• 자원리싸이클링
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• 제24권6호
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• pp.9-16
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• 2015

폐리튬이차전지 양극재 재활용기술에 있어 침출과정을 통해 회수된 유가금속을 다시 원하는 조성의 전구체로 재합성하는 공침공정은 필수적이다. 본 연구에서는 고용량 특성의 Ni-rich 조성인 $LiNi_{0.6}Co_{0.2}Mn_{0.2}O_2$ (NCM 622) 양극재의 전구체 재합성 시 암모니아가 불순물로서 미치는 영향을 확인하는 공침실험을 수행하였다. SEM 및 EDS 분석결과 양극재 전구체 최적 합성조건(금속염 용액 농도 2 M 기준 암모니아수 농도 1 M)에서 암모니아 농도가 증가할수록 원하는 조성의 전구체가 제조되지 않음을 확인하였다. Ni의 설계함량인 60 mol%를 기준하여 암모니아수 농도 1 M ~ 4 M 조건에서 각각 100%, 98%, 95%, 87%에 해당하는 공침효율을 보여주었다. 또한 제조된 전구체 입자들의 구형화도, 균일도 및 크기분포특성 등의 형상학적 특징을 확인하였다.

• 대한환경공학회지
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• 제31권1호
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• pp.29-34
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• 2009

표면처리폐수 내 질산성 질소를 제거하기 위한 전기화학적 처리공정에서 전극간격, 환원제, 1단 처리수 반송, 타 물질과 동시 처리 등 네 가지 조건을 변화시키며 실험을 진행하였다. 실험 결과, 전극간격은 10 mm일 때 질산성 질소 제거효율이 높았으며 10 mm 보다 전극간격이 좁아질 경우 농도분극 현상의 증가로 인해 제거효율이 감소하며 10 mm 보다 넓어질 경우 전압이 상승하여 에너지 소모가 증가하였다. 환원제 영향에 대한 실험 결과, 질산성 질소가 환원되는 과정에서 수소가 소모되기 때문에 수소이온 농도가 높은 산성조건에서 더 원활한 환원반응이 이루어졌으며 아연을 1.2배 투입할 경우 질산성 질소와의 반응량이 증가하여 질산성 질소 제거효율이 증가하였다. 1단 처리수를 반송할 경우 난류가 형성되어 환원전극에 부착된 아연이 탈착되어 재 이용되고 내부 확산이 증가하여 농도분극현상이 감소함으로 인해 질산성 질소 제거효율이 증가하였으며 아연 투입량 감소 효과가 나타났다. 암모니아성 질소는 질산성 질소 제거에 영향을 미치지 않았고 폐수 내 염소성분이 충분할 경우 질산성 질소와 동시 처리에도 문제가 없는 것으로 나타났다. 중금속은 환원되는 과정에서 전자를 소모하여 질산성 질소 제거효율은 감소하지만 전류밀도 증가나 본 장치의 전단을 중금속 제거용으로 사용하는 방법 등으로 해결이 가능할 것으로 생각한다.

• 전기화학회지
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• 제22권3호
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• pp.87-103
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• 2019

현재 상용화되어 있는 리튬이온전지에 사용하고 있는 비수계 유기 전해액은 가연성, 부식성, 고휘발성, 열적 불안정성 등의 단점 때문에 더욱 안전하고 장수명을 보이는 고체 전해질로 대체하는 연구가 진행되고 있으며, 이것은 전기자동차 및 에너지저장 시스템과 같은 중대형 이차전지에도 효율적으로 활용될 수 있다. 다양한 형태의 고체 전해질 중에서 현재 고분자 매트릭스에 활성 무기 충진재가 포함되어 있는 복합 고체 전해질이 고이온전도도와 전극과의 탁월한 계면접촉을 이루는데 가장 유리한 것으로 알려졌다. 본 총설에서는 우선 고체 전해질의 종류와 연혁에 관해 간단히 소개하고, 고분자 및 무기 충진재 (불활성 및 활성)로 구성되는 고체 고분자 전해질 및 무기 고체 전해질의 기본적 물성 및 전기화학적 특성을 개괄한다. 또한 이 소재들의 형상을 기준으로 입자형 (0D), 섬유형 (1D), 평판형 (2D), 입체형 (3D)의 형식으로 구성된 복합고체 전해질과 이에 따른 전고체 전지의 전기화학적 특성을 논의한다. 특히 리튬금속 음전극을 사용하는 전고체 전지에 있어서 양전극-전해질 계면, 음전극-전해질 계면, 입자간 계면의 특성에 관해 소개하고, 마지막으로 현재까지 보고된 관련 총설들을 참조하여 복합 고체 전해질 기술의 현재 요구조건 및 미래 전망을 알아본다.

