• 한국신재생에너지학회:학술대회논문집
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• 2011.05a
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• pp.122.2-122.2
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• 2011

결정질 태양전지 제작에서, passavtion은 표면의 반사도를 줄여주는 반사 방지막의 역할과 표면의 dangling bond를 감소시켜, 표면 재결합 속도를 줄이고 minority carrier lifetime을 증가하는 데 큰 영향을 미친다. 그렇기 때문에 저가형 고효율 태양전지 제작에서 우수한 특성을 가지는 passivation막은 매우 중요한 이슈이다. 본 연구에서는 LBC(local back contact) 구조를 가지는 단결정 태양전지 후면에, 기존의 Full Al-BSF의 passivation 막을 SiNx와 ONO passivation 막으로 각각 대체하여, LBC 구조에서 더 적합한 passivation 막을 찾고자 하였다. SiNx와 ONO passivation 막은 단결정 LBC 구조 태양전지 후면에 각각 형성되었고 $800^{\circ}C$, 20 sec 조건으로 소성되었다. 실험결과는 minority carrier lifetime과 surface recombination velocity로 관찰하였다. 그 결과, SiNx passivation 막의 표면 재결합 속도는 29.7cm/s이고, ONO passivation 막의 표면 재결합 속도는 24.5cm/s로, Full Al-BSF 표면 재결합 속도 750cm/s에 비해 더 적합한 passivation 막으로 확인할 수 있었다. 결과적으로 SiNx,ONO passivation 막이 Full Al-BSF보다 전극에 수집되는 캐리어의 양이 많아짐에 따라 효율향상을 가져올 수 있을 것이다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.6
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• pp.321-326
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• 2016

Minimizing the carrier recombination and electrical loss through surface passivation is required for high efficiency c-Si solar cell. Usually, $SiN_X$, $SiO_X$, $SiON_X$ and $AlO_X$ layers are used as passivation layer in solar cell application. Silicon oxide layer is one of the good passivation layer in Si based solar cell application. It has good selective carrier, low interface state density, good thermal stability and tunneling effect. Recently tunneling based passivation layer is used for high efficiency Si solar cell such as HIT, TOPCon and TRIEX structure. In this paper, we focused on silicon oxide grown by various the method (thermal, wet-chemical, plasma) and passivation effect in c-Si solar cell.

• Korean Journal of Materials Research
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• v.9 no.6
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• pp.564-568
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• 1999

The 8-hydroxyquinoline Zinc(Znq2) were prepared successfully from zinc chloride and zinc acetate as two kinds of starting material. The organic electroluminescent devices(ELDs) were fabricated by the structure of ITO/TPD/Znq2/Al with N-N'-diphenyl-N-N'-bis(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine(TPD) which acts hole trasporting layer and bis(8-oxyquinolino) zinc(II)(Znq2) which acts as emission and electron transporting layer. EL efficiency of Znq2 prepared by heating was investigated. The 570nm of main emission peak which is yellowich green was investigated by photo luminesence(PL) and this results shows that electro luminescence(EL) is from Znq2. The V-J curve shows that carrier injection were investigated from 4V. Maximum luminance and luminance efficiency were 1600cd/$\m^2$, 0.9lm/W. From this results, the Znq2 can be one of the useful organic EL material.

• Journal of Electrochemical Science and Technology
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• v.15 no.2
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• pp.276-290
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• 2024

A study of the transition from transitory state to steady state in DSSCs based on natural dyes is presented; cochineal was used as dye and Li⁺, Na⁺, and K⁺ were the ions added to the electrolyte. The photocurrent profiles were obtained as a function of time. Several DSSCs were prepared with different cations and their role and the transitory-to-steady transition was determined. A novel hybrid charge carrier source model based on the Heaviside function H(t) and the Lambert-Beer law, was developed and applied to analysis of the transient response of the output photocurrent. Additionally, the maximum effective light absorption coefficient α and the electronic extraction rate κ for each ion were determined: ${\alpha}_{Li^+,Na^+,K^+}\,=\,(0.486,\,0.00085,\,0.1126)\,cm^{-1}$, and also the electronic extraction rate ${\kappa}^{Li^+,Na^+,K^+}_{ext.}\,=\,(1410,\,19.07,\,19.69)\,cm\,s^{-1}$. The impedance model using Fick's second law was developed for carrier recombination to characterize the photocurrent.

