• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.450-453
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• 1999

In this paper, The relationship between device performance and channel length(1.5-50$\mu$m) in polysilicon thin-film transistors fabricated by SPC technology was Investigated by measuring electric Properties such as 1-V characteristics, field effect mobility, threshold voltage, subthreshold swing, and trap density in grain boundary with channel length. The drain current at ON-state increases with decreasing channel length due to increase of the drain field, while OFF-state current (leakage current) is independent of channel length. The field effect mobility decrease with channel length due to decreasing carrier life time by the avalanche injection of the carrier at high drain field. The threshold voltage and subthreshold swing decrease with channel length, and then increase in 1.5 $\mu$m increase of increase of trap density in grain boundary by impact ionization.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.29-32
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• 2000

In this paper, an analytical model for I-V characteristics of a HEMTs is Proposed. The developed model takes into account the temperature dependence of drain current. In high-speed ICs for optical communication systems and mobile communication systems, temperature variation affects performance; for example the gain, efficiency in analog circuits and the delay time, power consumption and noise mrgin in digital circuits. To design such a circuit taking into account the temperature dependence of the current-voltage characteristic is indispensible. This model based on the analytical relation between surface carrier density and Fermi potential including temperature dependent coefficients.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2008.11a
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• pp.749-750
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• 2008

• Proceedings of the KIEE Conference
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• 1998.07d
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• pp.1367-1369
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• 1998

To achieve the ULSI goals of higher density, greater performance and operation speed have been scaled down. However, the reduction of channel length cause undesirable problems such as drop of punchthrough voltage, hot-carrier degradation and high leakage current, etc.. It is shown that the device characteristics depend on process parameters. In this Paper, we catched hold of trends of hot-carrier effects and punchthrough voltages due to variation of some process parameters such as LDD doses(P), spacer lengths, channel doses($BF_2$) and $V_T$ adjusting channel implantation energies using design trend curve (DTC). As the LDD and channel doses increased, hot-carrier phenomena became more severe, and punchthrough voltage was decreased. It were represented that punchthrough and hot carrier effects were critically depend on LDD and channel doses.

• Journal of Communications and Networks
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• v.7 no.1
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• pp.21-28
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• 2005

In this paper, we analyze the performance of code division multiple access (CDMA) systems with orthogonal frequency division multiplexing (OFDM) that employ random spreading sequences in an additive white Gaussian noise (AWGN) channel. We obtain the probability density function (pdf) of the multiple access interference and extend the results to OFDM-CDMA systems to determine the pdf of multiple access and inter-carrier interference in terms of the number of users, the spreading length, the number of sub-carriers, and the frequency offset. We consider the synchronous downlink of cellular multi-carrier CDMA and derive a Gaussian approximation of the multiple access and inter-carrier interference. Overall the effect of frequency offset is shown to vary with the system loading. The analysis in this paper is critical for further development into fading channels and frequency selective multipath channels.

• Journal of the Society of Naval Architects of Korea
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• v.46 no.6
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• pp.650-658
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• 2009

Two dimensional sloshing phenomena in regularly excited liquid cargo tank are numerically simulated with finite difference method. Navier-Stokes equations and continuity equation are computed for this study. The free-surface is determined every time step satisfying kinematic boundary condition using marker-density method. And the exciting force is treated by adding the acceleration of the tank to source term. The results are compared with other existing experiment results. And the comparison results show a good agreement. The sloshing phenomena in the tank of the 138K LNG carrier in sway motion is simulated with present calculation methods in low filling level. To find the relations between impact pressure and excitation condition, the calculations are performed in various amplitudes and periods. The averaged maximum pressures are compared each other.

• Journal of Advanced Marine Engineering and Technology
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• v.36 no.8
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• pp.1076-1082
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• 2012

Today the welding for LNG carrier is known to be possible using arc and plasma arc welding process. But because of the lower energy density, arc welding is inevitable to multi-pass welding for thick plate and has a limit of welding speed compared to laser which is high energy density heat source. When thick plate is welded, weld defect by multi-pass welding and heat-affected zone by high heat-input were formed. Therefore one-pass welding by key-hole has been considered to work out the problems. It is possible for Laser, electron beam, plasma process to do key-hole welding. Nowadays, plasma process has been used for welding membrane of cargo tank for LNG carrier instead of arc process. Recently, many studies have examined to apply laser process to welding of membrane. In this paper, weldability, microstructure and mechanical properties of stainless steel for LNG carrier welded by fiber laser were compared to those by plasma. As a result, although the laser welding has several times faster speed, similar properties and smaller weld and heat affected zone were obtained. Consequently, this study proves the superiority of fiber laser welding for LNG carrier.