• 멤브레인
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• 제32권5호
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• pp.283-291
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• 2022

재생에너지의 보급과 기후변화를 대응하기 위한 해결책으로 수소에너지에 대한 관심이 늘어나고 있다. 수소는 미이용 전력을 대용량 장주기로 저장하기에 가장 적합한 수단이며 이러한 수소를 생산하는 기술 중 수전해는 물에 전기에너지를 인가하여 수소를 생산하는 친환경적 수소생산 기술로 알려져 있다. 수전해의 구성 요소 중 분리막은 음극과 양극을 물리적으로 분리할 뿐만 아니라 생성되는 수소와 산소의 섞임 현상을 방지하며 이온의 전달을 가능하게 하는 복합적인 역할을 수행한다. 특히 기존의 수전해 기술들의 단점을 보완할 수 있는 차세대 음이온 교환막 수전해에서의 핵심은 우수한 음이온 교환막을 확보하는 것이다. 높은 이온 전도성과 알칼리 환경에서 우수한 내구성을 동시에 가지려는 많은 연구들이 진행되고 있으며 다양한 소재에 대한 탐색이 이루어지고 있다. 본 총설에서는 상용 블록 공중합체인 Polystyrene-b-poly(ethylene-co-butylene)-b-polystyrene (SEBS)를 기반으로 하는 음이온 교환막에 대한 연구에 대해 살펴보며 최신 연구 동향과 앞으로 나아가야할 점에 대해 논하고자 한다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.100-101
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• 2012

