• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.08a
• /
• pp.181-181
• /
• 2012

Direct synthesis of graphene using a chemical vapor deposition (CVD) has been considered a facile way to produce large-area and uniform graphene film, which is an accessible method from an application standpoint. Hence, their fundamental understanding is highly required. Unfortunately, the CVD growth mechanism of graphene on Cu remains elusive and controversial. Here, we present the evidences for two different growth modes of graphene on Cu investigated by varying carbon feedstock (C2H2 and CH4) and working pressure. The number of uniform graphene layer grown by C2H2 increased with increasing its injection time. A combined secondary ion mass spectrometry (SIMS) and X-ray diffraction (XRD) study revealed a carbon-diffused Cu layer created below surface region of Cu substrate with the expansion of Cu lattice. The graphene on Cu was grown by the diffusion and precipitation mode not by the surface adsorption mode, because similar results were observed in graphene/Ni system. The carbon-diffused Cu layer was also observed after graphene growth under high CH4 pressure. Based on various previous results and ours, we have successfully found that there are two selective growth modes for graphene on Cu substrate, and a desired mode can be chosen by tuning working pressure corresponding to the kind of carbon feedstock. We believe that this finding will shed light on high quality graphene growth and its multifaceted applications.

• Journal of Welding and Joining
• /
• v.7 no.4
• /
• pp.30-37
• /
• 1989

Effect of heat treatment on mechanical properties of an overlay weldment was investigated. Over welding was carried out on the structural C-Mn mild steel substrate to take required test specimens. Shielded metal arc welding process with 13Cr-0.2Ni stick electrode was applied. The heat treatment temperatures and holding times were $450{\circ}C., 550{\circ}C., 650{\circ}C., 750{\circ}C., 850{\circ}C.$ and 0.5hr, 2hr, 10hr, respectively. Mechanical tests and microscopic inspection were also carried out to investigate welds soundness. Test results indicated that carbon migration was dominant near bonded zone. At temperature of around 650.deg. C, carburized layer and decarburized layer were formed remarkably along overlay welds region and C-Mn mild steel region, respectively. The wideth of these layers became wider with increasing heat treatment temperature and/or holding time at the elevated temperature, and this relationship agreed with Larson-Miller parameter. Side bending test results demonstrated that the crack free region of overlay welds could be deduced from the relationship between temperature and holding time.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2015.08a
• /
• pp.109.2-109.2
• /
• 2015

Graphene, as a single layer of $sp^2$-bonded carbon atoms packed into a 2D honeycomb crystal lattice, has attracted much attention due to its outstanding properties such as high carrier mobility, chemical stability, and optical transparency. In order to synthesize high quality graphene, transition metals, such as nickel and copper, have been widely employed as catalysts, which need transfer to desired substrates for various applications. However, the transfer steps inevitably induce defects, impurities, wrinkles, and cracks of graphene. Here, we report a facile transfer-free graphene synthesis method through nickel and carbon co-deposited layer, which does not require separately deposited catalytic nickel and carbon source layers. The 100 nm NiC layer was deposited on the top of $SiO_2/Si$ substrates by nickel and carbon co-deposition. When the sample was annealed at $1000^{\circ}C$, the carbon atoms diffused through the NiC layer and deposited on both sides of the layer to form graphene upon cooling. The remained NiC layer was removed by using nickel etchant, and graphene was then directly obtained on $SiO_2/Si$ without any transfer process. Raman spectroscopy was carried out to confirm the quality of resulted graphene layer. Raman spectra revealed that the resulted graphene was at high quality with low degree of $sp^3$-type structural defects. Furthermore, the Raman analysis results also demonstrated that gas flow ratio (Ar : $CH_4$) during the NiC deposition and annealing temperature significantly influence not only the number of graphene layers but also structural defects. This facile non-transfer process would consequently facilitate the future graphene research and industrial applications.

