• Proceedings of the Korean Society of Precision Engineering Conference
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• 2011.06a
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• pp.177-178
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• 2011

• Transactions of the Korean Society for Noise and Vibration Engineering
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• v.23 no.12
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• pp.1082-1089
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• 2013

3-Axis sensor measurement system is needed for measuring ride quality of elevator. But because 3-Axis piezoelectric accelerometer is expensive. We developed 3-Axis sensor system which is suitable for measuring ride quality of elevator using cheap MEMS sensor. There are two types of MEMS sensor that are piezoresistive and capacitive type. The excellence of piezoresistive type in characteristic of frequency response and noise is confirmed compare to capacitive type as a result of this paper's experiment and reference. 3-Axis system using MEMS sensor needs MEMS's proper frequency response characteristic. Additionally noise characteristic of sensor and circuit, stiffness of assembly are needed for deciding frequency range and accuracy of amplitude.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2014.10a
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• pp.569-572
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• 2014

This paper presents a CMOS switched-capacitor interface circuit for MEMS capacitive sensors. It consist of a capacitance to voltage converter(CVC), a second-order ${\Sigma}{\Delta}$ modulator, and a comparator. A bias circuit is also designed to supply constant bias voltages and currents. This circuit employes the correlated-double-sampling(CDS) and chopper-stabilization(CHS) techniques to reduce low-frequency noise and offset. The designed CVC has a sensitivity of 20.53mV/fF and linearity errors less than 0.036%. The duty cycle of the designed ${\Sigma}{\Delta}$ modulator output increases about 5% as the input voltage amplitude increases by 100mV. The designed interface circuit shows linearity errors less than 0.13%, and the current consumption is 0.73mA. The proposed circuit is designed in a 0.35um CMOS process with a supply voltage of 3.3V. The size of the designed chip including PADs is $1117um{\times}983um$.

• Transactions on Electrical and Electronic Materials
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• v.17 no.2
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• pp.86-91
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• 2016

Ever increasing demand for microwave operated applications has cultivated need for high-performance universal systems capable of working on multi-bands. This objective can be realized using Multi-Dielectrics in RF MEMS capacitive switch. In this study, we present a detailed analysis of the effect of various dielectrics on switch performance. The design consists of a capacitive switch and performance is analyzed by changing the dielectric layers beneath the switch. The results are obtained using three different dielectrics including Silicon nitride (7.6), Hafnium dioxide (25) and Titanium oxide (50). Testing of proposed switch yields high isolation (- 87.5 dB) and low insertion loss (- 0.1 dB at 50 GHz) which is substantially better than the conventional switches. The operating bandwidth of the proposed switch (DC to 95 GHz) makes it suitable for wide band microwave applications.

• Journal of Magnetics
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• v.18 no.2
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• pp.163-167
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• 2013

We fabricated prototype cantilevers for mechanically detected high-frequency ESR measurement. Cantilevers are fabricated from silicon-on-insulator (SOI) wafers using standard MEMS techniques such as lithography, wet etching, and plasma etching. Using commercial SOI wafers, fabrication cost and the number of processes can be substantially reduced. In this study, three types of cantilevers, designed for capacitive and optical detection, are shown. Capacitive type with lateral dimensions of $3.5{\times}1.6mm^2$ is aimed for low spin concentration sample. On the other hand, optical detection type with lateral dimensions of $50{\times}200{\mu}m^2$ is developed for high-sensitive detection of tiny samples such as newly synthesized microcrystals.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.9
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• pp.13-21
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• 2011

In this paper, the CMOS programmable interface circuit for MEMS gyroscope is presented, and evaluated with the MEMS sensing element. The circuit includes the front-end charge amplifier with 10 bit programmable capacitor arrays, 9 bit DAC for accurate offset calibration, and 10 bit PGA for accurate gain calibration. The self oscillation loop with automatic gain control operates properly. The offset error and gain error after calibration are measured to be 0.36 %FSO and 0.19 %FSO, respectively. The noise equivalent resolution and bias instability are measured to be 0.016 deg/sec and 0.012 deg/sec, respectively. The calibration capability of this circuit can reduce the variations of the output offset and gain, and this can enhance the manufacturability and can improve the yield.

• Transactions on Electrical and Electronic Materials
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• v.7 no.4
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• pp.184-188
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• 2006

This work describes efforts in the fabrication and testing of robust microelectromechanical systems (MEMS). Robustness is typically achieved by investigating non-silicon substrates and materials for MEMS fabrication. Some of the traditional MEMS fabrication techniques are applicable to robust MEMS, while other techniques are drawn from other technology areas, such as electronic packaging. The fabrication technologies appropriate for robust MEMS are illustrated through laminated polymer membrane based pressure sensor arrays. Each array uses a stainless steel substrate, a laminated polymer film as a suspended movable plate, and a fixed, surface micromachined back electrode of electroplated nickel. Over an applied pressure range from 0 to 34 kPa, the net capacitance change was approximately 0.14 pF. An important attribute of this design is that only the steel substrate and the pressure sensor inlet is exposed to the flow; i.e., the sensor is self-packaged.

• JSTS:Journal of Semiconductor Technology and Science
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• v.2 no.4
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• pp.280-287
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• 2002

We present technical issues involved in the development of actuators and sensors for applications to high-precision Micro Electro Mechanical System (MEMS). The technical issues include fabrication uncertainty and noise disturbance, causing major difficulties for MEMS to achieve high-precision actuation and detection functions. For nano-precision actuators, we solve the fabrication instability and electrical noise problems using digital actuators coupled with nonlinear mechanical modulators. For the high-precision capacitive sensors, we present a branched finger electrodes using high-amplitude anti-phase sensing signals. We also demonstrate the potential applications of the nanoactuators and nanodetectors to high-precision positioning MEMS.

• Transactions on Electrical and Electronic Materials
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• v.17 no.3
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• pp.150-154
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• 2016

Contact electrodes pose threats like inflammation, metal poisoning, and allergic reaction to the user during long term ECG procedure. Therefore, we present a novel noncontact electrocardiographic electrode designed through microelectromechanical systems (MEMS) process. The proposed ECG electrode consists of small inner and large outer circular copper plates separated by thin insulator. The inner plate enables capacitive transduction of bio-potential variations on a subject’s chest into a voltage that can be processed by a signal processing board, whereas the outer plate shields the inner plate from environmental electromagnetic noise. The electrode lead wires are also coaxially designed to prevent cables from coupling to ground or electronic devices. A prototype ECG electrode has an area of about 2.324 cm², is very flexible and does not require power to operate. The prototype ECG electrode could measure ECG at about 500 um distance from the subject’s chest.

• Journal of Computing Science and Engineering
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• v.8 no.3
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• pp.129-136
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• 2014

This paper presents the equivalent circuit modelling and eigenfrequency analysis of a wideband robust capacitive radio frequency (RF) microelectromechanical system (MEMS) switch that was designed using Poly-Si and Au layer membrane for highly reliable switching operation. The circuit characterization includes the extraction of resistance, inductance, on and off state capacitance, and Q-factor. The first six eigenfrequencies are analyzed using a finite element modeler, and the equivalent modes are demonstrated. The switch is optimized for millimeter wave frequencies, which indicate excellent RF performance with isolation of more than 55 dB and a low insertion loss of 0.1 dB in the V-band. The designed switch actuates at 13.2 V. The R, L, C and Q-factor are simulated using Y-matrix data over a frequency sweep of 20-100 GHz. The proposed switch has various applications in satellite communication networks and can also be used for devices that will incorporate the upcoming IEEE Wi-Fi 802.11ad protocol.