• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.353-354
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• 2006

This work describes the effect of binders, such as carboxymethylcellulose (CMC), CMC+Polytetrafluoroethylene (PTFE) and PTFE, on the electrochemical and mechanical properties of activated carbon-electrode for electric double layer capacitor. The cell capacitors using the electrode bound with binary binder composed of CMC and PTFE, especially m composition CMC ; PTFE = 60 : 40 wt %, has exhibited the better rate capability and the lower internal resistance than those of the cell capacitor with CMC. On the other hand, the sheet type electrode kneaded with PTFE was bonded with conductive adhesive on Al foil. This cell capacitor using the electrode with PTFE exhibited the best mechanical properties and rate capability compared to the CMC and CMC+PTFE one These behaviors could be explained by the well-developed network structure of PTFE fibrils during the kneading process.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.326-329
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• 2002

In this paper, we investigated a feasibility of cerium oxide(CeO$_2$) films as a buffer layer of MFIS(metal ferroelectric insulator semiconductor) type capacitor. CeO$_2$ layer were Prepared by two step process of a low temperature film growth and subsequent RTA (rapid thermal annealing) treatment. By app1ying an ultra thin Ce metal seed layer and N$_2$ Plasma treatment, dielectric and interface properties were improved. It means that unwanted SiO$_2$ layer generation was successfully suppressed at the interface between He buffer layer and Si substrate. The lowest lattice mismatch of CeO$_2$ film was as low as 1.76% and average surface roughness was less than 0.7 m. The Al/CeO$_2$/Si structure shows breakdown electric field of 1.2 MV/cm, dielectric constant of more than 15.1 and interface state densities as low as 1.84${\times}$10$\^$11/ cm$\^$-1/eV$\^$-1/. After N$_2$ plasma treatment, the leakage current was reduced with about 2-order.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.22-25
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• 2002

In this paper, we deposited MgO buffer layer on p-type (100)Si substrate in the condition of substrate temperature 400$^{\circ}C$, working gas ratio Ar:O$_2$=80:20, RF Power 50W, working pressure 10mtorr, and the thickness of the film was about 300${\AA}$. Then we deposited Ba$\sub$0.5/Sr$\sub$0.5/TiO$_3$ thin film using RF Magnetron sputtering method on the MgO/Si substrate in various RF power of 25W, 50W, 75W. The film deposited in 50W showed the best crystalline from the XRD measurement. To know the electrical properties of the film, we manufactured Al/BSTMgO(300${\AA}$)/Si/Al structure capacitor. In the result of I-V measurement, The leakage current density of the capacitor was lower than 10$\^$-7/A/$\textrm{cm}^2$ at the range of ${\pm}$150kV/cm. From C-V characteristics of the capacitor, can calculate the dielectric constant and it was 305. Finally we deposited BST thin film on bare Si substrate and (100)MgO substrate in the same deposition condition. From the comparate of the properties of these samples, we found the properties of BST thin film which deposited on MgO/Si substrate were better than on bare Si substrate and similar to on MgO substrate.

• 한국신뢰성학회지:신뢰성응용연구
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• 제17권1호
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• pp.66-71
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• 2017

Purpose: Polymer capacitors are known to have very high reliability as compared with liquid electrolytic capacitors, but their capacity has been reported to decrease in charge and discharge at low temperature. The purpose of this study to clarify these characteristics. Methods: In order to clarify these characteristics, charging-discharging tests were carried out for 200 hours with three different capacities and at 5 different temperature from $5^{\circ}C$ to $100^{\circ}C$. Results: As a result of the test, it was confirmed that the capacity of the polymer capacitor was decreased with higher capacity and lower temperature. Conclusion: Such a failure phenomenon was caused by the shrinkage and expansion characteristics of the polymer used therein, it is presumed that this failure phenomenon is due to the complex pore structure made by etching.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2008년도 추계종합학술대회 B
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• pp.299-302
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• 2008

본 논문에서는 결함 기저면 구조(DGS)를 이용하여 WLAN 차단 필터 포함하는 소형의 초광대역 대역통과 필터를 제안하였다. H-모형의 슬롯은 IDC(Inter-Digital Capacitor)의 커플링을 이용하여 대역통과 필터의 성능을 향상시키기 위하여 채택하였고, 끝이 점점 작아지는 결함 접지 구조 3쌍은 대역 신호를 제외한 전송이 0이 되기 위하여 형성된 것이다. 또한 구부러진 슬롯은 원하지 않는 WLAN 무선 신호들을 걸러내도록 개발하였다. 이러한 세 구조들의 조합으로 소형의 UWB 대역통과 필터를 얻을 수 있었다.

