• Korean Journal of Materials Research
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• v.9 no.8
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• pp.825-830
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• 1999

Characteristics of SiOF films deposited by a FTES/$O_2$-plasma enhanced chemical vapor deposition method have been investigated using Fourier transform infrared spectroscopy, X-ray photoelectro spectroscopy, and ellipsometry. Electrical properties such as dielectric constant, dielectric breakdown and leakage current density are investigated using C-V and I-V measurements with MIS(Au/SiOF/p-Si) capacitor structure. Stepcoverage of the films have been also characterized using scanning electron microscopy and ellipsometry. A high quality SiOF film was formed on that the flow rates of FTES and $O_2$were 300sccm, respectively. The dielectric constant of the deposited SiOF film was about 3.1. This value is lower than that of the oxide films obtained using other method. The dielectric breakdown field and leakage current are more than 10MV/cm and about $8[\times}10^{9}A/\textrm{cm}^2$, respectively. The deposited SiOF film with thickness as $2500{\AA}$ on the $0.3{\mu}{\textrm}{m}$ metal pattern shows a high step-coverage without a void.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.31 no.10A
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• pp.1031-1036
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• 2006

This paper proposes a novel BPF structure with less insertion loss and small size instead of the existing coupled line BPF for the output of the tripler using APDP (Anti-Parallel Diode Pair). This proposed BPF consists of the interdigital capacitor and spiral open stub. The proposed BPF has the insertion loss of less than 0.7dB within the band $(16.41{\sim}19.23GHz)$. The conversion loss of the tripler is about $16.6{\sim}18.5dB$ $(flatness<{\pm}1dB)$ at $5.72{\sim}6.28GHz$ of fundamental frequency. Its fundamental frequency and the fifth harmonic suppression characteristic at 6GHz are -32.16dBc and -44.6dBc, respectively And its phase noise attenuation characteristic is about 9.5dB at 100kHz.

• Korean Journal of Materials Research
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• v.13 no.2
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• pp.69-73
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• 2003

In this work, $IrO_2$thin films as bottom electrode of ferroelectric capacitors were deposited and characterized. The $IrO_2$films deposited in the conditions of 25, 40 and 50% oxygen ambient by sputtering method were annealed at 600, 700 and $800^{\circ}C$, respectively. It was found that the crystallinity and the surface morphology of $IrO_2$films affected the surface properties and electrical properties of SBT thin films prepared by the MOD method. With increasing temperature, the crystallinity and the roughness of $IrO_2$films were also increasing. This increasing of roughness degraded the surface properties and electrical properties of SBT films. We found an optimum condition of $IrO_2$films as bottom electrode for ferroelectric capacitor at 50% oxygen ambient and $600^{\circ}C$ annealing temperature. Electrical characterizations were performed by using$ IrO_2$bottom electrodes grown at an optimum conditions. The remanent polarization ($P_{r}$) of the Pt/SBT/$IrO_2$/$SiO_2$/Si structure was 2.75 $\mu$C/$\textrm{cm}^2$ at an applied voltage of 3 V. The leakage current density was $1.06${\times}$10^{-3}$ A/$\textrm{cm}^2$ at an applied voltage of 3 V.

• Journal of Sensor Science and Technology
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• v.15 no.1
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• pp.34-39
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• 2006

This study provides the electrical model of combustible catalytic gas sensor. Physical characteristics such as thermal behavior, resistance change were included in this model. The finite element method analysis for sensor device structure showed that the thermal behavior of sensor is expressed in a simple electrical equivalent circuit that consists of a resistor, a capacitor and a current source. This thermal equivalent circuit interfaces with real electrical circuit using two parts. One is 'power to heat' converter. The other is temperature dependent variable resistor. These parts realized with the analog behavior devices of the SPICE library. The gas response tendency was represented from the mass transferring limitation theory and the combustion theory. In this model, Gas concentration that is expressed in voltage at the model, is converted to heat and is flowed to the thermal equivalent circuit. This model is tested in several circuit simulations. The resistance change of device, the delay time due to thermal capacity, the gas responses output voltage that are calculated from SPICE simulations correspond well to real results from measuring in electrical circuits. Also good simulation result can be produced in the more complicated circuit that includes amplifier, bios circiut, buffer part.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.54 no.10
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• pp.438-442
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• 2005

Si nanocrystal (Si NC) memory device has several advantages such as better retention, lower operating voltage, reduced punch-through and consequently a smaller cell area, suppressed leakage current. However, the physical and electrical reasons for this behavior are not completely understood but could be related to interface states of Si NCs. In order to find out this effect, we characterized electrical properties of Si NCs embedded in a SiO$_{2}$ layer by scanning probe microscopy (SPM). The Si NCs were generated by the laser ablation method with compressed Si powder and followed by a sharpening oxidation. In this step Si NCs are capped with a thin oxide layer with the thickness of 1$\~$2 nm for isolation and the size control. The size of 51 NCs is in the range of 10$\~$50 m and the density around 10$^{11}$/cm$^{2}$ It also affects the interface states of Si NCs, resulting in the change of electrical properties. Using a conducting tip, the charge was injected directly into each Si NC, and the image contrast change and dC/dV curve shift due to the trapped charges were monitored. The results were compared with C-V characteristics of the conventional MOS capacitor structure.

