• Journal of Radiopharmaceuticals and Molecular Probes
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• v.4 no.2
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• pp.115-120
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• 2018

In recent years, many researchers have attempted to make use of 2D nanoparticles as molecular imaging probes since extensive investigations proved that 2D nanoparticles in the body tends to accumulate certain lesions by enhanced permeability and retention (EPR) effect. For example, graphene and carbon nitride which have high surface area and modifiable properties showed good biocompatibility and targetability when it used as imaging probes. However, poor dispersibility in physiological mediums and its uncontrolled size limited its usage in bio-application. Therefore, oxidation process and mechanical exfoliation have been developed for overcoming these problems. In this paper, we highlight the several major methods to synthesize biocompatible 2D nanomaterials like graphene and carbon nitride especially for molecular imaging study including positron emission tomography (PET).

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1244_1245
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• 2009

Coating of amorphous nitride thin layers, such as boron nitride (BN) and carbon nitride (CN), has been performed on carbon nanotubes (CNTs) for the purpose of enhancing their electron-emission performances because those nitride films have relatively low work functions and commonly exhibit negative electron affinity behavior. The CNTs were directly grown on metal-tip (tungsten, approximately 500 nm in diameter at the summit part) substrates by inductively coupled plasma-chemical vapor deposition (ICP-CVD). Sharpening of the tungsten tips were carried out by electrochemical etching. Morphologies and microstructures of BN and CN films were analyzed by field-emission scanning electron microscopy (FE-SEM), energy dispersive x-ray (EDX) spectroscopy, and Raman spectroscopy. The electron-emission properties (such as maximum emission currents and turn-on fields) of the BN-coated and CN-coated CNT-emitters were characterized in terms of the thickness of BN and CN layers.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.59 no.4
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• pp.743-748
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• 2010

Boron nitride (BN) and carbon nitride (CN) films, which have relatively low work functions and commonly exhibit negative electron affinity behaviors, were coated on carbon nanotubes (CNTs) by magnetron sputtering. The CNTs were directly grown on metal-tip (tungsten, approximately 500nm in diameter at the summit part) substrates by inductively coupled plasma-chemical vapor deposition (ICP-CVD). The variations in the morphology and microstructure of CNTs due to coating of the BN and CN films were analyzed by field-emission scanning electron microscopy (FE-SEM). The energy dispersive x-ray (EDX) spectroscopy and Raman spectroscopy were used to identify the existence of the coated layers (CN and BN) on CNTs. The electron-emission properties of the BN-coated and CN-coated CNT-emitters were characterized using a high-vacuum field emission measurement system, in terms of their maximum emission currents ($I_{max}$) at 1kV and turn-on voltage ($V_{on}$) for approaching $1{\mu}A$. The results showed that the $I_{max}$ current was significantly increased and the $V_{on}$ voltage were remarkably reduced by the coating of CN or BN films. The measured values of $I_{max}-V_{on}$ were as follows; $176{\mu}A$-500V for the 5nm CN-coated emitter and $289{\mu}A$-540V for the 2nm BN-coated emitter, respectively, while the $I_{max}-V_{on}$ of the as-grown (i.e., uncoated) emitter was $134{\mu}A$-620V. In addition, the CNT emitters coated with thin CN or BN films also showed much better long-term (up to 25h) stability behaviors in electron emission, as compared with the conventional CNT emitter.

• Journal of the Korean Ceramic Society
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• v.40 no.8
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• pp.720-724
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• 2003

Aluminum nitride (AlN) powders were synthesized by using a mixture of an aluminum nitrate or sulfate salt and carbon (mole ratio of $Al^{3+}$ to carbon=L : 30). The AlN was obtained by calcining the mixture under a flow of nitrogen in the temperature range 1100-1$600^{\circ}C$ and then burning out the residual carbon. The process of conversion of the salt to AlN was monitored by XRD and $^{27}$ Al magic-angle spinning (MAS) NMR spectroscopy. The salt decomposed to ${\gamma}$-alumina and then converted to AlN without phase transition from ${\gamma}$-to-$\alpha$-alumina. $^{27}$ Al MAS NMR spectroscopy shows that the formation of AlN commenced at 110$0^{\circ}C$. AlN powders obtained from the sulfate salt were superior to those from the nitrate salt in terms of homogeneity and crystallinity. A very small amount of AlN whiskers was obtained by calcining a mixture of an aluminum sulfate salt and carbon at 115$0^{\circ}C$ for 40 h, and the growth of the whiskers is well explained by the particle-to-particle self-assembly mechanism.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2003.10a
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• pp.53-53
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• 2003

