• Transactions on Electrical and Electronic Materials
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• v.3 no.2
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• pp.28-31
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• 2002

The Cdl-xZnxTe film was fabricated by thermal evaporation for the flat-panel X-ray detector. The stoichimetric ratio and the crystal structure of a polycrystalline Cd$_{1-x}$ Zn$_{x}$Te were investigated by EPMA and XRD, respectively. The leakage current and X-ray sensitivity of the fabricated films were measured to analyze the X-ray response characteristic of Zn in the polycrystalline CdZnTe thin film. The leakage current and the output charge density of Cd$_{0.7}$Zn$_{0.3}$Te thin film were measured to 0.37 nA/cm$^2$ and 260 pc/cm$^2$ at an applied voltage of 2.5 V/${\mu}{\textrm}{m}$, respectively. Experimental results showed that the increase of Zn doping rates in Cd$_{1-x}$ Zn$_{x}$Te detectors reduced the leakage current and improved the signal to noise ratio significantly.

• Nuclear Engineering and Technology
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• v.51 no.3
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• pp.731-737
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• 2019

In this study, a new measurement method based on voltage transients in CdZnTe detectors response to low energy photon irradiations is applied to measure the electron mobility (${\mu}_e$) and electron mobility-lifetime product $({\mu}{\tau})_e$ in a CdZnTe detector. In the proposed method, the pulse rise times are derived from low energy photon response to 59.5 keV($^{241}Am$), 88 keV($^{109}Cd$) and 122 keV($^{57}Co$) ${\gamma}-rays$ for the irradiation of the cathode surface at each detector for different bias voltages. The electron $({\mu}{\tau})_e$ product was then determined by measuring the variation in the photopeak amplitude as a function of bias voltage at a given photon energy using a pulse-height analyzer. The $({\mu}{\tau})_e$ values were found to be $(9.6{\pm}1.4){\times}10^{-3}cm^2V^{-1}$ for $1000mm^3$, $(8.4{\pm}1.6){\times}10^{-3}cm^2V^{-1}$ for $1687.5mm^3$ and $(7.6{\pm}1.1){\times}10^{-3}cm^2V^{-1}$ for $2250mm^3$ CdZnTe detectors. Those results were then compared with the literature $({\mu}{\tau})_e$ values for CdZnTe detectors. The present results indicate that, the electron mobility ${\mu}_e$ and electron $({\mu}{\tau})_e$ values in CdZnTe detectors can be measured easily by applying voltage transients response to low energy photons, utilizing a fast signal acquisition and data reduction and evaluation.

• Transactions on Electrical and Electronic Materials
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• v.4 no.5
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• pp.15-18
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• 2003

The Cd$\_$1-x/Zn$\_$x/Te film was produced by thermal evaporation for the flat-panel X-ray detector. The crystal structure and the surface morphology of poly crystalline Cd$\_$1-x/Zn$\_$x/Te film were examined using XRD and SEM, respectively. The leakage current and X-ray sensitivity of the fabricated films were measured to analyze the X-ray response characteristic of Zn in a polycrystalline CdZnTe thin film. The leakage current and the output charge density of Cd$\_$0.7/Zn$\_$0.3/Te thin film were measured to 0.3 1nA/$\textrm{cm}^2$ and 260 pC/$\textrm{cm}^2$ at an applied voltage of 2.5 V/$\mu\textrm{m}$, respectively. Experimental results showed that the increase of Zn doping rates in Cd$\_$1-x/Zn$\_$x/Te detectors reduced the leakage current and improved the X-ray sensitivity significantly. The leakage current was drastically diminished by the formation of thin parylene layer in the Cd$\_$0.7/Zn$\_$0.3/Te detector.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.813-816
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• 2002

We investigate the junction between CdZnTe and a variety of metals with the aim of determining whether the choice of metal can improve the performance of X-ray image detectors, in particular minimizing the dark current. The samples consist of $5{\mu}m$ thick CdZnTe with top electrodes formed from In, Al, and Au. For each metal, current transients following application of valtages from -10V to 10V are measured for up to 1 hour. We find that dark currents depending on the metal used. The current is controlled by hole injection at the metal-CdZnTe junction and there is consistent trend with the metal's work function possibly and it seems that metal to CdZnTe layer junction is ohmic contact.

• Nuclear Engineering and Technology
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• v.54 no.12
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• pp.4620-4624
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• 2022

Several cadmium zinc telluride (CZT) crystals were fabricated into radiation detectors using methods that included slicing, dicing, lapping, polishing, and chemical etching. A wet passivation with sodium hypochlorite (NaOCl) was then carried out on the Br-etched detectors. The Te-rich layer on the CZT surface was successfully compensated to the Te oxide layer, which was analyzed with X-ray photoelectron spectroscopy data of both a Br-etched crystal and a passivated CZT crystals. We confirmed that passivation with NaOCl improved the transport property by analyzing the mobility-lifetime product and surface recombination velocity. The electrical and spectroscopic properties of large volume detectors were compared before and after passivation, and then the detectors were observed for a month. Both bar and quasi-hemispherical detectors show an enhancement in performance after passivation. Thus, we could identify the effect of NaOCl passivation on large volume CZT detectors.

