• 한국진공학회지
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• 제17권2호
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• pp.117-121
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• 2008

탄소계열의 SiOC 박막은 화학적 증착방법으로 bistrimethylsilylmethane와 산소의 혼합개스를 사용하여 증착하였다. SiOC 박막의 화학적인 특성은 FTIR 분석을 이용하였으며, I-V 측정법을 이용하여 비교하였다. $950\sim1200\;cm^{-1}$ 영역에서 생기는 결합들은 Si-C 결합, Si-O-C 결합과 Si-O 결합으로 이루어졌으며, SiOC 박막의 누설전류는 탄소함량이 증가함에 따라서 증가하였다. 그리고 누설전류는 Si-O-C 결합의 함량과 유사한 경향성을 나타냈다. FTIR 분석에서 디컨벌류션한 데이터는 SiOC 박막이 3가지 특성이 있는 것을 확인할 수 있었으며, 접촉각은 이러한 3가지 유형에 대한 차이점을 보여주었다.

• 한국결정학회지
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• 제6권2호
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• pp.111-117
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• 1995

화학증착법에 의해 TiO2 박막을 Si-wafer(100)위에 제조하였다. Titanium tetraisopropoxide (TTIP)를 출발물질로 하여 200-500℃의 온도범위에서 증착을 행하였다. 증착된 박막의 두께는 Ellipsometry 및 SEM을 사용하여 측정하였으며, 산소의 함량에 따른 증착층의 성분분석은 ESCA를 사용하였다. TiO2 박막의 증착속도는 산소의 함량에 따라 증가하였고, 반응가스인 산소를 공급하지 않았을 때 증착층내에 불순물로 탄소가 존재하였으며, 증착층의 성분은 내부로 갈수록 TiO2에서 Ti로 변하였다. 산소를 600scm 공급하였을 때 증착층내에 소량의 탄소가 존재하였으며, 증착층의 성분은 내부로 갈수록 TiO2에서 TiO, Ti로 됨을 알 수 있었다. 산소를 1200scm공급하였을 때 증착층내에 탄소가 존재하지 않았으며, 증착층 성분은 표면에는 TiO2를 이루나 증착층 내부로 갈수록 Ti복합화합물을 이루고 있었다.

• 한국전기전자재료학회논문지
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• 제28권11호
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• pp.727-730
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• 2015

In this paper, we fabricated organic compounds detector using the MWCNT/PMMA (multi-walled carbon nanotube / polymethylmethacrylate) composite film. We used polymer film as a matrix material for the device framework, and introduced CNTs for reacting with the organic compounds resulting in changing electrical conductivity. Spray coating method was used to form the MWCNT/PMMA composite film detector, and pattern formation of the detector was done by shadow mask during the spray coating process. We investigated changes of electrical conductivity of the detector before and after the organic compounds exposure. Electrical conductivity of the detector tended to decrease after the exposure with various organic compounds such as acetone, tetrahydrofuran (THF), toluene, and dimethylformamide (DMF). Finally we conclude that organic compounds detection by the MWCNT/PMMA composite film detector was possible, and expect the feasibility of commercial MWCNT/PMMA composite film detector for various organic compounds.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.301-301
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• 2008

Ion beam (IB)-induced alignment of inorganic materials has been investigated intensively as it provides controllability in a nonstop process for producing high-resolution displays[1][2]. LC orientation via ion-beam (IB) irradiation on the nitrogen doped diamond like carbon (NDLC) thin film deposited by physical deposition method-sputtering was embodied. The NDLC thin film that was deposited by sputter showed uniform LC alignment at the 1200eV of the ion beam intensity. The pretilt angle of LC on NDLC thin films was measured with various IB exposure time and angle. The maximum pretilt angle were showed with IB irradiation angle of $45^{\circ}$ and exposure time of 62.5 sec, respectively. To show NDLC thin film stability in high temperature, thermal stability test was proceeded. The uppermost of the thermal stability of NDLC thin film was $200^{\circ}C$. In this investigation, the electro-optical (EO) characteristics of LC on NDLC thin film were measured.

• Transactions on Electrical and Electronic Materials
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• 제12권3호
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• pp.89-92
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• 2011

Hydrogenated amorphous carbon (a-C:H) films were deposited by plasma enhanced chemical vapor deposition on silicon substrates. a-C:H thin film was irradiated to a typical He-Cd laser to study its emitting properties. The photoluminescence (PL) intensity during the irradiation achieved a maximum value when 2,000 seconds elapsed. Fourier transform infrared measurement revealed a-C:H thin film suffered transformation from a polymer-like to graphite-like phase during laser irradiation. Thermal annealing was done at various temperatures, ranging from room temperature to $400^{\circ}C$ in the atmosphere, to investigate structural changes in a-C:H film by heat generation during the emission. PL intensity of a-C:H thin film increased 1.5 times without apparent structural change, as annealing temperature increased up to $200^{\circ}C$. However, a-C:H film above $200^{\circ}C$ exhibited significant decrease of PL accompanying dehydrogenation. This led to a red shift of the PL peak.

