR}$) and drain current are analyzed. The device performance of conventional Si planar metal-oxide semiconductor field-effect transistor(MOSFET), Si SJ MOSFET, and SiGe SJ MOSFET was investigated. The p- and n-pillars in Si SJ MOSFET suppressed the punch-through effect caused by drain bias. This lead to the higher $V_{BR}$ and reduced on resistance of Si SJ MOSFET. An increase in the thickness of Si epilayer and decrease in the former is most effective than the latter. The implementation of SiGe epilayer to SJ MOSFET resulted in the improvement of $V_{BR}$ as well as drain current in saturation region, when compared to Si SJ MOSFET. Such a superior device performance of SiGe SJ MOSFET could be associated with smaller bandgap of SiGe which facilitated the drift of carriers through lower built-in potential barrier.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2011년도 추계학술대회
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• pp.903-906
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• 2011

고밀도집적을 위한 구리기둥주석범프(CPTB)의 제작공정에 흔히 전기도금과 무전해도금이 적용된다. CPTB는 약 $100{\mu}m$ 정도의 피치를 갖도록 먼저 구리도금 층을 전착시킨 다음, 구리의 산화 억제를 위하여 구리기둥 주위에 주석을 입혀 제작한다. 이 과정에서 구리도금 층 두께를 균일하게 형성하는 일은 매우 민감하고 어렵지만 중요한 일이다. 이를 위하여 구리도금 전극 사이에 전류분포 제어를 위한 절연 막(절연게이트)을 형성하여 도금 층의 두께분포를 조절하는 실험을 하였다. 원통형 도금 조에서 중심부를 열어 전류를 흘려주고, 그 외 부분은 가장자리 끝까지 막고 전류를 차단하여 두께분포 변화를 확인하였다.

• 열처리공학회지
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• 제23권6호
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• pp.301-308
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• 2010

A steel with chemical composition, 0.22% C, 0.25% Si, 1.26% Mn, 0.22% Cr, 0.04% Ti, 0.0042% B, and a microstructure of ferrite and spheroidized cementite has been press-formed to automotive center pillar followed by local-hardening heat-treatment. Hardness, tensile properties, fractography, microstructure and surface roughness of local-hardening heat-treated automotive center pillar have been examined. The directly heated and quenched area had fully martensitic structure with Vickers hardenss in the range of 500 to 510. The heat affected area close to the directly heated area showed dual-phase structure of ferrite and martensite. The width of the heat-treated and heat-affected areas after the local-hardening heat treatment was ranging from 32 mm to 50 mm. The surface of the local-hardening heat-treated center pillar revealed some temper color as a consequence of the oxidation during the heat treatment, but the surface roughness was not affected by the local-hardening heat treatment.

• 터널과지하공간
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• 제28권2호
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• pp.170-185
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• 2018

단층대에 위치한 근접병설터널에 대하여 단층의 폭과 경사, 단층암의 물성을 달리한 수치해석과 모형실험을 통해 단층이 터널 안정성에 미치는 영향을 알아보았다. 병설터널 사이에 존재하는 필라의 강도/응력비를 구할 때는 필라 중앙부의 응력, 필라 전체의 평균응력, 필라 좌우단부의 응력을 각각 적용하였는데, 이중 마지막 방법은 단층대의 유무에 관계없이 터널 안정성의 보수적 평가에 적합하였고 터널 굴착시점을 실시간적으로 반영하였다. 필라 좌우단부의 응력을 적용하여 구한 강도/응력비는 단층의 폭과 경사가 커질수록, 단층암의 물성이 연약할수록 감소하는 경향을 보였다. 축소모형실험에서 단층을 포함한 모형은 불포함 모형에 비해 균열개시압력이 작았고, 단층의 폭이 큰 모형일수록 터널 안정성은 낮게 나타났다. 단층은 터널의 파괴거동에도 큰 영향을 미쳤는데, 단층이 없는 모형에서는 필라의 좌우하단부와 양쪽터널 측벽부에서 수평방향의 균열이 발생하였지만, 단층을 포함한 모형에서는 필라부 단층대에서 경사진 균열이 발생하였다.

• 한국산업정보학회논문지
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• 제17권7호
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• pp.43-50
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• 2012

본 논문에서는 차량용 센터필러 부품의 성형공정에서 발생하는 스프링백 문제를 해결하기 위한 일환으로 기존 부품의 금형보정이력 정보를 체계적으로 데이터베이스화하였다. 기존 부품의 경우 과도한 스프링백 발생에 의한 형상정밀도 불량을 해결하기 위하여 3차의 금형 보정을 현장기술자의 작업에 의하여 수행하였으나, 보정값이 정량화되어 있지 못한 문제가 있었다. 본 논문에서는 기존 금형 보정과정의 결과를 유한요소해석을 통하여 정량적으로 분석하고 보정이 의도대로 이루어졌는지를 평가하는 데이터베이스를 구축하였다. 구축된 데이터베이스 정보를 활용하여 유사부품의 금형설계에 활용하였으며, 결과적으로 보정횟수를 감소시키고도 제품을 성공적으로 성형할 수 있었다.

• 마이크로전자및패키징학회지
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• 제23권4호
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• pp.69-77
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• 2016

We propose nano-scale Cu direct bonding technology using ultra-high density Cu nano-pillar (CNP) with for high stacking yield exascale 2.5D/3D integration. We clarified the joining mechanism of nano-scale Cu direct bonding using CNP. Nano-scale Cu pillar easily bond with Cu electrode by re-crystallization of CNP due to the solid phase diffusion and by morphology change of CNP to minimize interfacial energy at relatively lower temperature and pressure compared to conventional micro-scale Cu direct bonding. We confirmed for the first time that 4.3 million electrodes per die are successfully connected in series with the joining yield of 100%. The joining resistance of CNP bundle with $80{\mu}m$ height is around 30 m for each pair of $10{\mu}m$ dia. electrode. Capacitance value of CNP bundle with $3{\mu}m$ length and $80{\mu}m$ height is around 0.6fF. Eye-diagram pattern shows no degradation even at 10Gbps data rate after the lamination of anisotropic conductive film.

• Asian Journal for Public Opinion Research
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• 제4권1호
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• pp.1-30
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• 2016

• 소성∙가공
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• 제24권5호
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• pp.354-360
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• 2015

AHSS (Advanced High Strength Steels) has been increasingly employed by global automotive OEMs in order to satisfy strengthened regulations and reduce weight for fuel efficiency. Hot stamping using boron steels in AHSS increases not only formability but also strength. The typical hot-stamped automotive part is the center pillar that is critical for vehicle side impact. However, the hot-stamped part can be risky for the passenger safety caused by brittle fracture under a vehicle collision. The high power diode laser is suitable for the heat treatment giving AHSS increased elongation that prevents brittle fracture in car crash. Therefore, local softening by laser heat treatment for energy absorption area on the hot-stamped part improves crash-worthiness.