• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.7
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• pp.21-29
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• 2004

Hot carrier degradation characteristics of Nano-scale CMOSFETs with dual gate oxide have been analyzed in depth. It is shown that, PMOSFET lifetime dominate the device lifetime than NMOSFET In Nano-scale CMOSFETs, that is, PMOSFET lifetime under CHC (Channel Hot Carrier) stress is much lower than NMOSFET lifetime under DAHC (Dram Avalanche Hot Carrier) stress. (In case of thin MOSFET, CHC stress showed severe degradation than DAHC for PMOSFET and DAHC than CHC for NMOSFET as well known.) Therefore, the interface trap generation due to enhanced hot hole injection will become a dominant degradation factor in upcoming Nano-scale CMOSFET technology. In case of PMOSFETs, CHC shows enhanced degradation than DAHC regardless of thin and thick PMOSFETs. However, what is important is that hot hole injection rather than hot electron injection play a important role in PMOSFET degradation i.e. threshold voltage increases and saturation drain current decreases due to the hot carrier stresses for both thin and thick PMOSFET. In case of thick MOSFET, the degradation by hot carrier is confirmed using charge pumping current method. Therefore, suppression of PMOSFET hot carrier degradation or hot hole injection is highly necessary to enhance overall device lifetime or circuit lifetime in Nano-scale CMOSFET technology

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.3
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• pp.169-172
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• 2020

In this paper, the effect of hot carrier injection on an n-bulk fin field-effect transistor (FinFET) is analyzed. The hot carrier injection method is applied to determine the performance change after injection in two ways, channel hot electron (CHE) and drain avalanche hot carrier (DAHC), which have the greatest effect at room temperature. The optimum condition for CHE injection is V_G=V_D, and the optimal condition for DAHC injection can be indirectly confirmed by measuring the peak value of the substrate current. Deterioration by DAHC injection affects not only hot electrons formed by impact ionization, but also hot holes, which has a greater impact on reliability than CHE. Further, we test the amount of drain voltage that can be withstood, and extracted the lifetime of the device. Under CHE injection conditions, the drain voltage was able to maintain a lifetime of more than 10 years at a maximum of 1.25 V, while DAHC was able to achieve a lifetime exceeding 10 years at a 1.05-V drain voltage, which is 0.2 V lower than that of CHE injection conditions.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2002.11a
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• pp.800-803
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• 2002

The MONOS capacitor are fabricated to investigate the carrier trapping due to Fowler-Nordheim tunneling injection. The carrier trapping in scaled multi-dielectric(ONO) depends on the nitride and Op oxide thickness under Fowler_Nordheim tunneling injection. Carriers captured at nitride film could not escape from nitride to gate, but be captured at top oxide and nitride interface traps because of barrier height of top oxide. Therefore, it is expected that the MONOS memory devices using multi dielectric films enhance memory effect and have a long memory retention characteristic.

• Journal of Electrical Engineering and Technology
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• v.13 no.6
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• pp.2421-2424
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• 2018

A direct measurement of an initiation carrier injection for a low voltage discharge is presented. A self-sustained pulsed discharge is utilized to characterize electrical responses of a glow discharge for varying amounts of injected initiation carriers. It is clearly demonstrated that the initiation carrier injection affects the ignition time and the breakdown voltage of the primary discharge. An abrupt reduction in the breakdown voltage for a $300{\mu}m$ gap pin-plate discharge is observed when a threshold carrier density of $3{\times}10^{11}cm^{-3}$ is injected and the breakdown voltage continues to decrease to 250 V with increasing the initiation carrier injection beyond the threshold density.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.14 no.8
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• pp.3625-3630
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• 2013

The modularization accomplished a big contribution in cost down and assembly-time shortening and the quality increase. But few improvements were made to this design largely due to the inflexibility of steel. In recent years, door modules made of PP-LFT material is manufactured using injection molding method. As a result, the plastic door modules allow more flexibility of door shape and become lighter. Warpage is generally large in the molded plastic door carrier plate due to the limitation of gate location and the fiber orientation. So after a few test injection the mold compensation processing for the improvement of an assembly characteristic. This research was performed to determine the factors that contribute to warpage for a injection-molded door carrier plate and presented differences in three mesh types of meshing method and its results. as a result we can improve process of tooling modification can reduce process of trial and error.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.67 no.1
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• pp.82-86
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• 2018