• Bulletin of the Korean Chemical Society
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• 제24권7호
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• pp.953-956
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• 2003

Hexagonal GaN (h-GaN) films have been grown on Si(111) substrates by metal organic chemical vapor deposition using the azidodiethylgallium methylamine adduct, Et₂Ga(N₃)·NH₂Me, as a new single precursor. Deposition was carried out in the substrate temperature range 385-650 °C. The GaN films obtained were stoichiometric and did not contain any appreciable amounts of carbon impurities. It was also found that the GaN films deposited on Si(111) had the [0001] preferred orientation. The photoluminescence spectrum of a GaN film showed a band edge emission peak characteristic of h-GaN at 378 nm.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 D
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• pp.1821-1823
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• 1999

Carbon is an attractive material on electro double capacitor which depend on charge storage in the electrode/electrolyte interfacial double layer. Carbonaceous material for double layer capacitor can be obtained from carbon powder, fiber, film and porous carbon sheet. The capacitance of electrodes using an activated carbon was influenced by a filling density of the carbon, thickness and internal resistance of the electrode. In this study. to reduce internal resistance and increase electric conductivity of the electrode. activated carbon/carbon(AC/C) composite electrode was fabricated. The capacitors which have energy densities of 68F/g(at $30^{\circ}C$), 109F/g(at $60^{\circ}C$) and $68F/cm^3$(at $30^{\circ}C$), $111F/cm^3$(at $60^{\circ}C$) were fabricated by using AC/C composite electrodes.

• 센서학회지
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• 제20권5호
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• pp.311-316
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• 2011

Monitoring the carbon dioxide concentration in arterial blood is vital for the evaluation and prevention of pulmonary disease. Yet, domestic pure arterial blood carbon dioxide sensor technologies are not being developed, instead all sensors are imported. In this paper, we develop a real time monitoring system for arterial blood partial pressure of carbon dioxide($pCO_2$) gas from the wrist by using a carbon micro-heater. The micro-heater was fabricated with a thickness of 0.3 ${\mu}m$ in order to collect the carbon dioxide under the skin. The micro-heater has been designed to perform temperature compensation in order to prevent damage to the skin. Two clinical trials of the system were undertaken. As a result, we demonstrated that a portable, transcutaneous carbon dioxide analysis($TcpCO_2$) device produced domestically is possible. In addition, this system reduced the analysis time significantly. Carbon films could reduce the unit price of these sensors by replacing the gold film used in foreign models. Also, we developed a real time monitoring system which can be used with optical biosensors for medical diagnostics as well as gas sensors for environmental monitoring.

• 한국정밀공학회지
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• 제24권6호
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• pp.113-120
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• 2007

Chemical vapor deposition (CVD) is one of the various synthesis methods that have been employed for carbon nanotube (CNT) growth. In particular, Ren et al reported that large areas of vertically aligned multi-wall carbon nanotubes could be grown using a direct current (dc) PECVD system. The synthesis of CNT requires a metal catalyst layer, etchant gas, and a carbon source. In this work, the substrates consists of Si wafers with Ni-deposited film. Ammonia $NH_3$) and acetylene ($C_2H_2$) were used as the etchant gases and carbon source, respectively. Pretreated conditions had an influence on vertical growth and density of CNTs. And patterned growth of CNTs could be achieved by lithographical defining the Ni catalyst prior to growth. The length of single CNT was increased as niclel dot size increased, but the growth rate was reduced when nickel dot size was more than 200 nm due to the synthesis of several CNTs on single Ni dot. The morphology of the carbon nanotubes by TEM showed that vertical CNTs were multi-wall and tip-type growth mode structure in which a Ni cap was at the end of the CNT.

• 열처리공학회지
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• 제35권2호
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• pp.51-56
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• 2022

In this study, we controlled the shape of a carbon layer on gallium oxide templates. Gallium oxide layers were deposited on sapphire substrates using mist chemical vapor deposition. Subsequently, carbon layers were formed using radio frequency plasma chemical vapor deposition. Various shapes of carbon structures appeared according to the fraction of methane gas, used as a precursor. As methane gas concentration was adjusted from 1 to 100%, The shapes of carbon structures varied to diamonds, nanowalls, and spheres. The growth of carbon isotope structures on Ga₂O₃ templates will give rise to improving the electrical and thermal properties in the next-generation electronic applications.