• Applied Science and Convergence Technology
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• 제24권2호
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• pp.33-40
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• 2015

$ZrO_2$ and Al-Zr composite oxide film was prepared by vacuum assisted sol-gel dip coating method and anodizing. $ZrO_2$ films annealed above $400^{\circ}C$ have tetragonal structure. $ZrO_2$ layers inside etch pits were successfully coated from the $ZrO_2$ sol. The double layer structures of samples were obtained after being anodized at 100 V to 600 V. From the TEM images, it was found that the outer layer was $Al_2O_3$, the inner layer was multi-layer of $ZrO_2$, Al-Zr composite oxide and Al hydrate. The capacitance of $ZrO_2$ coated foil exhibited about 28.3% higher than that of non-coating foil after being anodized at 100 V. The high capacitance of $ZrO_2$ coated foils anodized at 100 V can be attributed to the relatively high percentage of inner layer in total thickness. The electrical properties, such as withstanding voltage and leakage current of coated and non-coated Al foils showed similar values. From the results, $ZrO_2$ and Al-Zr composite oxide is promising to be used as the partial dielectric of high voltage capacitor to increase the capacitance.

• Journal of Electrical Engineering and Technology
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• 제7권2호
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• pp.207-211
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• 2012

Spinel-$Li_4Ti_5O_{12}$ was successfully synthesized by a solid-phase method at 800, 850, and $900^{\circ}C$ according to the $Li_4Ti_5O_{12}$ cubic spinel phase structure. To achieve higher EDLC energy density with the $Li_4Ti_5O_{12}$, the negative electrode of the hybrid supercapacitor was studied in this work. The electrochemical performances of the hybrid supercapacitor and EDLC were characterized by constant current discharge curves, c-rate, and cycle performance testing. The capacitance (1st cycle) of the hybrid supercapacitor and EDLC was 209 and 109 F, respectively, which is higher than EDLC. The capacitance of the hybrid supercapacitor decreases from 209 F to 101 F after 20 cycles when discharged at several specific current densities ranging from 1 to 10 A. In contrast, capacitance of the EDLC hardly decreases after 20 cycles. Results show that hybrid supercapacitor benefits from the high rate capability of supercapacitor and high capacity of the battery. Findings also prove that the hybrid supercapacitor is an energy storage device where the supercapacitor and the Li ion secondary battery coexist in one cell system.

• 전력전자학회논문지
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• 제22권3호
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• pp.185-192
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• 2017

This paper proposes a single-stage interleaved soft-switching electrolytic capacitor-less EV charger with reduced component count and simple circuit structure. The proposed charger achieves ZVS turn-on of all switches and ZCS turn-off of all diodes without regard to voltage and load variation. It achieves high power density even without an input filter due to CCM operation and bulky electrolytic capacitors and without a low-frequency component in the transformer. A 2 kW prototype of the proposed charger with sinusoidal charging is built and tested to verify the validity of the proposed operation.

• 한국정보통신학회논문지
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• 제12권11호
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• pp.1909-1913
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• 2008

본 논문에서는 결함 기저면 구조(DGS)를 이용하여 WLAN 차단 필터 포함하는 소형의 초광대역 대역통과 필터를 제안 하였다. H-모형의 슬롯은 IDC(Inter-Digital Capacitor)의 커플링을 이용하여 대역통과 필터의 성능을 향상시키기 위하여 채택 하였고, 끝이 점점 작아지는 결함 접지 구조 3쌍은 대역신호를 제외한 전송이 0이 되기 위하여 형성된 것이다. 또한 구부러진 슬롯은 원하지 않는 WLAN 무선 신호들을 걸러내도록 개발하였다. 이러한 세 구조들의 조합으로 소형의 UWB 대역통과 필터를 얻을 수 있었다.

• 한국항행학회논문지
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• 제24권6호
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• pp.627-632
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• 2020

본 논문에서는 폴리비닐알코올로 코팅된 마이크로스트립 결함 접지 구조 기반 마이크로파 센서를 이용한 습도 센서의 개발에 대하여 연구하였다. 인터디지털 커패시터 모양의 결함 접지 구조를 마이크로스트립 선로의 접지면에 추가하여 피시험물의 유전율 변화에 민감한 고감도 마이크로파 센서를 설계하였다. 습도에 따라 유전율이 변하는 고분자 물질인 폴리비닐알코올을 제안된 센서의 결함 접지 구조에 얇은 두께로 코팅하였고, 습도에 따른 마이크로파 센서의 전달계수의 공진 주파수와 크기의 변화를 측정하였다. 온습도 챔버를 사용하여 25도에서 상대습도를 40%에서 80%까지 10% 간격으로 증가시켰을 때 전달계수의 공진 주파수는 1.475 GHz에서 1.449 GHz로 감소하였고, 크기는 -32.90 dB에서 -25.67 dB로 증가하였다.