• Journal of the Korean Crystal Growth and Crystal Technology
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• v.30 no.1
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• pp.21-26
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• 2020

This article reports the result on the spectroscopic analysis of the three Lightbox CVD-grown diamonds. Lightbox Jewelry, a De Beers company, has begun selling CVD laboratory-grown diamonds since September 2018. Recently, we had the opportunity to examine three Lightbox's pendant necklaces. The 0.25 ct, 0.25 ct, and 0.26 ct round brilliant were graded as "H" near colorless, Fancy Vivid orangy pink, and Fancy Vivid blue with cut grades of excellent, respectively. The laser-inscribed Lightbox logo under the table, large enough to be easily visible with a microscope. Based on the spectroscopic techniques, for near colorless sample was not subjected to post-growth HPHT processing to improve its color. For pink sample, optical centers at H3, 3H, 594 nm, NV, and GR1 were recorded. It was speculated that the pink sample have been received irradiation and annealing. In addition, the blue CVD synthetic sample was concluded to be irradiated without annealing.

• Korean Chemical Engineering Research
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• v.49 no.4
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• pp.405-410
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• 2011

A study on chemical vapor deposition(CVD) of $WO_3$ and the electrochromic properties of the CVD $WO_3$ films have been carried out. The crystalinity, purity, and growth rate of the films depending on substrate temperatures are investigated. The highest growth rate is $8{\mu}m/min$ at the substrate temperatures above $300^{\circ}C$ and the estimated activation energy for overall film growth is about 45.9 kJ/mol at the temperatures of $225{\sim}275^{\circ}C$, where the CVD process is controlled by a surface reaction kinetics. The films grown below $275^{\circ}C$ are amorphous, while those deposited above $300^{\circ}C$ are crystalline. The effects of thickness and deposition temperature of the $WO_3$ films on electrochromic activity are also investigated. The coloration efficiency of the films increases with increase in film thickness and decrease in deposition temperature.

• Journal of the Korean Ceramic Society
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• v.35 no.11
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• pp.1233-1239
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• 1998

Gas phase compositions of the hot filament-assisted diamond CVD reaction were analyzed by on-line quadrupole mass analysis(QMA) technique. D2 isotope experiments showed that methance molecules were decomposed into atomic state and then recombined in to acetylene during transport the probe line. Although acetylene or ethylene was supplied instead of methane similar gas compositions were obtained when filament temperature was above 1500$^{\circ}C$ Therefore this system could be assumed near thermal equilibrium state. Filament temperature and reaction pressure variation experiments exhibited the same tendency between acetylene concentration and diamond growth rate and these results implied that acetylene molecule played the role of the reactive species in the diamond CVD reaction.

• Proceedings of the Materials Research Society of Korea Conference
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• 2007.11a
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• pp.108.1-108.1
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• 2007

• Bulletin of the Korean Chemical Society
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• v.25 no.5
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• pp.617-619
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• 2004

As an pretreatment, a Fe$(NO_3)_3{\cdot}9H_2O-Al(OH)_3$mixture was ground by a high energy mill and used as a supported catalyst for the growth of carbon nanotubes by a thermal CVD. The crystal structure of the catalyst disordered by the grinding influenced significantly the synthesis of carbon nanotubes in a thermal CVD.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.421-421
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• 2012

Graphene has drawn enormous attention owing to its outstanding properties, such as high charge mobility, excellent transparence and mechanical property. Synthesis of Graphene by chemical vapor deposition (CVD) is an attractive way to produce large-scale Graphene on various substrates. However the fatal limitation of CVD process is high temperature requirement(around $1,000^{\circ}C$), at which many substrates such as Al substrate cannot endure. Therefore, we propose plasma enhanced CVD (PECVD) and decrease the temperature to $400^{\circ}C$. Fig. 1 shows the typical structure of RF-PECVD instrument. The quality of Graphene is affected by several variables. Such as plasma power, distance between substrate and electronic coil, flow rate of source gas and growth time. In this study, we investigate the influence of these factors on Graphene synthesis in vacuum condition. And the results were checked by Raman spectra and conductivity measurement.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.760-763
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• 2007

The properties of carbon nanotube obtained by thermal chemical vapor deposition (CVD) process were investigated as a function of ammonia $(NH_3)$ gas in hydrocarbon gas, Fe catalyst thickness, and growth temperature. Fe catalyst was prepared by DC magnetron sputter and pre-treated with ammonia gas. CNTs were then grown with ammonia-acetylene gas mixture by thermal CVD. The diameter of these CNTs shows a strong correlation with the gas rate, the catalyst film thickness and temperature. From our results, it was found that the factors of grown CNTs positively acted to improve CNT quality.

• Journal of the Korean institute of surface engineering
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• v.29 no.5
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• pp.487-493
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• 1996

Diamond films were grown at lower temperatures (630-813K) on Si, Al (1100P), and Al-Si(8A, 8B, BC) alloy substrates using improved microwave plasma CVD apparatus in a mixed methane and hydrogen plasma. Improved microwave plasma CVD apparatus equipped water cooled substrate holder and the substrates were set up lower position than bottom line of the applicator waveguide. When the methane concentration was high and growth was conducted at lower pressures the diamond films were synthesized. Moreover the deposits on the scratched substrates formed flat surfaces consisting of fine grains. XRD results, the deposits were identified to cubic diamond. An analysis using Raman spectroscopy, further confirmed that diamond films deposited on the Si substrates were high quality. The deposits on the Al substrates, in contrast, contained amorphous carbon. While the quality of the deposits on the Al-Si substrates were differed with the substrate alloys.

• Journal of the Korean Society for Heat Treatment
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• v.34 no.2
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• pp.75-80
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• 2021

The crystal grains of polycrystalline diamond vary depending on deposition conditions and growth thickness. The diamond thin film deposited by the CVD method has a very rough growth surface. On average, the surface roughness of a diamond thin film deposited by CVD is in the range of 1-100 um. However, the high surface roughness of diamond is unsuitable for application in industrial applications, so the surface roughness must be lowered. As the surface roughness decreases, the scattering of incident light is reduced, the heat conduction is improved, the mechanical surface friction coefficient can be lowered, and the transmittance can also be improved. In addition, diamond-coated cutting tools have the advantage of enabling ultra-precise machining. In this study, the surface roughness of diamond was improved by thermal diffusion reaction between diamond carbon atoms and ferrous metals at high temperature for diamond thin films deposited by MPCVD.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.652-652
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• 2013

The conventional thermal chemical vapor deposition (CVD) setup for the graphene synthesis has mainly used convective heat transfer in order to heat a catalyst (e.g. Cu) up to $1,000^{\circ}C$. Although the conventional CVD has been so far widely accepted as the most appropriate candidate enabling mass-production of high-quality graphene, this method has stillremained under the standard for the commercialization largely due to the poor productivity arisen out of the required long processing time. Here, we introduced a fast and efficient synthetic route toward CVD-graphene. Unlike the conventional CVD using convection heat transfer, we adopted a CVD setup utilizing conduction heat transfer between Cu catalyst and rapid heating source. The high thermal conductive nature of Cu and the employed rapid heating source led to the remarkable reduction in processing timeas compared to the conventional convection based CVD (Fig. 1A), moreover, the synthesized graphene was turned out to have comparable quality to that synthesized by the conventional CVD (Fig. 1B). For the optimization of the conduction based CVD process, the parametric studies were thoroughly performed using through Raman spectroscopy and electrical sheet resistance measurement. Our approach is thought to be worth considerable in order to enhance productivity of the CVD graphene in the industry.