• Journal of the Semiconductor & Display Technology
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• v.12 no.4
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• pp.49-54
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• 2013

In this study, we have investigated the effect of the substrate temperature and oxygen flow rate on the characteristics of IZO thin films for the OLED (organic light emitting diodes) devices. For this purpose, IZO thin films were deposited by RF magnetron sputtering at room temperature and $300^{\circ}C$ with various $O_2$ flow rate. In order to investigate the influences of the oxygen, the flow rate of oxygen in argon mixing gas has been changed from 0.1sccm to 0.5sccm. IZO thin films deposited at room temperature show amorphous structure, whereas IZO thin films deposited at $300^{\circ}C$ show crystalline structure having an (222) preferential orientation regardless of $O_2$ flow rate. The electrical resistivity of IZO film increased with increasing flow rate of $O_2$ under Ar+$O_2$. The change of electrical resistivity with increasing flow rate of $O_2$ was mainly interpreted in terms of the charge carrier concentration rather than the charge carrier mobility. The electrical resistivity of the amorphous-IZO films deposited at R.T. was lower than that of the crystalline-IZO thin films deposited at $300^{\circ}C$. The change of electrical resistivity with increasing substrate temperature was mainly interpreted in terms of the charge carrier mobility rather than the charge carrier concentration. All the films showed the average transmittance over 85% in the visible range. The current density and the luminance of OLED devices with IZO thin films deposited at room temperature in 0.1sccm $O_2$ ambient gas are the highest amongst all other films. The optical band gap energy of IZO thin films plays a major role in OLED device performance, especially the current density and luminance.

• Korean Journal of Materials Research
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• v.20 no.5
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• pp.267-270
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• 2010

Sn doped $In_2O_3$ (ITO) and ITO/Cu/ITO (ICI) multilayer films were prepared on glass substrates with a reactive radio frequency (RF) magnetron sputter without intentional substrate heating, and then the influence of the Cu interlayer on the methanol gas sensitivity of the ICI films were considered. Although both ITO and ICI film sensors had the same thickness of 100 nm, the ICI sensors had a sandwich structure of ITO 50 nm/Cu 5 nm/ITO 45 nm. The ICI films showed a ten times higher carrier density than that of the pure ITO films. However, the Cu interlayer may also have caused the decrement of carrier mobility because the interfaces between the ITO and Cu interlayer acted as a barrier to carrier movement. Although the ICI films had two times a lower mobility than that of the pure ITO films, the ICI films had a higher conductivity of $3.6{\cdot}10^{-4}\;{\Omega}cm$ due to a higher carrier density. The changes in the sensitivity of the film sensors caused by methanol gas ranging from 50 to 500 ppm were measured at room temperature. The ICI sensors showed a higher gas sensitivity than that of the ITO single layer sensors. Finally, it can be concluded that the ICI film sensors have the potential to be used as improved methanol gas sensors.

• Journal of Physiology & Pathology in Korean Medicine
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• v.18 no.5
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• pp.1426-1436
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• 2004

There have been several reports on the relationship between G protein β3 subunit gene (GNB3), angiotensin converting enzyme gene (ACE), β3-adrenergic receptor gene (ADRB3), and β2-adrenergic receptor gene (ADRB2) genotype and obesity or obesity related disease. The objective of this study was to examine the relationship between the combinations of these four genes' polymorphism and probability of obesity related disease in Korean female subjects. The experimental group was consisted of 85 obese Korean female subjects (body mass index, BMI≥27㎏/㎡). To determine the polymorphism, genomic DNA was isolated, and PCR was performed. Serological examinations (fasting plasma glucose, FPG; aspartate aminotranferase, AST; alanine aminotransferase, ALT; total cholesterol, TC; triglyceride, TG; high density lipoprotein-cholesterol, HDL; low density lipoprotein-choles terol, LDL) were carried by an autoanalyzer and serological methods. BMI, waist circumference (WC), hip circumference and waist hip ratio (WHR) were measured. Consequencely in the analysis with grouping of general genotyping and variant allele carrier/non-carrier, the result was not significantly different within all gene combinations and polymorphic pairings except higher waist circumference in Arg16Arg group of ADRB2 codon16 (P=0.024). And there was no significantly contrast result about age, height, weight, AST and ALT that are index feature of liver and gall bladder disease in polymorphic pairings of gene combinations. However, the statistical analysis of waist-hip ratio and waist circumference that could be recognized as the physical type of obesity showed T-Arg16 pairing carrier in GNB3-ADRB2 codon16 combination had increased WHR and WC significantly (P=0.046 and P=0.015 respectively). Futhermore, the levels of total cholesterol (TC) and low density lipoprotein choresteral (LDL) were significantly lower in C-I pairing of GNB3-ACE combination (P=0.032 and P=0.005). These results suggest that the T-Arg16 pairing carrier in GNB3-ADRB2 codon16 gene might have increased waist circumference and C-I pairing carrier in GNB3-ACE combination have lower possibility of contraction of cardiovascular disease related cholesterol and LDL despite of obese state.