• 융합정보논문지
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• 제8권5호
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• pp.95-100
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• 2018

금속 산화물/그래핀 형태의 복합 나노소재는 높은 전기용량을 갖는 2차 전지의 전극용 소재 또는 고감도 가스 센서의 감지물질 등으로 활용되는 매우 유용한 기능성 소재이다. 본 논문에서는 열 화학기상증착(CVD, Chemical Vapor Deposition)으로 Cu Foil 위에 대면적으로 합성된 CVD 그래핀 및 고정렬 열분해 흑연(HOPG, Highly Oriented Pyrolytic Graphite)으로부터 기계적으로 박리된 그래핀 기판 위에 이산화바나듐($VO_2$) 나노구조물을 기상수송방법으로 직접 성장시키는 연구를 수행하였다. 연구결과 CVD 그래핀 기판의 경우, 그래핀 결정 경계에서 상대적으로 많이 존재하는 기능기들이 $VO_2$ 나노구조물에서 핵형성의 씨앗으로 작용하는 것이 확인되었다. 반면에 HOPG에서 기계적으로 박리된 그래핀 나노시트 표면에는 기능기가 균일하게 분포하기 때문에, 2차원과 3차원 형태로 $VO_2$ 나노구조물이 성장되었다. 이러한 연구결과는 고기능성 $VO_2$/그래핀 나노복합소재를 이용하여 높은 전기용량을 갖는 2차 전지 전극소재 및 고감도 가스 센서의 감지물질 합성에 유용하게 활용될 것으로 전망된다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.262-262
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• 2010

To investigate the effect of the amount of hydrogen on CVD grown-graphene, the flow rate of hydrogen was changed, while other process parameters were kept constant during CVD synthesis. Substrate which consists of 300nm-nickel/$SiO_2$/Si substrate, and methane gas mixed with hydrogen and argon were used for CVD growth. Graphene was synthesized at $950^{\circ}C$. The thickness and the defect of graphene were analyzed using raman spectroscopy. The synthesized graphene shows non-uniform and more defective below a certain amount of hydrogen.

• 한국세라믹학회지
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• 제56권5호
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• pp.506-512
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• 2019

Although graphene has been successfully grown in large scale via chemical vapor deposition (CVD), it is still questionable whether the mechanical properties of CVD graphene are equivalent to those of exfoliated graphene. In addition, there has been an issue regarding how the tilt angle of the grain boundary (GB) affects the strength of graphene. We investigate the mechanical properties of CVD graphene with nanoindentation from atomic force microscopy and transmission electron microscopy. Surprisingly, the samples with GB angles of 10° and 26° yielded similar fracture stresses of ~ 80 and ~ 79 GPa, respectively. Even for samples with GB exhibiting a wider range, from 0° to 30°, only a slightly wider fracture stress range (~ 50 to ~ 90 GPa) was measured, regardless of tilt angle. The results are contrary to previous studies that have reported that GBs with a larger tilt angle yield stronger graphene film. Such a lack of angle dependence of GB can be attributed to irregular and well-stitched GB structures.

• Composites Research
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• 제36권5호
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• pp.342-348
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• 2023

최근 웨어러블 소자를 이용한 신체와 주변 온도의 실시간 모니터링에 대한 수요가 급격히 증가하고 있다. 그래핀 기반 써미스터가 고성능 유연 온도 센서로 개발되어 왔다. 본 연구에서는 단일층 그래핀의 온도 측정 성능을 개선하기 위하여 표면에 polyethylenimine(PEI)를 코팅하여 저항 온도 계수(TCR)를 조절하였다. 화학기상증착법(CVD)에 의해 합성한 단일층 그래핀은 습식 전사 공정을 통해 원하는 기판에 전사되었다. PEI에 의한 계면 도핑을 유도하기 위하여, 소수성의 그래핀 표면을 산소 플라즈마 처리를 통해 결함을 최소화하면서 친수성으로 제어하였다. PEI 도핑 효과를 전계효과트랜지스터(FET)를 이용하여 확인하였다. PEI 도핑에 의해서 CVD 그래핀의 TCR 값이 30~50℃의 온도 범위에서 -0.49(±0.03)%/K로 향상된 것을 확인하였다.