Low voltage atmospheric plasma generation using DBD Initiation carrier injection is reported. DBD afterglow was used as initiation carriers prior to a primary discharge and a significant reduction in the breakdown voltage of atmospheric discharge was observed when sufficient initiation carriers were provided. Quantative correlation study between the breakdown voltage and the initiation carriers suggests that the atmospheric breakdown voltage reduces to only half of the breakdown voltage for Townsend regime. Also, use of DBD initiation carrier injection likely offers better device reliability by protecting electrodes with a dielectric layer and thus suppressing electrode wear.

• Journal of Power Electronics
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• v.16 no.5
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• pp.1791-1801
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• 2016

This paper considers a carrier based signal injection method for use in the three shunt sensing inverter (TSSI) for sensorless motor control. It also analyzes the loss according to the injection axis of the voltage signal. To remove both the phase current and rotor position sensors, a sensorless method and a phase current reconstruction method can be simultaneously considered. However, an interaction between the two methods can be incurred when both methods inject voltage signals simultaneously. In this paper, a signal injection based sensorless method with the 120° OFF Discontinuous PWM (DPWM) is implemented in a TSSI to avoid this interaction problem. Since one leg does not have a switching event for one sampling period in the 120° OFF DPWM, the switching loss is altered according to the injection axis. The switching loss in the d-axis injection case can be up to 32% larger than that in the q-axis injection case. Other losses according to the injection axis are also analyzed.

• The Korean Journal of Pain
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• v.31 no.2
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• pp.102-108
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• 2018

Background: Nefopam is a non-opioid, non-steroidal analgesic drug with fewer adverse effects than narcotic analgesics and nonsteroidal anti-inflammatory drugs, and is widely used for postoperative pain control. Because nefopam sometimes causes side effects such as nausea, vomiting, somnolence, hyperhidrosis and injection-related pain, manufacturers are advised to infuse it slowly, over a duration of 15 minutes. Nevertheless, pain at the injection site is very common. Therefore, we investigated the effect of warmed carrier fluid on nefopam injection-induced pain. Methods: A total of 48 patients were randomly selected and allocated to either a control or a warming group. Warming was performed by diluting 40 mg of nefopam in 100 ml of normal saline heated to $31-32^{\circ}C$ using two fluid warmers. The control group was administered 40 mg of nefopam dissolved in 100 ml of normal saline stored at room temperature ($21-22^{\circ}C$) through the fluid warmers, but the fluid warmers were not activated. Results: The pain intensity was lower in the warming group than in the control group (P < 0.001). The pain severity and tolerance measurements also showed statistically significant differences between groups (P < 0.001). In the analysis of vital signs before and after the injection, the mean blood pressure after the injection differed significantly between the groups (P = 0.005), but the heart rate did not. The incidence of hypertension also showed a significant difference between groups (P = 0.017). Conclusions: Use of warmed carrier fluid for nefopam injection decreased injection-induced pain compared to mildly cool carrier fluid.

• The Transactions of the Korean Institute of Power Electronics
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• v.23 no.2
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• pp.139-146
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• 2018

This work puts forward a theoretical analysis on position estimation performance of interior permanent magnet synchronous motor (IPMSM) according to the injection frequency in carrier-based sensorless operation. The effects of spatial harmonics on inductance and voltage distortion due to the nonideal characteristics of IPMSM and inverter are examined as factors influencing the position estimation performance. Furthermore, the position estimation performance is analyzed by calculating the current at the switching instant in several operating conditions. In summary, the half switching frequency injection is more robust to the nonideal characteristics of IPMSM, especially with light load condition. The validity of the analysis is verified by the simulation and experimental results.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.9
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• pp.683-686
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• 1998

Hot carrier effects as a function of bias stress time and bias stress consitions were syste-matically investigated in p-channel poly-Si TFT s fabricated on the quartz substrate. The device degradation was observed for the negative bias stress, while improvement of electrical characteristic except for subthreshold slope was observed for the positive bias stress. It was found that these results were related to the hot-carrier injection into the gate oxide and interface states at the poly-Si/$SiO_2$interface rather than defects states generation within the poly-Si active layer under bias stress.