• The Journal of Korean Institute of Communications and Information Sciences
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• v.7 no.1
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• pp.10-17
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• 1982

Recently, there has been a great interest in the realization of analog fiters using switched and fixed capacitors and active elements. It is known that a switched capacitor has an performance much better that a resistor in the characteristics of temperature and linearity, and can be fabricated on the much smaller area than the resistor. In this paper all the resistors in the gyrator filter network are relpaced by the switched capacitors for an SC-Gyrator filter circuit can be fully integrated into a single chip by using MOS technology. By experiments we show that the response of designed SC-Gyrator filter is much similar to that of its protorype gyrator filter.

• Journal of the Semiconductor & Display Technology
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• v.9 no.3
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• pp.75-78
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• 2010

In this study we investigated the electrical properties of ZnO-based MOS capacitor with $HfO_2$ as the gate dielectric. MIM capacitor, which uses either $HfO_2$ or $Al_2O_3$ as the dielectric layer, is also studied to understand the dependency of the dielectrics on the preparation conditions. It was found that thinner $HfO_2$ films yield better electrical properties, namely lower leakage current and higher breakdown electric field. These properties were observed to deteriorate when subsequently annealed. Capacitance in the depletion region of MOS capacitor was found to increase with UV ozone treatment time up to 60min. However, when the treatment time was extended to 120min, the trend is reversed. The 'threshold voltage' was also observed to positively shift with UV ozone treatment time up to 60min. The shift apparently saturated for longer treatment.

• Proceedings of the KIEE Conference
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• 1990.11a
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• pp.85-87
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• 1990

Silicon nitride film was deposited on a silicon wafer using a laser CVD(LCVD) technique, which is based on direct photolysis of $SiH_4/NH_3$ gas mixture by ArF laser beam(${\lambda}=193\;nm$). The refractive index of deposited SiN film is 1.9 at the temperature of $300^{\circ}C$, pressure of 5 torr. The breakdown field strength of LCVD SiN film was 10MV/cm. In IR spectrum, the absorption peak of Si-H, N-H, and Si-N is detected and it is shown that hydrogen is included in SiN film. From analysis of absorption band. it is calculated that density of Si-H, N-H bond is higher than $5{\times}10^{22}cm^{-3}$. LCVD MIS capacitor and PECVD MIS capacitor have injection-type hysteresis but it is known that hysteresis loss of LCVD MIS capacitor is smaller than that of PECVD MIS capacitor. It means that Interface state density of LCVD capacitor is smaller than that of PECVD capacitor. In addition, the flatband voltage($V_{FB}$) of LCVD is smaller than that of PECVD capacitor. And it means that fixed charged density($Q_{FIX}$) of LCVD capacitor is smaller than that of PECVD MIS capacitor.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.26 no.12
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• pp.1064-1071
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• 2015

In this paper, the electrical characteristics of interdigital capacitor with single-layer and multi-layer graphene were compared and analyzed in the microwave region. In equivalent circuit, a capacitor coupled with graphene showed the clear difference in electrical components such as resistance, inductance, and capacitance. In particular, for the capacitor with single-layer graphene, additional inductance and resistance occurred and the electrode resistance was also increased. Meanwhile, the self-resonance frequency of capacitor was shifted toward lower frequency region and its transmitted characteristic was considerably improved at frequency ranging from 0.4 to 4 GHz. The electrical characteristics of the capacitor with multi-layer graphene were somewhat different than the bare capacitor. In conclusion, we could confirm that single-layer graphene greatly influenced the electrical characteristics and performances of interdigital capacitor compared to multi-layer graphene.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.5
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• pp.185-190
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• 2002

Capacitor material utilized in the downsizing passive devices and dynamic random access memory(DRAM) requires the physical and electrical properties at given area such as capacitor thickness reduction, relative dielectric constant increase, low leakage current and thermal stability. Common capacitor materials, $SiO_2$, $Si_3N_4$, $SiO_2$/$Si_3N_4$,TaN and et al., used until recently have reached their physical limits in their application to several hundred angstrom scale capacitor. $Ta_2O_{5}$ is known to be a good alternative to the existing materials for the capacitor application because of its high dielectric constant (25 ~35), low leakage current and high breakdown strength. Despite the numerous investigations of $Ta_2O_{5}$ material, there have little been established the clear understanding of the annealing effect on capacitance characteristic and conduction mechanism, design and fabrication for $Ta_2O_{5}$ film capacitor. This study presents the structure-property relationship of reactive-sputtered $Ta_2O_{5}$ MIM capacitor structure processed by annealing in a vacuum. X-ray diffraction patterns skewed the existence of amorphous phase in as-deposited condition and the formation of preferentially oriented-$Ta_2O_{5}$ in 670, $700^{\circ}C$ annealing. On 670, $700^{\circ}C$ annealing under the vacuum, the leakage current decrease and the enhanced temperature-capacitance characteristic stability. and the leakage current behavior is stable irrespective of applied electric field. The results states that keeping $Ta_2O_{5}$ annealed at vacuum gives rise to improvement of electrical characteristics in the capacitor by reducing oxygen-vacancy and the broken bond between Ta and O.