The plasma damage free and room temperature processedthin film deposition technology is essential for realization of various next generation organic microelectronic devices such as flexible AMOLED display, flexible OLED lighting, and organic photovoltaic cells because characteristics of fragile organic materials in the plasma process and low glass transition temperatures (Tg) of polymer substrate. In case of directly deposition of metal oxide thin films (including transparent conductive oxide (TCO) and amorphous oxide semiconductor (AOS)) on the organic layers, plasma damages against to the organic materials is fatal. This damage is believed to be originated mainly from high energy energetic particles during the sputtering process such as negative oxygen ions, reflected neutrals by reflection of plasma background gas at the target surface, sputtered atoms, bulk plasma ions, and secondary electrons. To solve this problem, we developed the NBAS (Neutral Beam Assisted Sputtering) process as a plasma damage free and room temperature processed sputtering technology. As a result, electro-optical properties of NBAS processed ITO thin film showed resistivity of $4.0{\times}10^{-4}{\Omega}{\cdot}m$ and high transmittance (>90% at 550 nm) with nano- crystalline structure at room temperature process. Furthermore, in the experiment result of directly deposition of TCO top anode on the inverted structure OLED cell, it is verified that NBAS TCO deposition process does not damages to the underlying organic layers. In case of deposition of transparent conductive oxide (TCO) thin film on the plastic polymer substrate, the room temperature processed sputtering coating of high quality TCO thin film is required. During the sputtering process with higher density plasma, the energetic particles contribute self supplying of activation & crystallization energy without any additional heating and post-annealing and forminga high quality TCO thin film. However, negative oxygen ions which generated from sputteringtarget surface by electron attachment are accelerated to high energy by induced cathode self-bias. Thus the high energy negative oxygen ions can lead to critical physical bombardment damages to forming oxide thin film and this effect does not recover in room temperature process without post thermal annealing. To salve the inherent limitation of plasma sputtering, we have been developed the Magnetic Field Shielded Sputtering (MFSS) process as the high quality oxide thin film deposition process at room temperature. The MFSS process is effectively eliminate or suppress the negative oxygen ions bombardment damage by the plasma limiter which composed permanent magnet array. As a result, electro-optical properties of MFSS processed ITO thin film (resistivity $3.9{\times}10^{-4}{\Omega}{\cdot}cm$, transmittance 95% at 550 nm) have approachedthose of a high temperature DC magnetron sputtering (DMS) ITO thin film were. Also, AOS (a-IGZO) TFTs fabricated by MFSS process without higher temperature post annealing showed very comparable electrical performance with those by DMS process with $400^{\circ}C$ post annealing. They are important to note that the bombardment of a negative oxygen ion which is accelerated by dc self-bias during rf sputtering could degrade the electrical performance of ITO electrodes and a-IGZO TFTs. Finally, we found that reduction of damage from the high energy negative oxygen ions bombardment drives improvement of crystalline structure in the ITO thin film and suppression of the sub-gab states in a-IGZO semiconductor thin film. For realization of organic flexible electronic devices based on plastic substrates, gas barrier coatings are required to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency flexible AMOLEDs needs an extremely low water vapor transition rate (WVTR) of $1{\times}10^{-6}gm^{-2}day^{-1}$. The key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required (under ${\sim}10^{-6}gm^{-2}day^{-1}$) is the suppression of nano-sized defect sites and gas diffusion pathways among the grain boundaries. For formation of high quality single inorganic gas barrier layer, we developed high density nano-structured Al2O3 single gas barrier layer usinga NBAS process. The NBAS process can continuously change crystalline structures from an amorphous phase to a nano- crystalline phase with various grain sizes in a single inorganic thin film. As a result, the water vapor transmission rates (WVTR) of the NBAS processed $Al_2O_3$ gas barrier film have improved order of magnitude compared with that of conventional $Al_2O_3$ layers made by the RF magnetron sputteringprocess under the same sputtering conditions; the WVTR of the NBAS processed $Al_2O_3$ gas barrier film was about $5{\times}10^{-6}g/m^2/day$ by just single layer.

• Korean Chemical Engineering Research
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• 제48권2호
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• pp.275-282
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• 2010

아염소산나트륨($NaClO_2$)의 무격막 전기분해(un-divided electrolysis)에 의한 이산화염소(chlorine dioxide; $ClO_2$) 제조에서 양전극(anode) 재질에 따른 이산화염소수 발생특성을 조사하였다. 양전극으로는 $IrO_2$-coated Ti, $RuO_2$-coated Ti, DSA(dimensionally stable anode) 전극을 사용하였으며, 음전극으로는 Pt-coated Ti 전극을 사용하였다. 다양한 양전극을 사용한 무격막 전해셀(un-divided electrochemical cell) 시스템에서 이산화염소의 전구체인 아염소산나트륨 ($NaClO_2$) 농도, 전해질로 사용된 염화나트륨(NaCl) 농도 그리고 전구체 용액의 전해셀 체류시간(cell residence time;$t_R$), 전구체 용액의 초기 pH 그리고 무격막 전해셀에 공급된 전류(current; A)와 같은 운전 파라미터가 이산화염소수 발생에 미치는 영향을 조사하고 최적 운전조건을 도출하였다. $IrO_2$-coated Ti, $RuO_2$-coated Ti 그리고 DSA 양전극 시스템에서 최적 전해셀 체류시간은 각각 약 2.27, 1.52, 1.52 s, 전구체 용액의 초기 pH는 약 2.3, 최적 아염소산나트륨 농도는 $IrO_2$-coated Ti와 $RuO_2$-coated Ti 양전극 시스템이 약 0.43 g/L, DSA 양전극 시스템이 약 0.32 g/L 그리고 최적전해질 농도는 약 5.85 g/L로 나타났으며 무격막 전해셀에 공급된 최적 전류는 약 0.6 A로 나타났다. 산출된 최적 무격막 전해셀 조건에서 이산화염소수 발생을 위한 $IrO_2$-coated Ti, $RuO_2$-coated Ti 그리고 DSA 양전극 시스템의 전류효율(current efficiency; C.E.%)과 에너지 소모율(energy consumption; E.C. $W{\cdot}hr/g-ClO_2$)은 각각 약 79.80, 114.70, 70.99% 그리고 1.38, 1.03, $1.61W{\cdot}hr/g-ClO_2$로 나타났다.