• Nuclear Engineering and Technology
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• v.55 no.8
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• pp.2797-2801
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• 2023

CdZnTeSe (CZTS) has attracted attention for applications in X- and gamma-ray detectors owing to its improved properties compared to those of CdZnTe (CZT). In this study, we grew and processed single crystals of CZT and CZTS using the Bridgeman method to confirm the feasibility of using a dosimeter for high-energy X-rays in radiotherapy. We evaluated their linearity and precision using the coefficient of determination (R²) and relative standard deviation (RSD). CZTS showed sufficient RSD values lower than 1.5% of the standard for X-ray dosimetry, whereas CZT's RSD values increased dramatically under some conditions. CZTS exhibited an R² value of 0.9968 at 500 V/cm, whereas CZT has an R² value of 0.9373 under the same conditions. The X-ray response of CZTS maintains its pulse shape at various dose rates, and its properties are improved by adding selenium to the CdTe matrix to lower the defect density and sub-grain boundaries. Thus, we validated that CZTS shows a better response than CZT to high-energy X-rays used for radiotherapy. Further, the applicability of an onboard imager, a high-energy X-ray (>6 MV) image, is presented. The proposed methodology and results can guide future advances in X-ray dose detection.

• Nuclear Engineering and Technology
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• v.54 no.12
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• pp.4693-4697
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• 2022

Parylene coating was adopted on CdZnTe (CZT) detector as a mechanical protection layer after wet passivation with hydrogen peroxide (H₂O₂) and ammonium fluoride (NH₄F). Wet chemical passivant lose their effectiveness when exposed to the ambient conditions for a long time. Parylene coating could protect the effectiveness of passivation, by mechanically blocking the exposure to the ambient conditions. Stability of CZT detector was tested with the measurement of leakage current density and response to radio-isotopes. When the enough thickness of parylene (>100 ㎛) is adopted, parylene is a promising protection layer thereby ensuring the performance and long-term stability of CZT detectors.

• Journal of radiological science and technology
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• v.37 no.4
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• pp.253-259
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• 2014

Large volume of $6{\times}6{\times}12mm^3$ CdZnTe ${\gamma}$-ray detector was fabricated with CdZnTe single crystals grown by Traveling Heater Method (THM) to evaluate the energy resolution of 662 keV in $^{137}Cs$. Hole tailing effect which originated from the large mobility difference in electron and hole degrade energy resolution of radiation detector and its effects become more severe for a large volume detectors. Generally, single carrier collection technique is very useful method to remove/minimize hole tailing effect and thereby improvement in energy resolution. Virtual Frisch-grid technique is also one of single charge collection method through weighting potential engineering and it is very simple and easily applicable one. In this paper, we characterized CZT detector grown by THM and evaluated the effectiveness of virtual Frisch-grid technique for a high energy gamma-ray detector. The proper position and width of virtual Frisch-grid was determined from electric field simulation using ANSYS Maxwell ver. 14.0. Energy resolution of 2.2% was achieved for the 662 keV ${\gamma}$-peak of $^{137}Cs$ with virtual Frisch-grid CdZnTe detector.

• Nuclear Engineering and Technology
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• v.43 no.6
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• pp.567-572
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• 2011

A sensitivity analysis of the methods used to evaluate the transport properties of a CdZnTe detector was performed using two different radiations (${\alpha}$ particle and gamma-ray) emitted from an $^{241}Am$ source. The mobility-lifetime products of the electron-hole pair in a planar CZT detector ($5{\times}5{\times}2\;mm^3$) were determined by fitting the peak position as a function of biased voltage data to the Hecht equation. To verify the accuracy of these products derived from ${\alpha}$ particles and low-energy gamma-rays, an energy spectrum considering the transport property of the CZT detector was simulated through a combination of the deposited energy and the charge collection efficiency at a specific position. It was found that the shaping time of the amplifier module significantly affects the determination of the (${\mu}{\tau}$) products; the ${\alpha}$ particle method was stabilized with an increase in the shaping time and was less sensitive to this change compared to when the gamma-ray method was used. In the case of the simulated energy spectrum with transport properties evaluated by the ${\alpha}$ particle method, the peak position and tail were slightly different from the measured result, whereas the energy spectrum derived from the low-energy gamma-ray was in good agreement with the experimental results. From these results, it was confirmed that low-energy gamma-rays are more useful when seeking to obtain the transport properties of carriers than ${\alpha}$ particles because the methods that use gamma-rays are less influenced by the surface condition of the CZT detector. Furthermore, the analysis system employed in this study, which was configured by a combination of Monte Carlo simulation and the Hecht model, is expected to be highly applicable to the study of the characteristics of CZT detectors.

• Proceedings of the Korean Nuclear Society Conference
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• 2005.10a
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• pp.765-766
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• 2005