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http://dx.doi.org/10.9713/kcer.2011.49.4.405

Preparation of $WO_3$ Films by CVD and their Application in Electrochromic Devices  

Jung, Hun (Department of Chemical Engineering and The research Institute of Catalysis)
SunWoo, Changshin (School of Bioscience and Technology, Chonnam National University)
Kim, Do-Heyoung (Department of Chemical Engineering and The research Institute of Catalysis)
Publication Information
Korean Chemical Engineering Research / v.49, no.4, 2011 , pp. 405-410 More about this Journal
Abstract
A study on chemical vapor deposition(CVD) of $WO_3$ and the electrochromic properties of the CVD $WO_3$ films have been carried out. The crystalinity, purity, and growth rate of the films depending on substrate temperatures are investigated. The highest growth rate is $8{\mu}m/min$ at the substrate temperatures above $300^{\circ}C$ and the estimated activation energy for overall film growth is about 45.9 kJ/mol at the temperatures of $225{\sim}275^{\circ}C$, where the CVD process is controlled by a surface reaction kinetics. The films grown below $275^{\circ}C$ are amorphous, while those deposited above $300^{\circ}C$ are crystalline. The effects of thickness and deposition temperature of the $WO_3$ films on electrochromic activity are also investigated. The coloration efficiency of the films increases with increase in film thickness and decrease in deposition temperature.
Keywords
$WO_3$; CVD; Electrochromic Device; Tungsten Hexacarbonyl;
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