• Journal of the Korean Society for Precision Engineering
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• v.19 no.6
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• pp.145-154
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• 2002

CMP (Chemical mechanical polishing) process was used to control the fine grinding process induced mechanical damage of Cz Silicon wafer. Characterization of mechanical damage was carried out using Nomarski microscope, magic mirror and also using angle lapping and lifetime scanner evaluation after heat treatment. Magic mirror and lifetime scanner were very useful for the residual damage pattern characterization and CMP process was effective on the reduction of fine grinding induced mechanical damage.

• Journal of Microbiology and Biotechnology
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• v.26 no.4
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• pp.725-729
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• 2016

A novel genome-engineering tool in Clostridium acetobutylicum was developed based on single-crossover homologous recombination. A small-sized non-replicable plasmid, pHKO1, was designed for efficient integration into the C. acetobutylicum genome. The integrated pHKO1 plasmid backbone, which included an antibiotic resistance gene, can be excised in vivo by Flp recombinase, leaving a single flippase recognition target sequence in the middle of the targeted gene. Since the pSHL-FLP plasmid, the carrier of the Flp recombinase gene, employed the segregationally unstable pAMβ1 replicon, the plasmid was rapidly cured from the mutant C. acetobutylicum. Consequently, our method makes it easier to engineer C. acetobutylicum.

• Journal of Electrochemical Science and Technology
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• v.7 no.1
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• pp.1-12
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• 2016

The production of oxygen and hydrogen from solar water splitting has been considered to be an ultimate solution for energy and environmental issues, and over the past few years, nano-sized semiconducting metal oxides alone and with graphene have been shown to have great promise for use in photocatalytic water splitting. It is challenging to find ideal materials for photoelectrochemical water splitting, and these have limited commercial applicability due to critical factors, including their physico-chemical properties, the rate of charge-carrier recombination and limited light absorption. This review article discusses these main features, and recent research progress and major factors affect the performance of the water splitting reaction. The mechanism behind these interactions in transition metal oxides and graphene based nano-structured semiconductors upon illumination has been discussed in detail, and such characteristics are relevant to the design of materials with a superior photocatalytic response towards UV and visible light.

• International Journal of Precision Engineering and Manufacturing
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• v.7 no.2
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• pp.52-55
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• 2006

The OLEDs(Organic Light-Emitting Diodes) structure organizes the bottom layer using glass, ITO(indium thin oxide), hole injection layer, hole transport layer, emitting material layer, electron transport layer, electron injection layer and cathode using metal. OLED has various advantages. OLEDs research has been divided into structural side and emitting material side. The amount of emitting light and luminescence efficiency has been improved by continuing effort for emitting material layer. The emitting light mechanism of OLEDs consists of electrons and holes injected from cathode and anode recombination in emitting material layer. The mobilities of injected electrons and holes are different. The mobility of holes is faster than that of electrons. In order to get high luminescence efficiency by recombine electrons and holes, the balance of their mobility must be set. The more complex thin film structure of OLED becomes, the more understanding about physical phenomenon in each interface is needed. This paper observed what the thickness change of hole transport layer has an affection through the below experiments. Moreover, this paper uses numerical analysis about carrier transport layer thickness change on the basis of these experimental results that agree with simulation results.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.190.2-190.2
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• 2014

We report the origin of the improvement of the power conversion efficiency (PCE) of hybrid thin-film solar cells when a soluble C60 derivative, [6,6]-phenyl-$C_{61}$-butyric acid methyl ester (PCBM), is introduced as a hole-blocking layer. The PCBM layer could establish better interfacial contact by decreasing the reverse ark-saturation current density, resulting in a decrease in the probability of carrier recombination. The power conversion efficiency of this optimized device reached a maximum value of 8.34% and is the highest yet reported for hybrid thin-film solar cells.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.05a
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• pp.72-75
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• 1996

A hydride vapor phase epitaxy (HVPE) method is performed to prepare the GaN thin films on c-plane sapphire substrate. The full-width at half maximum of double crystal X-ray rocking curves from 20$\mu\textrm{m}$-thick GaN was 576 arcsecond. The photoluminescence spectrum measured 10 K shows the hallow bound exciton (I$_2$) line and weak donor-acceptor peak, however, there was not observed deep donor-acceptor pair recombination indicate the GaN crystals prepared in this study are of high purity and high crystalline quality. The GaN layer is n-type conducting with electron mobility of 72 $\textrm{cm}^2$/V$.$sec and with carrier concentration of 6 x 10$\^$18/cm/sup-3/.