• Journal of IKEEE
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• v.22 no.4
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• pp.941-947
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• 2018

In general, capacitors have a large influence on the life of the system due to frequent charging and discharging. In this paper, we analyze the cause of the core failure of high voltage, high current HVDC sub-module film capacitor and analyze the precautions of the capacitor design and manufacturing process. First, the cause of the fault, the failure mode, and the effect are analyzed through the FMEA of the capacitor. To quantitatively evaluate the causes and effects of faults that have the greatest effect on the failure of a capacitor, a fault tree for the capacitor is presented and the failure rate is analyzed according to the design parameters and the driving conditions. It is verified that the main cause of capacitor failure is the capacitance change, and it is necessary to minimize the temperature rise, corona occurrence, electrode expansion, and insulation distance decrease during capacitor design and manufacturing process in order to reduce the failure rate of the capacitor.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.62 no.4
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• pp.510-516
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• 2013

This paper suggests a 3-phase series-resonant type high voltage capacitor charger for an EML pulsed power system. The operating principle on the charger is explained by an equivalent circuit. Additionally, we analyze the charging characteristic in one discontinuous conduction mode and three continuous conduction modes. The analysis shows that the resonant current per phase is two thirds of the 3-phase charger's average charging current and one third of the single-phase charger's average charging current with the same capacity. We suggest a design method of the 3-phase capacitor charger in each operational mode and present an example of 3.5 kW capacitor charger at ${\omega}_s=0.33{\omega}_r$. The 3.5 kW 3-phase capacitor charger prototype is assembled with a TI28335 controller and a 40 kJ, 7 kV capacitor. The design rules based on the analysis are verified by experiment.

• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.4 no.3 s.8
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• pp.73-78
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• 2005

In this paper, a bandpass filter with excellent cut off characteristic due to transmission zero using bypass coupling capacitor and with superior harmonic characteristic by interdigital capacitor is suggested. The measurement results for SIR bandpass filter with bypass coupling capacitor and interdigital capacitor show that the insertion loss is less than 1.9 dB and the return loss is better than 15.4 dB with 4.2 % bandwidth at the center frequency of 5.78 GHz.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2009.10a
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• pp.411-414
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• 2009

Photo-capacitor electrodes are attracting great attention because of their high capacitance and potential applications in electronic devices. Carbon capacitor, active carbon capacitor and its combination will be fabricated using simple sandwich capacitor electrode method as carbonaceous material on each type of capacitor electrodes with 20 ${\times}$ 15 mm cell size. Carbon/active carbon cell was fabricated using sol-gel process with 120oC dry temperature in l hour and using sintering process with 500oC in 2 hour. The effect of sintering temperature on carbon properties was also investigated with X-ray diffraction technique to get the best sintering temperature. The detail of fabrication process will be explained. Elemental composition in electrode material can be measured using quantitative spectroscopic as and a cyclic voltammetric technique was used to study the combined effects of electrode material and effect of annealing temperature and also time on the capacitance of thermally treated in capacitor electrode. In this work, characterization impedance technique is used to measurement of capacitance and giving complementary results. Active carbon as carbonaceous material has a better capacitance in charge/discharge process with mean thickness $32{\mu}m$ and with particle size $1{\mu}m$ to $4.5{\mu}m$ in 20 ${\times}$ 15 mm sample size of capacitor electrode.

• Proceedings of the KIPE Conference
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• 2007.11a
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• pp.212-214
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• 2007

Regenerative energy which is generated during brake periods of DC traction might cause malfunction or destruction of rectifier or any other power conversion devices caused the increment of DC line voltage. Regenerative energy storage system using super-capacitor is one of the method to control the DC line voltage safely. And super-capacitor is very important device as energy storage device. Therefore, In this paper, we designed the regenerative energy storage system using super-capacitor and propose the method about predicting the lifetime of super-capacitor established in storage system. According to the this research, we can estimate the proper replacement moment for the existed super-capacitor due to the safety of the system. And improve the reliability of regenerative energy storage system using super-capacitor.