• Title/Summary/Keyword: Cell Carrier

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Study on Coverage Analysis using Interference Cancellation in WCDMA System (WCDMA시스템에서 간섭제거기를 적용한 통화권 분석에 관한 연구)

  • 박태준;박재원;박용완
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.13 no.7
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    • pp.693-701
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    • 2002
  • In this paper, we analyze the coverage of asynchronous IMT(International Mobile Telecommunication)-2000 reverse link with a MUD(Multi-User Detector) system. The MUD system is utilized to increase the coverage of reverse link. Also we have considered a propagation loss model and an interference effect. Because it is very difficult that we have calculated the interference accurately, so a fractional cell loading factor(F) is used in this paper. We make use of a MUD efficiency($\beta$) to analyze the performance; this efficiency is presented the MAI of reduction. A simulation utilizes Hata's model, we calculated the coverage according to voice and data services. In this paper, we have assumed that the frequency of carrier has 800 MHz or 1.9 GHz, and a bandwidth is decided 3.84 MHz. We have predicted the performance of actual system by the analysis of capacity and coverage.

DEVELOPMENT OF BONE REGENERATING MATERIAL USING BONE MORPHOGENETIC PROTEIN(rhBMP-2) AND BIORESORBABLE POLYMER (유전자재조합 인간 골형성단백2 및 생흡수성고분자를 이용한 골형성유도체의 개발)

  • Lee, Jong-Ho;Kim, Jong-Won;Ahn, Kang-Min;Kim, Kack-Kyun;Lee, Zang-Hee
    • Maxillofacial Plastic and Reconstructive Surgery
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    • v.21 no.4
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    • pp.325-331
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    • 1999
  • We tested the bone regenerating capacity and histologic response of bioresorbable matrix-type implant, which was made with Poly(lactide-co-glycolide)(PLGA) and bone apatite for the carrier of bone morphogenetic protein(BMP). The critical size defect of 8mm in diameter was created at the calvaria of SD rats(n=18), and repaired with polymer implant with $15{\mu}g$ of rhBMP-2(n=9) or without it(n=9). At 2 weeks, 1 months after implantation, the animals were sacrificed(3 animals at every interval and group) and histologically evaluated. The calvarial defect which was repaired with polymer with BMP healed with newly formed bone about 70% of total defect. But that without BMP showed only 0 to under 30% bony healing. Inflammatory response was absent in both group through the experimental period, but there's marked foreign body giant response though it was a little less significant in polymer with BMP group. As the polymer was resorbed, the space was infiltrated and replaced by fibrovascular tissue, not by bone. In conclusion, our formulation of bioresorbable matrix implant loaded with bone morphogenetic protein works good as a bone regenerating material. However, it is mandatory to devise our system to have better osteoinductive and osteoconductive property, and less multinucleated giant cell response.

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Growth of $Cd_{1-x}Zn_xS $ Thin films Using Hot Wall Epitaxy Method and Their Photoconductive Characteristics (HWE에 의한 $Cd_{1-x}Zn_xS $박막의 성장과 광전도 특성)

  • 홍광준;유상하
    • Korean Journal of Crystallography
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    • v.9 no.1
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    • pp.53-63
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    • 1998
  • The Cd1-xZnxS thin films were grown on the Si(100) wafers by a hot wall epitaxy method (HWE). the source and substrate temperature are 600℃ and 440℃, respectively. The crystalline structure of epilayers was investigated by double crystal X-ray diffraction (DCXD). Hall effect on the sample was measured by the van der Pauw method and the carrier density and mobility dependence of Hall characteristics on temperature was also studied. In order to explore the applicability as a photoconductive cell, we measured the sensitivity (γ), the ratio of photocurrent to darkcurrent (pc/dc), maximum allowable power dissipation (MAPD), spectral response and response time. The results indicated that the best photoconductive characteristic were observed in the Cd0.53Zn0.47S samples annealed in Cu vapor comparing with in Cd, Se, air and vacuum vapour. Then we obtained the sensitivity of 0.99, the value of pc/dc of 1.65 × 107, the MAPD of 338mW, and the rise and decay time of 9.7 ms and 9.3 ms, respectively.

