• Journal of Environmental Science International
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• v.5 no.5
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• pp.593-603
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• 1996

A dual-porosity filmed agglomerate model for the porous cathode of the molten carbonate fuel has been investigated to predict the cell performance. A phenomenological treatment of molecular, kinetic and electrode parameters has been given. The major physical and chemical phenomena being modeled include mass transfer, ohmic losses and reaction kinetics at the electrode- electrolyte interface. The model predicts steady-state cell performance, given the above conditions that characterize the state of the electrode. Quasi-linearization and finite difference techniques are used to solve the coupled nonlinear differential equations. Also, the effective surface area of electrode pore was obtained by mercury porosimeter. The results of the investigation are presented in the form of plots of overpotential vs. current density with varied the electrode material, gas composition and mechanism. The predicted polarization curves are compared with the empirical data from 1 c$m^2$ cell. A fair correspondence is observed.

• Journal of the Korean institute of surface engineering
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• v.51 no.4
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• pp.243-248
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• 2018

All solid state thin film batteries with two types of cell structure, Pt / $LiCoO_2$ / LiPON / Cu and Pt / $LiCoO_2$ / LiPON / $LiCoO_2$ / Cu, are prepared and their electrochemical performances are investigated to evaluate the effect of $LiCoO_2$ interlayer at the interface of LiPON / Cu. The crystallinity of the deposited $LiCoO_2$ thin films is confirmed by XRD and Raman analysis. The crystalline $LiCoO_2$ cathode thin film is obtained and $LiCoO_2$ as the interlayer appears to be amorphous. The surface morphology of Cu current collector after cycling of the batteries is observed by AFM. The presence of a 10 nm-thick layer of $LiCoO_2$ at the interface of LiPON / Cu enhances the interfacial adhesion and reduces the interfacial resistance. As a result, Li plating / stripping at the interface of LiPON / Cu during charge/discharge reaction takes place more uniformly on Cu current collector, while without the interlayer of $LiCoO_2$ at the interface of LiPON / Cu, the Li plating / stripping is localized on current collector. The thin film batteries with the interlayer of $LiCoO_2$ at the interface of LiPON / Cu exhibits enhanced initial coulombic efficiency, reversible capacity and cycling stability. The thickness of the anode current collector Cu also appears to be crucial for electrochemical performances of all solid state thin film batteries.

• Ceramist
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• v.21 no.4
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• pp.378-387
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• 2018

The optimal fabrication conditions for $Gd_{0.1}Ce_{0.9}O_{2-{\delta}}$(GDC) buffer layer and $La_{0.6}Sr_{0.4}Co_{0.2}Fe_{0.8}O_{3-{\delta}}$ (LSCF) cathode on 1mol% $CeO_2-10mol%\;Sc_2O_3$ stabilized $ZrO_2$ (CeScSZ) electrolyte were investigated for application of IT-SOFCs. GDC buffer layer was used in order to prevent undesired chemical reactions between LSCF and CeScSZ. These experiments were carried out with $5{\times}5cm^2$ anode supported unit cells to investigate the tendencies of electrochemical performance, Microstructure development and interface reaction between LSCF/GDC/CeScSZ along with the variations of GDC buffer layer thickness, sintering temperatures of GDC and LSCF were checked, respectively. Electrochemical performance was analyzed by DC current-voltage measurement and AC impedance spectroscopy. Microstructure and interface reaction were investigated by scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS). Although the interfacial reaction between these materials could not be perfectly inhibited, We found that the cell, in which $6{\mu}m$ GDC interlayer sintered at $1200^{\circ}C$ and LSCF sintered at $1000^{\circ}C$ were applied, showed good interfacial adhesions and effective suppression of Sr, thereby resulting in fairly good performance with power density of $0.71W/cm^2$ at $800^{\circ}C$ and 0.7V.

• Journal of the Korean Ceramic Society
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• v.34 no.6
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• pp.652-658
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• 1997

The phase stability in the interface of Sr-doped LaMnO3(LSM)/Gd-doped CeO2(CGO) was examined in this study in order to check the feasibility of using LSM as the cathode material in a low-temperature SOFC(solid oxide fuel cell) using CGO as the electrolyte. For the purpose, CGO powders of Ce0.82Gd0.18O0.91 and two LSM powders having different compositions, La0.9Sr0.1MnO3(LSM10) and La0.5Sr0.5MnO3(LSM50), were synthesized using Pechini method. Then, specimens having the LSM/CGO interface were prepared, heat-treated at 130$0^{\circ}C$ for up to 3 days, and analyzed by XRD and STEM/EDX. Face-centered cubic CGO powders of less than 10 nm size were obtained by calcination of polymeric precursor formed in the process at 45$0^{\circ}C$. Higher calcination temperature of $700^{\circ}C$ was necessary for monoclinic LSM10 and cubic LSM50 powders. LSM powders were coarser than CGO and observed to be in the range of 50~100 nm. No trace of LSM-CGO interaction product was found in the XRD pattern. Also it was known from the concentration profile in the vicinity of the interface that interdiffusion was occurred over only a small penetration depth of ~100 nm order.