유도 결합 플라즈마는 비교적 간단한 방법으로 1$\times$$10^{10}$㎤ 이상의 높은 플라즈마 밀도, 저용량 결합(low capacitive coupling), 대면적 균일성을 제공하기 때문에 플라즈마 공정의 관점에서 매우 효율적이다. 따라서 유도 결합 플라즈마의 이러한 장점들은 화학적 기상 증착법으로 적용하였을 때 코팅의 특성을 향상시키는데 매우 유리할 것으로 생각된다. 특히, 좋은 특성을 가진 carbon nitride 박막을 제조하기 위해서 높은 밀도를 이용한 반응 기체의 분해와 상온에서의 증착이 필수적인데, 유도 결합 플라즈마 공정은 이런 점에서 매우 효과적이다.

• Journal of the Korean Society for Precision Engineering
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• v.21 no.6
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• pp.22-27
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• 2004

특성에 대한 많은 연구가 진행되었고, 새로운 나노 소자로서의 가능성을 보여왔다. CNT의 전기적 성질은 직경과 chirality 의 함수로서 금속 혹은 반도체 성질을 주기적으로 가지며, 이론적 연구에 의하면 단일구역의 CNT 는 1/3 이 금속성, 나머지는 밴드갭이 수 ㎷ 로 아주 작고, 나노튜브의 직경에 반비례하는 반도체 성질을 나타낸다.(중략)

• Journal of the Korean Magnetics Society
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• v.18 no.1
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• pp.32-35
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• 2008

Thermally stable diffusion barrier of tungsten carbon nitride(W-C-N) and of tungsten boron carbon nitride(W-B-C-N) thin films have studied to investigate the impurity behaviors of boron and nitrogen. In this paper we newly deposited tungsten boron carbon nitride(W-B-C-N) thin film for various $W_2B$ target power on silicon substrate. The impurities of the 100nm-thick W-C-N and W-B-C-N thin films provide stuffing effect for preventing the inter-diffusion between W-C-N or W-B-C-N thin films and silicon during the high temperature($700^{\circ}C{\sim}1000^{\circ}C$) annealing process.

• Journal of Powder Materials
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• v.13 no.6 s.59
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• pp.432-438
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• 2006

Aluminum nitride (AlN) nanopowders with low degree of agglomeration and uniform particle size were synthesized by carbothermal reduction of alumina and subsequent direct nitridization. Boehmite powder was homogeneously admixed with carbon black nanopowders by ball milling. The powder mixture was treated under ammonia atmosphere to synthesize AlN powder at lour temperature. The effect of process variables such as boehmite/carbon black powder ratio, reaction temperature and reaction time on the synthesis of AlN nanopowder was investigated.

• Journal of the Korean Ceramic Society
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• v.33 no.4
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• pp.455-463
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• 1996

Aluminium nitride (AlN) powder was prepared by using aluminium (III) complexes with dibasic carboxylate ligands(adipato)(hydroxo) aluminium(III) and (hydroxo)(succinato)aluminium (III) as a precursor. The AlN pow-der was obtained by calcining the complexes without mixing any carbon source under a flow of ammonia at 120$0^{\circ}C$ Contary to the conventional carbothermal reduction and nitridiation the process of decarboniza-tion of the residual carbon was not required because of the reaction of ammonia with carbon at temperature >100$0^{\circ}C$. Fine AlN powder was also prepared by calcining a mixture of an (adipato)(hydroxo)aluminium(III) complex and carbon under a flow of nitrogen at 140$0^{\circ}C$ The AlN powders prepared were ultrafine and their morphology was almost the same as that of powders of two precursors.

• Journal of the Semiconductor & Display Technology
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• v.6 no.1 s.18
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• pp.27-30
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• 2007

The gigahertz oscillator behavior of double-walled boron-nitride nanotube (BNNT) was investigated by using classical molecular dynamics simulations. The BNNT oscillator characteristics were compared to carbon-nanotube (CNT) and hybrid-C@BNNT oscillators. The results show that the BNNT oscillators are higher than the van der Waals force of the CNT oscillator. Since the frictional effects of BNNT oscillators are higher than that of a CNT oscillator, the damping factors of BNNT and hybrid oscillators are higher than that of a CNT oscillator.