• Title/Summary/Keyword: Center for nanotechnology in society

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Strategies in Protein Immobilization on a Gold Surface

  • Park, Jeho;Kim, Moonil
    • Applied Science and Convergence Technology
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    • v.24 no.1
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    • pp.1-8
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    • 2015
  • Protein immobilization on a gold surface plays an important role in the usefulness of biosensors that utilize gold-coated surfaces such as surface plasmon resonance (SPR), quartz crystal microbalance (QCM), etc. For developing high performance biosensors, it is necessarily required that immobilized proteins must remain biologically active. Loss of protein activity and maintenance of its stability on transducer surfaces is directly associated with the choice of immobilization methods, affecting protein-protein interactions. During the past decade, a variety of strategies have been extensively developed for the effective immobilization of proteins in terms of the orientation, density, and stability of immobilized proteins on analytical devices operating on different principles. In this review, recent advances and novel strategies in protein immobilization technologies developed for biosensors are briefly discussed, thereby providing an useful information for the selection of appropriate immobilization approach.

Advanced Microwave Plasma Technology for Liquid Treatment

  • Toyoda, Hirotaka;Takahashi, T.;Takada, N.
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.121.1-121.1
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    • 2014
  • Recently, much attention has been given to plasma production under liquid and its applications [1]. However, most of plasma production techniques reported so far utilize high voltage dc, ac, rf or microwave power [2], where damage to discharge electrodes and small discharge volume are remained issues. As an alternative of plasma production method under liquid, we have proposed pulsed microwave excited plasma using slot antenna, where damage to the slot electrode can be minimized and plasma volume can be increased. We have also reported improvement of treatment efficiency with use of reduced-pressure condition during the discharge [3]. To realize low pressure conditions in liquid, various alternative technique can be considered. One possible technique is simultaneous injection of microwave power and ultrasonic wave. Ultrasonic wave induces pressure fluctuation with the wave propagation and is so far used for cavitation production in the water. We propose utilization of reduced pressure induced by ultrasonic cavitation for improvement of the plasma production. Correlation between the plasma production and the ultrasonic power will be discussed.

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Effect of N2/Ar flow rates on Si wafer surface roughness during high speed chemical dry thinning

  • Heo, W.;Lee, N.E.
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.08a
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    • pp.128-128
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    • 2010
  • In this study, we investigated the evolution and reduction of the surface roughness during the high-speed chemical dry thinning process of Si wafers. The direct injection of NO gas into the reactor during the supply of F radicals from NF3 remote plasmas was very effective in increasing the Si thinning rate, due to the NO-induced enhancement of the surface reaction, but resulted in the significant roughening of the thinned Si surface. However, the direct addition of Ar and N2 gas, together with NO gas, decreased the root mean square (RMS) surface roughness of the thinned Si wafer significantly. The process regime for the increasing of the thinning rate and concomitant reduction of the surface roughness was extended at higher Ar gas flow rates. In this way, Si wafer thinning rate as high as $20\;{\mu}m/min$ and very smooth surface roughness was obtained and the mechanical damage of silicon wafer was effectively removed. We also measured die fracture strength of thinned Si wafer in order to understand the effect of chemical dry thinning on removal of mechanical damage generated during mechanical grinding. The die fracture strength of the thinned Si wafers was measured using 3-point bending test and compared. The results indicated that chemical dry thinning with reduced surface roughness and removal of mechanical damage increased the die fracture strength of the thinned Si wafer.

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Morphology Control of Nanostructured Graphene on Dielectric Nanowires

  • Kim, Byeong-Seong;Lee, Jong-Un;Son, Gi-Seok;Choe, Min-Su;Lee, Dong-Jin;Heo, Geun;Nam, In-Cheol;Hwang, Seong-U;Hwang, Dong-Mok
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.375-375
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    • 2012
  • Graphene is a sp2-hybridized carbon sheet with an atomic-level thickness and a wide range of graphene applications has been intensely investigated due to its unique electrical, optical, and mechanical properties. In particular, hybrid graphene structures combined with various nanomaterials have been studied in energy- and sensor-based applications due to the high conductivity, large surface area and enhanced reactivity of the nanostructures. Conventional metal-catalytic growth method, however, makes useful applications difficult since a transfer process, used to separate graphene from the metal substrate, should be required. Recently several papers have been published on direct graphene growth on the two dimensional planar substrates, but it is necessary to explore a direct growth of hierarchical nanostructures for the future graphene applications. In this study, uniform graphene layers were successfully synthesized on highly dense dielectric nanowires (NWs) without any external catalysts. We also demonstrated that the graphene morphology on NWs can be controlled by the growth parameters, such as temperature or partial pressure in chemical vapor deposition (CVD) system. This direct growth method can be readily applied to the fabrication of nanoscale graphene electrode with designed structures because a wide range of nanostructured template is available. In addition, we believe that the direct growth growth approach and morphological control of graphene are promising for the advanced graphene applications such as super capacitors or bio-sensors.