• 대한치과보철학회지
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• 제33권3호
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• pp.584-609
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• 1995

The purpose of this study was to evaluate the difference of the galvanic corrosion behaviour of the titanium in contact with gold alloy, silva-palladium alloy, and nickel-chromium alloy using the immersion and electrochemical method. And the effects of galvallit couples between titanium and the dental alloys were assessed for their usefulness as materials for superstructure. The immersion method was performed by measuring the amount of metal elementsreleased by Inductivey coupled plasma emission spectroscopy(ICPES) The specimen of fifteen titanium plates, the five gold alloy, five silver-palladium, five nickel-chromium plates, and twenty acrylic resin plates ware fabricated, and also the specimen of sixty titanium plugs, the thirty gold alloy, thirty silver-palladium, and nickelc-hromium plugs were made. Thereafter, each plug of gold alloy, silver-palladium, and nickel-chromium inserted into the the titanium and acrylic resin plate, and also titanium plug inserted into the acrylic resin plate. The combination specimens uf galvanic couples immersed in 70m1 artificial saliva solution, and also specimens of four type alloy(that is, titanium, gold, silver-palladium and nickel-chromium alloy) plugs were immersed solely in 70m1 artificial sativa solution. The amount of metal elements released was observed during 21 weeks in the interval of each seven week. The electrochemical method was performed using computer-controlled potentiosta(Autostat 251. Sycopel Sicentific Ltd., U.K). The wax patterns(diameter 11.0mm, thickness,in 1.5mm) of four dental casting alloys were casted by centrifugal method and embedded in self-curing acrylic resin to be about $1.0cm^2$ of exposed surface area. Embedded specimens were polished with silicone carbide paper to #2,000, and ultrasonically cleaned. The working electrode is the specimen of four dental casting alloys, the reference electrode is a saturated calmel electrode(SCE) and the ounter electrode is made of platinum plate. In the artificial saliva solution, the potential scanning was carried out starting from-700mV(SCE) TO +1,000mV(SCE) and the scan rate was 75mV/min. Each polarization curve of alloy was recorded automatically on a logrithmic graphic paper by XY recorder. From the polarization curves of each galvanic couple, corrosion potential and corrosion rates, that is, corrosion density were compared and order of corrosion tendency was determined. From the experiments, the following results were obtained : 1. In the case of immersing titanium, gold alloy, silver-palladium alloy, and nickel-chromium alloysolely in the artificial saliva solution(group 1, 2, 3, and 4), the total amount of metal elements released was that group 4 was greater about 2, 3 times than group 3, and about 7.8 times than group 2. In the case of group 1, the amount of titanium released was not found after 8 week(p<0.001). 2. In the case of galvanic couples of titanium in contact with alloy(group 5, 6), the total amount of metal elements released of group 5 and 6 was less than that of group 7, 8, 9, and 10(p<0.05). 3. In the case of galvanic couples of titanium in contact with silver-palladium alloy(group 7, 8), the total amount of metal elements released of group 7 was greater about twice than that of group 5, and that of group 8 was about 14 times than that of group 6(p<0.05). 4. In the case of galvanic couples of titanium in contact with nickel-chromium alloy(group 9, 10), the total amount of metal elements released of group 9 and 10 was greater about 1.8-3.2 times than that of group 7 and 8, and was greater about 4.3~25 times than that of group 5 and 6(p<0.05). 5. In the effect of galvanic corrosion according to the difference of the area ratio of cathode and anode, the total amount of metal elements released was that group 5 was greater about 4 times than group 6, group 8 was greater about twice than group 7, and group 10 was greater about 1.5 times than group 9(p<0.05). 6. In the effect of galvanic corrosion according to the elasped time during 21 week in the interval of each 7 week, the amount of metal elements released was decreased markedly in the case of galvanic couples of the titanium in contact with gold alloy and silver-palladium alloy but the total amount of nickel and beryllium released was not decreased markedly in the case of galvanic couples of the titanium in contact with nickel-chromium alloy(p<0.05). 7. In the case of galvanic couples of titanium in contact with gold alloy, galvanic current was lower than any other galvanic couple. 8. In the case of galvanic couples of titanium in contact with nickel-chromium alloy, galvanic current was highest among other galvanic couples.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2000년도 추계학술발표회 초록집
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• pp.3-4
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• 2000