• Composites Research
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• 제36권5호
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• pp.377-382
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• 2023

그래핀 기반 소자의 성능을 개선하기 위해서는 그래핀과 기판 사이의 계면 상호 작용을 이해하는 것이 중요하다. 본 연구에서는 유전체 기판에 놓인 단일층 그래핀의 접착에너지를 모드 I 시험을 통해 측정하였다. 메탄과 수소 가스 분위기에서 화학기상증착법(CVD)을 통해 구리 포일 위에 대면적 단일층 그래핀을 합성하였다. 합성한 그래핀을 폴리머를 이용한 습식 전사 공정을 통해 유전체 기판 위에 전사하였다. 이중외팔보 형상을 이용한 모드 I 시험을 통해 기판 위에 올려진 그래핀을 기계적으로 박리하였다. 이 때, 얻어지는 힘-변위 곡선을 분석하여 접착에너지를 평가하였는데, 산화실리콘 기판에 대해서는 1.13 ± 0.12 J/m², 질화실리콘 기판에 대해서는 2.90 ± 0.08 J/m²의 접착에너지를 나타냈다. 본 연구를 통해 유전체 기판 위에 올려진 CVD 그래핀의 계면 상호 작용력에 대해 정량적인 측정을 진행하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.248-248
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• 2012

Synthesis graphene on Cu substrate by plasma-enhanced chemical vapor deposition (PE-CVD) is investigated and its quality's affection factors are discussed in this work. Compared with the graphene synthesized at high temperature in chemical vapor deposition (CVD), the low-temperature graphene film by PE-CVD has relatively low quality with many defects. However, the advantage of low-temperature is also obvious that low melting point materials will be available to synthesize graphene as substrate. In this study, the temperature will be kept constant in $400^{\circ}C$ and the graphene was grown in plasma environment with changing the plasma power, the flow rate of precursors, and the distance between plasma generator coil and substrates. Then, we investigate the effect of temperature and the influence of process variables to graphene film's quality and characterize the film properties with Raman spectroscopy and sheet resistance and optical emission spectroscopy.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.659-659
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• 2013

Recently, graphene has been intensively studied due to the fascinating physical, chemical and electrical properties. It shows high carrier mobility, high current density, and high thermal conductivity compare with conventional semiconductor materials even it has single atomic thickness. Especially, since graphene has fantastic electrical properties many researchers are believed that graphene will be replacing Si based technology. In order to realize it, we need to prepare the large and uniform graphene. Chemical vapor deposition (CVD) method is the most promising technique for synthesizing large and uniform graphene. Unfortunately, CVD method requires transfer process from metal catalyst. In transfer process, supporting polymer film (Such as poly (methyl methacrylate)) is widely used for protecting graphene. After transfer process, polymer layer is removed by organic solvents. However, it is impossible to remove it completely. These organic residues on graphene surface induce quality degradation of graphene since it disturbs movement of electrons. Thus, in order to get an intrinsic property of graphene completely remove of the organic residues is the most important. Here, we introduce modified wet graphene transfer method without PMMA. First of all, we grow the graphene from Cu foil using CVD method. And then, we deposited several metal films on graphene for transfer layer instead of PMMA. Finally, we fabricate graphene FET devices. Our approaches show low defect density and non-organic residues in comparison with PMMA coated graphene through Raman spectroscopy, SEM and AFM. In addition, clean graphene FET shows intrinsic electrical characteristic and high carrier mobility.

