• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.5
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• pp.390-396
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• 2009

The present research was focused to investigate the quality of non-polar SiC substrates grown by a conventional PVT method for optoelectronic applications. The half part of the PVT-grown 6H-SiC crystal boules was sliced along a-direction and m-direction to extensively analyze non-polar planes and then remaining part of that was sliced along the basal plane to produce wafers. The non-polar SiC m-plane and a-plane exhibited apparent peaks around 2 theta=$120^{\circ}$((3-300) plane) and 2 theta=$60^{\circ}$ ((11-20) plane), respectively. FWHM values of m-plane measured along a-direction and c-direction were 60 arc see and 57 arcsec respectively, a-plane measured along m-direction and c-direction were 41 arcsec and 51 arcsec respectively. The typical absorption spectra of SiC crystals indicated that each of SiC crystals were the 6H-SiC with fundamental absorption energy of about 3.04 eV. Non-polar planes contained no micropipe on etched surface. The carrier concentration and mobility of non-polar SiC wafers have estimated by Raman spectrum. It was observed that the carrier mobility is low in the area far from seed crystal with compared to other places.

• Journal of the Korean Society for Precision Engineering
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• v.27 no.5
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• pp.56-62
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• 2010

This paper presents the development process of roof carrier assembly using a one side release system for a vehicle. An RV(Recreational Vehicle) or SUV(Sports Utility Vehicle) has a roof carrier system on an upper surface of a roof panel for loading large or long size baggage. Such a roof carrier system is comprised of a roof rack longitudinally mounted on a roof panel and cross bar perpendicularly installed in the horizontal direction. Several locking mechanisms used in most vehicle roof carrier systems are composed with both side releasable locking ones. The obvious drawback to this arrangement is that when the user desires to reposition the cross bar, first one of the locking members must be unlocked and then the user must walk around to the opposite side of the vehicle to unlock the other member. In this paper, we proposed a newly locking mechanism, which allows a user simultaneously place both locking members of the roof carrier in locked and unlocked positions. In order to estimate design compatibility, structural and modal analysis is performed. Furthermore, a prototype based on the proposed design has been made, and then durability test carried out. From the simulation and experimental results, the proposed roof carrier system is proved effective and safe.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.239-242
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• 2008

We have investigated the reliability of short channel ($L=1.5{\mu}m$) p-type ELA poly-Si TFTs under hot carrier stress. Threshold voltage of short channel TFT was significantly more shifted to positive direction than that of long channel TFT under the same stress. This result may be attributed to electron trapping at the interface between poly-Si film and gate oxide layer.

• Journal of the Korean Vacuum Society
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• v.12 no.S1
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• pp.36-39
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• 2003

Field-domain dynamics and current self-oscillations are theoretically studied in quantum-well (QW) negative-effective-mass (NEM) $p^{+}pp^{+}$ diodes when the electric field is applied along the direction of the well. The origin of current self-oscillations is the formation and traveling of electric-field domains in the p-base. We have accurately considered the scattering contributions from carrier-impurity, carrier-acoustic phonon, and carrier-optic phonon. It's indicated that, both the applied bias and the doping concentration largely influence the current patterns and self-oscillating frequencies, which lie in the THz range for the NEM $p^{+}pp^{+}$ diode with a submicrometer p-base. The complicated field-domain dynamics is presented with the applied bias as the controlling parameter.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.9
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• pp.732-736
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• 2009

Protons are irradiated into SOl wafers under total dose of 100 krad, 500 krad, 1 Mrad and 2 Mrad to analyze the irradiation effect. The electrical properties are analyzed by pseudo MOSFET technology after proton irradiation. The wafers are annealed to stabilize generated defects in a nitrogen atmosphere at $300^{\circ}C$ for 1 hour because proton irradiation induces a lot of unstable defects in the surface silicon film. Both negative and positive turn-on voltages are shifted to negative direction after the irradiation. The more proton total dose, the more turn on voltage shifts. It means that positive oxide trap charge is generated in the buried oxide(BOX). The minority carrier lifetime which is analyzed by the drain current transient characteristics decreases with the increase of proton total dose. The proton irradiation makes crystal defects in the silicon film, and consequently, the crystal defects reduce the carrier lifetime and mobility. As these results, it can be concluded that pseudo MOSFET is a useful technology for the analysis of irradiated SOI wafer.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.6
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• pp.59-66
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• 1995

The hot electron induced effective channel length modulation (${\Delta}L_{H}$) and HEIP characteristics in PMOSFET's after bidirectional stress are presented. Trapped electron charges in gate oxide and lateral field are calculated from the gate current model, and ${\Delta}L_{H}$(${\Delta}L_{HD},\;{\Delta}L_{HS}$) is calculated using trapped electron charges and lateral field. It has been found that ${\Delta}I_{d}$and ${\Delta}L_{H}$ are more affected by the stress order (Forward-Reverse of Reverse or Reverse-Forward) than the stress direction, and they vary logarithmically with the stress time. In contrast, ${\Delta}V_{t}$ and ${\Delta}V_{pt}$ are more affected by the stress direction thatn the stress order. The correlation between ${\Delta}V_{pt}$ and the stress time can be explanined as the following polynomial functin: ${\Delta}V_{pt}$=AT$^{n}$. It has also been shown that PMOSFET degradation is related with the gate current and the effects of ${\Delta}V_{pt}$ is the most significant.