• Korean Journal of Materials Research
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• v.23 no.11
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• pp.643-648
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• 2013

Activated carbon (AC) was synthesized from rice husks using the chemical activation method with KOH, NaOH, a combination of (NaOH + $Na_2CO_3$), and a combination of (KOH + $K_2CO_3$) as the chemical activating reagents. The activated carbon with the highest surface area (around $2000m^2/g$) and high porosity, which allows the absorption of a large number of ions, was applied as electrode material in electric double layer capacitors (EDLCs). The AC for EDLC electrodes is required to have a high surface area and an optimal pore size distribution; these are important to attain high specific capacitance of the EDLC electrodes. The electrodes were fabricated by compounding the rice husk activated carbons with super-P and mixed with polyvinylidene difluoride (PVDF) at a weight ratio of 83:10:7. AC electrodes and nickel foams were assembled with potassium hydroxide (KOH) solution as the electrolyte. Electrochemical measurements were carried out with a three electrode cell using 6 M KOH as electrolyte and Hg/HgO as the reference electrode. The specific capacitance strongly depends on the pore structure; the highest specific capacitance was 179 F/g, obtained for the AC with the highest specific surface area. Additionally, different activation times, levels of heating, and chemical reagents were used to compare and determine the optimal parameters for obtaining high surface area of the activated carbon.

• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.14 no.6
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• pp.117-124
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• 2015

In this paper, a new kind of wideband, low-loss composite right/left-handed (CRLH) transmission line (TL) and a Wilkinson power divider are presented. The TL is composed of a parallel meander inductor and a series cutting capacitor based on coplanar waveguide (CPW) structure. The power divider is designed by substituting the CRLH-TL into the conventional transmission line. The experiment results show that the TL has a good agreement with the desired results, exhibiting the return losses under 12 dB from 8.4 GHz to 34.4 GHz. The operating frequencies of the power divider are 12.05 GHz to 13.15 GHz and 16.50 GHz to 19.30 GHz, respectively. The 20 dB bandwidths are 8.9 % and 17.9 %, respectively. Typical experimental measurements are conducted and compared with the simulated results.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.1
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• pp.28-36
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• 2008

This paper discusses theimplementation of the low-voltage, low-power, third-order, 1-bit switched capacitor delta-sigma modulator of the implantable cardiac pacemaker. The distributed, feed-forward structure and bulk-driven OTA were used in order to achieve an efficient operation under a supply voltage of 1V or lower. The designed modulator has a dynamic range of 49dB at 0.9V supply voltage and consumes 816nW of power. Such a significant reduction in power consumption allows diverse applications, not only in pacemakers, but also in implantable biomedical devices that operate with limited battery power. The core chip size of the modulator is $1000{\mu}m*500{\mu}m$ manufactured, with the $0.18{\mu}m$ CMOS standard process.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.26 no.12
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• pp.1044-1049
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• 2015

In this paper, isolation enhanced antenna using isolating resonator was proposed. Two loop type antennas were designed to operate at Wi-Fi band(2.4~2.5 GHz), in symmetry to the center, and are closely located to each other. In order to enhance isolation characteristics at Wi-Fi bands, isolating resonator was designed between the two loop type antennas. The proposed isolating resonator is a slot type antenna that enhances isolation with the control of the size, and by adjusting the value of capacitor($C_D$) the resonant frequency of the isolating resonator can easily be adjusted to enhance isolation characteristic at the target frequency.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.12
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• pp.1447-1453
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• 2010

In this paper, the design and the fabrication of dual-band bandpass filter using two dual-mode resonators is presented. Dual-mode resonator using a short stub is miniaturized by inter-digital capacitor and stepped impedance. Two dual mode resonators are designed to have different resonant frequencies, one for the lower passband and the other for the upper passband. Transmission zero is positioned at low or high rejection bands with a sharp skirt characteristic. Dual-band operation can be achieved using dual feeding structure. For WLAN, the proposed filter at 2.45/5.25 GHz is designed and fabricated. The size of the filter is as compact as 1$10.83\;mm{\times}5.3\;mm$.