• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.9
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• pp.833-839
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• 2005

This work describes the effect of the number of roll pressing and the composition of carbon black on the electric and mechanical properties of carbon-PTFE electrode, in which composition is MSP20 : carbon black : $PTFE\;=\;95-X\;:\;X\;:\;5wt.\%$. It was found that the best electric and mechanical properties were obtained for sheet electrode roll pressed about 15 times and for sheet electrode, in which composition is MSP20 : carton black $PTFE\;=\;80\;:\;15\;:\;5wt.\%$. These behaviors could be explained by the network structure of PTFE fibrils and conducting Paths linked with carbon blacks, respectively. On the other hand, cell capacitor using the sheet electrode with $15wt.\%$ of carbon black attached on aluminum current collector with the electric conductive adhesive, in composition is carbon black $CMC\;=\;70\;:\;30wt.\%$, has exhibited the best rate capability between $0.5\;mA/cm^2\~100\;mA/cm^2$ current density and the lowest ESR.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.355-356
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• 2006

This work describes the effect of the number of roll pressing and the composition of carbon black on the electric and mechanical properties of carbon-PTFE electrode, in which composition is MSP20 : carbon black: PTFE = 95-X : X : 5 wt.%. It was found that the best electric and mechanical properties were obtained for sheet electrode roll pressed about 15 times and for sheet electrode, in which composition is MSP20 carbon black : PTFE = 80 : 15 : 5 wt%. These behaviors could be explained by the network structure of PTFE fibrils and conducting paths linked with carbon blacks, respectively. On the other hand, cell capacitor using the sheet electrode with 15 wt.% of carbon black attached on aluminum current collector with the electric conductive adhesive, in composition is carbon black : CMC = 70 : 30 wt.%, has exhibited the best rate capability between 0.5 $mA/cm^2$ ~ 100 $mA/cm^2$ current density and the lowest ESR.

• Journal of the Korean Chemical Society
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• v.40 no.1
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• pp.37-43
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• 1996

The electrochemical impedance spectra of polyaniline film coated on tungsten electrodes by cyclic voltammetry have been measured in 0.1 M aqueous sulfuric acid solution. An electrochemical cell composed of large redox capacitance and low resistance of PANI-film in series was in agreement with the conductive behavior reported at these potentials. When the PANI was coated on bare tungsten, the electrolytic resistance was only observed. However, on the oxidized tungsten instead of bare tungsten, the resistance of tungsten oxide and the contact resistance between PANI and tungsten oxide were additionally observed. Equivalent electrical circuits have been deduced from the impedance data. It was therfore possible to obtain the parameters of the ionic mass transport within the film.

• Journal of the Korean Magnetics Society
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• v.4 no.2
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• pp.179-183
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• 1994

A high efficiency small electromagnet (22 mm air gap and $40{\times}25mm^{2}$ core's cross section) suitable for measuring magnetostriction and magnetic anisotropy was biult. The magnet could be minaturized by reducing the measuring space and time. The excitation current of the electromagnet was supplied for only a few second of measuring time. Cooling system of the electromagnet could be eliminated since the dissipation energy was very small. An 0.5 T magnetic field was generated with 180 W power consumption. The values of magnetostriction and magnetic anisotropy were measured with a very sensitive capacitance cell with resolution of $10^{-8}$ and 1 nJ. The torque was calibrated using a soft magnetic ribbon's shape anisotropy.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.4
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• pp.74-84
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• 2003

Conventional test algorithms do not effectively detect faults by word-line and bit-line coupling noise resulting from the increase of the density of memories. In this paper, the possibility of faults caused by word-line coupling noise is shown, and new fault model, WLSFs(Word-Line Sensitive Fault) is proposed. We also introduce the algorithm considering both word-line and bit-line coupling noise simultaneously. The algorithm increases probability of faults which means improved fault coverage and more effective test algorithm, compared to conventional ones. The proposed algorithm can also cover conventional basic faults which are stuck-at faults, transition faults and coupling faults within a five-cell physical neighborhood.