• 센서학회지
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• 제25권4호
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• pp.275-279
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• 2016

Chemical vapor deposited (CVD) polycrystalline graphene is widely used for various sensor application because of its extremely large surface-to-volume ratio. The electrical properties of CVD-graphene is significantly affected by the grain size and boundaries (GGBs), but evaluation of GGB of continuous monolayer graphene is difficult. Although several evaluation methods such as tunneling electron microscopy, confocal Raman, UV/ozone-oxidation are typically used, they still have issues in evaluation efficiency and accuracy. In this paper, we suggest an improved evaluation method for precise and simple GGB evaluation which is based on UV/ozone-oxidation and chemical etching process. Using this method, we could observe clear GGBs of CVD-graphene layers grown by different process conditions and statistically evaluate average grain sizes varying from $1.69{\sim}4.43{\mu}m$. This evaluation method can be used for analyzing the correlation between the electrical properties and grain size of CVD-graphene, which is essential for the development of graphene-based sensor devices.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 추계학술발표대회
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• pp.16.2-16.2
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• 2011

Graphene has attracted significant attention due to its unique characteristics and promising nanoelectronic device applications. For practical device applications, it is essential to synthesize high-quality and large-area graphene films. Graphene has been synthesized by eloborated mechanical exfoliation of highly oriented pyrolytic graphite, chemical reduction of exfoliated grahene oxide, thermal decomposition of silicon carbide, and chemical vapor deposition (CVD) on metal substrates such as Ni, Cu, Ru etc. The CVD has advantages over some of other methods in terms of mass production on large-areas substrates and it can be easily separated from the metal substrate and transferred to other desired substrates. Especially, plasma-enhanced CVD (PECVD) can be very efficient to synthesize high-quality graphene. Little information is available on the synthesis of graphene by PECVD even though PECVD has been demonstrated to be successful in synthesizing various carbon nanostructures such as carbon nanotubes and nanosheets. In this study, we synthesized graphene on $Ni/SiO_2/Si$ and Cu plate substrates with CH4 diluted in $Ar/H_2$ (10%) by using an inductively-coupled PECVD (ICPCVD). High-quality graphene was synthesized at as low as $700^{\circ}C$ with 600 W of plasma power while graphene layer was not formed without plasma. The growth rate of graphene was so fast that graphene films fully covered on substrate surface just for few seconds $CH_4$ gas supply. The transferred graphene films on glass substrates has a transmittance at 550 nm is higher 94%, indicating 1~3 monolayers of graphene were formed. FETs based on the grapheme films transferred to $Si/SiO_2$ substrates revealed a p-type. We will further discuss the synthesis of graphene and doped graphene by ICPVCD and their characteristics.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.490-490
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• 2011

Graphene, hexagonal network of carbon atoms forming a one-atom thick planar sheet, has been emerged as a fascinating material for future nanoelectronics. Huge attention has been captured by its extraordinary electronic properties, such as bipolar conductance, half integer quantum Hall effect at room temperature, ballistic transport over ${\sim}0.4{\mu}m$ length and extremely high carrier mobility at room temperature. Several approaches have been developed to produce graphene, such as micromechanical cleavage of highly ordered pyrolytic graphite using adhesive tape, chemical reduction of exfoliated graphite oxide, epitaxial growth of graphene on SiC and single crystalline metal substrate, and chemical vapor deposition (CVD) synthesis. In particular, direct synthesis of graphene using metal catalytic substrate in CVD process provides a new way to large-scale production of graphene film for realization of graphene-based electronics. In this method, metal catalytic substrates including Ni and Cu have been used for CVD synthesis of graphene. There are two proposed mechanism of graphene synthesis: carbon diffusion and precipitation for graphene synthesized on Ni, and surface adsorption for graphene synthesized on Cu, namely, self-limiting growth mechanism, which can be divided by difference of carbon solubility of the metals. Here we present that large area, uniform, and layer controllable graphene synthesized on Cu catalytic substrate is achieved by acetylene-assisted CVD. The number of graphene layer can be simply controlled by adjusting acetylene injection time, verified by Raman spectroscopy. Structural features and full details of mechanism for the growth of layer controllable graphene on Cu were systematically explored by transmission electron microscopy, atomic force microscopy, and secondary ion mass spectroscopy.