• Korean Journal of Metals and Materials
• /
• v.49 no.4
• /
• pp.321-328
• /
• 2011

The 30 nm-thick Ni layers was deposited on a flexible polyimide substrate with an e-beam evaporation. Subsequently, we deposited a Si layer using a catalytic CVD (Cat-CVD) in a hydride amorphous silicon (${\alpha}$-Si:H) process of $T_{s}=180^{\circ}C$ with varying thicknesses of 55, 75, 145, and 220 nm. The sheet resistance, phase, degree of the crystallization, microstructure, composition, and surface roughness were measured by a four-point probe, HRXRD, micro-Raman spectroscopy, FE-SEM, TEM, AES, and SPM. We confirmed that our newly proposed Cat-CVD process simultaneously formed both NiSi and crystallized Si without additional annealing. The NiSi showed low sheet resistance of < $13{\Omega}$□, while carbon (C) diffused from the substrate led the resistance fluctuation with silicon deposition thickness. HRXRD and micro-Raman analysis also supported the existence of NiSi and crystallized (>66%) Si layers. TEM analysis showed uniform NiSi and silicon layers, and the thickness of the NiSi increased as Si deposition time increased. Based on the AES depth profiling, we confirmed that the carbon from the polyimide substrate diffused into the NiSi and Si layers during the Cat-CVD, which caused a pile-up of C at the interface. This carbon diffusion might lessen NiSi formation and increase the resistance of the NiSi.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.129-129
• /
• 2016

Graphene, as a single layer of $sp^2$-bonded carbon atoms packed into a 2D honeycomb crystal lattice, has attracted much attention due to its outstanding properties. In order to synthesize high quality graphene, transition metals, such as nickel and copper, have been widely employed as catalysts, which needs transfer to desired substrates for various applications. However, the transfer steps are not only complicated but also inevitably induce defects, impurities, wrinkles, and cracks of graphene. Furthermore, the direct synthesis of graphene on dielectric surfaces has still been a premature field for practical applications. Therefore, cost effective and concise methods for transfer-free graphene are essentially required for commercialization. Here, we report a facile transfer-free graphene synthesis method through nickel and carbon co-deposited layer. In order to fabricate 100 nm thick NiC layer on the top of $SiO_2/Si$ substrates, DC reactive magnetron sputtering was performed at a gas pressure of 2 mTorr with various Ar : $CH_4$ gas flow ratio and the 200 W DC input power was applied to a Ni target at room temperature. Then, the sample was annealed under 200 sccm Ar flow and pressure of 1 Torr at $1000^{\circ}C$ for 4 min employing a rapid thermal annealing (RTA) equipment. During the RTA process, the carbon atoms diffused through the NiC layer and deposited on both sides of the NiC layer to form graphene upon cooling. The remained NiC layer was removed by using a 0.5 M $FeCl_3$ aqueous solution, and graphene was then directly obtained on $SiO_2/Si$ without any transfer process. In order to confirm the quality of resulted graphene layer, Raman spectroscopy was implemented. Raman mapping revealed that the resulted graphene was at high quality with low degree of $sp^3$-type structural defects. Additionally, sheet resistance and transmittance of the produced graphene were analyzed by a four-point probe method and UV-vis spectroscopy, respectively. This facile non-transfer process would consequently facilitate the future graphene research and industrial applications.

• Proceedings of the Korean Powder Metallurgy Institute Conference
• /
• 2006.09b
• /
• pp.1130-1131
• /
• 2006

We found that the """interface reaction between Ni-based alloy bond, diamond, and steel core is very critical in bond strength of diamond tool. None element from metal bond diffuses into the steel core but the Fe element of steel core was easily diffused into the bond. This diffusion depth of Fe has a great effect on the bonding strength. The Cr in steel core accelerated the Fe diffusion and improved the bond strength, on the other hand, carbon decreased the strength. Ni-based alloy bond including Cr was chemically bonded with diamond by forming Cr carbide. However, the Cr and Fe in STS304 were largely interdiffused, the strength was very low. The Cr passivity layer formed at surface of STS304 made worse strength at commissure in brazing process.