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Revisiting Apoplastic Auxin Signaling Mediated by AUXIN BINDING PROTEIN 1

  • Feng, Mingxiao;Kim, Jae-Yean
    • Molecules and Cells
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    • v.38 no.10
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    • pp.829-835
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    • 2015
  • It has been suggested that AUXIN BINDING PROTEIN 1 (ABP1) functions as an apoplastic auxin receptor, and is known to be involved in the post-transcriptional process, and largely independent of the already well-known SKP-cullin-F-box-transport inhibitor response (TIR1) /auxin signaling F-box (AFB) ($SCF^{TIR1/AFB}$) pathway. In the past 10 years, several key components downstream of ABP1 have been reported. After perceiving the auxin signal, ABP1 interacts, directly or indirectly, with plasma membrane (PM)-localized transmembrane proteins, transmembrane kinase (TMK) or SPIKE1 (SPK1), or other unidentified proteins, which transfer the signal into the cell to the Rho of plants (ROP). ROPs interact with their effectors, such as the ROP interactive CRIB motif-containing protein (RIC), to regulate the endocytosis/exocytosis of the auxin efflux carrier PIN-FORMED (PIN) proteins to mediate polar auxin transport across the PM. Additionally, ABP1 is a negative regulator of the traditional $SCF^{TIR1/AFB}$ auxin signaling pathway. However, Gao et al. (2015) very recently reported that ABP1 is not a key component in auxin signaling, and the famous abp1-1 and abp1-5 mutant Arabidopsis lines are being called into question because of possible additional mutantion sites, making it necessary to reevaluate ABP1. In this review, we will provide a brief overview of the history of ABP1 research.

Hydrogenation Properties on MgHx-Sc2O3 Composites by Mechanical Alloying (MgHx-Sc2O3 복합재료의 수소화 특성)

  • Kim, Kyeong-Il;Kim, Yong-Sung;Hong, Tae-Whan
    • Transactions of the Korean hydrogen and new energy society
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    • v.21 no.2
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    • pp.81-88
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    • 2010
  • Hydrogen energy applications have recognized clean materials and high energy carrier. Accordingly, Hydrogen energy applies for fuel cell by Mg and Mg-based materials. Mg and Mg-based materials are lightweight and low cost materials with high hydrogen storage capacity. However, commercial applications of the Mg hydride are currently hinder by its high absorption/desorption temperature, and very slow reaction kinetics. Therefore one of the most methods to improve kinetics focused on addition transition metal oxide. Addition to transition metal oxide in $MgH_x$ powder produce $MgH_x$-metal oxide composition by mechanical alloy and it analyze XRD, EDS, TG/DSC, SEM, and PCT. This report considers kinetics by transition metal oxide rate and Hydrogen pressure. In this research, we can see behavior of hydriding/dehydriding profiles by addition catalyst (transition metal oxide). Results of PCI make a excellent showing $MgH_x$-5wt.% Sc2O3 at 623K, $MgH_x$-10wt.% $Sc_2O_3$ at 573K.

A Design nd Implementation of an IEEE 802.11a Modem for a Home Network of high speed (고속 홈네트워크를 위한 IEEE 802.11a 모뎀 설계와 구현)

  • Seo Jung-Hyun;Lee Je-Hoon;Cho Kyoung-Rok;Park Kwang-Roh
    • Journal of The Institute of Information and Telecommunication Facilities Engineering
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    • v.1 no.2
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    • pp.4-18
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    • 2002
  • In this paper, we propose the new design method for the OFDM based modem that is considerd a standard of wireless communication in indoor environments. We designed a improved FFT/IFFT in order to satisfy a data rate $6{\sim}54$Mbps required homenetworking of high speed and a improved channel equalization circuit using pilot signals for modile environments. And we designed a carrier offset estimator that uses the $tan^{-1}$ circuit to organize a memory structure. All steps are verifed performance through a FPGA and are implemented ASIC to use a standard library cell.

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The fabrication of ITO/p-InP solar cells (ITO/p-InP 태양전지 제작)

  • 맹경호;김선태;송복신;문동찬
    • Electrical & Electronic Materials
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    • v.7 no.3
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    • pp.243-251
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    • 1994
  • ITO(Indium Tin Oxide) film with thickness of 1500.angs. was prepared by an e-beam evaporator onto a glass and a p-type InP wafer (100) LEC grown Zn-doped p=2.3*10$\^$16/cm$\^$-3/), in which the components of ITO used for evaporation source were hot pressed pellets 1 mole% ln$\_$2/O$\_$3/+9 mole% SnO$\_$2/, and evaporated in O$\_$2/ ambient. The optimum conditions to preparation of ITO thin film were the substrate temperature of 350.deg. C, the injected oxygen pressure of 2*10$\^$-4/ torr, and the evaporation speed of 0.2-0.3.angs./sec, respectively. In these optimum conditions, the resistivity and the carrier concentration were 5.3*10$\^$-3/ .ohm.-cm, 6.5*10$\^$20/cm$\^$-3/, and the transmittance was over 80%. From the results of J-V measurements in ITO/p-InP structure solar cells, the higher pressure of injected oxygen, the more open circuit voltage. The efficiency of ITO/p-InP solar cell without the grid line contact, prepared by the optimum evaporation conditions, was 7.19%. By using the grid line contact, the efficiency, the open circuit voltage, the short circuit current density, the fill factor, the series resistance, and the shunt resistance were 8.5%, 0.47V, 29.48 mAcm$\^$-2/ , 61.35%, 3.ohm., and 26.6k.ohm., respectively.