Many researchers are interested in the synthesis and characterization of carbon nitride and diamond-like carbon (DLq because they show excellent mechanical properties such as low friction and high wear resistance and excellent electrical properties such as controllable electical resistivity and good field electron emission. We have deposited amorphous carbon nitride (a-C:N) thin films and DLC thin films by shielded arc ion plating (SAIP) and evaluated the structural and tribological properties. The application of appropriate negative bias on substrates is effective to increase the film hardness and wear resistance. This paper reports on the deposition and tribological OLC films in relation to the substrate bias voltage (Vs). films are compared with those of the OLC films. A high purity sintered graphite target was mounted on a cathode as a carbon source. Nitrogen or argon was introduced into a deposition chamber through each mass flow controller. After the initiation of an arc plasma at 60 A and 1 Pa, the target surface was heated and evaporated by the plasma. Carbon atoms and clusters evaporated from the target were ionized partially and reacted with activated nitrogen species, and a carbon nitride film was deposited onto a Si (100) substrate when we used nitrogen as a reactant gas. The surface of the growing film also reacted with activated nitrogen species. Carbon macropartic1es (0.1 -100 maicro-m) evaporated from the target at the same time were not ionized and did not react fully with nitrogen species. These macroparticles interfered with the formation of the carbon nitride film. Therefore we set a shielding plate made of stainless steel between the target and the substrate to trap the macropartic1es. This shielding method is very effective to prepare smooth a-CN films. We, therefore, call this method "shielded arc ion plating (SAIP)". For the deposition of DLC films we used argon instead of nitrogen. Films of about 150 nm in thickness were deposited onto Si substrates. Their structures, chemical compositions and chemical bonding states were analyzed by using X-ray diffraction, Raman spectroscopy, X-ray photoelectron spectroscopy and infrared spectroscopy. Hardness of the films was measured with a nanointender interfaced with an atomic force microscope (AFM). A Berkovich-type diamond tip whose radius was less than 100 nm was used for the measurement. A force-displacement curve of each film was measured at a peak load force of 250 maicro-N. Load, hold and unload times for each indentation were 2.5, 0 and 2.5 s, respectively. Hardness of each film was determined from five force-displacement curves. Wear resistance of the films was analyzed as follows. First, each film surface was scanned with the diamond tip at a constant load force of 20 maicro-N. The tip scanning was repeated 30 times in a 1 urn-square region with 512 lines at a scanning rate of 2 um/ s. After this tip-scanning, the film surface was observed in the AFM mode at a constant force of 5 maicro-N with the same Berkovich-type tip. The hardness of a-CN films was less dependent on Vs. The hardness of the film deposited at Vs=O V in a nitrogen plasma was about 10 GPa and almost similar to that of Si. It slightly increased to 12 - 15 GPa when a bias voltage of -100 - -500 V was applied to the substrate with showing its maximum at Vs=-300 V. The film deposited at Vs=O V was least wear resistant which was consistent with its lowest hardness. The biased films became more wear resistant. Particularly the film deposited at Vs=-300 V showed remarkable wear resistance. Its wear depth was too shallow to be measured with AFM. On the other hand, the DLC film, deposited at Vs=-l00 V in an argon plasma, whose hardness was 35 GPa was obviously worn under the same wear test conditions. The a-C:N films show higher wear resistance than DLC films and are useful for wear resistant coatings on various mechanical and electronic parts.nic parts.