• Journal of the Korean institute of surface engineering
• /
• v.36 no.6
• /
• pp.430-436
• /
• 2003

The nanoocrystalline Ni-l5W(at.%) coating electrodeposited on the high carbon steel was oxidized at 700 and $800^{\circ}C$ in air, and the resultant oxidation properties were investigated using XRD, EPMA, TGA and TEM. The oxidation resistance of the coating was not so good that most of the coating was oxidized after oxidation at $800^{\circ}C$ for 5 hrs. The oxidation led to the formation of the outer, thin NiO oxide scale and the inner, porous, rather thick ($NiWO_4$＋NiO) mixed layer containing a bit of $WO_2$. During oxidation, substrate elements such as Fe and Cr diffused outwardly toward the coating, according to the concentration gradient.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.380.2-380.2
• /
• 2014

Direct synthesis of graphene using a chemical vapor deposition (CVD) has been considered a facile way to produce large-area and uniform graphene film, which is an accessible method from an application standpoint. Hence, their fundamental understanding is highly required. Unfortunately, the CVD growth mechanism of graphene on Cu remains elusive and controversial. Here, we present the effect of graphene growth parameters on the number of graphene layers were systematically studied and growth mechanism on copper substrate was proposed. Parameters that could affect the thickness of graphene growth include the pressure in the system, gas flow rate, growth pressure, growth temperature, and cooling rate. We hypothesis that the partial pressure of both the carbon sources and hydrogen gas in the growth process, which is set by the total pressure and the mole fraction of the feedstock, could be the factor that controls the thickness of the graphene. The graphene on Cu was grown by the diffusion and precipitation mode not by the surface adsorption mode, because similar results were observed in graphene/Ni system. The carbon-diffused Cu layer was also observed after graphene growth under high CH4 pressure. Our findings may facilitate both the large-area synthesis of well-controlled graphene features and wide range of applications of graphene.

• Applied Chemistry for Engineering
• /
• v.24 no.5
• /
• pp.489-493
• /
• 2013

The most common carbonaceous anode materials of lithium ion batteries (natural graphite, artificial graphite, hard carbon, and mesocarbon microbeads) were utilized as an electrode in lithium ion capacitors. It could be able to enhance the energy density of capacitors due to the intercalation of lithium ion. In this work, the properties of capacitors using the symmetric electrode were measured by organizing coin cell typed capacitors. Also, we made other capacitors having pre-intercalated lithium ions at one side of the electrode. The results of electrochemical measurements for these capacitors show that the storage capacitance was appeared. In other words, if the migration of lithium ions is supplied continuously in the electrolytes, lithium ions can be diffused into the carbonaceous materials. And it results in the improvement of capacitance compared to only using symmetric carbonaceous electrodes. Also, we conducted the same measurement with graphene oxide having a the large specific area in the same condition. Herein, we recognized that the large specific area is extremely important for supercapacitors.

• Applied Microscopy
• /
• v.34 no.1
• /
• pp.23-29
• /
• 2004

In this study, we introduce the structural analysis of amorphous silica nanoparticles by EF-TEM electron diffraction and in-situ heating experiments. Three diffused rings were observed on the electron diffraction patterns of initial silica nanoparticles, while crystalline spot patterns were gradually appeared during the insitu heating process at $900^{\circ}C$. These patterns indicate the basic unit of $SiO_4$ tetrahedra consisting amorphous silica and gradual crystallization into the ideal layer structure of tridymite by heating. Under high vacuum condition in TEM, SiO nanoparticles were redeposited on the carbon grid after evaporation of SiO gas from $SiO_2$ above $850^{\circ}C$ and the remaining $SiO_2$ were crystallized into orthorhombic tridymite, consistent with ex-situ heating results in furnace at $900^{\circ}C$.