• Journal of IKEEE
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• v.23 no.1
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• pp.35-43
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• 2019

A capacitor self-calibration is proposed to improve the linearity of the capacitor digital-to-analog converter (CDAC) for an asynchronous successive approximation register (SAR) analog-to-digital converter (ADC) with 10-bit resolution. The proposed capacitor self-calibration is performed so that the value of each capacitor of the upper 5 bits of the 10-bit CDAC is equal to the sum of the values of the lower capacitors. According to the behavioral simulation results, the proposed capacitor self-calibration improves the performances of differential nonlinearity (DNL) and integral nonlinearity (INL) from -0.810/+0.194 LSBs and -0.832/+0.832 LSBs to -0.235/+0.178 LSBs and -0.227/+0.227 LSBs, respectively, when the maximum capacitor mismatch of the CDAC is 4%. The proposed 10-bit 20-MS/s asynchronous SAR ADC is implemented using a 110-nm CMOS process with supply of 1.2 V. The area and power consumption of the proposed asynchronous SAR ADC are $0.205mm^2$ and 1.25 mW, respectively. The proposed asynchronous SAR ADC with the capacitor calibration has a effective number of bits (ENOBs) of 9.194 bits at a sampling rate of 20 MS/s about a $2.4-V_{PP}$ differential analog input with a frequency of 96.13 kHz.

• JSTS:Journal of Semiconductor Technology and Science
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• v.1 no.1
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• pp.20-30
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• 2001

A 1.8V $650{\;}\textrm{mm}^2$ 4Gb DRAM having $0.10{\;}\mu\textrm{m}^2$ cell size has been successfully developed using 0.11 $\mu\textrm{m}$DRAM technology. Considering manufactur-ability, we have focused on developing patterning technology using KrF lithography that makes $0.11{\;}\mu\textrm{m}$ DRAM technology possible. Furthermore, we developed novel DRAM technologies, which will have strong influence on the future DRAM integration. These are novel oxide gap-filling, W-bit line with stud contact for borderless metal contact, line-type storage node self-aligned contact (SAC), mechanically stable metal-insulator-silicon (MIS) capacitor and CVD Al process for metal inter-connections. In addition, 80 nm array transistor and sub-80 nm memory cell contact are also developed for high functional yield as well as chip performance. Many issues which large sized chip often faces are solved by novel design approaches such as skew minimizing technique, gain control pre-sensing scheme and bit line calibration scheme.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.9
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• pp.13-21
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• 2011

In this paper, the CMOS programmable interface circuit for MEMS gyroscope is presented, and evaluated with the MEMS sensing element. The circuit includes the front-end charge amplifier with 10 bit programmable capacitor arrays, 9 bit DAC for accurate offset calibration, and 10 bit PGA for accurate gain calibration. The self oscillation loop with automatic gain control operates properly. The offset error and gain error after calibration are measured to be 0.36 %FSO and 0.19 %FSO, respectively. The noise equivalent resolution and bias instability are measured to be 0.016 deg/sec and 0.012 deg/sec, respectively. The calibration capability of this circuit can reduce the variations of the output offset and gain, and this can enhance the manufacturability and can improve the yield.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.40 no.1
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• pp.19-29
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• 2003

This paper proposes a CMOS readout circuit for uncooled micro-bolometer arrays adopting a four-point step calibration technique. The proposed readout circuit employing an 11b analog-to-digital converter (ADC), a 7b digital-to-analog converter (DAC), and an automatic gain control circuit (AGC) extracts minute infrared (IR) signals from the large output signals of uncooled micro-bolometer arrays including DC bias currents, inter-pixel process variations, and self-heating effects. Die area and Power consumption of the ADC are minimized with merged-capacitor switching (MCS) technique adopted. The current mirror with high linearity is proposed at the output stage of the DAC to calibrate inter-pixel process variations and self-heating effects. The prototype is fabricated on a double-poly double-metal 1.2 um CMOS process and the measured power consumption is 110 ㎽ from a 4.5 V supply. The measured differential nonlinearity (DNL) and integrat nonlinearity (INL) of the 11b ADC show $\pm$0.9 LSB and $\pm$1.8 LSB, while the DNL and INL of the 7b DAC show $\pm$0.1 LSB and $\pm$0.1 LSB.