• 제어로봇시스템학회:학술대회논문집
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• 1986.10a
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• pp.596-600
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• 1986

This paper describes a capacitively reading apparatus for determining the angular orientation, speed and/or direction of rotary objects such as shaft, dial hand, counter wheel and the like. The apparatus consists of sensing device and circuit accompanying with said sensing device. The sensing device is provided by arranging many stationary electrodes lying substantially on a surface of a stationary plane member and by arranging rotary electrode lying substantially on a surface of rotary objects to be monitored, in which said rotary electrode is in confronting relationship to some stationary electrodes so as to construct unique capacitors according to the angular position of rotary objects. The angular position of said rotary electrode is determined by sets of stationary electrodes which are in confronting relationship to rotary electrode. A carrier signal is generated by scanning device while scanning said stationarelectrodes, whose periods are in corresponding relationship to said stationary electrodes, respectively. The periods of carrier corresponding to the angular position of said rotary electrode is modulated by a modulation signal generated by detecting device according to said rotary electrode. This apparatus is applied to automatically monitor any kind of storage tank, as well as to automatically read the conventional utility meters such as Watthour meters, Gas meters, Water meters, etc..

• The Journal of Korean Institute of Communications and Information Sciences
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• v.38A no.3
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• pp.217-223
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• 2013

A digital retrodirective antenna system is easy to modify and upgrade because it can control the phase information of the output signal toward opposite direction to input signal without a priori knowledge of the arrival direction. Due to this advantage, it is possible to perform fast beam tracking. In this paper, a design digital retrosirective array antenna system according to the number of antenna array by using only one digital PLL which finds angle of delayed phase and we test BER performance of this system. When we transmit data at actual communication system, the data modulated onto carrier frequency in order to shift spectrum from base band to another band. So we simulate system considering carrier frequency according to the number of antenna array. As a result, carrier frequency has no impact on the performance.

• Archives of Pharmacal Research
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• v.29 no.5
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• pp.424-429
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• 2006

In the present study, a human mammary epithelial cell (HMEC) culture model was developed to evaluate the potential involvement of carrier-mediated transport systems in drug transfer into milk. Trypsin-resistant HMECs were seeded on $Matrigel^{circledR}-coated$ filters to develop monolayers of functionally differentiated HMEC. Expression of the specific function of HMEC monolayers was dependent of the number of trypsin treatments. Among the monolayers with different numbers of treatment (treated 1 to 3 times), the monolayer treated 3 times (3-t-HMEC monolayer) showed the highest maximal transepithelial resistance and expression of $\beta-casein$ mRNA as an index of differentiation. Transport of tetraethylammonium (TEA) across the 3-t-HMEC monolayer in the basolateral-to-apical direction was significantly higher than that in the apical-to-basolateral direction (p<0.05), whereas such directionality was not observed for p-aminohippurate, suggesting the existence of organic cation transporters, but not organic anion transporters. In fact, expression of mRNAs of human organic cation transporter (OCT) 1 and 3 were detected in the 3-t-HMEC monolayer. These results indicate that the 3-t-HMEC monolayer is potentially useful for the evaluation of carrier-mediated secretion of drugs including organic cations into human milk.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.10 no.8
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• pp.1832-1838
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• 2009

In this paper, we present new signal de-interleaving method for the frequency agility radar in which the carrier frequency is changed irregularly. Generally radar use a fixed carrier frequency, and it is easy for electronic warfare system to de-interleave the radar signal with respect to the frequency, pulse width(PW), and direction of signal arriving(DOA). In frequency agility radar, it is difficult to de-interleave the radar signals according to the carrier frequency because the frequency is changed irregularly. We suggest a good de-interleaving method to identify the frequency agility radar signals in comparison with PRI's of radars. First we calculate pulse repeat Interval(PRI) of radar in linked-list and queue structure and de-interleave the radar signals with PRI, PW, and DOA, then identify the frequency agility radar. When we use the proposed algorism to the frequency agility radar, we have a good de-interleaving results with electronic warfare systems.