• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.513-514
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• 2005

In plasma processing reactors, it is common practice to control plasma density and ion bombardment energy by manipulating excitation voltage and frequency. In this paper, a dually excited capacitively coupled rf plasma reactor is self-consistently simulated with a three moment model. Effects of phase differences between primary and secondary voltage waves, simultaneously modulated at various combination of commensurate frequencies, on plasma properties are investigated. The simulation results show that plasma potential and density as well as primary self-dc bias are nearly unaffected by the phase lag between the primary and the secondary voltage waves. The results also show that, with the secondary frequency substantially lower than the primary frequency, secondary self-dc bias remains constant regardless of the phase lag. As the secondary frequency approaches to the primary frequency, however, the secondary self-dc bias becomes greatly altered by the phase lag, and so does the ion bombardment energy at the secondary electrode. These results demonstrate that ion bombardment energy can be more carefully controlled through plasma simulation.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.578-578
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• 2013

We proposed a method for synthesized nanoparticle trapping in capacitively coupled plasma (CCP) reactor. The nanoparticle in nonthermal plasma can be negatively charged by a charged particle in plasma. Thus, it can be placed between sheath and bulk plasma with zero net force on nanoparticle. However, synthesized nanoparticle can be pumped out due to the neutral drag force when the large size of sheath thickness. We try to make a potential well using the sheath for trapping the synthesized nanoparticle.

• Journal of the Semiconductor & Display Technology
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• v.4 no.2 s.11
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• pp.11-14
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• 2005

In plasma processing reactors, it is common practice to control plasma density and ion bombardment energy by manipulating excitation voltage and frequency. In this paper, a dually excited capacitively coupled rf plasma reactor is self-consistently simulated with a three moment model. Effects of phase differences between primary and secondary voltage waves, simultaneously modulated at various combinations of commensurate frequencies, on plasma properties are investigated. The simulation results show that plasma potential and density as well as primary self-dc bias are nearly unaffected by the phase lag between the primary and the secondary voltage waves. The results also show that, with the secondary frequency substantially lower than the primary frequency, secondary self·do bias remains constant regardless of the phase lag. As the secondary frequency approaches to the primary frequency, however, the secondary self-dc bias becomes greatly altered by the phase lag, and so does the ion bombardment energy at the secondary electrode. These results demonstrate that ion bombardment energy can be more carefully controlled through plasma simulation.

• ETRI Journal
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• v.29 no.5
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• pp.614-618
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• 2007

A miniaturized bandstop filter (BSF) is introduced in this paper. The filter consists of one meander spurline and a pair of capacitively loaded stubs. The meander spurline with low resonant frequency and improved slow-wave factor exhibits excellent resonant bandgap characteristics which can be modeled by a longitudinally coupled resonator. The design of the proposed microstrip BSF is presented, and its performance is measured. Measurements show that there is a stopband from 2.3 to 5.6 GHz with $S_{21}$ less than -20 dB. The total length of this BSF equals 23 mm.

• Proceedings of the IEEK Conference
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• 2002.06a
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• pp.175-178
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• 2002

In This paper, a microstrip slot antenna is designed and fabricated for wireless LAN at 5.8GHz band. The microstrip slot antenna is fed by CPW and formed the inductively slot and tile capacitively slot. To obtain wideband, the inductively slot is designed at 5.3GHz and the capacitively slot is designed at 5.8GHz. Resonant frequency of the fabricated microstrip slol antenna is 5.BCD, the bandwidth for VS%<1.5 is 29% and the gain is 4.6dB. The 3-dB beamwidth of E-plane and H-plane is 80 “ and 120 ”, respectively

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.471-471
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• 2010

대면적 디스플레이나 태양전지를 만들기 위해 식각 공정에 주로 이용되는 capacitively coupled plasma 장비의 크기에 대한 관심이 높아지고 있다. 특히, RF power를 사용함에 따라 높은 주파수로 올라갈수록 전극에 발생하는 standing wave effect로 인해 챔버 안의 전자기장의 세기가 균일하지 않고 그로 인해 plasma의 밀도 역시 균일하지 않다.[1] 이러한 plasma의 non-uniformity를 전극에 들어가는 power의 feeding 방법을 바꿔 가면서 해결해 보려고 하였다. ($0.48\;m\;{\times}\;0.48\;m$)크기의 사각전극과 50 MHz의 RF power를 사용하였다. plasma의 분포는 ion probe를 통해 살펴 보았다.

• Proceedings of the Korean Vacuum Society Conference
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• 2006.02a
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• pp.119-119
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• 2006

• Proceedings of the Korean Vacuum Society Conference
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• 2001.07a
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• pp.164-164
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• 2001

• Proceedings of the Korean Vacuum Society Conference
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• 2005.08a
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• pp.158-158
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• 2005

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.17 no.10 s.113
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• pp.929-934
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• 2006

In the paper, we suggest a simpler synthesis technique for capacitively-coupled match circuit(CCMC) which have a function of DC block and impedance matching simultaneously, and introduce a stability margin analysis technique for designing microwave amplifier under conditionally stable state. Stability margin analysis is used to determine optimum match point that ensure maximum gain under the given stability margin. It can reduce time consuming work for selecting match points in the conditionally stable state. Also, suggested miniaturization scheme of matching network is distinguished from previous work with respect to reducing deterministic parameters for CCMC synthesis. To verify utility of suggested method, 24 GHz gain block is fabricated under conditionally stable state using an internal thin-film fabrication process, Measured results show a stable gain of 10 dB and flatness of 1 dB, which is well coincident with simulated one.