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Analytical Pinning-Voltage Model of a Pinned Photodiode in a CMOS Active Pixel Sensor

  • Lee, Sung-Sik;Nathan, Arokia;Lee, Myung-Lae;Choi, Chang-Auck
    • Journal of Sensor Science and Technology
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    • v.20 no.1
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    • pp.14-18
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    • 2011
  • An analytical pinning-voltage model of a pinned photodiode has been proposed and derived. The pinning-voltage is calculated using doping profiles based on shallow- and exponential-junction approximations. Therefore, the derived pinning-voltage model is analytically expressed in terms of the process parameters of the implantation. Good agreement between the proposed model and simulated results has been obtained. Consequently, the proposed model can be used to predict the pinning-voltage and related performance of a pinned photodiode in a CMOS active pixel sensor.

Optical Probing of Electronic Interaction between Graphene and Hexagonal Boron Nitride (hBN)

  • Ahn, Gwanghyun;Kim, Hye Ri;Ko, Taeg Yeoung;Choi, Kyoungjun;Watanabe, Kenji;Taniguchi, Takashi;Hong, Byung Hee;Ryu, Sunmin
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.213-213
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    • 2013
  • Even weak van der Waals (vdW) adhesion between two-dimensional solids may perturbtheir various materials properties owing to their low dimensionality. Although the electronic structure of graphene has been predicted to be modified by the vdW interaction with other materials, its optical characterization has not been successful. In this report, we demonstrate that Raman spectroscopy can be utilized to detect a few % decrease in the Fermi velocity ($v_F$) of graphene caused by the vdW interaction with underlying hexagonal boron nitride (hBN). Our study also establishes Raman spectroscopic analysis which enables separation of the effects by the vdW interaction from those by mechanical strain or extra charge carriers. The analysis reveals that spectral features of graphene on hBN are mainly affected by change in vF and mechanical strain, but not by charge doping unlike graphene supported on $SiO_2$ substrates. Graphene on hBN was also found to be less susceptible to thermally induced hole doping.

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Application of black phosphorus nanodots to live cell imaging

  • Shin, Yong Cheol;Song, Su-Jin;Lee, Yu Bin;Kang, Moon Sung;Lee, Hyun Uk;Oh, Jin-Woo;Han, Dong-Wook
    • Biomaterials Research
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    • v.22 no.4
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    • pp.352-359
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    • 2018
  • Background: Black phosphorus (BP) has emerged as a novel class of nanomaterials owing to its unique optical and electronic properties. BP, a two-dimensional (2D) nanomaterial, is a structure where phosphorenes are stacked together in layers by van der Waals interactions. However, although BP nanodots have many advantages, their biosafety and biological effect have not yet been elucidated as compared to the other nanomaterials. Therefore, it is particularly important to assess the cytotoxicity of BP nanodots for exploring their potentials as novel biomaterials. Methods: BP nanodots were prepared by exfoliation with a modified ultrasonication-assisted solution method. The physicochemical properties of BP nanodots were characterized by transmission electron microscopy, dynamic light scattering, Raman spectroscopy, and X-ray diffractometry. In addition, the cytotoxicity of BP nanodots against C2C12 myoblasts was evaluated. Moreover, their cell imaging potential was investigated. Results: Herein, we concentrated on evaluating the cytotoxicity of BP nanodots and investigating their cell imaging potential. It was revealed that the BP nanodots were cytocompatible at a low concentration, although the cell viability was decreased with increasing BP nanodot concentration. Furthermore, our results demonstrated that the cells took up the BP nanodots, and the BP nanodots exhibited green fluorescence. Conclusions: In conclusion, our findings suggest that the BP nanodots have suitable biocompatibility, and are promising candidates as fluorescence probes for biomedical imaging applications.

Effects of Ga Substitution on Crystallographic and Magnetic Properties of Co Ferrites

  • Chae, Kwang Pyo;Choi, Won-Ok;Kang, Byung-Sub;Lee, Young Bae
    • Journal of Magnetics
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    • v.20 no.1
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    • pp.26-30
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    • 2015
  • The crystallographic and magnetic properties of gallium-substituted cobalt ferrite ($CoGa_xFe_{2-x}O_4$) were investigated. The new material was synthesized using conventional ceramic methods, with gallium substituted for ferrite in the range of x = 0.0 to 1.0, in steps of 0.2. X-ray diffraction and M$\ddot{o}$ssbauer spectroscopy were used to confirm the presence of crystallized particles in the $CoGa_xFe_{2-x}O_4$ ferrite powders. All of the samples exhibited a single phase with a spinel structure, and the lattice parameters decreased as the gallium content increased. The particle size of the samples also decreased as gallium increased. For $x{\leq}0.4$, the M$\ddot{o}$ssbauer spectra of $CoGa_xFe_{2-x}O_4$ could be fitted with two Zeeman sextets, which are the typical spinel ferrite spectra of $Fe^{3+}$ with A- and B-sites. However, for $x{\geq}0.6$, the M$\ddot{o}$ssbauer spectra could be fitted with two Zeeman sextets and one doublet. The variation in the M$\ddot{o}$ssbauer parameters and the absorption area ratio indicated a cation distribution of $(Co_{0.2-0.2x}Ga_xFe_{0.8-0.6x})[Co_{0.8+0.2x}Fe_{1.2-0.4x}]O_4$, and the magnetic behavior of the samples suggested that the increase in gallium content led to a decrease in the saturation magnetization and in the coercivity.