• Journal of the Korean Electrochemical Society
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• v.2 no.2
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• pp.70-74
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• 1999

The electrode kinetic parameters at the Pd/0.5 M LiOH electrolyte interface have been qualitatively studied using the phase-shift method. The phase shift $(\phi)$ depends on both the cathode potential (E>0) and frequency (f), and $\theta$ is inversely proportional to the fractional surface coverage $\theta$. At an intermediate frequency (10 Hz), the phase-shift profile $(\phi\;vs.\;E)$ can be related to the fractional surface coverage $(\theta\;vs.\;E)$. The phase-shift method can be used to estimate or plot the Frumkin adsorption isotherm. The rate (r) of change of the free energy of adsorption with $({\theta})$ is 22.3 kJ/mol. The equilibrium constant (K) for adsorption and the standard free energy $({\Delta}G_{\theta})$ of the adsorbed hydrogen atom $(H_{ads})$ are $3.7\times10^{-3}{\Delta}G_{\theta}>-8.4kJ/mol$, respectively. For 1$0.38>\theta>0$, the energy liberation or the exothermic reaction for hydrogen adsorption at the Pd cathode can be occurred. The electrode kinetic parameters $(r,\;K,\;{\Delta}G_{\theta}$ depend on the fractional surface coverage $({\theta})$ or the phase shift $(\phi)$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04b
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• pp.43-46
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• 2000

In this paper, the stress and transient currents associated with the on and off time of applied voltage were used to measure the density and distribution of high voltage stress induced traps in thin silicon oxide films. The transient currents were due to the discharging of traps generated by high stress voltage in the silicon oxides. The trap distributions were relatively uniform near both cathode and anode interface. The trap densities were dependent on the stress polarity. The stress generated trap distributions were relatively uniform the order of $10^{11}\sim10^{21}$[states/eV/$cm^2$] after a stress. The trap densities at the oxide silicon interface after high stress voltages were in the $10^{10}\sim10^{13}$[states/eV/$cm^2$]. It appear that the stress and transient current that flowed when the stress voltage were applied to the oxide was caused by carriers tunneling through the silicon oxide by the high voltage stress generated traps.

• Journal of Information Display
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• v.6 no.1
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• pp.28-32
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• 2005

The electronic structures of Al/RbF/tris-(8-hydroxyquinoline)aluminium ($Alq_3$) and $Al/CaF_2/Alq_3$interfaces were investigated using x-ray photoelectron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS). For both systems, the UPS showed a significant valence band shift following the deposition of the thin fluoride layers on $Alq_3$. However, the formation of gap state in valence region and the extra peak N 1s core level spectra showed different trends, suggesting that the alkali fluoride and alkali-earth fluoride interlayer have different reaction mechanisms at the interface between Al cathode and $Alq_3$. In addition, the deposition of Al has considerably less effect on the valence band shift compared to the deposition of both RbF and $CaF_2$. These results suggest that the charge transfer across the interface and the resulting gap state formation may have lesser effect on the enhancement of organic light-emitting device performance than the observed valence band shift, which is thought to lower the electron injection barrier.

• Korean Membrane Journal
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• v.10 no.1
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• pp.46-52
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• 2008

Optimization of ionomer solution was conducted in order to improve the performance of MEAs in PEMPC. The interface between membrane and electrodes in MEAs is crucial region determining fuel cell performance as well as ORR reaction at cathode. Through the modification of Nafion ionomer content at the interface between membrane and electrodes, an optimal content was obtained with Nafion 115 membranes. Two times higher current density was obtained with the outer Nafion sprayed MEA compared with the non-sprayed one. In addition, the symmetrical impedance spectroscopy mode (SM) exhibited that the resistances of membrane area, proton hydration, and charge transfer decreased as the outer Nafion is sprayed. From the polarization curves and SM, the highest current density and the lowest resistance was obtained at the outer ionomer content of $0.15\;mg\;cm^{-2}$.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.1014-1018
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• 2007

We have demonstrated the enhancement of the power efficiency and device lifetime of organic light-emitting diodes (OLEDs) by introducing the ETL 1 / ETL2 (composite ETL) structure between EML and cathode and the HIL1 (composite HIL) / HIL2 between anode and HTL. Compared to reference devices retaining conventional architecture, novel OLED structure shows an outstanding EL efficiency that is 1.6 times higher (${\sim}4.5$ lm/w versus ${\sim}$ 2.71 lm/w for the reference device) and lower driving voltage $({\bigtriangleup}V>1V)$, but also a longer lifetime and smaller operating voltage drift over time. It is suggested in this work that the device performance can be improved by in-situ ohmic contact through novel electron controlled structure and reduction of charge accumulation in the interface through composite HIL

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.6
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• pp.412-417
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• 2000

High electric field stressed trap distributions were investigated in the thin silicon oxide of polycrystalline silicon gate metal oxide semiconductor capacitors. The transient currents associated with the off time of stressed voltage were used to measure the density and distribution of high voltage stress induced traps. The transient currents were due to the discharging of traps generated by high stress voltage in the silicon oxides. The trap distributions were relatively uniform near both cathode and anode interface in polycrystalline silicon gate metal oxide semiconductor devices. The stress generated trap distributions were relatively uniform the order of $10^{11}$~$10^{12}$ [states/eV/$\textrm{cm}^2$] after a stress. The trap densities at the oxide silicon interface after high stress voltages were in the $10^{10}$~$10^{13}$ [states/eV/$\textrm{cm}^2$]. It was appeared that the transient current that flowed when the stress voltages were applied to the oxide was caused by carriers tunneling through the silicon oxide by the high voltage stress generated traps.