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Characterization of EFG Si Solar Cells

  • Park, S.H.
    • Journal of Sensor Science and Technology
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    • v.5 no.5
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    • pp.1-10
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    • 1996
  • Solar cells made of the edge-defined film-fed growth Si are characterized using current-voltage, surface photovoltage, electron beam induced current, electron microprobe, scanning electron microscopy, and electron backscattering. The weak temperature dependence of the I-V curves in the EFG solar cells is due to a voltage variable shunt resistance giving higher diode ideality factors than the ideal one. The voltage variable shunt resistance is modeled by a modified recombination mechanism which includes carrier tunneling to distributed impurity energy states in the band gap within the space-charge region. The junction integrity and the substrate quality are characterized simultaneously by combining I-V and surface photovoltage (SPV) measurements. The diode ideality factors and the surface photovoltages characterize the junction integrity while the SPV diffusion lengths characterizes the substrate quality. Most of the measured samples show the voltage variable shunt resistance although how serious it is depends on the solar cell efficiency. The voltage variable shunt resistance is understood as one of the most important factors of the degradation of EFG solar cells.

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Intratumoral Administration of Rhenium-188-Labeled Pullulan Acetate Nanoparticles (PAN) in Mice Bearing CT-26 Cancer Cells for Suppression of Tumor Growth

  • Song, Ho-Chun;Na, Kun;Park, Keun-Hong;Shin, Chan-Ho;Bom, Hee-Seung;Kang, Dong-Min;Kim, Sung-Won;Lee, Eun-Seong;Lee, Don-Haeng
    • Journal of Microbiology and Biotechnology
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    • v.16 no.10
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    • pp.1491-1498
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    • 2006
  • The feasibility of pullulan acetate nanoparticles (PAN) with ionic strength (IS) sensitivity as a radioisotope carrier to inhibit tumor growth is demonstrated. PAN was radiolabeled with rhenium 188 (Re-188) without any chelating agents. The labeling efficiency of Re-188 into PAN (Re-188PAN) was $49.3{\pm}4.0%$ as determined by TLC. The tumor volumes of mice treated with 0.45 mCi of Re-188-PAN were measured and compared with that of free Re-188 after 5 days of intratumoral injection. For the histological evaluation of apoptotic nuclei of tumor cells, hematoxylin and eosin (H&E), and terminal deoxynucleotidyl transferase biotinylated deoxyuridine triphosphate nick end labeling (TUNEL) staining were performed. The mean tumor volume of the Re-188-PAN-treated group was decreased by 36% after 5 days, whereas that the free Re-188-treated group was decreased by only 15% (P<0.05). The mean number of TUNEL-positive cells in Re-188-PAN-treated tumors at $144.3{\pm}79.9$ cells/section was significantly greater than the control ($26.7{\pm}7.9$ cells/section, P=0.03). The numbers of leukocyte and lymphocyte were decreased in both free Re-188- and Re-188-PAN-treated mice. These results indicated that the intratumoral injection of Re-188-PAN effectively inhibits the tumor growth by prolonging Re-188 retention time in tumor site induced by the IS sensitivity.

Optical Properties Analysis of SiNx Double Layer Anti Reflection Coating by PECVD

  • Gong, Dae-Yeong;Park, Seung-Man;Yi, Jun-Sin
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.149-149
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    • 2010
  • The double-layer antireflection (DLAR) coatings have significant advantages over single-layer antireflection (SLAR) coatings. This is because they will be able to cover a broad range of the solar spectrum which would enhance the overall performance of solar cells. Moreover films deposited at high frequency are expected to show excellent and UV-stable passivation in the refractive index that we adopted. In this work, we present a novel DLAR coating using SiNx:H thin films with refractive indices 1.9 and 2.3 as the top and bottom layers. This approach is cost effective when compared to earlier DLAR coatings with two different materials. SiNx:H films were deposited by Plasma enhanced chemical vapor deposition (PECVD) technique using $SiH_4$, $NH_3$ and $N_2$ gases with flow rates 20~80sccm, 200sccm and 85 sccm respectively. The RF power, plasma frequency and substrate temperature for the deposition were 300W, 13.56 MHz and $450^{\circ}C$, respectively. The optimum thickness and refractive indices values for DLAR coatings were estimated theoretically using Macleod simulation software as 82.24 nm for 1.9 and 68.58 nm for 2.3 respectively. Solar cells were fabricated with SLAR and DLAR coatings of SiNx:H films and compared the cell efficacy. SiNx:H> films deposited at a substrate temperature of $450^{\circ}C$ and that at 300 W power showed best effective minority carrier lifetime around $50.8\;{\mu}s$. Average reflectance values of SLAR coatings with refractive indices 1.9, 2.05 and 2.3 were 10.1%, 9.66% and 9.33% respectively. In contrast, optimized DLAR coating showed a reflectance value as low as 8.98% in the wavelength range 300nm - 1100nm.

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