• Journal of electromagnetic engineering and science
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• v.17 no.4
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• pp.178-180
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• 2017

This study presents a 2-20 GHz monolithic distributed power amplifier (DPA) using a $0.25{\mu}m$ AlGaN/GaN on SiC high electron mobility transistor (HEMT) technology. The gate width of the HEMT was selected after considering the input capacitance of the unit cell that guarantees decade bandwidth. To achieve high output power using small transistors, a 12-stage DPA was designed with a non-uniform drain line impedance to provide optimal output power matching. The maximum operating frequency of the proposed DPA is above 20 GHz, which is higher than those of other DPAs manufactured with the same gate-length process. The measured output power and power-added efficiency of the DPA monolithic microwave integrated circuit (MMIC) are 35.3-38.6 dBm and 11.4%-31%, respectively, for 2-20 GHz.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.23 no.5
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• pp.9-17
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• 2009

In this paper, we describe a flow meter system for pulverized coal developed for the pulverizer-burner system of a boiler or blast furnace, which uses the density and the velocity of the granule flow. The granule flow density is measured by a sensor that detects the capacitance from the electrode on the surface of the piping system. The velocity of granule flow can be calculated using the distance between two pairs of built-in sensors in the flow direction, the time obtained from the sampling cycle using the correlation method between two waveforms of the sensors. The flow rate is calculated from the density and velocity of the granule flow. The reliability and accuracy of the flow meter system has been verified by comparing the data with the weight measured from a load-cell.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.419-422
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• 2002

We have studied dielectric properties in the smectic phases of 4-(6-ethoxy-1-trifluoromethyl-hexyloxycarbonyl)-phenyl-4-Nonyloxybiphenyl-4-carboxylat ( TFMEOHPNBC ) having fluorine attached to one of its benzene rings. Homogeneous and homeotropic 1.5 and 5${\mu}m$ thick test cells were prepared to analyze molecular dynamic property. We measured capacitance as a function of temperature in the frequency range between 20 Hz and 100 kHz by using HP4284A LCR meter. We observed that the homogeneous cell has high dielectric constant causing dipole moment in smectic $C^{\ast}$ phase, but we can see the dipole moments are canceled out in antiferroelectric phase. It is found that there are two kind of the relaxation director fluctuation below 100 kHz. The first is ionic or space charge contribution below 10 Hz, and the second is Goldstone mode near 1-2 kHz. We will discuss molecular dynamics in smectic phase from extra information such as x-ray and electrooptic data.

• Current Photovoltaic Research
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• v.2 no.2
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• pp.69-72
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• 2014

We investigated current-voltage (I-V) and capacitance (C)-V characteristics of solution-processed thin film solar cells, consisting of $Cu(In,Ga)S_2$ and $CuInS_2$ stacked absorber layers. The ideality factors, extracted from the temperature-dependent I-V curves, showed that the tunneling-mediated interface recombination was dominant in the cells. Rapid increase of both series- and shunt-resistance at low temperatures would limit the performance of the cells, requiring further optimization. The C-V data revealed that the carrier concentration of the $CuInS_2$ layer was about 10 times larger than that of the $Cu(In,Ga)S_2$ layer. All these results could help us to find strategies to improve the efficiency of the solution-processed thin film solar cells.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.388-388
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• 2012

In this letter, We have investigated cell characteristics of the alloy FePt-NDs charge trapping memory capacitors with high-k $Al_2O_3$ dielectrics as a blocking oxide. The capacitance versus voltage (C-V) curves obtained from a representative MOS capacitor embedded with FePt-NDs synthesized by the post deposition annealing (PDA) treatment process exhibit the window of flat-band voltage shift, which indicates the presence of charge storages in the FePt-NDs. It is shown that NDs memory with high-k $Al_2O_3$ as a blocking oxide has performance in large memory window and low leakage current when the diameter of ND is below 2 nm. Moreover, high-k $Al_2O_3$ as a blocking oxide increases the electric field across the tunnel oxide, while reducing the electric field across the blocking layer. From this result, this device can achieve lower P/E voltage and lower leakage current. As a result, a FePt-NDs device with high-k $Al_2O_3$ as a blocking oxide obtained a~7V reduction in the programming voltages with 7.8 V memory.